High strain rate sensitivity of hardness in quinary Ti-Zr-Hf-Cu-Ni high entropy metallic glass thin films

Quinary Ti-Zr-Hf-Cu-Ni high-entropy metallic glass thin films were produced by magnetron sputter deposition. Nanoindentation tests indicate that the deposited film exhibits a relatively large hardness of 10.4±0.6 GPa and a high elastic modulus of 131±11 GPa under the strain rate of 0.5 s⁻¹. Specifically, the strain rate sensitivity of hardness measured for the thin film is 0.05, the highest value reported for metallic glasses so far. Such high strain rate sensitivity of hardness is likely due to the high-entropy effect which stabilizes the amorphous structure with enhanced homogeneity.     

Physical properties of ZnSe thin films deposited on glass and silicon substrates

ZnSe thin films were deposited onto Corning glass and silicon substrates using thermal evaporation. The samples were prepared at different substrate temperatures. The thin films’ surface chemical composition was determined through Auger electron spectroscopy (AES). AES signals corresponding to Zn and Se were only detected in AES spectra. The samples’ crystallographic structure was studied through X-ray diffraction. The material crystallised in the cubic structure with preferential orientation (111). Optical properties of the ZnSe films were studied over two energy ranges via electron energy loss spectroscopy (10–90 eV) and spectral transmittance measurements (0.4–4 eV). In both cases, the spectral variation of the refractive index and the absorption coefficient were determined by fitting the experimental results with well-established theoretical models. Experimental values for the material’s gap were also found, and photoconductivity (PC) measurements were carried out. Transitions between bands, usually labelled Γ^V₈ → Γ^C₆ and Γ^V₇ → Γ^C₆, were found in the optical and PC responses. A wide spectral photoconductive response between 300 and 850 nm was found in the ZnSe/Si samples prepared at 250 °C substrate temperature.     

Effects of cooling rates on the mechanical properties of a Ti-based bulk metallic glass

Mechanical properties of the glassy specimens fabricated at different cooling rates with a composition of Ti40Zr25Cu12Ni3Be20 were systematically investigated. It was confirmed that faster cooling rates caused not only a larger amount of frozen-in free volume but also a higher glass transition temperature in the bulk glassy alloy. Increase in the free volume was found to favor plastic deformation and then to give rise to larger compressive plasticity, whilst the rise in the glass transition temperature seem...     

Effect of spatial heterogeneity on level of rejuvenation in Ni80P20 metallic glass

Understanding the relation between spatial heterogeneity and structural rejuvenation is one of the hottest topics in the field of metallic glasses (MGs). In this work, molecular dynamics (MD) simulation is implemented to discover the effects of initial spatial heterogeneity on the level of rejuvenation in the Ni$_{80}$P$_{20 }$MGs. For this purpose, the samples are prepared with cooling rates of $10^{10}$ K/s-$10^{12}$ K/s to make glassy alloys with different atomic configurations. Firstly, it is found that the increase in the cooling rate leads the Gaussian-type shear modulus distribution to widen, indicating the aggregations in both elastically soft and hard regions. After the primary evaluations, the elastostatic loading is also used to transform structural rejuvenation into the atomic configurations. The results indicate that the sample with intermediate structural heterogeneity prepared with 10$^{11}$ K/s exhibits the maximum structural rejuvenation which is due to the fact that the atomic configuration in an intermediate structure contains more potential sites for generating the maximum atomic rearrangement and loosely packed regions under an external excitation. The features of atomic rearrangement and structural changes under the rejuvenation process are discussed in detail.     

Ge-Sb-Se硫系薄膜制备及光学特性研究

介绍了几种常见的硫系薄膜制备方法, 根据现有实验条件采用热蒸发法和磁控溅射法制备出Ge-Sb-Se三元体系硫系薄膜, 通过台阶仪测试薄膜的厚度和表面粗糙度, 计算出两种制备方法的成膜速率, 并通过X射线光电子能谱测试了两种制备方法所得薄膜与块体靶材组分的差别. 利用Z扫描技术和分光光度计测试了热蒸发法制备所得薄膜的三阶非线性性能和透过光谱, 计算出非线性折射率、非线性吸收系数和薄膜厚度等参数. 结果表明热蒸发法制备Ge-Sb-Se薄膜具有良好的物理结构和光学特性, 在集成光学器件方面很高的应用潜力.     

