Anomalous Hall effect and perpendicular magnetic anisotropy in Sm28Fe72 and Sm32Fe68 thin films

Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films of 100 nm thickness were grown using DC magnetron sputter deposition and their structure, magnetization, electrical and Hall resistance characteristics were investigated. An increase in electrical resistivity from 4.75×10⁻⁶ to 5.62×10⁻⁶ Ω m and from 2.26×10⁻⁶ to 2.84×10⁻⁶ Ω m for Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films, respectively, with decrease in temperature from 300 to 40 K is attributed to the strain induced anisotropy that dominates at lower temperatures. The positive extraordinary Hall coefficients (R_S) are observed for both films at 300 and 80 K. The existence of hysteresis indicates that Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films possess perpendicular anisotropy at 300 K. Hysteresis loop becomes narrow at 80 K for both Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films. Magnetization measurements at 300 K exhibiting small coercive field values of 31 and 49 Oe for Sm₂₈Fe₇₂ and Sm₃₂Fe₆₈ films, respectively, confirm the existence of perpendicular anisotropy at 300 K.     

Magnetic properties of co-sputtered Tb-Co2FeAl films with perpendicular anisotropy

We present a systematic study on magnetic properties of co-sputtered Tb-Co₂FeAl (TCFA) films. The TCFA films with suitable Tb content have perpendicular magnetic anisotropy (PMA). The PMA deteriorates with both decreasing film thickness and high temperature annealing. Under a certain thickness, the perpendicular coercivity of the TCFA films with PMA can be reduced down to 60 Oe, which is comparable with normal soft ferromagnets. After annealing at 100 °C, a large remanence squareness of 0.95 is observed in the TCFA film with 33% Tb and a thickness of 30 nm.     

Composition dependence of magnetic anisotropy and quadratic magnetooptical effect in epitaxial films of the Heusler alloy Co2MnGe

Magnetic anisotropy and magnetooptic Kerr effect for epitaxial films of Co_xMn_yGe_1−x−y grown on Ge (1 1 1) substrates have been studied systematically in the compositional vicinity of the Heusler alloy Co₂MnGe. A large quadratic magnetooptic Kerr effect has been observed within a narrow region of composition centered around the Co to Mn atomic ratio of 2. The effect has been used to probe and quantify the magnetic anisotropy of the system, which is shown to have a strong sixfold in-plane component accompanied by a weak uniaxial component at room temperature. These properties are shown to depend sensitively on atomic ratio between Co and Mn, indicating the presence of an intrinsic composition-driven phenomenon.     

Dynamic susceptibility of thin films with perpendicular magnetic anisotropy

We investigate the spin dynamics related to the Gilbert damping constant in infinite continuous thin films with perpendicular magnetic anisotropy (PMA), based on numerical and analytic approaches. We obtain the dynamic susceptibility of the infinite continuous thin films with various PMA energies by using micromagnetic simulations with periodic boundary conditions. These results are compared with the analytic solution that we derived from the Landau–Lifshitz–Gilbert equation. Based on our numerical and analytic studies, we support the physical analysis for results in the experimental determination of the Gilbert damping constant for PMA materials.     

Magnetic properties of a Pt/Co2FeAl/MgO structure with perpendicular magnetic anisotropy

Microstructures and magnetic properties of Ta/Pt/Co 2 FeAl（CFA）/MgO multilayers are studied to understand perpendicular magnetic anisotropy（PMA） of half-metallic full-Heusler alloy films.PMA is realized in a 2.5-nm CFA film with B2-ordered structure observed by a high resolution transmission electron microscope.It is demonstrated that a high quality interface between the ferromagnetic layer and oxide layer is not essential for PMA.The conversions between in-plane anisotropy and PMA are investigated to study the dependence of magnetic moment on temperature.At the intersection points,the decreasing slope of the saturation magnetization（M s） changes because of the conversions.The dependence of M s on the annealing temperature and MgO thickness is also studied.     

