Size effect of half-metallic properties of BN/C hybrid nanoribbons

Based on the first-principle calculations performed by Vienna Ab initio simulation package (VASP), we report the size limitation of half-metallic properties in hybrid zigzag BCN nanoribbons. Both boron–carbon (B–C) and nitrogen–carbon (N–C) interfacial hybrid zigzag BCN nanoribbons are considered. We find that all hybrid systems establish antiferromagnetic ground states. Moreover their electronic properties are mainly determined by the carbon rather than boron nitride segments. Transitions between semiconductor, half-metal and metal can be realized in both systems as the width of the carbon segment increases. However, the half-metallic property can only exist in the systems for which the zigzag carbon chain is less than 6 and 9 for B–C and N–C interfacial systems, respectively. As long as the carbon segment is wider than the above sizes, the systems behave as metals. This effect derives from the electron or hole doping of carbon on the BN segment.     

N NMR in AlN and BN

A characterisation by ¹⁴N NMR of the binary nitrides AlN and BN is presented. Both the static and magic angle spinning (MAS) lineshapes have been investigated in order to determine, or set upper limits on, the nuclear quadrupole coupling (C_q) at the nitrogen site. Additional data are given for the C_q values at the Al and B sites. A comparison is made with other similar (mainly wurtzite) binary compounds for which C_q is known at each atomic site.     

Magnetic and electronic properties of zigzag BN nanoribbons with nonmetallic atom terminations: A first-principles study

The boron nitride (BN) nanosheet is an isostructural analog of graphene and can be viewed as the structure that C atoms in graphene are replaced with alternating B and N. The easily modulated band-gap of BN nanosheet by simply passivating its edge(s) makes it is promising for many potential applications in nanodevices and nanoelectronics. We further systematically theoretically study the magnetic and electronic properties of passivated-ZBNNR by nonmetallic atom(s), here. According to our calculations, all considered structures show magnetic feature, and the ZBNNRs can be metal or half-metal or semiconductor depending on the termination details. The great application-potential of the passivated-ZBNNRs is further confirmed based on our results.     

Electronic structures of zigzag AlN, GaN nanoribbons and AlxGa1−xN nanoribbon heterojunctions: First-principles study

The electronic and structural properties of zigzag aluminum nitride (AlN), gallium nitride (GaN) nanoribbons and Al_xGa_1−xN nanoribbon heterojunctions are investigated using the first-principles calculations. Both AlN and GaN ribbons are found to be semiconductor with an indirect band gap, which decreases monotonically with the increased ribbon width, and approaching to the gaps of their infinite two dimensional graphitic-like monolayer structures, respectively. Furthermore, the band gap of Al_xGa_1−xN nanoribbon heterojunctions is closely related to Al (and/or Ga) concentrations. The Al_xGa_1−xN nanoribbon of width n=8 shows a continuously band gap varying from about 2.2 eV-3.1 eV as x increases from 0 to 1. The large ranged tunable band gaps in such a quasi one dimension structure may open up new opportunities for these AlN/GaN based materials in future optoelectronic devices.     

The influence of NH3 -attaching on the NMR parameters in the zigzag BN nanotube

Two models of (10, 0) boron nitride nanotubes (BNNTs), perfect and Ammonia-attached, were studied in order to evaluate the influence of NH₃-attaching on the B-11 and N-15 nuclear magnetic resonance in the (10, 0) boron-nitride nanotube (BNNT) for the first time. At first, based on density functional theory (DFT) each of the structures was optimized using B3LYP/6-31G (d) model chemistry. At the next step, the chemical-shielding (CS) tensors were calculated using the B3LYP/6-31G (d, p) level of theory in both of the relaxed forms and were converted to experimentally measurable nuclear magnetic resonance (NMR) parameters, i.e. chemical-shielding isotropic (CSI) and chemical-shielding anisotropic (CSA). Our calculation revealed that in the NH₃-attached BNNT (the most stable model) the B atom chemically bonded to the NH₃ molecule has the largest chemical-shielding isotropic (CSI) and the smallest chemical-shielding anisotropic (CSA) values among the other boron nuclei. Additionally, the NMR parameters of those nuclei directly bonded to the boron dramatically change while those of the other B nuclei remain almost unchanged.     