Applications of laser for ceramic alloying on metallic surfaces

Summary Ceramic and metallic materials were alloyed and cladded on a C40 steel by means of a CO₂ laser heat source. The main objectives of the research were to obtain a surface modification of the C40 steel in order to increase its wear resistance and to develop a repeatable coating process of potential industrial application. In the following sections, the laser coating process (including experimental equipment and working parameters) and the most important metallurgical results are described.     

High‐mobility solution‐processed zinc oxide thin films on silicon nitride

A high effective electron mobility of 33 cm² V^–1 s^–1 was achieved in solution‐processed undoped zinc oxide (ZnO) thin films. The introduction of silicon nitride (Si₃N₄) as growth substrate resulted in a mobility improvement by a factor of 2.5 with respect to the commonly used silicon oxide (SiO₂). The solution‐processed ZnO thin films grown on Si₃N₄, prepared by low‐pressure chemical vapor deposition, revealed bigger grain sizes, lower strain and better crystalline quality in comparison to the films grown on thermal SiO₂. These results show that the nucleation and growth mechanisms of solution‐processed films are substrate dependent and affect the final film structure accordingly. The substantial difference in electron mobilities suggests that, in addition to the grain morphology and crystalline structure effects, defect chemistry is a contributing factor that also depends on the particular substrate. In this respect, interface trap densities measured in high‐κ HfO₂/ZnO MOSCAPs were about ten times lower in those fabricated on Si₃N₄ substrates. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

     

A glass thinning and texturing method for light incoupling in thin‐film polycrystalline silicon solar cells application

For polycrystalline silicon (poly‐Si) thin‐film solar cells on ～3 mm borosilicate glass, glass thinning reduces the glass absorption and light leaking to neighbouring cells; the glass texturing of the sun‐facing side suppresses reflection. In this Letter, a labour‐free wet etching method is developed to texture and thin the glass at the same time in contrast to conventionally separated labour‐intensive glass thinning and texturing processes. For 2 cm² size poly‐Si thin‐film solar cells on glass superstrate, this wet etching successfully thins down the glass from 3 mm to 0.5 mm to check the ultimate benefit of the process and introduces a large micron texture on the sun‐facing glass surface. The process enhances J_sc by 6.3% on average, with the optimal J_sc enhancement of 8%, better than the value of 4.6% found in the literature. This process also reduces the loss in external quantum efficiency (EQE loss), which is due to light leaking to neighbouring cells, dramatically. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Columnar growth of crystalline silicon films on aluminium-coated glass by inductively coupled plasma CVD at room temperature

Silicon films were grown on aluminium-coated glass by inductively coupled plasma CVD at room temperature using a mixture of SiH₄ and H₂ as the source gas. The microstructure of the films was evaluated using Raman spectroscopy, scanning electron microscopy and atomic force microscopy. It was found that the films are composed of columnar grains and their surfaces show a random and uniform distribution of silicon nanocones. Such a microstructure is highly advantageous to the application of the films in solar cells and electron emission devices. Field electron emission measurement of the films demonstrated that the threshold field strength is as low as ～9.8V/μm and the electron emission characteristic is reproducible. In addition, a mechanism is suggested for the columnar growth of crystalline silicon films on aluminium-coated glass at room temperature.     

Influence of Zr_(50)Cu_(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.     

Abnormal residual stress in nanostructured Al thin films grown on Ti/glass substrates

The residual stress and micro-structural properties of nanostructured Al thin films prepared by electron beam evaporator are studied. The films were grown on Ti/glass substrates at normal and oblique angles of inclination. The average aspect ratio of Al nanorods produced at an oblique angle of incidence of 85°, increased from 2.2 to 6.0, as the thickness of the films increased from 100 nm to 600 nm. The column tilt angle of Al nanorods was observed to be in close agreement with the theoretical value. The XRD pattern of nanostructured Al thin films showed (111) planes oriented parallel to the substrate surface. The crystallite size was observed to be ～9 nm for all the films produced at oblique angle deposition (OAD). Abnormal residual stresses were determined in the films produced at OAD. The nanocrystalline films produced at normal angle, exhibited tensile residual stress, while, the residual stresses in the films produced at oblique angles of inclination (α = 65°, 75°), were observed to be compressive. Residual stress-free nanocolumnar Al films (Al nanorod films) were observed, when they were grown at an oblique angle of inclination of 85°.     

