Shubnikov-de Haas effect and effective mass inn-InP in dependence on carrier concentration

Shubnikov-de Haas investigations onn-InP are presented and the effective mass as a function of carrier concentration is determined. The experiments are carried out with bulk and liquid phase epitactically grown material and carrier concentrations betweenn=10¹⁷ and 10¹⁹cm^–3. Temperatures employed ranged fromT=2 to 77 K and magnetic fields were applied up toB=22 T. Supplementing Kane's theory by introducing both temperature and electron concentration dependence, the nonparabolicity of the effective mass for temperatures betweenT=0 K and 300 K is calculated. The result fits quite well to the experimental results.Dedicated to Prof. Dr. Günter Lautz on the occasion of his 70th birthday     

Quantum oscillations and the Sermi surface of LuB12

To examine the Fermi surface of LuB₁₂, measurements of the de Haas-van Alphen (dHvA) effect were made at temperatures between 0.35 and 2 K in magnetic fields up to 12 Tesla. Oscillations in the susceptibility occurred above 5 Tesla in any field direction relative to the single crystal sample. From the Fourier transform of the data obtained, we conclude the Fermi surface of both conduction bands to have multiple extremal cross sections. For some of these orbits, the temperature dependence of the dHvA signal was investigated to determine the corresponding cyclotron mass. For a better understanding, a Full Potential Linearized Augmented Plane Wave-(FLAPW-) band structure calculation was carried out and the shapes of the Fermi surfaces were determined. In addition, we investigated the transverse magnetoresistance as a function of the field and the field direction. Its anisotropy, as well as the Shubnikov-de Haas (SdH) oscillations occurring in certain geometries, are in agreement with the results of the dHvA measurements.     

Characterisation of the Fermi surface and phase transitions of (BEDO-TTF)2 ReO4·(H2O) by physical property measurements and electronic band structure calculations

The electronic properties of the organic superconductor (BEDO-TTF)₂ ReO₄·(H₂O) were investigated by temperature dependent resistivity, ESR, Hall effect and magnetoresistance measurements. Shubnikov-de Haas (SdH) oscillations were observed in magnetic fields up to 24 T in the temperature range 0.5 K to 4.2 K. The electronic band structure of (BEDO-TTF)₂ ReO₄·(H₂O) was calculated by employing the extended Hückel tight binding method on the basis of its room temperature crystal structure. The two observed SdH frequencies of 75 T and 37 T correspond very well with two cross-sectional areas of the hole and electron Fermi surface pockets obtained from the tight binding calculation. From the temperature dependence of the SdH oscillation amplitudes, the cyclotron effective mass (m_c) belonging to the larger and smaller pockets were found to be 0.9 m₀ and m_c=1.15 m₀ respectively. Measurements of the angular dependence of the SdH frequencies show no deviation from that expected for a cylindrical Fermi surface. In terms of our tight binding calculations and experimental measurements, probable causes for the 213 K and 35 K phase transitions are discussed. The calculations show that (BEDO-TTF)₂ ReO₄·(H₂O) is a two dimensional semimetal but possesses a hidden nesting. The latter is likely to cause an SDW instability leading to the 35 K transition. The resistivity drop associated with the 213 K transition is likely to be induced by an abrupt increase in the relaxation time. The excellent agreement between the calculated and experimentally observed Fermi surface implies that, with decreasing temperature below 35 K, (BEDO-TTF)₂ ReO₄·(H₂O) gradually gets out of the SDW state and re-enters the original metallic state, in which it becomes superconducting below 2.4 K.Reported at the 13th Genral Conference of the Condensed Matter Division of the European Physical Society, Regensburg, March 1993     

Mapping the fermi surface of graphite with a display-type photoelectron spectrometer

A display spectrometer is used to image the momentum distribution of photoelectrons from the Fermi level in graphite. The Fermi surface consists of six points at the corners K of the hexagonal, two-dimensional Brillouin zone, in agreement with band theory. The method is also applied to other equal energy surfaces below the Fermi level, thereby giving the band dispersion of the -bands.     

Global energy spectra of bands and density of states in a class of two-tile systems

Electronic properties of a general class of one-dimensional two-tile systems are calculated exactly. The systems containing periodic crystals, generalized Fibonacci quasicrystals, generalized Thue-Morse aperiodic lattices and even other two-tile aperiodic lattices, can be divided into two different families which are constructed by the inflation rules: {A, B}{A ^m11 B ^m12,A ^m21 B ^m22} and {A, B}{A ⁿ¹¹ B ⁿ¹²,B ⁿ²¹ A ⁿ²²}, respectively. As typical examples, global spectra of bands and density of states in some two-tile aperiodic systems are numerically calculated. Some interesting properties are obtained.     

