Vacancies in fully hydrogenated boron nitride layer: implications for functional nanodevices

Using density functional theory, a series of calculations of structural and electronic properties of hydrogen vacancies in a fully hydrogenated boron nitride (fH‐BN) layer were conducted. By dehydrogenating the fH‐BN structure, B‐terminated vacancies can be created which induce complete spin polarization around the Fermi level, irrespective of the vacancy size. On the contrary, the fH‐BN structure with N‐terminated vacancies can be a small‐gap semiconductor, a typical spin gapless semiconductor, or a metal depending on the vacancy size. Utilizing such vacancy‐induced band gap and magnetism changes, possible applications in spintronics are proposed, and a special fH‐BN based quantum dot device is designed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

毛刺状竹节结构氮化硼纳米管的合成与生长机理

以非晶硼和氧化镍纳米颗粒为原料,在氨气中1100 oC下合成了毛刺状竹节结构的氮化硼纳米管. 利用X射线衍射和透射电镜研究了氮化硼纳米管的结构和形貌. 竹节结构纳米管表面的毛刺是六方氮化硼的纳米薄片. 提出了一种基于固态硼和气态二氧化硼扩散的毛刺形貌生长机理.     

Probing the out-of-plane distortion of single point defects in atomically thin hexagonal boron nitride at the picometer scale

Crystalline systems often lower their energy by atom displacements from regular high-symmetry lattice sites. We demonstrate that such symmetry lowering distortions can be visualized by ultrahigh resolution transmission electron microscopy even at single point defects. Experimental investigation of structural distortions at the monovacancy defects in suspended bilayers of hexagonal boron nitride (h-BN) accompanied by first-principles calculations reveals a characteristic charge-induced pm symmetry configuration of boron vacancies. This symmetry breaking is caused by interlayer bond reconstruction across the bilayer h-BN at the negatively charged boron vacancy defects and results in local membrane bending at the defect site. This study confirms that boron vacancies are dominantly present in the h-BN membrane.     

The nature of a selective peak in the BK-absorption edge spectrum and the electronic energy band structure of the crystal 3C BN0.99

A new interpretation of the nature of the resonance in the quantum-yield K spectra of boron in the crystal 3C BN is proposed. This interpretation is based on calculation of the electronic energy band structure of the nonstoichiometric boron nitride 3C BN_0.99, which is carried out by the local coherent potential method in the multiple-scattering approximation. The tops of the valence band and of the XANES range of nonstoichiometric and perfect crystals of boron nitride are compared with the x-ray photoelectron spectrum of 3C BN and the BK-absorption edge spectrum. The electronic states near the BK-absorption edge are modeled and discussed for the relaxed and metastable states caused by the formation of vacancies in the nitrogen sublattice.     

Optical performance of materials for X‐ray refractive optics in the energy range 8–100 keV

A quantitative analysis of the crucial characteristics of currently used and promising materials for X‐ray refractive optics is performed in the extended energy range 8–100 keV. According to the examined parameters, beryllium is the material of choice for X‐ray compound refractive lenses (CRLs) in the energy range 8–25 keV. At higher energies the use of CRLs made of diamond and the cubic phase of boron nitride (c‐BN) is beneficial. It was demonstrated that the presence of the elements of the fourth (or higher) period has a fatal effect on the functional X‐ray properties even if low‐Z elements dominate in the compound, like in YB₆₆. Macroscopic properties are discussed: much higher melting points and thermal conductivities of C and c‐BN enable them to be used at the new generation of synchrotron radiation sources and X‐ray free‐electron lasers. The role of crystal and internal structure is discussed: materials with high density are preferable for refractive applications while less dense phases are suitable for X‐ray windows. Single‐crystal or amorphous glass‐like materials based on Li, Be, B or C that are free of diffuse scattering from grain boundaries, voids and inclusions are the best candidates for applications of highly coherent X‐ray beams.     

