Raman scattering characterization of Mn composition and strain in Ga1–x Mnx Sb/GaSb epitaxial layers

Raman scattering (RS) experiments have been performed for simultaneous determination of Mn composition and strain in Ga_1–x Mn_x Sb thin films grown on GaSb substrate by liquid phase epitaxy technique. The Raman spectra obtained from various Ga_1–x Mn_x Sb samples show only GaSb‐like phonon modes whose frequency positions are found to have Mn compositional dependence. With the combination of epilayer strain model, RS and energy dispersive x‐ray (EDX) experiments, the compositional dependence of GaSb‐like LO phonon frequency is proposed both in strained and unstrained conditions. The proposed relationships are used to evaluate Mn composition and strain from the Ga_1–x Mn_x Sb samples. The results obtained from the RS data are found to be in good agreement with those determined independently by the EDX analysis. Furthermore, the frequency positions of MnSb‐like phonon modes are suggested by reduced‐mass model. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Multimode phonon structure of Be‐containing II ‐ VI mixed crystals determined by IR spectroscopic ellipsometry

Spectroscopic ellipsometry in the infrared spectral range 250‐5000 cm^‐1 is used for analysis of the dielectric response of Zn_1‐x‐yBe_xMg_ySe and Zn_1‐x‐yBe_xMn_ySe crystals grown by a high‐pressure Bridgman method. Ellipsometric spectra display features in the spectral range 390‐500 cm^‐1 associated with BeSe‐type phonon modes. In the optical spectra of Zn_1‐x‐yBe_xMg_ySe crystals both BeSe‐type and MgSe‐type lattice absorption bands are detected. The MgSe‐like modes are located at approximately 300 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three and one or two classical damped oscillators corresponding to the BeSe‐like and the MgSe‐like transverse‐optical phonon modes, respectively. The frequencies of longitudinal‐optical phonons have been derived from the dielectric loss functions. A red‐shift of the BeSe‐like phonons frequencies with a mean rate 0.42 cm^‐1 (0.50 cm^‐1) per mole percent of Mg (Mn) incorporated to the alloy has been found for examined concentration range x, y ≤ 0.25. A noticeable damping the intensities of BeSe‐type modes with increasing fraction of Mg and Mn dopant is observed in comparison to the strengths of BeSe‐type modes in Zn_1‐xBe_xSe crystals. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Investigation of II –VI alloy lattice dynamics by IR spectroscopic ellipsometry

Optical properties related to lattice vibrations of bulk Zn_1‐xBe_xSe, Zn_1‐x‐yBe_xMn_ySe and Cd_1‐xBe_xSe alloys are reported. Optical phonons of the mixed crystals grown by the Bridgman method have been investigated by infrared spectroscopic ellipsometry in the wave‐number range 300‐8000 cm^‐1. The complex dielectric functions can be reproduced using a model with two or three classical damped oscillators corresponding to the BeSe‐like transverse‐optical phonon‐modes and a Drude contribution from the free carriers. The frequencies of longitudinal‐optical phonons have been found from the imaginary parts of the dielectric loss functions. The influence of the alloy composition on the zone‐centre optical phonon frequencies is discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Raman Scattering Studies on the Thin Graded Band Gap AlGaAs Hetero-Epitaxial Layer

Thin graded hetero-epitaxial AlGaAs layer has been grown from the undersaturated Liquid Phase Epitaxial (LPE) technique. The grown layers have been characterized using Laser Raman scattering studies. The peak position and intensity ratio of GaAs and AlAs like LO phonon frequencies have been measured and compared with conventional LPE grown AlGaAs epitaxial layer. The behaviour of GaAs and AlAs like LO phonons has been found to vary with the aluminum composition in the grown layer. Raman peak positions have been observed to shift to lower wavenumber in GaAs like LO phonon and higher wavenumber side of AlAs like LO phonon. Aluminum free features have been noticed in IEE grown AlGaAs (x > 0.8) hetero epitaxial layers.     