Curvature effect on the electronic properties of BN nanoribbons

Density functional theory calculations have been used to investigate the rolling process of armchair boron nitride nanoribbons (n-ABNNRs, n?=?6,?8,?10,?12,?14,?16) to form (n,?0) zigzag boron nitrogen nanotubes (ZBNNTs, n?=?3–8). Results showed that by rolling (increasing the curvature) energy gap decreases and the difference between the initial and final states increases dramatically with decreasing the ribbon width. It was found that ZBNNTs have direct band gaps and the gap increases by diameter, while ABNNRs have direct band gaps which oscillate with the ribbon width.     

Surface acoustic wave device properties of (B, Al)N films on 128° Y-X LiNbO3 substrate

A c-axis orientated aluminium nitride (AlN) film on a 128° Y-X lithium niobate (LiNbO₃) surface acoustic wave (SAW) device which exhibit a large electromechanical coupling coefficient (k²) and a high SAW velocity property, is needed for future communication applications. In this study, a c-axis orientated (B, Al)N film (with 2.6 at.% boron) was deposited on a 128° Y-X LiNbO₃ substrate by a co-sputtering system to further boost SAW device properties. The XRD and TEM results show that the (B, Al)N films show highly aligned columns with the c-axis perpendicular to the substrate. The hardness and Young's modulus of (B, Al)N film on 128° Y-X LiNbO₃ substrates are at least 17% and 7% larger than AlN films, respectively. From the SAW device measurement, the operation frequency characteristic of (B, Al)N film on 128° Y-X LiNbO₃ is higher than pure AlN on it. The SAW velocity also increases as (B, Al)N film thickness increases (at fixed IDT wavelength). Furthermore, the k² of (B, Al)N on the IDT/128° Y-X LiNbO₃ SAW device shows a higher value than AlN on it.     

A first-principles investigation on the effect of the divacancy defect on the band structures of boron nitride (BN) nanoribbons

On the basis of the comprehensive first-principles computations, we investigated the geometries, electronic and magnetic properties of zigzag and armchair boron nitride nanoribbons (BNNRs) with the divacancy defect of 5–8–5 ring fusions formed by removing B–N pair, where the defect orientation and position are considered. Our computed results reveal that all of the defective BNNRs systems can uniformly exhibit nonmagnetic semiconducting behavior, and the formation of the divacancy 5–8–5 defect can significantly impact the band structures of BNNRs with not only the zigzag but also armchair edges, where their wide band gaps are reduced and the defect orientation and position play an important role. Clearly, introducing divacancy defect can be a promising and effective approach to engineer the band structures of BNNRs, and the present computed results can provide some valuable insights for promoting the practical applications of excellent BN-based nanomaterials in the nanodevices.     

The dispersion properties of surface acoustic wave devices on AlN/LiNbO3 film/substrate structure

Highly c-axis oriented aluminum nitride (AlN) films were deposited on z-cut LiNbO₃ substrates by reactive rf magnetron sputtering. The crystalline properties investigated by X-ray diffraction (XRD) revealed that AlN film with (0 0 2) preferred orientation was improved by an increase of the deposition time within the experimental range. However, the surface morphology of AlN film measured by scanning probe microscopy (SPM) showed that the roughness was getting worse with increase of deposition time. Surface acoustic wave (SAW) properties, measured by a network analyzer in the structure consisting of highly c-axis AlN films on z-cut LiNbO₃ substrates, were investigated. The phase velocity (V_P) was significantly increased by the increase of h/λ, where h is the thickness of AlN film and λ is the wavelength. However, the insertion loss (IL) of SAW filters was also increased by the increase of h/λ. Experimental results on the temperature characteristics of SAW devices are also presented.     

GGA-based analysis of the metformin adsorption on BN nanotubes

Density functional theory (DFT) studies are done to investigate structural and electronic properties of (5,5) chirality single walls boron nitride nanotubes (BNNTs) in the armchair model interacting with metformin (MF) on the surface and ends. Our calculations consider the exchange-correlation energies with the Hamprecht–Cohen–Tozer–Handy functional within the generalized gradient approximation (HCTH-GGA) and the double polarized DNP base function. The geometry optimization follows the minimum energy criterion for all six geometries we have considered. Results show that the MF is adsorbed through the groups NH₂–NH at one end of the nanotube. The system polarity is increased which indicates the possible dispersion and solubility. Moreover the interaction between these species induces an increase in the chemical reactivity of the order of 0.42 eV. Meanwhile the solvation in water keeps the semiconductor characteristics of both nanotube and MF. The work function of the BNNT-MF is drastically reduced respect to the pristine system when the BN nanotube is doped at its surface and ends with carbon. This means that the functionalized BN nanotube facilitates conditions to improve field emission.     

