Heterocyclic Bismuth(III) Dithiocarbamato Complexes as Single‐Source Precursors for the Synthesis of Anisotropic Bi2S3 Nanoparticles

New complexes catena‐(μ₂‐nitrato‐O,O′)bis(piperidinedithiocarbamato)bismuth(III) ( 1 ) and tetrakis(μ‐nitrato)tetrakis[bis(tetrahydroquinolinedithiocarbamato)bismuth(III)] ( 2 ) were synthesised and characterised by elemental analysis, FTIR spectroscopy and thermogravimetric analysis. The single‐crystal X‐ray structures of 1 and 2 were determined. The coordination numbers of the Bi^III ion are 8 for 1 and ≥6 for 2 when the experimental electron density for the nominal 6s² lone pair of electrons is included. Both complexes were used as single‐source precursors for the synthesis of dodecylamine‐, hexadecylamine‐, oleylamine and tri‐n‐octylphosphine oxide‐capped Bi₂S₃ nanoparticles at different temperatures. UV/Vis spectra showed a blueshift in the absorbance band edge characteristic of a quantum size effect. High‐quality, crystalline, long and short Bi₂S₃ nanorods were obtained depending on the thermolysis temperature, which was varied from 190 to 270 °C. A general trend of increasing particle breadth with increasing reaction temperature and increasing length of the carbon chain of the amine (capping agent) was observed. Powder XRD patterns revealed the orthorhombic crystal structure of Bi₂S₃.     

Reactions of Selected Bismuth Oxide Cluster Cations with Propene

Bismuth oxide cluster ions are reduced by propene in exactly the same way as solid bismuth oxide (Bi₂O₃), which is used as a catalyst. Even in the case of the smallest bismuth oxide cluster ions, such as the Bi₃O₄⁺ isomer shown in the picture, the supposedly unreactive bridging oxygen atom can participate in the alkene oxidation.     

On the structure of evaporated bismuth oxide thin films

The bismuth oxide films evaporated from bulk Bi₂O₃ are shown to vary in stoichiometry. The as-evaporated low rate (1–5 Å/sec) films are microcrystalline and bismuth rich, relative to Bi₂O₃, and their optical absorption edge broadens and shifts to lower energies. High rate (15–25 Å/sec) films are morphous and oxygen-rich with an absorption edge shifted to higher energies. Thermal decomposition of the Bi₂O₃ during evaporation produces the variations in film stoichiometry. The high temperature δ-Bi₂O₃ observed in the as-evaporated low rate films and thermally treated amorphous films indicates the melt and the films are structurally similar. Thermal treatment of the low rate films results in the formation of the β-form. Comparison of X-ray and stoichiometry results suggests that β-Bi₂O₃ be expressed as β-Bi₂O_±3x, where x is the deviation from trioxide stoichiometry.     

Sol-Gel Derived Bismuth Titanate Thin Films with c-Axis Orientation

Bismuth titanate (Bi₄Ti₃O₁₂), a member of the layered perovskite family, has a unique set of ferroelectric properties, which include a high remanent polarization, low coercive field, and high Curie temperature, that make it a possible candidate for data storage applications. For this investigation, bismuth titanate, or BiT, films were fabricated via sol-gel method to examine the effect of processing on phase development and orientation. Solutions were deposited onto platinized silicon, and then heat treated for one hour at temperatures ranging from 550°C to 700°C in 100% O₂. It was found that c-axis orientated BiT films could be formed at temperatures as low as 550°C by using bismuth oxide template layers, while films without bismuth oxide templating possessed a random orientation over the same temperature range.     

Kinetic regularities of thermal transformations in nanosized bismuth films

Transformations in a nanosized bismuth layer are studied by means of optical spectroscopy, microscopy, and gravimetry, depending on the thickness (d = 3–120 nm), thermal treatment temperature (T = 373–673 K) and time (τ] = 0.05–2500 min). It is established that, depending on the initial thickness of the bismuth films and the thermal treatment temperature, the kinetic curves of the degree of transformation are satisfactorily described within linear, inverse logarithmic, cubic, and logarithmic laws. The contact potential difference for the Bi, Bi₂O₃ films and the photo-electromotive force for the Bi-Bi₂O₃ systems is measured. An energy-band diagram for the Bi-Bi₂O₃ systems is constructed. A model for the thermal transformation of Bi films that includes the stage of oxygen adsorption, the redistribution of charge carriers in the Bi-Bi₂O₃ contact field, and the formation of bismuth(III) oxide is proposed.     

