添加碳对ZrB2-SiC陶瓷的低温致密化和力学性能影响

以纳米ZrB2粉体为原材料,采用热压烧结的方法制备了ZrB2-SiC超高温陶瓷,研究了碳含量对ZrB2-SiC陶瓷致密度、微结构和力学性能的影响.结果表明:纳米粉体显著降低了ZrB2-SiC陶瓷的烧结温度,在1500℃即可获得95.1;的致密度,在1800℃实现了超高温陶瓷的致密化烧结;添加碳能够进一步促进ZrB2-SiC陶瓷的低温致密化,同时抑制晶粒长大.当碳的含量为1.0wt;时,材料表现出最佳的烧结性能,在1700℃热压烧结的ZrB2-SiC陶瓷致密度达到99;以上,而且烧结后的材料表现出优异的力学性能.     

ZrB2-SiC-Csf超高温陶瓷复合材料碳纤维损伤抑制研究

采用放电等离子烧结和热压烧结制备了短切碳纤维(Csf)增韧ZrB2-SiC超高温陶瓷复合材料(ZrB2-SiC-Csf),研究了制备工艺对ZrB2-SiC-Csf复合材料微结构演变、力学性能和抗热冲击性能的影响.结果表明:烧结温度是导致碳纤维结构损伤的主要因素,降低烧结温度能有效抑制碳纤维的结构损伤.采用纳米ZrB2粉体在1450 ℃低温热压烧结制备的ZrB2-SiC-Csf复合材料在断裂过程中表现出纤维拔出、纤维侨联和裂纹偏转增韧机制,其临界热冲击温差高达741 ℃,表现出良好的力学性能和优异的抗热冲击性能.从热力学的角度阐明了ZrB2-SiC-Csf复合材料中碳纤维结构损伤的机理,并揭示了该类材料的烧结温度应低于1500 ℃.     

粉体粒径及烧结工艺对ZrB2陶瓷致密化行为与晶粒长大的影响

利用热压烧结(HP)和放电等离子烧结(SPS)制备了ZrB2陶瓷,研究了粉体粒径和烧结工艺对ZrB2陶瓷致密化行为和晶粒长大的影响.结果表明,相同工艺下以平均粒径为200 nm的ZrB2粉体为原料替代平均粒径为2μm的ZrB2粉体可以明显促进粉体的致密化烧结,采用SPS替代HP工艺可以显著降低粉体的致密化温度,采用平均粒径为200 nm的ZrB2粉体在1900℃进行SPS工艺烧结即可实现ZrB2陶瓷的致密化烧结.     

以MH2(M=Ti,Zr)为原料反应烧结制备MB2-SiC复相陶瓷

分别以TiH2,ZrH2为原料,结合原位反应与脉冲电流辅助烧结制备了TiB2-SiC及ZrB2-SiC复相陶瓷.研究发现,所制备的复相陶瓷表现出一定的织构化现象,TiB2及ZrB2晶粒在反应烧结过程中其(001)面沿垂直压力和电流方向生长.金属氢化物粉体的粒径大小对复相陶瓷的致密化及微结构有较大影响:粒径越小越有利于陶瓷的致密化和硼化物晶粒的定向生长.由于金属硼化物的定向,复相陶瓷的机械性能表现出各向异性.TiB2-SiC复相陶瓷具有较高的断裂韧性,最高可达7.3 MPa·m1/2,而ZrB2-SiC复相陶瓷具有更高的抗弯强度(937 MPa).     

反应热压烧结制备SiC/ZrB2复相陶瓷及其性能表征

以二硼化锆、硅和活性碳为原材料,在1850℃、20 MPa条件下,采用反应热压烧结工艺制备出了SiC/ZrB2陶瓷基复合材料.研究了添加剂(硅和活性碳)含量对ZrB2陶瓷烧结行为和力学性能的影响.借助X射线衍射和扫描电镜分析了复合材料的物相组成和微观结构.研究结果表明:添加剂可以显著提高复合材料的烧结致密度和力学性能.复合材料的XRD衍射图谱中只有ZrB2和SiC的衍射峰.当添加剂含量为12wt;时,复合材料的弯曲强度和断裂韧性分别达到584MPa和7.25MPa ·m1/2.显微结构分析表明,致密度的提高、晶粒粒径的减小以及断裂模式的转变是复合材料力学性能提高的主要原因.     

不同粒度SiC颗粒低温制备SiC泡沫陶瓷的性能

以SiC陶瓷前驱体聚碳硅烷(polycarbosilane,PCS)为粘结剂、SiC微粉为填料、聚氨酯海绵为模板,低温制备出了SiC泡沫陶瓷.研究了SiC颗粒粒度和PCS含量对SiC泡沫陶瓷线收缩率、体积密度、微观结构与抗弯强度的影响.确定了不同粒度SiC颗粒制备泡沫陶瓷的最佳烧成温度.结果表明,随SiC颗粒粒度与PCS含量的增加泡沫陶瓷的线收缩率增大、体积密度降低;泡沫陶瓷的抗弯强度随SiC颗粒粒度的增大而降低;颗粒粒度小于1μm时,最佳烧成温度为1200℃,颗粒粒度大于1μm时,最佳烧成温度为1100℃;PCS在1100℃与1200℃热解可得到β-SiC晶粒,其晶粒尺寸为12.2 nm与19.6 nm.     