Interfacial properties of AlN and oxidized AlN on Si

We report on the characteristics of metal-insulator-semiconductor (MIS) capacitors with aluminum nitride (AlN) as the insulator material. AlN has been grown on (1 1 1) Si by means of molecular beam epitaxy (MBE) and DC magnetron sputtering (SPU). AlN layers have been characterized before and after dry thermal oxidation in O₂. By analyzing changes in morphology and electrical properties, different oxidation mechanisms were identified, due to the crystalline quality difference of the AlN samples. In both cases, oxidation at 1000 °C was beneficial for the electrical characteristics of the MIS structures, presumably due to passivation of atom vacancies. Although AlN was only partially oxidized, the flat-band voltage was reduced and the density of interface traps improved. Dominant conduction mechanism was Poole-Frenkel for the SPU sample, and changed to hopping after oxidation.     

First-principles density-functional calculations on the field emission properties of BN nanocones

The first-principles density-functional theory is used to study the geometrical structures and field emission properties of different boron nitride nanocones with 240 disclination. It is found that the nanocones can be stable under applied electric field and the emission current is sensitively dependent on the tips of nanocones. The nanocones with homonuclear bonds at the tip can introduce additional energy states near Fermi level, which can reduce the ionization potential and increase the emission current of these boron nitride nanocones. This investigation indicates that the boron nitride nanocone can be a promising candidate as a field emission electron source.     

A first-principles study on the interaction of CO molecules with VIII transition metals-embedded graphitic carbon nitride as an excellent candidate for CO sensor

We studied the adsorption behavior of CO molecules over graphitic carbon nitride (gCN) and VIII transition metals (TM)-embedded gCN systems (TM=Ni, Pd, and Pt atoms) using density functional theory. The results indicated that the Pt-embedded gCN is excellent candidate for adsorption of CO molecules with adsorption energy of −2.77 eV, which is much better than those of the other adsorbents. Furthermore, it was observed that the band gap energies of TM-embedded systems were less than that of pristine gCN and decoration of transition metal atoms leads to the formation of mid gap impurity states, resulting in increase of electrical conductivity. Additionally, the Lowdin charges displayed that upon adsorption of CO molecules, this molecule acts as an electron acceptor and gCN systems behave as an electron donor with electron transfer from d-orbitals of transition metal atoms to the states of CO molecule. The results of spin polarized band structure indicated that the pristine gCN, Ni and Pd-embedded systems are non-magnetic, whereas Pt-embedded gCN induces non-zero magnetic moment equal to 1.35 μB. Therefore, our results revealed that among the TM-embedded systems, Pt-embedded gCN is more effective than those of the other adsorbents in sensing and removing of this gas from the atmosphere.     

Adsorption of HCN molecules on Ni,Pd and Pt-doped (7, 0) boron nitride nanotube: a DFT study

We studied affinity of pure and Ni, Pd and Pt-doped (7, 0) boron nitride nanotubes (BNNTs) to toxic HCN molecules using density functional theory calculations. The results indicated that the pure (7, 0) BNNTs can weakly adsorb HCN molecules with adsorption energy of ?0.2474 eV. Upon adsorption of HCN molecules on this nanotube, the band gap energy was decreased from 3.320 to 2.960 eV. The more negative adsorption energy between these transition metal-doped (7, 0) BNNTs and HCN molecules indicated that doping of (7, 0) BNNTs with Ni, Pd and Pt elements can significantly improve the affinity of BNNTs toward this gas. Additionally, it was found that the interaction energy between HCN molecules and Pt-doped BNNTs is more negative than those of the Ni and Pd-doped BNNTs. These observations suggested that the Pt-doped (7, 0) BNNTs are strongly sensitive to HCN molecules and therefore it may be used in gas sensor devices for detecting this toxic gas.     

Synthesis of hexagonal boron nitride thin film on Pt substrates for resistive switching memory applications

Hexagonal boron nitride (hBN), due to its high reliability as a two-dimensional (2D) dielectric material, has attracted much attention for its potential applications in nanoelectronic devices. Here, the use of radio frequency (RF) magnetron sputtering-grown hBN films to construct hBN-based resistive switching (RS) memory device is reported, and the RS mechanism is deduced. The hBN-based RS memory shows low operating voltage, reproducible write cycles, and long retention time. First-principles simulations further confirm the resistive switching. This work provides an important case to facilitate the future applications of 2D materials in the RS memory.     