Synthesis and properties of bismuth oxide nanoshell coated polyaniline nanoparticles for promising photovoltaic properties

A novel heterostructure made of polyaniline (PANI) nanoparticles coated by nanolayer of bismuth oxide Bi₂O₃ was synthesized. The structure was characterized by scanning electron microscopy, X‐ray diffraction, and transmission electron microscopy. These characterizations showed that the bismuth oxide nanoshell was pure and crystalline, and has thickness in the range of 10 nm. The experiment on photoluminescence (PL) of Bi₂O₃ nanoshell coated polyaniline nanoparticle, at room temperature, shows an emission band peaked at around 385 nm. When compared with the PL spectrum of Bi₂O₃ nanoparticles, about 100 times PL enhancement was found in the PL spectrum of Bi₂O₃ nanoshell coated polyaniline nanoparticle. The current density versus voltage (J–V) measurements in dark and illumination showed that this heterojunction has 4 orders of magnitude rectification in the dark and 3 orders of magnitude rectification under illumination. The obtained power conversion efficiency of polyaniline nanoparticles coated by nanoshell of bismuth oxide (η = 7.453%) was much enhanced compared with polyaniline alone (η = 8.33 × 10^?4%) this indicates that the prepared heterostructure represents a promising photovoltaic solar cell. Copyright © 2009 John Wiley & Sons, Ltd.     

Electrochemical deposition of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> for thermoelectric microdevices

The electrolyses of solutions of bismuth oxide and tellurium oxide in nitric acid with molar ratios of Bi:Te=3:3–4:3 lead to cathodic deposits of films of bismuth telluride (Bi₂Te₃), an n-type semiconductor. Current densities of 2–5 mA/cm² were applied. Voltammetric investigations showed that Bi₂Te₃ deposition occurred at potentials more negative than −0.125 V (Ag/AgCl, 3 M KCl). The deposit was identified as bismuth telluride (γ-phase) by X-ray analysis. Hall-effect measurements verified the n-type semiconducting behaviour. The films can be deposited in microstructures for thermoelectric microdevices like thermoelectric batteries or thermoelectric sensors.     

Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

Bismuth layer-structured ferroelectric thin films consisting of a stacking of pseudoperovskite and bismuth oxide blocks along the c-axis were epitaxially grown on single-crystal substrates by metalorganic chemical vapor deposition (MOCVD), and a selective reaction of the bismuth oxide layer with HCl was demonstrated. Epitaxial films with contrasting crystal orientations were used for the acid treatment in order to probe chemical anisotropy. For a/b-axis-oriented SrBi₂Ta₂O₉, Bi₄Ti₃O₁₂, and SrBi₄Ti₄O₁₅ films with sequential stacking of the two vertical blocks, notable structural selectivity of the reaction was observed only for SrBi₂Ta₂O₉. For this film, the pseudoperovskite block remained and the bismuth oxide block was removed, while both blocks of Bi₄Ti₃O₁₂ and SrBi₄Ti₄O₁₅ dissolved into the acid. In addition to the bismuth, the other cations in the pseudoperovskite blocks, strontium and titanium, also decreased for Bi₄Ti₃O₁₂ and SrBi₄Ti₄O₁₅. The selective reaction observed for a/b-axis-oriented SrBi₂Ta₂O₉, however, was not observed for c-axis-oriented SrBi₂Ta₂O₉ films in which the pseudoperovskite and bismuth oxide blocks were stacked horizontally. The results clearly show that SrBi₂Ta₂O₉ has sub-nano-order structural selectivity and chemical anisotropy in the unit cell in the reaction with HCl.     

