We demonstrate the self‐catalyst growth of vertically aligned InAs nanowires on bare Si(111) by droplet epitaxy. The growth conditions of indium droplets suitable for nucleation and growth of nanowires have been identified. We have then realized vertically aligned and non‐tapered InAs nanowires on bare Si(111) substrates through optimal indium droplets. It was found that the lateral dimensions and density of nano‐wires are defined by the indium droplets. This technique unravels a controllable, cost‐effective and time‐efficient route to fabricating functional monolithic hybrid structures of InAs nanowires on silicon.
Nanostructures formed in a titanium dioxide (TiO2)–poly(styrene)‐block‐poly(ethyleneoxide) nanocomposite film on top of fluor‐doped tin oxide (FTO) layers are investigated. The combinatorial approach is based on probing a wedge‐shaped FTO‐gradient with grazing incidence small angle X‐ray scattering (GISAXS) in combination with a moderate micro‐focus X‐ray beam. The characteristic lateral length is given by adjacent nanowire‐shaped TiO2 regions. It decreases from 200 nm on the thick FTO layer to 90 nm on the bare glass surface.
Spin crossover compounds are considered to be a viable alternative for creating display, memory and switching devices due to the bistability of their magnetic, optical, mechanical and electrical properties. This Letter presents the study of the dielectric and transport properties of the [Fe(Htrz)2(trz)](BF4) (Htrz = 1H‐1,2,4‐triazole) complex in a wide temperature and frequency range. Our results reveal a singular behavior of the dielectric modulus upon the spin transition in conjunction with the switching of the conductivity between the high spin and low spin states.
We report the fabrication procedure and the characterization of an Al0.3Ga0.7As solar cell containing high‐density GaAs strain‐free quantum dots grown by droplet epitaxy. The production of photocurrent when two sub‐bandgap energy photons are absorbed simultaneously is demonstrated. The high quality of the quantum dot/barrier pair, allowed by the high quality of nanostructured strain‐free materials, opens new opportunities for quantum dot based solar cells.
We present metal wrap through (MWT) silicon solar cells with passivated surfaces based on a simplified device structure. This so‐called HIP‐MWT structure (high‐performance metal wrap through) does not exhibit an emitter on the rear side and therefore simplifies processing. The confirmed peak efficiency of the fabricated solar cells with an edge length of 125 mm, screen printed contacts and solder pads is 20.2%. To our knowledge, this is the highest value reported for large‐area p‐type silicon solar cells to date.
Persistent layer‐by‐layer growth is demonstrated for pulsed‐laser homoepitaxy of ZnO thin films on $(000\bar 1)$ ZnO single crystals. Employing interval pulsed‐laser deposition (PLD), RHEED oscillations are stabilized over a film thickness of about 90 nm. For interval pulsed laser deposited films a considerably decreased root‐mean‐square surface roughness of 0.26 nm was found, in comparison to 0.74 nm for conventional PLD. A small asymmetry in the X‐ray diffraction (XRD) 2θ –ω scan reveals compressive strain in the thin film being slightly larger for interval PLD as compared to conventional PLD. The FWHM of the photoluminescence (PL) I6 line is higher with about 500 µeV as compared to 350 µeV for the conventional PLD. Consequently, both XRD as well as PL indicate a slightly higher amount of charged defects for the interval PLD.
The authors describe an organic complementary inverter with N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide as an n‐type semiconductor and pentacene as a p‐type semiconductor. Each transistor of the inverter exhibited high carrier mobility: 1.62 cm2/Vs for an n‐type drive transistor and 0.57 cm2/Vs for a p‐type switch transistor. The gain of the inverter reached 125. Another inverter using Ta2O5 as a high κ gate dielectric performed well with a gain of 500 and an operation voltage of only 5 V.
We present experimental and theoretical evidence of the role played by the spin–orbit coupling in the electronic structure of a pseudomorphic Au monolayer on Nb(001) substrate. The bands found with the help of the angle‐resolved ultraviolet photoelectron spectroscopy (ARUPS) are compared with those obtained from ab initio self‐consistent calculations by the VASP and WIEN2k codes. The slab calculations are performed including geometric relaxation and using both the generalized‐gradient (GGA) and local‐density (LDA) approximations for the exchange–correlation energy. The dispersions and energy positions of the calculated bands agree with the experimentally determined band structure only if the LDA is used and the spin–orbit coupling is included. Therefore, both the structure relaxation and spin–orbit coupling are essential in understanding the electronic structure of the Au/Nb(001) system.
We present a computational study based on time‐dependent density functional theory of the optical absorption spectra of TiO2 nanowires sensitized with organic dye molecules. We concentrate on catechol and squaraine dyes. For those molecules, we compute adsorption geometries and energies and investigate the optical properties of the combined dye– nanowire system. We find that although the molecules have qualitatively different optical spectra in the gas phase, both lead to an enhancement of the absorption in the visible frequency range when adsorbed on a nanowire.
