Energy Levels in the Forbidden Band of the Bi4Ge3O12 Ceramics

Thermally stimulated luminescence in the Bi₄Ge₃O₁₂ ceramics and also in the ceramics of the parent components Bi₂O₃ and GeO₂ is investigated. The similarity of the curves of the thermally stimulated luminescence in bismuth germanate with the structure of eulytine Bi₄Ge₃O₁₂ and sillenite Bi₁₂GeO₂₀ is explained. The relation of the thermally stimulated luminescence band in Bi₄Ge₃O₁₂ (with a maximum at 143 K) to the disruptions in the germanium sublattice and of the thermally stimulated band (with a maximum at 187 K) to the recombination processes in the bismuth sublattice is shown. It has been established that the light sum in the Bi₄Ge₃O₁₂ ceramics is stored most effectively upon excitation by light in an energy region of 4.4 eV.     

Characteristic of natural rubber composites absorbing X-radiation

Radiopaque polymers can be used in medicine. Conventional protective shields against radiation X contain harmful lead compounds that are heavy and fragile. The aim of this work was to study the check the properties of selected fillers as X-radiation absorbing substance and them use in natural rubber (NR) composites. Fillers and simultaneously active substances were bismuth (III) oxide (Bi₂O₃), gadolinium (III) oxide (Gd₂O₃), tungsten (III) oxide (WO₃) and antimony (III) oxide (Sb₂O₃). The polymeric matrix consisted of NR and sulfuric cross-linking system was applied. The properties of the fillers were determined from zeta potential and particle size measurements. X-ray absorption measurements were carried out using isotopic source ⁵⁷Co (122?keV). The mechanical properties of the thin 1?mm composite plates were examined.     

非晶钛酸铋的晶化过程

利用差热分析、X射线衍射和透射电子显微镜等技术对溶胶-凝胶法合成的凝胶的晶化过程进行了分析，实验结果表明，Bi₄Ti₃O₁₂非晶凝胶晶化过程经历了四个过程：首先在433℃先形成了Bi₂O₃和TiO₂亚稳相，然后在488℃时TiO₂亚稳相与Bi₂O₃反应形成Bi，Ti复合氧化物亚稳相Bi₂T 关键词： 钛酸铋 铁电材料 溶胶凝胶 非晶 晶化过程     

Evolution of phase purity and texture on annealing of BiFeO3 thin film prepared by sol-gel technique

We report preparation of phase pure BiFeO₃ thin films on glass, ITO and Si(100) substrates through chemical route using spin coating technique. Sol-gel process was adopted to prepare the films using bismuth nitrate and iron nitrate as precursors. X-Ray diffraction and Raman spectroscopy studies revealed amorphous nature of the as deposited films. Rhombohedral crystalline phase of BiFeO₃ evolved on annealing the films at 500°C, but with Bi₂Fe₄O₉ and Bi₂₄Fe₂O₃₉ as impurity phases. Increasing the annealing temperature to 550°C caused a drastic reduction of the impurity phases and at 600°C, the films were phase-pure BiFeO₃. Micro Raman spectra showed features consistent with the reported characteristic peaks of BiFeO₃ crystalline phase for films annealed at 500 and 550°C. Crystallite size obtained from X-ray diffraction line width analysis are within 30 to 40 nm. Atomic force microscopy (AFM) however showed grain size of ∼192 nm, indicating polycrystalline nature of the grains.      

Luminescence of Thin Bismuth Germanate Films Having the Structure of Eulitine and Benitoite

The luminescence and luminescence excitation spectra of thin films of Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ were investigated. The spectra were decomposed into elementary components by the Alentsev-Fok method. It has been established that the luminescence spectra of thin Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ films have a similar structure and that each contains three luminescence bands with maxima at 2.70, 2.40, and 2.05 eV and at 2.73, 2.40, and 1.95 eV, respectively. Comparison of the results obtained with the well-known results of investigation of the luminescence of Bi₁₂GeO₂₀ and Bi₂O₃ suggests that the luminescence in the compounds considered is caused by the radiation processes that proceed in structural complexes of similar configuration that contain the bismuth ion in the nearest oxygen environment. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 377–380, May–June, 2005.     