Synthesis,crystal structure and properties of a quaternary oxide with a new structure type,BiGaTi4O11

A new quaternary oxide, BiGaTi₄O₁₁ (bismuth gallium tetratitanium undecaoxide), was prepared by heating a mixture of the binary oxides at 1373 K in air. BiGaTi₄O₁₁ melts at 1487 K and prismatic single crystals were obtained from a sample melted at 1523 K and solidified by furnace cooling. The structure of BiGaTi₄O₁₁ was analyzed using single‐crystal X‐ray diffraction to be of a new type that crystallized in the space group Cmcm. A Bi³⁺ site is coordinated by nine O^2? anions, and three oxygen‐coordinated octahedral sites are statistically occupied by Ga³⁺ and Ti⁴⁺ cations. A relative dielectric constant of 46 with a temperature coefficient of 57 ppm K^?1 in the temperature range 297–448 K was measured for a polycrystalline ceramic sample at 150 Hz–1 MHz with a dielectric loss tan δ of less than 0.01. Electrical resistivities measured at 1073 K by alternating‐current impedance spectroscopic and direct‐current methods were 1.16 × 10^?4 and 1.14 × 10^?4 S cm^?1, respectively, which indicates that electrons and/or holes were conduction carriers at high temperature. The optical band gap estimated by the results of diffuse reflectance analysis was 2.9–3.0 eV, while the band gap obtained from the activation energy for electrical conduction was 3.5 eV.     

A new bismuth iron oxyphosphate,Bi6(Bi0.32Fe0.68)(PO4)4O4

Iron was inserted into the known crystal structure of the bismuth phosphate oxide Bi_6.67(PO₄)₄O₄ to ascertain its location in the vacancies associated with the bismuth ion located at the origin of the unit cell. Single‐crystal X‐ray diffraction refinements converged to a model of composition Bi₆(Bi_0.32Fe_0.68)(PO₄)₄O₄ (hexabismuth iron tetraphosphate tetraoxide), in which Bi and Fe are displaced from the origin giving rise to a random distribution over the 2i sites instead of 1a, the origin of space group P. The isotropic displacement parameter for Bi/Fe has a reasonable value in this model. This structure establishes for the first time that Fe substitutes in the Bi‐deficient site in this series of materials and that Fe and Bi are disordered around the center of symmetry. These results enhance understanding of the crystal chemistry of these main group phosphates that are of interest in ion transport.     

Synthese und Kristallstruktur von Bi2ErO4I

Synthesis and Crystal Structure of Bi₂ErO₄I Bi₂ErO₄I was prepared by solid‐state reaction of stoichiometric mixture of BiOI, Bi₂O₃ and Er₂O₃. Bi₂ErO₄I is a new compound and the first bismuth rare earth oxide iodide. The crystal structure was determined by the Rietveldmethod (P4/mmm, a = 3,8896(6) Å, c = 9,554(2) Å, Z = 1). In this structure [M₃O₄]⁺‐layers are interleaved by single I^–‐layers. Er and Bi atoms of Bi₂ErO₄I are 8‐coordinated. The structure can be derived from the LiBi₃O₄Cl₂‐structure type.     

Preparation of (1? x %)(Na0.5Bi0.5)TiO3– x %SrTiO3 thin films by a sol–gel method for dielectric tunable applications

(1−x%)(Na_0.5Bi_0.5)TiO₃–x%SrTiO₃ (NBTSx) thin films were deposited on Pt/TiO₂/SiO₂/Si substrates by a spin-on sol–gel method and rapid thermal annealing. The stock solutions were prepared using sodium acetate, bismuth acetate, strontium acetate, and titanium n-butoxide as precursors, ethanol, and acetic acid as solvents and acetylacetone as the chelating agent. The thermal treatment conditions were determined by thermal analyses of the dry gel powders derived from the stock solutions. Structure and dielectric tunable properties of the films were studied as functions of Sr concentration. NBTSx films exhibit the perovskite structure of a pseudo-cubic symmetry with the lattice parameters increasing with increasing Sr concentration. It was found that the substitution of Sr in Na_0.5Bi_0.5TiO₃ may greatly reduce the dielectric loss while decrease the tunability at the same time. The best figure of merit was achieved in NBTS80 films. The results were discussed and compared with related materials.     

Template‐Free Fabrication of Bi2O3 and (BiO)2CO3 Nanotubes and Their Application in Water Treatment

Uniform bismuth oxide (Bi₂O₃) and bismuth subcarbonate ((BiO)₂CO₃) nanotubes were successfully synthesized by a facile solvothermal method without the need for any surfactants or templates. The synergistic effect of ethylene glycol (EG) and urea played a critical role in the formation of the tubular nanostructures. These Bi₂O₃ and (BiO)₂CO₃ nanotubes exhibited excellent Cr^VI‐removal capacity. Bi₂O₃ nanotubes, with a maximum Cr^VI‐removal capacity of 79 mg g^?1, possessed high removal ability in a wide range of pH values (3–11). Moreover, Bi₂O₃ and (BiO)₂CO₃ nanotubes also displayed highly efficient photocatalytic activity for the degradation of RhB under visible‐light irradiation. This work not only demonstrates a new and facile route for the fabrication of Bi₂O₃ and (BiO)₂CO₃ nanotubes, but also provides new promising adsorbents for the removal of heavy‐metal ions and potential photocatalysts for environmental remediation.     