Nanocarbon hybrids of graphene‐based materials and ultradispersed diamond: investigating structure and hierarchical defects evolution with electron‐beam irradiation

We report the influence of electron‐beam (E‐beam) irradiation on the structural and physical properties modification of monolayer graphene (Gr), reduced graphene oxide (rGO) and graphene oxide (GO) with ultradispersed diamond (UDD) forming novel hybrid composite ensembles. The films were subjected to a constant energy of 200 keV (40 nA over 100 nm region or electron flux of 3.9 × 10¹⁹ cm⁻²s⁻¹) from a transmission electron microscope gun for 0 (pristine) to 20 min with an interval of 2.5 min continuously – such conditions resemble increased temperature and/or pressure regime, enabling a degree of structural fluidity. To assess the modifications induced by E‐beam, the films were analyzed prior to and post‐irradiation. We focus on the characterization of hierarchical defects evolution using in situ transmission electron microscopy combined with selected area electron diffraction, Raman spectroscopy (RS) and Raman mapping techniques. The experiments showed that the E‐beam irradiation generates microscopic defects (most likely, interstitials and vacancies) in a hierarchical manner much below the amorphization threshold and hybrids stabilized with UDD becomes radiation resilient, elucidated through the intensity, bandwidth, and position variation in prominent RS signatures and mapping, revealing the defects density distribution. The graphene sheet edges start bending, shrinking, and generating gaps (holes) at ~10–12.5 min owing to E‐beam surface sputtering and primary knock‐on damage mechanisms that suffer catastrophic destruction at ~20 min. The microscopic point defects are stabilized by UDD for hybrids in the order of GO > rGO ≥ Gr besides geometric influence, i.e. the int erplay of curvature‐induced (planar vs curved) energy dispersion/absorption effects. Furthermore, an attempt was made to identify the nature of defects (charged vs residual) through inter‐defect distance (i.e. L_D). The trends of L_D for graphene‐based hybrids with E‐beam irradiation implies charged defects described in terms of dangling bonds in contrast to passivated residual or neutral defects. More importantly, they provided a contrasting comparison among variants of graphene and their hybrids with UDD. Copyright © 2015 John Wiley & Sons, Ltd.     

Effect of growth temperature on morphology, structure and luminescence of Tb-doped BN thin films

This paper investigates the effect of growth temperature on morphology, structure and photoluminescence (PL) of Tb-doped boron nitride (BN) films grown by magnetron sputtering, and the relationships of growth-temperature-structure-PL by scanning electron microscopy, transmission electron microscopy and PL. The characteristic emission lines of the Tb³⁺ were observed in the PL spectra at room temperature. The 473-K-grown film is mainly consisted of amorphous BN particles. With the growth temperature increasing up to 1273 K, the amount of amorphous BN decreases, while the amount of turbostratic BN increases. Correspondingly, the PL intensities from the Tb³⁺ ions increase with the increase of temperature in the range of 473--1273 K.     

Crystallographic aspects related to the high pressure–high temperature phase transformation of boron nitride

Crystallographic relations between different forms of boron nitride (BN) appearing at the high pressure–high temperature structural phase transformation have been revealed by high-resolution transmission electron microscopy (HRTEM). As starting materials, crystalline hexagonal BN (hBN) with different degrees of crystallinity, or with defects intentionally introduced, were used. Cubic BN (cBN) is formed only as a minor component, the rest consisting of different forms of sp ² bonded BN: hBN, compressed, monoclinic deformed hBN, or turbostratic BN (tBN). The small cBN crystallites (300–400?nm) contain many defects such as twins, stacking faults and nanoinclusions of other BN forms: tBN, rhombohedral BN (rBN) and wurtzite BN (wBN). The cBN phase grows epitaxially on the basal plane of hBN. The nucleation sites for cBN are revealed by HRTEM. They consist of nanoarches (sp ³ hybridized, highly curved nanostructures), frequently observed at the edges of the hBN crystallites in the starting materials. Based on HRTEM observations of specimens not fully transformed, a nucleation and growth model for cBN is proposed which is consistent with existing theoretical and experimental models.     

霍尔推进器壁面材料二次电子发射及鞘层特性

霍尔推进器放电通道等离子体与壁面相互作用形成鞘层,不同壁面材料的二次电子发射对推进器鞘层特性具有重要影响,本文针对推进器壁面鞘层区域建立二维物理模型,研究了氮化硼(BN)、碳化硅(SiC)和三氧化二铝(Al_2O_3)三种不同壁面材料的二次电子发射特性,在改进SiC材料二次电子发射模型的基础上,采用粒子模拟方法,讨论了壁面二次电子发射系数与电子温度和磁场强度的关系,研究了三种材料(BN,SiC和Al_2O_3)的鞘层特性,结果表明:修正的二次电子发射模型拟合曲线与实验曲线几乎一致;在相同电子温度下,三种材料(BN,SiC和Al_2O_3)的二次电子发射系数和壁面电子数密度依次增大,而鞘层电场和鞘层电势降依次减小,BN材料具有合适的二次电子发生射系数,使得霍尔推进器能在低电流下稳态工作。     