Lanthanum-doped Bi4Ti3O12 ceramics prepared by high-pressure technique

We present an effective way in this paper to increase the density of lanthanum doped bismuth titanate ceramics, Bi4-xLaxTi3O12 (BLT), thereby significantly improving the performance of the BLT ceramics. Dense BLT ceramicses, Bi4-xLaxTi3O12 (x = 0.25, 0.5, 0.75, 1.0), are prepared by using nanocrystalline powders fabricated by a-gel method and high-pressure technique. The microstructures of the BLT ceramicses prepared separately by conventional-pressure and high-pressure techniques are investigated by using x-ray diffraction and transmission electron microscope. The influence of La-doping on the densification of bismuth titanate ceramics is investigated. The experimental results indicate that the phase compositions of all samples with various lanthanum dopings sintered at 900°C possess layer-structure of Bi4Ti3O12 . The green compacts are pressed under 2.5 GPa, 3.0 GPa, 3.5 GPa and 4.0 GPa, separately. It is found that the density of BLT ceramics is significantly increased due to the decreasing of porosity in the green compacts by high-pressure process.     

Raman scattering and X‐ray diffraction on YBiTi2O7 prepared at low temperature

The conditions of preparation of a pure YBiTi₂O₇ phase by sol–gel were optimised. A single phase was obtained at temperature as low as 800 °C when triethanolamine/diethanolamine was used as additional ligands. The expected composition was confirmed by energy dispersive spectroscopy (EDS) and X‐ray diffraction (XRD). YBiTi₂O₇ exhibits the pyrochlore structure with a unit‐cell parameter of 10.2117(5) Å. This structure was confirmed by Raman spectroscopy, which revealed a shift of the main E_g mode towards lower wavenumbers when bismuth is introduced in the structure. Broad bands were observed for all the recorded spectra, which characterise rather a disorder due to bismuth III cations in the structure than an effect of particle size. This study confirmed the possibility to lower the temperature of preparation of pyrochlores containing bismuth, which could be of interest as photocatalyst for the decomposition of organic and toxic materials. Copyright © 2008 John Wiley & Sons, Ltd.     

Effects of surface-modification with Bi2O3 on the thermal stability and photoinduced charge property of nanocrystalline anatase TiO2 and its enhanced photocatalytic activity

Bi₂O₃ surface-modified TiO₂ nanoparticle has been synthesized by sol-hydrothermal processes, followed by post-treatment with an appropriate amount of bismuth nitrate solution, and also characterized by XRD, Raman, BET, TEM, FT-IR, XPS, UV-vis DRS and SPS techniques. The effects of the surface-modification with Bi₂O₃ on the thermal stability, photoinduced charge separation and photocatalytic activity for degrading rhodamine B (or phenol) under ultraviolet (or visible) irradiation are investigated in detail, along with their relationships and the activity enhancement mechanisms are also suggested. The results show that the modification with Bi₂O₃ can improve the thermal stability of the as-prepared anatase crystallites, consequently enhancing the anatase crystallinity so as to promote the photoinduced charge separation. And the modification with Bi₂O₃ also extends the optical response range. It can be concluded that the activity enhancement of surface-modified TiO₂ is mainly attributed to the increase in the photoinduced charge separation rate and to the extent of the optical response range, compared with un-modified ones. Moreover, the inhibition phase transformation mechanism related to Bi₂O₃ is suggested.     

Ferroelectric and dielectric properties of La/Mn co-doped Bi4Ti3O12 ceramics

La/Mn co-doped Bi4Ti3O12 ceramics,Bi3.25La0.75Ti3-xMnxO12(x=0.02,0.04,0.06,0.08),were prepared by the solid-state reaction method.The influence of manganese substitution for the titanium part in Bi 3.25 La 0.75 Ti 3 O 12 on the sintering behaviour,microstructure,Raman spectra and electrical properties was investigated.The experimental results show that the phase composition of all samples with and without manganese doping,sintered at 1000 ℃,consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12.There is no evidence of any impurity phase,but a small change in crystallographic orientation is observed.The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content.Moreover,the remnant polarisation(Pr) of Bi3.25La0.75Ti2.92Mn0.08O12 samples increases with Mn-doping content,and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest P r of 16.6 μC/cm 2.     