Co0.9Fe0.1薄膜面内元素分辨的磁各向异性

利用X射线磁性圆二色技术对Co_0.9Fe_0.1薄膜面内元素分辨的磁各向异性进行了研究，通过剩磁模式测量不同磁化方向的样品组分原子单位空穴磁矩的变化，发现除了在生长的磁诱导方向存在易磁化轴外，在与该轴垂直的方向还存在一个类似易轴的软磁化轴；面内的两个难磁化轴与易磁化轴取向大约成66°夹角，从而构成了面内双轴磁各向异性；对不同组分元素，其单位空穴磁矩随磁化方向的变化趋势基本相同，不同磁化方向Fe原子单位空穴的磁矩值约为Co的对应值的87%，反映了Fe原子和Co原子之间存在着强烈的铁磁性耦合. 关键词： 磁各向异性 X射线磁性圆二色 铁磁耦合 CoFe合金薄膜     

Current induced domain wall motion in nanostripes with perpendicular magnetic anisotropy

We report micromagnetic modeling results of current induced domain wall (DW) motion in magnetic devices with perpendicular magnetic anisotropy by solving the Landau-Lifschitz-Gilbert equation including adiabatic and non-adiabatic terms. A nanostripe model system with dimensions of 500 nm (L)×25 nm (W)×5 nm (H) was selected for calculating the DW motion and its width, as a function of various parameters such as non-adiabatic contribution, anisotropy constant (K_u), saturation magnetization (M_s), and temperature (T). The DW velocity was found to increase when the values of K_u and T were increased and the M_s value decreased. In addition, a reduction of the domain wall width could be achieved by increasing K_u and lowering M_s values regardless of the non-adiabatic constant value.     

垂直各向异性Ho3Fe5O12薄膜的外延生长与其异质结构的自旋输运

垂直磁各向异性稀土-铁-石榴石纳米薄膜在自旋电子学中具有重要应用前景.本文使用溅射方法在(111)取向掺杂钇钪的钆镓石榴石(Gd_0.63Y_2.37Sc₂Ga₃O₁₂,GYSGG)单晶衬底上外延生长了2—100 nm厚的钬铁石榴石(Ho₃Fe₅O₁₂,HoIG)薄膜,并进一步在HoIG上沉积了3 nm Pt薄膜.测量了室温下HoIG的磁各向异性和HoIG/Pt异质结构的自旋相关输运性质.结果显示,厚度薄至2 nm的HoIG薄膜(小于2个单胞层)在室温仍具有铁磁性,且由于外延应变,2—60 nm厚HoIG薄膜都具有很强的垂直磁各向异性,有效垂直各向异性场最大达350 mT;异质结构样品表现出非常可观的反常霍尔效应和“自旋霍尔/各向异性”磁电阻效应,前者在HoIG厚度小于4 nm时开始缓慢下降,而后者当HoIG厚度小于7 nm时急剧减小,说明相较于反常霍尔效应,磁电阻效应对HoIG的体磁性相对更加敏感;此外,自旋相关热电压随HoIG厚度减薄在整个厚度范围以指数方式下降,说明遵从热激化磁振子运动规律的自旋塞贝克效应是其主要贡献者.本文结果表明HoIG纳米薄膜具有可调控的垂直磁各向异性,厚度大于4 nm的HoIG/Pt异质结构具有高效的自旋界面交换作用,是自旋电子学应用发展的一个重要候选材料.     

Analytic theory of wall configuration and depinning mechanism in magnetic nanostructure with perpendicular magnetic anisotropy

We present an analytic theory of the domain wall depinning in magnetic nanostructure with perpendicular magnetic anisotropy. The variational principle reveals that the wall is bent in the form of a circular arc which intersects the structure boundaries perpendicularly. The radius is inversely proportional to the magnetic field. With increasing the field the radius shrinks, followed by depinning from the constriction when the arc is not geometrically allowed. The depinning field is proportional to the sine of the constriction angle and the inverse of the constriction width. The validity of the theory is confirmed by comparison with the micromagnetic simulation.     

Underlayer dependence of electric field effect on magnetic anisotropy and its volatility in CoFeB/MgO structures

We report the dependence of voltage-controlled magnetic anisotropy (VCMA) effect and its volatility on an underlayer (UL) in CoFeB/MgO structures. For a sample with Ta or Pt UL, the VCMA effect occurs when the applied gate voltage (V_g) exceeds a critical value, and it persists even after removing V_g. This is in contrast to the volatile VCMA effect and its linear dependence on V_g in a sample with W UL. Furthermore, we demonstrate that the volatility of the VCMA effect can be modified by introducing a Ta/W bilayer, enabling arbitrary control of the magnetic properties via VCMA effect.     

Mössbauer effect investigations of Co83Fe17/Au/Co/Au multilayers

[Co₈₃Fe₁₇/Au/Co/Au]_N sputter deposited multilayers displaying a giant magnetoresistance have been investigated. Complementary magnetic measurements were conducted in order to characterize a spin reorientation transition in Co₈₃Fe₁₇ layers sandwiched between Au spacers. The transition from a perpendicular magnetic anisotropy to easy-plane one takes place at the thickness of about 1 nm.     