Diamagnetic phase transition and phase diagrams in beryllium

The model of diamagnetic phase transition in beryllium which takes into account the quasi 2-dimensional shape of the Fermi surface of beryllium is proposed. It explains correctly the recent experimental data on observation of non-homogeneous phase in beryllium at the conditions of strong dHvA effect when the strong correlation of electron gas results in instability of homogeneous phase and formation of Condon domain structure.     

Electronic band gap of SrSe at high pressure

The electronic band gap of SrSe, in the CsCl-stuctured phase, was measured to 42 GPa via optical absorption studies. The indirect electronic band gap was found to close monotonically with pressure for the range of pressures studied. The change in band gap with respect to pressure, dE_gap/dP, was determined to be −6.1(5)×10⁻³ eV/GPa. By extrapolation of our line fit, we estimate band gap closure to occur at 180(20) GPa.     

De Haas-van Alphen effect in the organic superconductor κ-(BEDT-TTF)2I3

In the two-dimensional organic superconductor -(BEDT-TTF)₂I₃ de Haas-van Alphen oscillations were observed at magnetic fields above 5 T and temperatures between 0.4 and 2 K. We found two dHvA frequencies at 3.846 kT and 0.570 kT, which correspond to the cross-sectional areas of the Fermi surface expected from a tight-binding calculation. From the temperature dependence of the oscillation amplitudes the effective mass belonging to the larger orbit was found to be 3.80m_o. Precise measurements of the angular dependence of the dHvA frequency show no deviation from that expected for a cylindrical Fermi surface. The angular dependence of the amplitude including spin splitting zeroes can essentially be described by a two-dimensional Fermi surface. Certain systematical deviations, however, hint for a slight corrugation.     

de Haas-van Alphen effect in the superconducting state of YNi2B2C

To examine the Fermi surfaces of the recently discovered quaternery compounds RENi₂B₂C measurements of the de Haas-van Alphen (dHvA) effect were made on YNi₂B₂C single crystals in magnetic fields up to 12 T. ForBc we observe two dHvA frequenciesF ₁=0.499 kT andF ₂=6.933 kT which corresponds to approximately 1,5% and 21% of the Brillouin zone cross section area. Both frequencies could be observed deep in the vortex state of the type-II superconductor, the lower dHvA frequency down to 2 T corresponding to roughly 1/5 of the upper critical fieldB _c2 which was found to be 10.6 T in resistivity measurements. The field dependent quasiparticle damping in the superconducting state is very weak, since the amplitude of the dHvA oscillations seems to be unaffected by the phase transition atB _c2.     

Fermi surface of LaAg

Electronic structure, especially the Fermi surface, is calculated for the intermetallic rare-earth compound LaAg, known to show the structural phase transition when In is substituted for Ag, by a self-consistent fully-relativistic APW method with the exchange-correlation potential in a local-density approximation. The Fermi surface is found to consist of large hole and electron sheets as well as small hole and electron sheets. This result confirms well the theoretical prediction by Niksch et al. (1987). These Fermi surface sheets are found to explain the experimental results for the de Haas-van Alphen effect by Niksch et al. (1987) and Motoki et al. (1995) reasonably well. But, the frequency branches originating from the large hole sheet have been observed only partially. Local curvature of the large hole sheet is investigated as a possible origin of the disappearance of these frequency branches.     

Orientational correlations and order in A3C60

A tight-binding method which has been previously applied to study the effect of uncorrelated orientational disorder on conduction-band properties is extended here to the case of systems with long-range order and/or short-range correlations. The density of states and conductivity are not highly sensitive to the specific short-range correlations, so long as the system is not too close to being fully ordered. Hence the strong effects of disorder found previously appear to be robust and should play an important role in the interpretation of normal-state properties of A₃C₆₀.     

A new spin effect in photoemission with unpolarized light: Experimental evidence of spin polarized electrons in normal emission from Pt(111) and Au(111)

Unpolarized light ejects spin polarized electrons from Pt(111) and Au(111) even if the electron emission occurs normal to the surface. For off normal incidence of 11.8 eV, 16.9 eV, and 21.2 eV radiation, and for the main peaks in the photoemission spectra, a degree of spin polarization of up to 30% or more is found for the spin polarization component P _y perpendicular to the reaction plane. A crystal rotation about its surface normal does not change P _y . P _y is largest for transitions from bands with symmetry ₆ ³ . All these experimental findings agree with a recent theoretical prediction [1] of a new spin effect by Tamura and Feder.     