Valence States of Lead and Bismuth Atoms in the High-Temperature Superconductor BaPb1-xBixO3

X-ray photoelectron spectra of valence bands and core levels of BaPb_0.8Bi_0.2O₃, PbO, PbO₂, BaPbO₃, BaBiO₃, NaBiO₃, and Bi₂O₃ were studied. Comparison of the electron binding energies of the Pb 4f7/2 or Bi 4f7/2 core levels for all the oxides studied showed that the high-temperature oxide superconductor BaPb_0.8Bi_0.2O₃ contains simultaneously two different valence forms of lead atoms (Pb^IV and Pb^II) and two different valence forms of bismuth atoms (Bi^V and BiIII). Parameters of the X-ray photoelectron spectra of the valence bands do not contradict the conclusion on heterovalent states of lead and bismuth atoms in BaPb_0.8Bi_0.2O₃.     

The Effect of pH Values on the Synthesis,Microstructure and Photocatalytic Activity of Ce‐Bi2O3 by a Two‐Step Hydrothermal Method

In this study, the effect of pH values on the microstructure and photocatalytic activity of Ce‐Bi₂O₃ under visible light irradiation was investigated in detail. In alkaline condition (e.g. pH = 9), the as‐prepared Ce‐Bi₂O₃ exhibited an agglomerated status and mesoporous structures without a long‐range order. While in weak acid condition (e.g. pH = 5), the Ce‐Bi₂O₃ exhibited a best morphology with irregular nanosheets. Correspondingly, it possessed largest surface area (24.641 m² g^?1) and pore volume (9.825E‐02 cm³ g^?1). These unique nanosheets can offer an attachment for pollutant molecules and reduce the distance of electron immigration from inner to surface, thus facilitating the separation of photoelectron and hole pairs. Compared with the pure Bi₂O₃, the band gap of Ce‐Bi₂O₃ prepared at different pH was much lower. Among them, the band gap of Ce‐Bi₂O₃ (pH of 5) was lowest (2.61 eV). Ce‐Bi₂O₃ (pH of 5) exhibited as tetragonal crystal with the bismuth oxide in the form of the composites, which could reduce the band gap width or suppress the charge‐carrier recombination, subsequently possessing great photocatalytic activity for acid orange II under visible light irradiation. After 2 h degradation under visible light, the degradation rate of acid Orange II was up to 96.44% by Ce‐Bi₂O₃ prepared at pH 5. Overall, it can be concluded that the pH values had effects on the microstructure and photocatalytic activity of Ce‐Bi₂O₃ catalysts.     

Hydrothermal Synthesis of Bismuth Sulfide (Bi2S3) Nanorods: Bismuth(III) Monosalicylate Precursor in the Presence of Thioglycolic Acid

Well-segregated bismuth sulfide (Bi₂S₃) nanorods with a high order of crystallinity have been successfully prepared from bismuth(III) monosalicylate [BiO(C₇H₅O₃)] by a simple hydrothermal reaction in H₂O at 180 °C. Bismuth(III) monosalicylate and thioglycolic acid act as the starting materials. The products were characterized by powder X-ray diffraction, Ultraviolet–Visible (UV–Vis) spectroscopy, transmission electron microscopy photoluminescence spectroscopy, and Fourier transform infrared spectra. The powder X-ray diffraction pattern shows the product belongs to the orthorhombic Bi₂S₃ phase. Their UV–Vis spectrum shows the absorbance at 328 nm, with its direct energy band gap of 2.6 eV. Bismuth salicylate, which is known to be a complex, may play a critical role as a precursor and a template for the growth of linear bismuth sulfide nanorods. Finally the influences of the reaction conditions are discussed and a possible mechanism for the formation of Bi₂S₃ nanorods is proposed.     