固溶TaB2对HfB2-SiC陶瓷材料的组织结构与力学性能的影响

以HfO2、Ta2O5和B为原料,通过硼热还原法原位固溶TaB2制备出HfB2粉体,然后加入20vol;SiC,通过放电等离子烧结(SPS)制备HfB2-SiC复相陶瓷,探究固溶TaB2对陶瓷显微结构和力学性能的影响.结果表明,随着固溶TaB2含量的增加,合成HfB2粉体的粒径显著降低,HfB2-TaB2固溶体的晶格常数减小.在SPS烧结下,固溶不同含量TaB2的HfB2-SiC陶瓷粉均实现全致密,但随着固溶TaB2含量的增加,HfB2-SiC陶瓷材料的硬度和韧性略有降低.     

基于多元晶粒生长抑制效应的Al2O3-TiC复相陶瓷的制备与性能研究

基于多元晶粒生长抑制效应,利用热压烧结方法制备了细晶高致密的Al2O3-TiC复相陶瓷.研究发现,仅利用第二相TiC的晶界钉扎效应,即使其含量高达30wt;,也不能有效地抑制Al2O3基体的晶粒生长.在TiC作为第二相的基础上,引入微量MgO和Y2O3,通过TiC晶界钉扎、MgO溶质滞阻和Y2O3晶界偏析等多元晶粒生长抑制作用,Al2O3基体晶粒尺寸从5.12 μm显著减小到1.82 μm,Al2O3-TiC复相陶瓷的断裂韧性从3.99±0.18 MPa·m1/2提高到5.24±0.22 MPa·m1/2.研究结果表明:利用多元晶粒生长抑制效应的协同作用,可显著细化Al2O3基复相陶瓷的显微结构,改善其力学性能.     

ZrC薄膜对Nb与ZrB2-SiC相互作用的影响

以ZrB2、SiC粉体为原料,通过等离子活化烧结在1800℃,30 MPa,保温时间5 min条件下制得出组织结构均匀致密度的ZrB2-SiC陶瓷块体;采用磁控溅射在Nb箔表面镀微米级别的ZrC薄膜.然后将Nb箔与ZrB2-SiC叠层进行烧结.利用XRD检测了产物物相,采用SEM和能谱分析观测了断口显微结构和元素分布.结果表明,当Nb箔表面无ZrC薄膜或薄膜被破坏后,产物中基本不存在单质Nb.当Nb箔表面保持有完整ZrC薄膜时,Nb金属相可以大量保留下来.当烧结温度低于1500℃时,ZrC薄膜可以有效阻止铌箔的与ZrB2、SiC的反应.镀有ZrC薄膜的Nb箔做中间层与ZrB2/SiC叠层材料的断裂韧性有明显提高,断裂韧性达到了9.66 MPa·m1/2.     

Y2O3添加对Yb2Si2O7无压烧结致密化的影响

以Yb2O3粉末和溶胶-凝胶法制备的活性SiO2凝胶为原料,在1550℃保温4h合成了具有单斜结构的单相Yb2Si2O7粉体.采用无压烧结方法获得了Yb2Si2O7陶瓷.通过添加Y2O3烧结助剂,获得了气孔率为3.2;的致密Yb2Si2O7陶瓷.采用XRD、SEM方法对烧结体的结构、成分和形貌进行测试与表征.结果表明:烧结体均为单相的Yb2Si2O7,不含其它杂质相.Y2O3的添加大大降低了烧结体的气孔率,促进了烧结的致密化.所得致密Yb2Si2O7陶瓷的平均晶粒尺寸为1～2 μm,大部分晶粒为颗粒状晶粒.     

Modelling of mechanism of agglomeration of KCl crystallization

The article presents an analysis into agglomeration during KCl vacuum crystallization. The theoretical and experimental investigations into the mechanism of agglomeration during mass crystallization result in an extension of the growth phenomena within the known model equations. The basis for this is essentially constituted by the collision model concepts of the theory of floculation in disperse systems. The parameters derived from the microprocess analysis (energy dissipation, content of solids, growth rate of individual grains) lead to model equations which are confirmed by laboratory and test trials.     

Relationship of Morphological Types of Dynamic Forms of Crystals

Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Development of Pauling's concepts of geometric characteristics of atoms

The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.     

Dependence of the parameters of equations of viscous flow on chemical composition of silicate melts

The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts x_i of all oxides dissolved in SiO₂, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature T_r , at which viscosity is η_r = 10¹³ [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, l_i is a product of molar part x_i and a specific dimensionless coefficient 0 ≤ k_i ≤ 1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature T_r,SiO2 of pure SiO₂.     

Comparative analysis of two methods of calculation of the orientation of domain walls in ferroelastics

Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.     

A review of measurement of thermophysical properties of silicon melt

Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi₃ existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.     

Generation of crystal structures of heteromolecular compounds by the method of discrete modeling of packings

Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.