Potential of Si1−xGex alloys for Auger generation in highly efficient solar cells

Recent investigation on Si solar cells demonstrated the utility of Auger generation for the creation of more than merely one electron/hole pair per absorbed photon. The semiconductor Si requires a minimum photon energy of about 3.4 eV for this internal carrier multiplication. The current of a Si cell is therefore not significantly increased by Auger generation when the cell is illuminated by an air mass 1.5 spectrum, which contains only few photons with energies above 3.4 eV. Use of Si_1–x Ge _x alloys promises a lower onset energy. Unfortunately, incomplete data on band structures ofrandom Si_1–x Ge _x alloys preclude a detailed quantitative discussion of the full potential for these materials. Nevertheless, (i) analogies to our own quantum efficiency data from pure Si, (ii) the calculated band structure of the hypothetical,ordered zincblende type Si_0.5Ge_0.5 crystal, and (iii) optical data for Si_1–x Ge _x alloys indicate an optimum Ge content ofx=0.6 tox=0.7.     

Angle-resolved photoemission experiments on Bi2Sr2CaCu2O8+δ(001)

Core-level X-ray photoelectron-diffraction patterns have been measured from cleaved Bi₂Sr₂CaCu₂O₈₊ (001) surfaces for all elements present in this compound. The incommensurate modulation alongb ([010]) leads to a strong inequivalence ofa- andb-directions for Bi, Sr and Cu photoelectrons, while Ca and O emission show less effect. Ultraviolet-photoemission experiments recording the emission intensity at the Fermi energy over a large solid angle are also presented, providing a direct mapping of the Fermi surface. Ac(2×2) superstructure is observed on the Fermi surface suggesting antiferromagnetic correlations within the Cu–O planes. The effects of the lattice modulation are clearly observable at the Fermi energy, and they are enhanced for binding energies higher than a few tens of meV.     

Spatial distribution of magnetic field and persistent currents in Condon domain phase

The distributions of magnetic field above the surface of the sample due to existence of the diamagnetic domain structure are found. It is shown, that the constant magnetic induction splitting inside of a sample is caused by the magnetization current density, localised in the boundaries between adjacent domains, close to the sample surface. The properties of this current are studied. The influence of the domain wall thickness on the spatial distribution of magnetic field and magnetization current density is present. A possibility of detection of the changes in the magnetic field distribution in vacuum, close to the surface of the sample, by means of Hall probes, is discussed. The measurement of the spatial distribution of magnetic field can give lacking information about characteristic sizes of magnetic domain formation at the conditions of the strong de Haas van Alphen effect.     

Characterization of X-ray photo- and inverse photoelectron spectra of orthorhombic III–VII compounds in terms of norm-conserving pseudopotential calculation: Application to TII

Energy distribution curves for occupied and virtual states in orthorhombic thallium iodide through angle-integrated photoelectron spectroscopy are compared with the result of the total density of states calculation performed without any fitting parameters. The main spectral features are analyzed via charge density maps and generalized for other compounds of the TII-type structure.     

A new doping superlattice photodetector

A new GaAs photodetector with high sensitivity in the whole 0.8–1.4m wavelength range has been fabricated from totally depleted GaAs doping superlattices grown by molecular beam epitaxy. Photoexcited electrons and holes are separated in real space by the space-charge field of the doping superlattice immediately after excitation, yielding a high quantum efficiency of this device. Because of the complete depletion, the doping superlattice behaves like a highly resistive material, which allows application of high electric field along the layers via selectiven ⁺ — andp ⁺ -electrodes. The sensitivity of this device at 1.3 m reaches more than 90% of the original band edge response at 0.85 m, and the external quantum efficiency amounts to 65% at 0.85 m. This excellent photoresponse at longer wavelengths arises from an extremely high electric field composed of the intrinsic space charge field and applied external field, and from the existence of pronounced tail states in the forbidden gap region of the superlattice.     

Contribution ofd-like states to magnesium,aluminium and phosphorusL-emission bands of MgO,Al2O3 and AlPO4

We have measured the MgL-, AlL- and PL-emission bands of MgO, -Al₂O₃ and AlPO₄, respectively. For MgO and Al₂O₃ the electronic structure and the X-ray emission bands have been calculated. In spite of different crystal structure and chemical composition of these compounds the cationL-emission bands are very similar. We have found that for the interpretation of theL-emission bands of these compounds the cation 3d-like electrons are crucial.     

Resonant magnetopolaron effects in parabolic quantum wells in a tilted magnetic field

We study the resonant magnetopolaron effects in parabolic quantum wells in a tilted magnetic field. The renormalization of the first excited level, which is resonant with the ground state level plus one longitudinal-optical phonon is calculated at the resonance using an improved resonance approximation to be E= where is the polaron coupling constant. The exponent and the factor are calculated in dependence on the tilt angle of the magnetic field and the confinement energy.