磁各向异性热电效应对自旋相关器件的影响

在纳米点接触热电效应的实验中检测到"T"形Ni线两端的温差电压在外磁场作用下有较大变化,确认了这是由Ni线的磁各向异性热电效应引起的,外磁场的作用总是在逆温度梯度的方向产生一个额外的电动势,它与磁场以及Ni线两端温度差之间有清晰的对应关系.实验结果提示,自旋相关效应器件的研究需要留意器件样品的磁性材料构形设计和测试方法,以避免混入额外的电磁信号,给实验结果带来误判.     

Temperature and bias voltage dependence of Co/Pd multilayer-based magnetic tunnel junctions with perpendicular magnetic anisotropy

Temperature- and bias voltage-dependent transport measurements of magnetic tunnel junctions (MTJs) with perpendicularly magnetized Co/Pd electrodes are presented. Magnetization measurements of the Co/Pd multilayers are performed to characterize the electrodes. The effects of the Co layer thickness in the Co/Pd bilayers, the annealing temperature, the Co thickness at the MgO barrier interface, and the number of bilayers on the tunneling magneto resistance (TMR) effect are investigated. TMR-ratios of about 11% at room temperature and 18.5% at 13 K are measured and two well-defined switching fields are observed. The results are compared to measurements of MTJs with Co-Fe-B electrodes and in-plane anisotropy.     

一级磁结构相变材料Mn0.6Fe0.4NiSi0.5Ge0.5和Ni50Mn34Co2Sn14的磁热效应与磁场的线性相关性

磁熵变（△S_M）与磁场（μ₀H）的相关性已在很多二级相变材料中被研究并报道,但一级相变材料的磁热效应与磁场相关性还少有报道.本文在具有一级磁结构相变的Mn_0.6Fe_0.4NiSi_0.5Ge_0.5材料中研究发现△S_M与μ₀H存在线性相关性,并通过麦克斯韦关系式的数值分析详细讨论了这一线性相关性的来源.同时,进一步发现在低磁场时,△S_M近似正比于μ₀H的平方.该线性相关性同样在一级磁结构相变Ni₅₀Mn₃₄Co₂Sn₁₄材料中得到了印证.但由于一级磁弹相变LaFe_11.7Si_1.3材料相变温度具有更强的磁场依赖性,不具有△S_M的线性相关性,因此,本研究表明,当磁结构相变材料的相变温度具有弱磁场依赖性时,△S_M与μ₀H具有线性相关性.进而,在磁场未达到相变饱和磁场以下,利用△S_M与μ₀H的线性相关性可以有效推测更高磁场下的△S_M.     

Microstructural and domain effects in epitaxial CoFe2O4 films on MgO with perpendicular magnetic anisotropy

CoFe₂O₄ (CFO) epitaxial thin films of various thicknesses were grown on MgO substrates using the pulsed electron-beam deposition technique. The films have excellent in-plane coherence with the substrate, exhibit layer-by-layer growth and have well-defined thickness fringes in x-ray diffraction measurements. Atomic force microscopy (AFM) measurements indicate that misfit dislocations form in thicker films and the critical thickness for the dislocation formation is estimated. Perpendicular magnetic anisotropy in CFO due to epitaxial in-plane tensile strain from the substrate was found. A stripe-like domain structure in the demagnetized state is demonstrated using magnetic force microscopy (MFM), in agreement with previous predictions. Coercivity increased in thicker films, which is explained by domain wall pinning due to misfit dislocations at the CFO/MgO interface.     

Co50Fe50-xSix合金的结构相变和磁性

利用实验测量和理论计算相结合的方法,研究了介于B2结构CoFe低有序合金和L21结构Co2FeSi高有序合金之间的Co50Fe50-xSix合金的结构相变、磁相变、分子磁矩和居里温度.采用考虑Coulomb相互作用的广义梯度近似（GGA＋U）方法计算了合金的能带结构.研究发现,合金出现较强的原子有序倾向,表现出较强的共价成相作用.合金的晶格常数、磁矩、居里温度随Si含量的增加而线性地降低,极限成分Co2FeSi合金的分子磁矩和居里温度分别达到5.92μB和777℃.原子尺寸效应导致合金晶格发生变化,但并未成为居里温度和分子磁矩变化的主导因素.分子磁矩的变化符合Slater-Pauling原理,但发现原子磁矩的变化并非线性,据此提出了共价成相对磁性影响的观点.采用Stearns理论解释了居里温度的变化趋势,排除了原子间距对居里温度的主导影响作用.能带计算的结果还表明,Co2FeSi作为半金属材料并非十分完美,可能在实际应用中会出现自旋极化率降低的问题.发现该系列合金的结构相变和磁相变随着成分的变化聚集在窄小的成分和温度范围内.     