On the stoichiometry condition for the formation of cubic boron nitride films

The stoichiometry of boron nitride (BN) films, which are deposited with self-bias-assisted radio frequency (rf) magnetron sputtering of a hexagonal boron nitride (hBN) target, has been investigated with Auger electron spectroscopy (AES) and the MCs⁺-mode of secondary ion mass spectroscopy (MCs⁺-SIMS) for the sake of a better understanding of the growth mechanism of cubic boron nitride (cBN). The cubic fraction of the films is determined with Fourier-transform infrared spectroscopy (FTIR). It is shown that full stoichiometry of the deposited films is decisive for cBN-growth. A substrate bias voltage can increase the N concentration of a growing film under N-deficient deposition conditions. This effect is shown to be temperature dependent. PACS 52.77.Dq; 81.15.Cd; 68.55.Nq     

高温高压下氮化硼的结晶化及立方氮化硼的合成

 研究了非晶BN、二维有序BN和低有序度六方BN（G.I＝6.1）在高温高压下的结晶行为及不同有序度的BN对立方BN合成的影响。研究结果表明，低有序度BN向高有序度六方相转化，但不同有序度的BN原料向立方BN转化的行为不同。少量B掺杂下的立方氮化硼的合成实验发现B的掺入阻碍立方BN的生成。低有序度BN不易向立方BN的主要原因可以认为是它们存在较多的N空位，高温高压下随着BN的结晶化，B以杂质析出并阻碍了立方BN的合成。     

Athermal effects in ion implanted layers

Abstract

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its specific properties to an additional electric field acting on charged particles including carriers and charged defects. It was shown that in case of n-type silicon this extra field draws charged vacancies and self-interstitials towards each other and, thus, diminishes transient diffusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Experiments using light of an Ar-ion laser and white light of a high pressure Xe arc lamp were compared. Some deactivation of carriers in the deeper laying parts of the p-region was always a by-product.     

Quantitative analysis of Mo–Si–B alloy phases with wavelength dispersive spectroscopy (WDS–SEM)

Mo–Si–B alloys show great potential as high temperature materials. Due to peak overlapping of B‐K_α and Mo‐M_ζ, analyzing these alloys with microanalysis presents a real challenge. This paper describes the analytical methodology used to qualify and quantify the boron content in these alloys without stoichiometric reference samples by the use of a single parallel‐beam wavelength dispersive spectrometer. Characterization of boron is performed by using a coupled energy dispersive X‐ray spectroscopy—wavelength dispersive spectroscopy system in a scanning electron microscope. Self‐made pure element samples are used for calibration and quantification of the boron content.     

Changes in the vibrational modes of carbon nanotubes induced by electron‐beam irradiation: resonance Raman spectroscopy

Influence of electron‐beam (e‐beam) irradiation on multi‐walled (MW) and single‐walled (SW) carbon nanotube films grown by microwave chemical vapor deposition technique is investigated. These films were subjected to an e‐beam energy of 50 keV from a scanning electron microscope for 2.5, 5.5, 8.0, and 15 h, and to 100 and 200 keV from a transmission electron microscope for a few minutes to ∼2 h continuously. Such conditions resemble an increased temperature and pressure regime enabling a degree of structural fluidity. To assess structural modifications, they were analyzed prior to and after irradiation using resonance Raman spectroscopy (RRS) in addition to in situ monitoring by electron microscopy. The experiments showed that with extended exposures, both types of nanotubes displayed various local structural instabilities including pinching, graphitization/amorphization, and formation of an intramolecular junction (IMJ) within the area of electron beam focus possibly through amorphous carbon aggregates. RRS revealed that irradiation generated defects in the lattice as quantified through (1) variation of the intensity of radial breathing mode (RBM), (2) intensity ratio of D to G band (I_D/I_G), and (3) positions of the D and G bands and their harmonics (D* and G*) and combination bands (D + G). The increase in the defect‐induced D band intensity, quenching of RBM intensity, and only a slight increase in G band intensity are some of the implications. The MW nanotubes tend to reach a state of saturation for prolonged exposures, while the SW ones transform from a semiconducting to a quasi‐metallic character. Softening of the q = 0 selection rule is suggested as a possible reason to explain these results. Furthermore, these studies provide a contrasting comparison between MW and SW nanotubes. Copyright © 2006 John Wiley & Sons, Ltd.     