We present an L‐shaped nanoprobe for scanning electrochemical microscopy–atomic force microscopy (SECM–AFM) capable of imaging the surface topography and the electrochemical activity of nanostructures of interest. Owing to the geometry of the protrusive peak in the L‐shaped probe, the distance between the probe electrode and the substrate is maintained precisely at ～100 nm during surface scanning. The reduction in electrode‐to‐substrate distance significantly improves the positive feedback current on top of the electrochemically active nanomaterials. The L‐shaped nanoprobe successfully acquired simultaneous a topographical image and an electrochemical current image of individual carbon nanotubes (CNTs) in a two‐dimensional (2D) CNT network.
Rapid quantification of structural defects, especially dislocations, is desired for characterization of semiconductor materials. Herein, we outline and validate a low‐cost approach for dislocation‐density quantification in silicon, involving a high‐resolution commercial dark‐field imaging device, a flatbed scanner. This method requires minimal surface preparation and can be performed on as‐cut 15.6 × 15.6 cm2wafers in less than 5 minutes. The method has been tested at a spatial resolution down to 250 µm. At 1 mm resolution, the average root mean square of the normalized error was 0.39.
Three‐dimensional (3D) CeO2 micropillows were synthesized by using solvothermal method. The pH of the precursor solution was adjusted to 10 by adding ammonium hydroxide. The structural, morphology and compositional characteristics of CeO2 micropillows were investigated by XRD, SEM, TEM and EDAX. XRD analysis showed the formation of CeO2 micropillows. BET analysis showed high specific surface area for the synthesized CeO2 micropillows (191 m2 g–1). Optical absorption of CeO2 micropillows showed enhanced photoabsorption ability with the estimated band gap energy of 2.8 eV. The photodegradation rate of the CeO2micropillows was found to be 87% and obeys pseudo‐first‐order equation. The photocatalytic results indicated that the CeO2 micropillows exhibit enhanced photocatalytic property towards azo dye acid orange 7 (AO7) under UV–Vis light illumination.
We report on solution‐processible polymer solar cells (PSCs) fabricated on a papery substrate using carton. Highly conductive PEDOT:PSS was used as a bottom anode and planarization layer, and a semi‐transparent top cathode was applied. This research could be an important approach to the development of all‐solution‐processible papery PSCs as well as paper electronics.
We have fabricated multi‐peak and chromaticity‐stable top‐emitting white organic light‐emitting diodes (TEWOLEDs) using single blue emitter. Besides the intrinsic emission of blue emitter, the additional emission can be well realized by simply adjusting the thickness of hole transporting layer (HTL), thus modifying the optical cavity length to obtain different resonant wavelengths. The detailed variation process for multi‐peak spectra with the increase of HTL thickness is studied, which provides a guidance for the design of microcavity TEWOLEDs.
In the present work we use a series of Ti–Ru alloys, with minor amounts of Ru (0.01, 0.02, 0.05 and 0.2 at%) to grow anodic self‐organized Ru‐doped TiO2 nanotube layers. When used in dye‐sensitized solar cells (DSSCs), the nanotube layers with an optimum amount of Ru (0.02 at% Ru in the alloy) show a considerable increase in solar cell efficiency (η = 5.2%) under AM1.5 (100 mW/cm2) conditions compared with non‐doped TiO2 nanotubes (η = 4.3%).
In this Letter, we report on a new nanofabrication technology to yield highly arrayed nanoelectrodes for organic–inorganic solar cells that promise new levels of performance and efficiency. This technology efficiently controls the effective area of highly arrayed nanoelectrodes and allows for the maximum incorporation of organic materials within the voids. Particularly the 3D parameters such as thickness, spacing, and height of the nanostructures are controlled non‐lithographically by atomic layer deposition technology.
We present a simplified process sequence for the fabrication of large area n‐type silicon solar cells. The boron emitter and full area phosphorus back surface field are formed in one single high temperature step using doped glasses deposited by plasma enhanced chemical vapour deposition (PECVD) as diffusion sources. By optimizing the gas composition during the PECVD process, we not only prevent the formation of a boron rich layer (BRL), but also achieve doping profiles that exhibit a low dark saturation current density while allowing for contact formation by screen printing. The presented co‐diffusion process allows for major process simplification compared to the state of the art diffusion process relying on multiple high temperature processes, masking and wet chemistry steps.
Write‐once–read‐many‐times memory (WORM) devices were fabricated using Ti/Au and Au as top contacts on ZnO thin films on Si. Electrical characterization shows that both types of WORM devices have large resistance OFF/ON ratio (R ratio), small resistance distribution range, long retention and good endurance. WORM devices with Au top contact have better performance of higher R ratio because of a larger work function of Au compared to Ti.
Heteroepitaxial growth of III‐Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au‐seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb–GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained.