Magnetoresistance and magnetostriction of Co2Cr0.6Fe0.4Al Heusler alloy

We report a study of the magnetotransport properties of the Co₂Cr_0.6Fe_0.4Al Heusler alloy grown by means of the arc-melting technique. X-ray diffraction and energy dispersive X-ray spectroscopy have been used to analyze the crystallographic structure and the sample stoichiometry. Temperature-dependent magnetization measurements have been carried out in the range 300-850 K. Co₂Cr_0.6Fe_0.4Al is theoretically predicted to have full positive spin polarization at the Fermi level, and as a consequence its spin-dependent transport properties are being intensively studied. Low field magnetoresistance exceeding 30% has been observed very recently in Co₂Cr_0.6Fe_0.4Al compact pellets. We have performed magnetoresistance and magnetostriction measurements in both the as-grown alloy and compact pellets made of mechanically milled Co₂Cr_0.6Fe_0.4Al. The as-grown and the milled sample show negligible anisotropic magnetostriction (25 μst at saturation), whilst only the milled sample exhibits magnetoresistance (0.65% at 300 K). These results permit us to discard the magnetostrictive effects as the magnetoresistance source.     

Tb0.3Dy0.7Fe2单晶中巨磁致伸缩的逆效应

研究了Terfenol-D材料中巨磁致伸缩的逆效应,即磁机械效应.基于Stoner-Wohlfarth(SW)模型,考虑磁晶各向异性和应力各向异性能,依据自由能极小原理,获得了退磁态下Terfenol-D单晶中磁化强度方向和压应力的关系.采用数值方法求解了平衡条件下的非线性方程组.理论结果表明,Terfenol-D巨磁致伸缩单晶中的磁各向异性取决于磁晶各向异性和应力各向异性之间的竞争.在压应力的作用下,Terfenol-D单晶中的磁各向异性由立方向单轴转变.理论和实验结果的比较表明,存在一个临界压应力,使磁致伸缩效应达到极大值.该理论结果还解释了压应力使得Terfenol-D单晶材料难于磁化和磁致伸缩效应出现极大值的实验事实.理论计算不仅为研究这类问题提供了一个更准确的方法,而且其结果也有助于理解类似材料中的磁化过程.     

Magnetic anisotropy and X-ray magnetic circular dichroism of MnNi surface alloy: Ab initio studies

The magnetic properties of MnNi surface alloy grown on fcc Co(0 0 1) surface have been explored through the full potential linearized augmented plane wave (FLAPW) method. It has been found that one monolayer (ML) of Mn_0.5Ni_0.5 alloy on Co(0 0 1) surface has a ferromagnetic (FM) ground state. We suggest that the direct exchange coupling between Mn and Ni plays an essential role for the ferromagnetism. The vertical position of Mn is higher by 0.26 Å than that of Ni, i.e., the surface has a buckling geometry. In contrast to pure fcc Co(0 0 1) film which has in-plane magnetization, we have obtained that the magnetocrystalline anisotropy of MnNi/Co(0 0 1) due to spin-orbit interaction is perpendicular to the film surface and the magnetic anisotropy energy is 146 μeV/cell. In addition, the theoretically calculated X-ray magnetic circular dichroism (XMCD) is presented.     

Determination of the magnetocaloric effect associated with martensitic transition in Ni46Cu4Mn38Sn12 and Ni50CoMn34In15 Heusler alloys

This paper presents a study of the inverse magnetocaloric effect (MCE) corresponding to martensitic transition using various experimental approaches for Ni46Cu4Mn38Sn12 and Ni50CoMn34In15 Heusler alloy. Through heat capacity measurements,it is found that the "giant inverse MCE" upon martensitic transition evaluated by the Maxwell relation in these alloys are unphysical results. This is due to the coexistence of both martensitic and austenitic phases,as well as thermal hysteresis during martensitic transition. However,careful study indicates that the spurious results during martensitic transition can be removed using a Clausius-Clapeyron equation based on magnetization measurements.