Availability of water glass/Bi2O3 composites in dielectric and gamma-ray screening applications

ABSTRACT

Sodium silicate (Na₂Si₃O₇) also known as water glass is a very low cost material which is used in many industrial applications such as a builder in detergents, as a binder and adhesive etc. But so far the electrical properties of sodium silicate and its ability to screen radiation have never been investigated. In the present study, the frequency dependent electrical properties and gamma-ray shielding performance of water glass based bismuth oxide composites have been studied for the first time. In accordance with this purpose, Na₂Si₃O₇/Bi₂O₃ glassy composites have been prepared for searching their possible applications in electronics and radiation screening. The surface morphology of the samples have been determined by Scanning Electron Microscope (SEM). The frequency dependent electrical properties such as complex impedance, complex dielectric function and conductivity have been analyzed at room temperature between 1 and 40?MHz. As a result of alternative current (ac) electrical analysis, it has been determined that the Na₂Si₃O₇/Bi₂O₃ composites can be utilized as a dielectric layer in capacitors. On the other hand, since bismuth oxide is an anti-radiative material, the gamma-ray screening parameters such as mass attenuation coefficient, half layer and tenth layer values along with mean free path of the composites have been defined experimentally by using NaI(Tl) scintillation detector for the Ba-133 radiation source at 81 and 356?keV. The values of these parameters have also been checked by Monte–Carlo simulation. Since a good agreement has been assigned between experimental and Monte–Carlo simulation results, the related gamma ray shielding parameters have been determined by Monte–Carlo simulation for other gamma photon energies (140?keV, 208?keV, 468?keV, and 661?keV) which are generated from Tc-99, Lu-177, Ir-132, and Cs-137 sources. Ultimately, Na₂Si₃O₇/Bi₂O₃(35%) composite has been suggested as an eco-friendly, lead-free glassy structured material for the gamma radiation shielding in medical applications.     

Optical properties of vanadium-doped bismuth borate glasses before and after gamma-ray irradiation

UV–visible, infrared and Raman spectra, together with thermal properties, were measured for glasses from the system Bi₂O₃–B₂O₃–V₂O₅ before and after successive gamma irradiations. The UV–visible spectrum of the undoped glass before irradiation reveals five UV bands at 210, 275, 310, 350 nm, an intense band at 380 nm and a visible band at 420 nm due to the possible combined presence of trace iron impurities and Bi³⁺ ions. The V-doped glasses reveal six UV bands and two visible bands, probably arising from vanadium ions in three possible valencies, V³⁺, V⁴⁺ and V⁵⁺, beside that due to trace iron impurity beside Bi³⁺ ions. The spectra reveal an obvious resistance of the glasses to successive gamma irradiation. The Raman and infrared spectra show characteristic absorption bands, which indicate the sharing of Bi³⁺ ions as glass-forming (BiO₆) octahedral units together with the presence of various groups of the borate network.     

Study of electrical conductivity and phase transition in Bi2O3–V2O5 system

The solid solutions of bismuth–vanadate were prepared by the conventional solid-state reaction. The sample characterization and the study of phase transition were done by using FT-IR, X-ray diffraction (XRD) and DSC measurements. AC impedance measurements proved that the oxide ion conductivity predominantly arises from the grain and grain boundary contributions as two well-defined semicircles are clearly seen along with an inclined spike. The electrical conductivity of Bi₂O₃–V₂O₅ has been studied at different temperatures for various molar ratios. The isothermal conductivity increases with an increase in the concentration of V₂O₅ due to the vacancy migration phenomenon. It has been found that the conductivity of different compositions of Bi₂O₃–V₂O₅ increases and shows a jump in the temperature range 230–260°C due to the phase transition of BiVO₄ from monoclinic scheelite type to that of tetragonal scheelite type. The endothermic peak in DSC at around 260°C reveals the phase transition, which is also confirmed by the XRD and FT-IR analysis. The XRD patterns confirmed the monoclinic structure of BiVO₄.     