Low‐Temperature Raman Scattering Spectra of GaSexS1‐x Layered Mixed Crystals

Raman scattering has been used to study the vibrational spectra of GaSe_xS_1‐x layered mixed crystals at 10 K. We report the frequency dependencies of different modes on composition x, with particular emphasis on A′₁⁽²⁾ (A_1g¹) and A′₁⁽⁴⁾ (A_1g²) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.     

Soft‐Mode Spectroscopy in Fe:KTa1‐xNbxO3 Crystals

Fe‐doped potassium tantalite niobate, Fe:KTa_1‐xNb_xO₃ (Fe:KTN), crystallizes with x = 0.48 and a perovskite‐type structure in tetragonal system with point group 4mm, conforming space group P4mm. The paraelectric‐ferroelectric structural transition of the Fe:KTN is studied by Raman scattering investigations. A condensed soft lattice vibrational mode at the phase transition has been analyzed. It originates from the symmetric O2/O3‐Nb/Ta‐O3/O2 in‐plane bending of the Nb/TaO₆ group. The soft optical phonon mode concerns the extraordinary transverse optical phonons propagating along the [110] direction. The Raman spectra measured reflect the crystal disorder. Curie temperature measured by two methods is within 353 and 356.5 K.     

XRD,IR, and Raman investigations of structural properties of Dy2‐xHox O3 prepared by sol gel procedure

The Rare earth mixed oxides Dy_2‐xHo_x O₃ (0.0 ≤ x ≤ 2.0) solid solution was synthesized by a sol–gel process. X‐ray diffraction (XRD) data were collected and crystal structure and microstructure analyses were performed applying Rietveld refinement method. Infrared and Raman spectroscopy were used to define the microstructure and to locally probe the structure of the samples. The cationic distribution over the two non‐equivalent sites 8b and 24d of the space group Ia3 is found to be randomly. The crystallite size and microstrain as well as Raman modes positions are influenced by Ho³⁺ concentration. The apparent size is isotropic but significant anisotropy is found for the microstrain with its largest value along the crystallographic direction [h00]. Inspite the single phase solid solution confirmed by Rietveld analysis for all samples, Raman spectra detected the coexistence of two phases; cubic and distorted monoclinic of too small amount or highly disordered, i.e. amorphous like, to be detected by XRD. The result indicates the ability of Raman spectroscopy to detect minor phases in solid solutions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of grain size on the vibrational properties in Mn2O3 nanocrystals

The influence of grain size on the vibrational properties of Mn₂O₃ nanocrystals has been investigated by transmission electron microscopy, Raman and infrared (IR) spectroscopy. It is found that the vibrational properties are sensitively dependent on the grain sizes of Mn₂O₃ nanocrystals. Raman spectra studies indicate that with decreasing grain sizes, allowing the transition of phonons with q ≠ 0 contributes to the Raman spectrum, which leads to the broadening of the Raman peaks in the lower frequency region. IR spectra exhibit the remarkable differences in the shapes with different grain sizes of Mn₂O₃ nanocrystals. The shape of the band in the 570–670 cm⁻¹ ranges is strongly evocative of transverse-optical (TO) and longitudinal-optical (LO) splitting. This splitting appears more and more clear with the decreasing grain size of Mn₂O₃ nanocrystals.     

Spectroscopic investigation of strain induced by compositional variation in bulk InxGa1–xAs crystal grown by MCZM method

Raman scattering (RS), photoluminescence (PL) and energy dispersive X‐ray (EDX) experiments have been carried out to investigate residual strain and hence to understand breakage issue in bulk In_x Ga_1–x As crystal grown by multi component zone melting (MCZM) method. It is found from a comparison that there is a large discrepancy among the RS, PL and EDX results due to the strain induced by compositional variation in the crystal. The strain induced changes in TO_GaAs and PL peak positions are found to be 4.04 cm^–1 and 0.097 eV, respectively, for the variation of composition from 0.06 to 0.29 from the seed‐end to the tail‐end of the crystal. By assuming a simple one‐dimensional strain distribution, the strain value corresponding to 4.04 cm^–1/ 0.097 eV can be obtained of the order of 10^–2, which is large enough for understanding the breakage issue in the crystal investigated here. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

One- and two-phonon vibrational spectra of amorphous As- and Sb-chalcogenide systems

One- and two-phonon infrared and Raman spectra of As- and Sb-chalcogenide systems are reported. Both one- and two-phonon Raman and infrared vibrational spectra exhibit two modes type behaviours characteristics to the vibration modes of AsSe₃, AsS₃, and SbSe₃ pyramids. In the infrared spectra, the larger peak shifts are observed for one phonon frequencies than for two phonon frequencies with the change of the composition x, and its suggests rather big local field effects. The two-phonon coupling parameters of the combination modes are estimated.     

