铬锰复合掺杂对氧化铝陶瓷真空耐压性能的影响

在掺有0.5wt; Cr2O3的95;氧化铝瓷基础上掺入0～1.5wt;的MnO2,研究了铬锰复合掺杂即MnO2掺入量对氧化铝陶瓷物相、显微结构、烧结性能、电阻率、介电常数和真空耐压性能的影响.结果表明,MnO2掺杂通过固溶进Al2O3晶格,促进了95;氧化铝陶瓷的烧结和晶粒生长,提高了显微结构的均匀性和致密性.随着MnO2掺入量的增加,材料的电阻率明显下降,介电常数略微减小.铬锰复合掺杂对氧化铝陶瓷真空耐压性能的影响与MnO2的掺入量密切相关.在掺0.5wt; Cr2O3的情况下,当MnO2掺入量为1～1.5wt;时,材料的闪络电压高于未掺杂MnO2的样品,掺1.5wt; MnO2样品的闪络电压最高,达54 kV/cm.     

B2O3掺杂对0.69CaTiO3-0.31LaAlO3微波介质陶瓷的性能影响

采用固相反应法,研究了B2O3对0.69CaTiO3-0.31LaAlO3微波介质陶瓷烧结性能与介电性能的影响.通过X射线衍射分析表明,B2O3的引入未改变陶瓷的晶相组成.添加适量B2O3的可有效的降低0.69CaTiO3-0.31LaAlO3介电陶瓷的烧结温度,增强致密性并提高介电性能.在1500℃烧结温度,B2O3掺杂量为0.3wt;时,0.69CaTiO3-0.31LaAlO3陶瓷获得最佳介电性能:εr≈45.4,Qf≈52800 GHz,τf≈8.78 ppm/℃.     

B2O3对YCaZrVIG铁氧体微结构及性能的影响

采用传统固相法制备添加B2O3的YCaZrVIG铁氧体,研究了B2O3添加量对其烧结温度、微结构和磁性能的影响。结果表明,添加的B2O3对材料的物相没有影响,所有样品均为单相石榴石结构。添加B2O3显著降低了YCaZrVIG铁氧体的烧结温度,且使颗粒尺寸逐渐减小。添加1.8wt%B2O3的样品,烧结温度约为1200℃,且体积密度最大。进一步提高B2O3添加量至3.0wt%,烧结温度又略有提高,且晶粒尺寸变得不均匀。随着B2O3添加量的增加,4πMs和Br先显著增大后减小,而Hc则减小后急剧增大。适当提高烧结温度,有利于Hc的减小。B2O3添加量为1.8wt%、1290℃烧结保温4 h制得的YCaZrVIG铁氧体综合性能较佳:Db=4.80 g.cm-3,4πMs=1670 Gs,Br=682 Gs,Hc=0.86 Oe。     

Sr掺杂对Ca3Co4O9基材料热电性能的影响

采用溶胶-凝胶法,结合常压烧结工艺制备了Ca3-xSrxCo4O9(x=0～0.5)热电陶瓷材料,并对材料的热电性能进行了测试。结果表明,Sr掺杂对Ca3Co4O9基材料的热电性能有较大影响。随着掺杂量的增加,电导率逐渐增大,Seebeck系数略有减小。Sr掺杂能显著降低热导率,而且随着掺杂量的增加,热导率的下降幅度逐渐增大。Sr掺杂显著改善Ca3Co4O9材料的热电性能,当掺杂量为0.5时获得最佳热电性能,573 K时Z值达1.07×10-4 K-1。     

铬掺杂对氧化铝陶瓷真空电绝缘性能的影响

陶瓷绝缘子沿面闪络现象是制约电真空器件使用的重要原因.以95;的Al2O3陶瓷为基料,掺杂0～1.5wt; Cr2O3,制备铬掺杂的氧化铝陶瓷绝缘子,研究了铬的掺杂含量对该绝缘材料烧结性能和真空绝缘性能的影响.结果表明:Cr3+掺杂显著降低了95;氧化铝陶瓷的气孔率,促进了陶瓷的烧结,并降低了陶瓷的烧结温度,使铬掺杂氧化铝陶瓷的晶粒更加细小均匀.掺杂量为0.5wt;的Cr2O3真空沿面闪络电压最高,达到65 kV/cm,主要原因是铬的掺杂降低了样品的气孔率和二次电子发射系数,过量掺杂造成了更多的晶体结构缺陷,反而降低了陶瓷绝缘子的真空耐电压.     