Characterisation of thin films of bismuth oxide by X-ray photoelectron spectroscopy

The XPS (or ESCA) technique has been used for the characterisation of vacuum-deposited thin films of bismuth oxide. The spectra of Bi metal and Bi₂O₃ powder are used for comparison. The characterisation is carried out by consideration of the positions of the Bi 4f_{$\text{7}\text{2}$} and 4f_{$\text{5}\text{2}$} peaks and by using peak-fitting routines. A lower suboxide of bismuth, and metallic bismuth are observed in bismuth oxide films as evaporated. Oxidation of these films by heating in air results in bismuth(III) oxide. A linear relation is found between the binding energies and oxidation state. The corresponding O 1s spectra for the two types of film are also discussed.     

Formation of highly textured (1 1 1) Bi2O3 films by anodization of electrodeposited bismuth films

Highly textured bismuth oxide (Bi₂O₃) thin films have been prepared using anodic oxidation of electrodeposited bismuth films onto stainless steel substrates. The Bi₂O₃ films were uniform and adherent to substrate. The Bi₂O₃ films were characterized for their structural and electrical properties by means of X-ray diffraction (XRD), electrical resistivity and dielectric measurement techniques. The X-ray diffraction pattern showed that Bi₂O₃ films are highly textured along (1 1 1) plane. The room temperature electrical resistivity of the Bi₂O₃ films was 10⁵ Ω cm. Dielectric measurement revealed normal oxide behavior with frequency.     

Light Dispersion in Bismuth Germanate Crystals and Bismuth Oxide Films

The dispersion of light in Bi₄Ge₃O₁₂ and Bi₁₂GeO₂₀ single crystals and thin Bi₂O₃ films with a monoclinic structure was investigated in the visible spectral region. The parameters of a single-oscillator approximation have been found. It is established that in Bi₄Ge₃O₁₂ crystals the absorption band caused by the O2p–Bi6p transitions makes the main contribution to the dispersion curve in the visible region, whereas in Bi₁₂GeO₂₀ crystals this is made by transitions from the hybrid O2p–Bi6p states to the conduction band. The dispersion energy, the degree of the ionicity of binding, and the coordination number of the first coordination sphere of the Bi³⁺ cation have been determined.     

Raman and IR spectra of the cation‐deficient Aurivillius layered crystal Bi2W2O9

Raman and IR spectra of Bi₂W₂O₉, the m = 2 member of the cation‐deficient Aurivillius phase, have been measured. The obtained spectra are discussed using the factor group approach for the orthorhombic Pna2₁(C_2v⁹) space group. The results are compared with those obtained for Bi₂WO₆ and some m = 2 members of Aurivillius family of bismuth layered ferroelectrics. Copyright © 2009 John Wiley & Sons, Ltd.     

The influence of oxidation temperature on structural, optical and electrical properties of thermally oxidized bismuth oxide films

Monoclinic bismuth oxide (Bi₂O₃) films have been prepared by thermal oxidation of vacuum evaporated bismuth thin films onto the glass substrates. In order to obtain the single phase Bi₂O₃, the oxidation temperature was varied in the range of 423-573 K by an interval of 50 K. The as-deposited bismuth and oxidized Bi₂O₃ films were characterized for their structural, surface morphological, optical and electrical properties by means of X-ray diffraction, scanning electron microscopy (SEM), optical absorption and electrical resistivity measurements, respectively. The X-ray analyses revealed the formation of polycrystalline mixed phases of Bi₂O₃ (monoclinic, α-Bi₂O₃ and tetragonal, β-Bi₂O₃) at oxidation temperatures up to 523 K, while at an oxidation temperature of 573 K, a single-phase monoclinic α-Bi₂O₃ was formed. From SEM images, it was observed that of as-deposited Bi films consisted of the well-defined isolated crystals of different shapes while after thermal oxidation the smaller dispersed grains were found to be merged to form bigger grains. The changes in the optical properties of Bi₂O₃ films obtained by thermal oxidation at various temperatures were studied from optical absorption spectra. The electrical resistivity measurement depicted semiconducting nature of Bi₂O₃ with high electrical resistivity at room temperature.     