Efficiency of various semiconductor catalysts for photodegradation of Safranin-T

Semiconductor photocatalysis often leads to partial or complete mineralization of organic pollutants. In this study, photocatalytic degradation of Safranin-T, a hazardous textile dye, has been investigated using various semiconductors such as titanium dioxide (TiO₂), zinc oxide (ZnO), bismuth oxide (Bi₂O₃), cerium oxide (CeO₂), yttrium oxide (Y₂O₃), and zirconium oxide (ZrO₂). The experiments were carried out by irradiating the aqueous solution of Safranin-T containing photocatalysts with UV and air. Maximum decolorization of Safranin-T occurred with TiO₂ (99.8%), followed by ZnO (80.3%), Bi₂O₃ (57.1%), CeO₂ (13.1%), Y₂O₃ (12.2%), and ZrO₂ (10.2%). The rate of photocatalytic degradation varied with increasing concentration of Safranin-T. The equilibrium degradation data of Safranin-T by TiO₂ and ZnO were fitted to the Langmuir and Freundlich isotherm models. The Freundlich and Langmuir model showed satisfactory fit to the equilibrium degradation data for TiO₂ and ZnO, respectively. Photocatalytic degradation of Safranin-T followed pseudo second-order kinetics.     

BIFEVOX Composites: Manufacture and Characterization

Design of composites is a way to improve the quality of solid electrolytes. By mechanically mixing and annealing substituted bismuth vanadate with nanosized aluminum, bismuth, and zirconium binary oxides, we obtained heterogeneous materials Bi₄V_1.7Fe_0.3O_{11 – δ}/xAl₂O₃, Bi₄V_1.7Fe_0.3O_{11 – δ}/xBi₂O₃, and Bi₄V_1.7Fe_0.3O_{11 – δ}/xYSZ. The investigation tools were X-ray powder diffraction and electron microscopy with energy-dispersive microanalysis. The composition of materials was studied, the non-interaction of components was elucidated in the aluminum oxide and zirconium oxide composite series, and a nonuniform distribution of nanopowder particles across the surfaces and cleaves of sinters was discovered. The bismuth atoms from bismuth oxide were shown to be capable of incorporating into the Bi₄Fe_0.3V_1.7O_{11 – δ} structure. The charge transport characteristics of the materials were studied by impedance spectroscopy. No changes were observed in logσ–10³/T trends in composites with various binary oxides and various oxide contents. An increase in binary oxide concentration was shown to give rise to an insignificant decay in electrical conductivity.     

Photoresist Modification of Sol–Gel Solutions for Texturing of Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> and Bi<Subscript>3</Subscript>TiNbO<Subscript>9</Subscript> Thin Films

Bismuth titanate (Bi₄Ti₃O₁₂) and bismuth titanium niobate (Bi₃TiNbO₉) c-axis textured thin films were fabricated using the sol–gel processing technique. Chemical modification of precursor solutions was performed using a proprietary photosensitive chemical (photoresist). Increases in crystallinity and texture of resulting films were seen over films that were made from unmodified solutions. Analysis by X-ray diffraction (XRD) revealed c-axis orientation factors for Bi₄Ti₃O₁₂ near 88% and Bi₃TiNbO₉ near 63% in “modified” films. Atomic force microscopy images of films show microstructural improvement between “modified” and “unmodified” films. Images generally show smaller randomly oriented grains in “unmodified” films, and larger oriented platelet structures related to growth due to crystal habit in “modified” films. Light scattering experiments show the addition of photoresist to the precursor solution initiates accelerated particle growth. AFM imaging of soft-baked films also suggests an enhancement of texture.     

Research on the electrochemistry of oxygen ion conductors in the former Soviet Union

Following previous reviews of research results on oxygen ion-conducting materials obtained in the former USSR, this article addresses the case of Bi₂O₃-based compositions. Phase formation in oxide systems with Bi₂O₃, thermal expansion, stability, bulk transport properties and oxygen exchange of bismuth oxide solid electrolytes are briefly discussed. Primary attention is focused on oxides with high ionic and mixed conductivity, including stabilized fluorite-type (δ) and sillenite (γ) phases of Bi₂O₃, γ-Bi₄V₂O₁₁ and other compounds of the aurivillius series. Another major point being addressed is on the applicability of these materials in high-temperature electrochemical cells, which is limited by numerous specific disadvantages of Bi₂O₃-based ceramics. The electrochemical properties of various electrode systems with bismuth oxide electrolytes are also briefly analyzed. Electronic Publication