B2O3对6ST-4LA微波介质陶瓷结构与性能的影响

为降低0.6SrTiO3-0.4LaAlO3(简称6ST-4LA)微波介质陶瓷的烧结温度,采用固相反应法,研究了B2O3对其结构与性能的影响.结果表明:添加B2O3可有效地降低6ST-4LA陶瓷的烧结温度,由1550℃降至1450℃;主晶相仍为赝立方钙钛矿结构固溶体,但有第二相的出现,其含量随着B2O3添加量的增加先降低后升高.当B2O3添加量为0.50wt;在1450℃下烧结时,6ST-4LA陶瓷获得最佳微波介电性能:εr=44.46,Q·f=51127 GHz,τf=-2.3×106/℃.     

掺杂量对ZnO陶瓷靶材性能影响的研究

以ZnO、Al2O3粉体为原料,采用常压烧结方法制备高导电性ZnO: Al陶瓷靶材,并系统研究了Al掺杂量对该靶材的晶体结构、微观形貌以及电学特性的影响.结果表明:Al2O3掺杂量是影响ZnO陶瓷靶材导电性的重要因素之一.随Al: Zn原子比从0: 100变化至8.0: 100,电阻率呈现先递减后递增的规律.当Al: Zn原子比为4.0: 100时,所制备的ZnO陶瓷靶材电阻率最低,为4.1×10-3 Ω·cm;当Al掺杂量超过某一数值后,将导致锌铝尖晶石相(ZnAl2O4)的生成,从而使材料的电阻率升高.为了获得高导电性能的ZnO靶材,必须精确控制Al的掺入量,以防止锌铝尖晶石的生成.     

MnO2掺杂对BiFeO3-PbTiO3-Bi(Zn1/2Ti1/2)O3-PbZrO3陶瓷组织与性能的影响

采用固相烧结法制备MnO2掺杂的BiFeO3-PbTiO3-Bi(Zn1/2Ti1/2)O3-PbZrO3 (BF-PT-BZT-PZ)压电陶瓷,研究了不同MnO2掺杂量对材料结构及压电介电性能的影响.实验结果表明,适量的MnO2掺杂,不仅能使晶粒长大,提高晶界强度,而且可以改善材料的介电压电性能.当MnO2掺杂量为0.1 mol;时,880℃(5 h)烧结的陶瓷样品性能参数为:d33 =97 pC/N,kp=0.29,kI=0.37,εr=390,tanδ ～0.02.     

类钙钛矿Pr1.3Sr0.7Ni0.7-xCu0.3FexO4+δ材料的制备与传导性能研究

以硝酸盐和氧化物为原料,通过甘氨酸-硝酸盐法(GNP)合成出Pr1.3Sr07Ni0.7-xCu0.3FexO4+δ(x=0,0.025,0.05,0.1) (PSNCF)粉体,经压制成形、烧结后得到烧结体样品.采用X射线衍射仪对煅烧后粉体的物相进行分析,利用扫描电子显微镜和能谱仪对样品的微观组织和元素分布进行了表征,采用四端子法和阻塞电极法测量了不同Fe掺杂量烧结体样品的电导率,并对材料的透氧性能进行了测试.实验结果表明,前驱体粉末在1000℃煅烧5h后得到具有四方相的PSNCF粉体.烧结体试样在300 ～ 950℃间的总电导率均在200 S·cm-1以上,且随Fe掺杂含量的增加有所下降;其中,Pr1.3 Sr0.7 Ni0.65 Cu0.3 Fe0.05 O4+δ样品的氧离子电导率在950℃时最大达到0.194 S ·cm-1.另外,随Fe掺杂量增加,PSNCF材料的透氧率增大,950℃下,Fe掺杂量为0.05时(厚1 mm,40;O2-60;N2),透氧率达0.034 mL·cm-2·min-1,为未掺杂样品的3倍.     

溶胶-凝胶法制备Al2O3粉体及其陶瓷的性能研究

以硝酸铝、柠檬酸为原料,采用溶胶-凝胶法制备Al2O3粉体.利用X射线衍射仪、扫描电子显微镜对Al2O3粉体的晶体结构、形貌及粒径进行表征,并研究以MgO-CuO-TiO2作为添加剂时,Al2O3陶瓷的烧结特性及介电性能.结果表明:干凝胶经1000℃煅烧2h后得到了分散性良好的Al2O3粉体,粒径大约为50～ 80 nm.随着MgO掺杂量的增加,Al2O3陶瓷的相对密度、介电常数以及Q·f值都呈先增大后减小的趋势;随着温度的升高,烧结体的相对密度不断增大.当烧结温度为1500℃,MgO含量为0.5wt;时,Al2O3陶瓷的综合性能较好:相对密度为91.52;,介电常数和Q·f值达到最大值分别为9.46,19862 GHz.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.     

A SAXS study of kinetics of aggregation of silica sols

SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.