Remarkable catalytic activity of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript>/TiO<Subscript>2</Subscript> nanocomposites prepared by hydrothermal method for the degradation of methyl orange

Visible light Bi₂O₃/TiO₂ nanocomposites are successfully prepared with different dosages of Bi₂O₃ by hydrothermal process. All the as-prepared samples are characterized by X-ray diffraction (XRD), scanning and transmission electron microscopes (SEM and TEM), Brunauer-Emmett-Teller analysis (BET), N₂ adsorption-desorption measurement, and UV-Vis diffuse reflectance spectra (DRS). XRD and Raman spectra reveal the anatase phase of both TiO₂ and Bi₂O₃/TiO₂ nanocomposites. X-ray diffraction patterns demonstrate that the bismuth ions did not enter into the lattice of TiO₂, and Bi₂O₃ is extremely dispersive on the surface of TiO₂ nanoparticles. The incorporation of Bi₂O₃ in TiO₂ leads to the spectral response of TiO₂ in the visible light region and efficient separation of charge carriers. The enhanced visible light activity is tested by the photocatalytic degradation of methyl orange under light illumination, and the performance of Bi₂O₃/TiO₂ nanocomposites are superior than that of pure TiO₂ which is ascribed to the efficient charge separation and transfer across the Bi₂O₃/TiO₂ junction. Bi₂O₃/TiO₂ nanocomposite (20 mg) loaded with 0.25 of Bi₂O₃ dispersed in 50 ml of 5 ppm methyl orange solution exhibited the highest photocatalytic activity of 98.86% within 240 min of irradiation, which is attributed to the low band gap, high surface area, and the strong interaction between Bi₂O₃ and TiO₂.     

Bismuth silicate glass as host media for some selected rare-earth ions and effects of gamma irradiation

Ultraviolet, visible and infrared spectral measurements were used to investigate prepared undoped and rare-earth doped (2.5%) bismuth silicate glasses (80% Bi₂O₃–20%SiO₂) before and after being subjected to gamma irradiation (8?Mrad). The base bismuth silicate glass reveals strong extended UV–near visible absorption bands which are attributed to the presence of trace iron impurities in the raw materials together with absorption due to sharing of Bi³⁺ ions. The RE-doped samples show the same strong UV–near visible bands as the undoped glasses beside extra narrow characteristic bands mostly in the visible and near-infrared regions due to the respective studied rare-earth ions. The base undoped and all RE-doped samples except CeO₂ sample reveal quite resistance to the effect of gamma irradiation due to heavy atomic mass Bi³⁺ ions present in high content (80%) and the rare-earth ions are known to be weakly affected due to the known 5s, 5p shielding. The exceptional effect of CeO₂-doped sample is related to the ability of Ce³⁺ ions to change its oxidation state through photochemical reaction by irradiation or exchange with Fe³⁺ present as trace iron impurities. The FT infrared spectra of the prepared glasses reveal characteristic absorption bands which are related to the silicate groups together with the sharing of vibrational modes due to Bi–O groups. The IR spectra are slightly affected by gamma irradiation indicating the stability of the structural network groups consisting of SiO₄ and BiO₆ units.     

La掺杂诱发层状钙钛矿型铁电体弛豫性相变的介电研究

制备了La掺杂层状钙钛矿铁电体材料SrBi₄Ti₄O₁₅, Sr₂Bi₄Ti₅O₁₈以及共生结构Bi₄Ti₃O₁₂-SrBi₄Ti₄O₁₅，通过研究样品的变温介电特性发现，SrBi_4-xLa_{x 关键词： 弛豫性相变 微畴-宏畴 层状钙钛矿 介电性能}