氢稀释对高速生长纳米晶硅薄膜晶化特性的影响

以SiH₄与H₂为气源,采用射频等离子体增强化学气相沉积技术,在较高的压强(230Pa)下,研究氢稀释率对纳米晶硅薄膜的生长速率和晶化特性的影响. 实验表明,薄膜的晶化率,晶粒尺寸随着氢稀释率的提高而增加,当氢稀释率为99%,薄膜的晶化率接近70%. 而沉积速率却随着氢稀释率的减小而增加,当氢稀释率从99%减小到95%时,薄膜的沉积速率由0.3nm/s 增加至0.8nm/s. 关键词： 纳米晶硅薄膜 氢稀释 晶化率 硅烷     

Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.     

Thin film bilayers of multiferroic bismuth ferrite on Pt–Si substrate

A multiferroics/multiferroics BiFeO₃/Bi_0.90La_0.10Fe_0.90Zn_0.10O₃ (BFO/BLFZO) bilayer was deposited on Pt/TiO₂/SiO₂/Si substrates by radio frequency sputtering. The BLFZO layer strongly affects the phase purity, orientation growth, and leakage current of BFO layer. The bilayered capacitor exhibits a high dielectric permittivity of ～162 and an improved magnetic behavior of 2M_s ～ 34.6 emu/cm³, together with an excellent fatigue endurance. A remanent polarization of 2P_r ～ 116.2 μC/cm² for the bilayered capacitor is better than those of reported BFO bilayers. The impedance study indicates that lower freely mobile charges are responsible for the improved electrical behavior of the BFO/BLFZO bilayer. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of polarity inversion on the electrical properties of Ga‐doped ZnO thin films

This study investigates how polarity inversion influences the relationship between the electrical properties of heavily Ga‐doped ZnO (GZO) films deposited by RF magnetron sputtering and their thickness. The electrical properties observed in very thin films are correlated with a change of polarity from O‐polar to Zn‐polar face upon increasing the film thickness based on results of valence band spectra measured by X‐ray photoelectron spectroscopy. It is found that the electrical properties of very thin GZO films deposited on Zn‐polar ZnO templates are significantly improved compared to those deposited on O‐polar face. A low resistivity of 2.62 × 10^–4 Ω cm, high Hall mobility of 26.9 cm²/V s, and high carrier concentration of 8.87 × 10²⁰ cm^–3 being achieved with 30 nm‐thick GZO films using Zn‐polar ZnO templates on a glass substrate. In contrast, the resistivity of 30 nm‐thick GZO films on bare glass that shows more likely O‐polar is very poor about 1.44 × 10^–3 Ω cm with mobility and carrier concentration are only 11.9 cm²/V s and 3.64 × 10²⁰ cm^–3, respectively. It is therefore proposed that polarity inversion plays an important role in determining the electrical properties of extremely thin GZO films. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Highly reflective subtractive color filters capitalizing on a silicon metasurface integrated with nanostructured aluminum mirrors

Metasurface‐based color filters have been recently applied for the creation of imaging devices and color printing in a subwavelength scale. In this work, a highly reflective subtractive color filter featuring an excellent color contrast is conceived and demonstrated, by exploiting a crystalline‐silicon nanopillar (NP)‐based dielectric metasurface integrated with an aluminum disk mirror (DM) and holey mirror (HM) at the top and bottom, respectively. A deep suppression in reflection is acquired through a magnetic dipole (MD) resonance that is supported by the constituent NP, and can be effectively tailored via the control of the NP diameter. The cooperation of the nanostructured DM and HM plays a dual role of dramatically boosting the efficiency and reinforcing the confinement of the MD in the NP, which is primarily accountable for the reduction in the spectral bandwidth. For the manufactured filters, both a high reflection efficiency reaching ∼70% and relatively small bandwidth of ∼55 nm are attained, thus leading to a broad palette of vivid and bright colors. The proposed devices are supposed to exhibit a polarization‐insensitive operation and a relaxed angular tolerance, thereby facilitating the implementation of miniaturized display/imaging devices with a high resolution and excellent color fidelity.