Single-walled BN nanostructures

We describe in situ synthesis and characterization of single-walled BN nanotubes terminated by fullerenelike structures using electron-cyclotron resonance nitrogen and electron beam boron sources onto polycrystalline tungsten substrates. Detailed comparisons of experimental high-resolution electron microscopy images and simulations based upon molecular models show a dominance of kinks and bends involving fourfold and eightfold ring structures as against fivefold or sevenfold which have been found with carbon. Analysis of the structures as a function of film thickness indicates that they are growing by addition of atoms to the exposed ends of single sheets, not at the substrate-nanostructure interface.     

Atomic structure of boron nitride nanotubes with an armchair-type structure studied by HREM

Hexagonal networks of boron nitride (BN) nanotubes were investigated by high-resolution electron microscopy (HREM) and image simulation. From HREM images, lattice planes of {002} and hexagonal rings of a BN nanotube were confirmed. Asymmetrical layer arrangements were found, and a structure model for double-walled BN nanotube with an armchair-type structure has been proposed.     

Radiation resistance of boron nitride and related ceramics to low-energy electron irradiation

The radiation resistance of heat-proof ceramics based on boron nitride (BN + Si₃N₄ and BN + SiO₂), which are proposed to be used as structural materials in space ion engines, to low-energy electron irradiation has been investigated.     

Geometric structure and electronic properties of planar and nanotubular BN structures of the Haeckelite type

Planar and nanotubular structures that are based on boron and nitrogen and consist of tetragons, hexagons, and octagons are considered. By analogy with carbon nanoobjects of the same topology, these structures are referred to as Haeckelites. The geometric, electronic, and energy properties are thoroughly investigated for two variants of the regular mutual arrangement of the polygons. It is established that planar and nanotubular BN structures of the Haeckelite type are dielectrics with a band gap E _g ∼ 3.2–4.2 eV, which is less than the band gap E _g for BN nanotubes consisting only of hexagons. The cohesive energy of the BN nanotubes under investigation exceeds the cohesive energy of BN hexagonal nanotubes by 0.3 eV/atom.     

Photoluminescence of hexagonal boron nitride: Effect of surface oxidation under UV-laser irradiation

We report on the UV laser-induced fluorescence of hexagonal boron nitride (h-BN) following nanosecond laser irradiation under vacuum and in different environments of nitrogen gas and ambient air. The observed fluorescence bands are tentatively ascribed to impurity and mono (V_N) or multiple (m-V_N with m=2 or 3) nitrogen vacancies. A structured fluorescence band between 300 and 350 nm is assigned to impurity-band transition and its complex lineshape is attributed to phonon replicas. An additional band at 340 nm, assigned to V_N vacancies on surface, is observed under vacuum and quenched by adsorbed molecular oxygen. UV-irradiation of h-BN under vacuum results in a broad asymmetric fluorescence at ∼400 nm assigned to m-V_N vacancies; further irradiation breaks more B-N bonds enriching the surface with elemental boron. However, no boron deposit appears under irradiation of samples in ambient atmosphere. This effect is explained by oxygen healing of radiation-induced surface defects. Formation of the oxide layer prevents B-N dissociation and preserves the bulk sample stoichiometry.     

Electron-stimulated processes in boron nitride-based ceramics

The low-energy electron radiation resistance of boron nitride-based BN + Si₃N₄ and BN + SiO₂ ceramics proposed as a construction material for ion space engines was studied. It was shown that a reduced silicon phase is formed on the BN + Si₃N₄ ceramics surface in the high-temperature region (～900 K), which results from material thermal destruction. The BN + SiO₂ ceramics exhibits high thermal stability and is not prone to destruction due to electron-stimulated oxygen desorption (the cross section of this process does not exceed 10^?20 cm²). It is preferable to use such ceramics as a construction material. Based on the results obtained, some models were proposed that explain variations in the erosion rate of ceramic units of ion engines under electron and ion irradiation.