Vacancy defects in as-grown and nº-irradiated GaP and GaAs1−xPx Studied by Positrons

Measurements of positron lifetime τ and of the shape parameter S of the Doppler-broadened annihilation line are used to study bulk and defect properties in GaP and GaAs_1−xP_x. τ and S decrease linearly with the composition x of GaAs_1−xP_x layers. A second lifetime component (τ₂ = 290 ps) observed in as-grown GaP is attributed to stoichiometric P vacancies. After neutron irradiation of GaP and GaAs_0.13P_0.87 positrons are trapped by Ga vacancies (τ₂ = 250 ps). These vacancies anneal out in two stages at 200–550 °C and 550–800 °C.     

Paramagnetic behavior of Zn1−xMnxO at room temperature

Mn‐doped ZnO were synthesized by solid state reaction and sol‐gel method respectively. It was found that samples synthesized by solid state reaction containing Mn₂O₃ and MnO₂ are a mixture of ferromagnetic and paramagnetic phases. Contrary, samples without second phases were found to be paramagnetic at room temperature. According to previous report, interface effects between Zn‐rich Mn₂O₃ and MnO₂ interfaces may be the origin of the ferromagnetic behavior observed in our samples prepared by solid reaction, so the alloy of Zn_1−xMn_xO may be paramagnetic at room temperature. Prepared by sol‐gel technique, the samples without second phases in the XRD patterns are also room‐temperature paramagnetic. Therefore we believe that the magnetism of Zn_1−xMn_xO is paramagnetic at room temperature. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of crystal disorder on linewidth of the Raman modes in GaS1‐xSex layered mixed crystals

The linewidths of Raman‐active intralayer compressional modes in GaS_1‐xSe_x layered mixed crystals (0 ≤ x ≤ 1) have been measured in the 10‐300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three‐phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A complex method for structural investigation of GaAs1−xPx epitaxial layers grown on GaAs substrates

A universal X-ray diffractometer is used for the structural complex investigation of GaAs_1−xP_x epitaxial layers, grown on the (100) face of GaAs substrate. Information is obtained from the analyses of diffraction patterns for some qualities of the epitaxial layers: crystallographical orientation, composition, thickness, as well as structure of the transition region. The suggested complex method has important advantages against the standard Laue method. It is far easier express and convenient for serial investigations.     

Structure and features of the surface morphology of <Emphasis Type="Italic">A</Emphasis><Superscript>4</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>6</Superscript> chalcogenide epitaxial films

The structure and features of the surface morphology of Pb_{1 − x} Mn _x Se (x = 0.03) epitaxial films grown on freshly cleaved BaF₂(111) faces and PbSe_{1 − x} S _x (100) (x = 0.12) single-crystal wafers were investigated by molecular beam condensation and the hot-wall method. It is shown that the epitaxial films, in accordance with the data in the literature for other chalcogenides, grow in the (111) and (100) planes, repeating the substrate orientation. Black aggregates are observed on the film surface of the films grown. The results obtained are compared with the data in the literature and generalized for other chalcogenides: A ⁴ B ⁶:Pb (S, Se, Te); Pb_{1 − x} Sn _x (S, Se, Te); and Pb_{1 − x} Mn (Se, Te). It is established that the formation of black aggregates, which are second-phase inclusions on the surface of epitaxial films obtained by vacuum thermal deposition, is characteristic of narrow-gap A ⁴ B ⁶ chalcogenides.     