     

Effect of cationic precursor pH on optical and transport properties of SILAR deposited nano crystalline PbS thin films

The lead sulfide (PbS) thin films were deposited on glass substrate using successive ionic layer adsorption and reaction (SILAR) method at different pH of the cationic precursor, keeping the pH of the anionic precursor invariant. In this work, we establish that the pH of the cationic precursor and in turn the size of the crystallites affects the optical and electrical properties of PbS thin films. The characterization of the film was carried out using X-ray diffraction, scanning electron microscopy, optical and electrical measurement techniques. The presence of nanocrystallites was revealed by optical absorption and structural measurements. The PbS thin films obtained under optimal deposition conditions were found to be polycrystalline with face centered cubic structure. The lattice parameter, grain size, micro strain, average internal stress and dislocation density in the film were calculated and correlated with pH of the solution. The values of average crystallite size were found to be in the range 16-23 nm. Optical studies revealed the existence of direct and indirect band gap values in the range 0.99-1.84 eV and 0.60-0.92 eV, respectively. The room temperature resistivity of the synthesized PbS films was in the range of 1.2 × 10⁷ to 3.5 × 10⁷ Ω cm.     

On the characterization of sculptured columnar Mn thin films; correlation between nanostructure and the optical and electrical properties using experimental and simulation results

Mn columnar (nanorod shaped) thin films of 40 and 150?nm thicknesses were deposited on glass substrates at different deposition angles, using oblique angle deposition technique. The concept of local homogenization proposed by Bruggeman is used for optical analyses of these samples. Results of this simulation method are compared with the experimental data and values for void fraction and film thickness are predicted. In addition, using the perturbation simulation method, variation of relative resistance of these thin films was obtained as a function of material inclusion. It is observed that both simulation and experimental results show that the thinnest samples with the least amount of material inclusion have the highest electrical resistance. Results showed a rise at about 30° deposition angle, which may be attributed to the surface diffusion effect or thermal vibration causing rearrangement of atoms as well as crystallographic available sites for relaxation of adatoms deposited at this certain direction, though this requires a thorough investigation.     

n型有序多孔硅基氧化钨室温气敏性能研究

利用电化学腐蚀方法制备了n型有序多孔硅, 并以此为基底用直流磁控溅射法在其表面溅射不同厚度的氧化钨薄膜. 利用X射线和扫描电子显微镜表征了材料的成分和结构, 结果表明, 多孔硅的孔呈柱形有序分布, 溅射10 min的WO₃薄膜是多晶结构, 比较松散地覆盖在整个多孔硅的表面. 分别测试了多孔硅和多孔硅基氧化钨在室温条件下对二氧化氮的气敏性能, 结果表明, 相对于多孔硅, 多孔硅基氧化钨薄膜对二氧化氮的气敏性能显著提高. 对多孔硅基氧化钨复合结构的气敏机理分析认为, 多孔硅和氧化钨薄膜复合形成的异质结对良好的气敏性能起到主要作用, 氧化钨薄膜表面出现了反型层引起了气敏响应时电阻的异常变化. 关键词： 有序多孔硅 氧化钨薄膜 二氧化氮 室温气敏性能     

Unusual crystal structure of non-superconducting Y1Ba2Cu3O7−x films on buffered silicon substrates

Superconducting common c-axis oriented YBCO films as well as non-superconducting films epitaxially grown at significantly reduced substrate temperatures were deposited by laser ablation on CeO₂/YSZ buffered silicon substrates. The crystal structure of the non-superconducting films measured by XRD is collapsed from the original orthorhombic one, whereas the chemical composition detected using RBS and EDX remains identical. Especially the oxygen content in the non-superconducting material is as high as in the common 90 K superconductor. Thus, the change in the electrical behaviour is only due to a structural modification. The crystallographic model of a simple cubic YBCO perovskite unit cell does not represent completely our experimental results measured on the non-superconducting YBCO. A modified model based on detailed TEM and XRD measurements and known crystal defects of orthorhombic YBCO is proposed.