Effect of post heat treatment on microstructure and photocatalytic activities of TiO2 nanoribbons

Low-dimensional TiO₂ nanoribbons were synthesized by a simple one-step hydrothermal method. The TiO₂ nanoribbons were calcined over the temperature range 200-800 °C in order to enhance their photocatalytic properties by altering their crystal phase and increasing crystallization. Effects of hydrothermal temperature, calcinated temperature and calcination time on the formation of nanostructures have been observed and characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The (BET) specific surface area of the samples which with different post treatments were determined by N₂ absorption-desorption experiment. In addition, photocatalytic activities of the nanoribbons were evaluated by photodegradation of organic dyes methyl orange under the radiation of UV light. The results reveal that the post-treatments have great effects on the microstructures and the photocatalytic activities of TiO₂ nanoribbons.     

Adsorption of SO2 molecule on doped (8, 0) boron nitride nanotube: A first-principles study

Adsorptions of SO₂ on Al-, Ca-, Co-, Cu-, Ge-, Ni-, and Si-doped (8, 0) boron nitride nanotube (BNNT) have been studied using first-principles approach based on density functional theory in order to exploit their potential applications as SO₂ gas sensors. The electronic properties of the BNNT-molecule adsorption adducts are strongly dependent on the dopants. The most stable adsorption geometries, adsorption energies, charge transfers, and density of states of these systems are thoroughly discussed. This work reveals that the sensitivity of (8, 0) BNNT based chemical gas sensors for SO₂ can be drastically improved by introducing appropriate dopant. Si is found to be the best choice among all the dopants.     

Adsorption of mercaptopurine drug on the BN nanotube,nanosheet and nanocluster: a density functional theory study

ABSTRACT

We have investigated the interaction of mercaptopurine (MP) drug with BN nanotube, nanosheet and nanocluster using density functional theory calculations in the gas phase, and aqueous solution. We predicted that the MP drug tends to be physically adsorbed on the surface of BN nanosheet with an adsorption energy (E_ad) about ?3.2?kcal/mol. The electronic properties of BN nanosheet are not affected by the MP drug, and this sheet is not a sensor. But the electronic properties of BN nanotube and nanocluster are significantly sensitive to this drug in both gas phase, and aqueous solution. The BN nanocluster suffers from a long recovery time (8.8?×?10⁸?s) because of a strong interaction (E_ad?=??28.6?kcal/mol), and this cluster is not a proper sensor for MP detection. But the BN nanotube benefits from a short recovery time about 49.5?s at room temperature, and may be a promising candidate for application in the MP sensors. The water solvent decreases the strength of interaction between the BN nanotube, and MP drug, but it does not affect the electronic sensitivity of the nanotube sensibly.     

The influence of processing gas on the mechanical properties of sputtered B-C-N-H films

This work describes the microstructure and mechanical properties of B-C-N-H films synthesized by medium frequency magnetron sputtering from a boron target in a N₂ + CH₄ + Ar gas mixture. The increase in the CH₄ flow rate increases the carbonaceous compound species, causes the increase of the C atomic concentration and promotes the formation of sp³-hybridized carbon. The change of hardness with the CH₄ flow rate had a relationship with the residual stress. The coefficient of friction was reduced approximately from 0.8 to 0.18, and wear resistance was considerably improved by increasing the flow of CH₄ gas component from 0 to 40 sccm. The change of films’ hardness was discussed and attributed primarily to the internal defects and bonding characteristics, while the superior tribological properties of the films could be assigned to the formation of sp³-hybridized carbon and the C-H bonding.     

A DFT study for adsorption of CO on Ni,Pd and Pt atoms doped (7, 0) boron nitride nanotube

By using density functional theory calculations, we investigated the structural, electronic and magnetic properties of carbon monoxide (CO) adsorption on the pure, Ni, Pd and Pt doped atoms in zigzag single-walled (7, 0) boron nitride nanotubes (BNNTs). The results indicated that compared to the pure (7, 0) BNNTs, replacing B atom by Ni, Pd and Pt atoms can significantly increase the adsorption energy of CO gas on the BNNTs. The adsorption energies of CO gas on the pure (7, 0) Ni, Pd and Pt doped (7, 0) BNNTs are ?0.2013, ?1.746, ?1.593 and ?2.257 eV, respectively. Our results revealed that in comparison with the pure (7, 0) BNNTs, CO gas is chemisorbed on the transition metal doped (7, 0) BNNTs with the appreciable adsorption energy. In addition, it was found that by doping these atoms, band gap energy of the pure (7, 0) BNNTs is considerably decreased. These observations suggested that the Pt doped (7, 0) BNNTs can be introduced as a promising candidate in gas sensor devices for detecting CO gas.