Infrared optical properties of Cu1−xLixSe2 thin films

Infrared absorption spectra of Cu_1−xLi_xInSe₂ thin films are measured at room temperature in the wavenumber range from 100 to 600 cm⁻¹. The spectra exhibit two absorption bands in the wavenumber ranges 200–210 cm⁻¹ and 330–355 cm⁻¹ which are ascribed to vibrational modes due to In Se and Li Se vibrations, respectively. The influence of the phase transition from the chalcopyrite structure to the β-NaFeO₂ structure in the composition range x = 0.5–0.6 on the vibrational characteristics is established and discussed.     

Infrared and Raman spectra of potassium pentacyanonitrosylmanganate(I) dihydrate: K3[Mn(CN)5NO]· 2H2O

The infrared spectra of polycrystalline K₃[Mn(CN)₅NO]·2H₂O at different degrees of deuteration were recorded between 4000 and 200 cm^–1, both at room and low temperature. The room-temperature Raman spectrum of the isotopically normal powder was also obtained. The observed bands were assigned to the internal vibrational modes of the [Mn(CN)₅NO]^–3 ion and to the internal and librational modes of water of hydration. In accordance with X-ray diffraction studies, the spectra showed the existence of two crystallographically distinct types of water molecules located in different sets of sites ofC ₁ symmetry.A communication on this subject was presented at the XVI Latin American Chemistry Congress, Rio de Janeiro, Brazil, October 14–20, 1984.     

Magneto‐transport properties of polycrystalline YBa2(Cu1‐xMx)3O7‐δ (M = B and Mn)

The magnetic and transport properties of polycrystalline YBa₂ (Cu_1‐xM_x)₃ O_7‐δ (M = B and Mn) superconductor was investigated. Samples of YBa₂(Cu_1‐xB_x)₃O_7‐δ doped with several concentrations of boron B(x = 0.05 and 0.1) were investigated using magnetization measurements. A YBa₂(Cu_1‐xMn_x)₃O_7‐δ sample doped with Mn with concentration of x = 0.02 was investigated using current‐voltage (I‐V) measurements. Our results on the YBa₂(Cu_1‐xB_x)₃O_7‐δ samples reveal a considerable increase in the hysterisis width of the magnetization, M versus the applied magnetic field H with increasing boron concentration. The lower critical field was also found to be enhanced by boron doping. The critical current density, J_c was found to be significantly enhanced in the Mn‐doped sample. The enhancement of J_c was found to be more significant at the lower temperatures for all applied magnetic fields used (0 Oe, 300 Oe, and 500 Oe). Thus, chemical doping is suggested to enhance the vortex pinning forces in the YBCO samples. From the resistivity (R‐T) measurements, chemical doping of the samples was found to have no significant effect on the critical temperature, T_c. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Infrared optical characterization of epitaxial layer – substrate systems (II). Experimental results for AlxGa1−xAs/GaAS

Infrared reflectance and transmittance spectra and Raman scattering spectra of the epitaxial layer-substrate system Al_xGa_1−xAs/GaAs with compositions in the range x = = 0.08–0.49 are measured in the wavenumber range from 40 to 4000 cm⁻¹. In analysing the spectra in terms of the respective theoretical relations for an optical two-layer system the thickness of the layers, the optical mode characteristics and the free carrier parameters are determined. From a comparison with existing literature data for Al_xGa_1−xAs it is concluded that infrared optical measurements on epitaxial layer-substrate systems can be successfully employed to evaluate the material parameters of epitaxial layers with thicknesses down to a few micrometers.     

The superposition of the lattice radiation and reflectivity spectra of MoO3 and PbMoO4 crystals

The Raman scattering of MoO₃ at 300 and 77 K and the infrared reflectivity spectra of MoO₃ at 300 K have been investigated in different scattering geometries. The Raman spectra of PbMoO₄ crystals at 77 K have been investigated also. The reflectivity spectra of MoO₃ crystals were calculated for E ∥ c and E ∥ a. The phonon parameters and the effective ionic charges of anions and cations for MoO₃ and PbMoO₄ crystals are determined. The diagrams of the splitting of the vibrational levels by the Davydov resonance and by the factor group interactions have been determined. It is shown that the lattice radiation of crystals which have a number of vibrational oscillators (MoO₃, PbMoO₄) begins at low energy vibrational modes and at low values of the damping parameters.