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1.
KDP晶体作为优质的非线性光学材料,具有脆性高、对温度敏感等特性,在单点金刚石切削(SPDT)超精密加工中,微小的温度和应力变化有可能对晶体造成损伤,但是一直未有相关实验报道.本文采用红外热成像仪对SPDT加工过程进行监测,结合Raman光谱技术,研究KDP晶体在SPDT加工前后表面温度和应力的分布变化.大尺寸KDP晶体经过快速微区切削后,在给定的切削工艺条件下,测量出切削部分最高瞬态温度比附近未切削部分高出将近8℃.通过Raman测量,显示切削后晶体表面存在残余拉应力.结合热力耦合模拟仿真,进一步分析了SPDT加工过程动态切削温度对晶体质量的影响,为优化加工参数提供依据.  相似文献   

2.
The coniform bottom device was designed and used in the rapid growth process of KDP crystal. A seed support rack was also designed to be used in rapid growth of KDP crystal to avoid spontaneous nucleation on the interface of seed crystal and rack. The KDP crystals were fast grown at the growth rate of up to 25 mm/day. The optical scatter centers in KDP crystals were observed and their transmissions of different parts were measured. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

3.
In situ spectroscopic ellipsometry was used to monitor the nucleation behavior of CdTe grown on vicinal GaAs (100) substrates by organometallic vapor phase epitaxy. CdTe was grown on GaAs (100) substrates of exact and 2° off towards 110 orientations. A spectroscopic ellipsometer was used to collect in situ data at 44 wavelengths from 4000–7000 Å. The Bruggeman's effective medium approximation was employed to determine the variation of the epilayer volume fraction with thickness, which was an indirect way of monitoring the expected island growth behavior. The Stranski-Krastonov (layer plus island) mode of growth was clearly observed for CdTe growth. The growth on the 2° off substrate was also “denser” than that on exact (100), which implied that coalescence of the islands occurred at lower thickness. This was expected since island nucleation is most favored along the ledges on the surface whose spacing decreases with increasing misorientation. A simple nucleation model, assuming cylinder-like islands, was able to fit the experimental data quite well, lending support to the island growth model.  相似文献   

4.
Experimental investigation of calcium silicate hydrate (C-S-H) nucleation   总被引:2,自引:0,他引:2  
Due to the importance of calcium silicate hydrate (C-S-H) in cement chemistry, its nucleation mode and parameters influencing it were investigated. It has been observed that the C-S-H nucleation follows the general laws governing the nucleation. The degree of supersaturation has been found to be the main parameter controlling homogeneous nucleation rates. The lime concentration in solution, well known to be the most important parameter determining the kinetic, morphological and structural features of C-S-H, also controls the nucleation characteristics of heterogeneous nucleation, i.e. during hydration of cement. The correlation between heterogeneous nucleation of C-S-H and possible final mechanical properties of cement paste has been well established.  相似文献   

5.
利用全息相衬干涉显微术(HPCIM)研究了EDTA对KDP晶体(100)柱面和(101)锥面生长习性的影响.通过界面边界层宽度的变化,可以直观地观测到在溶液中添加少量的EDTA后,促使KDP晶体沿柱面和锥面的生长,特别是对柱面的影响更为显著,并对此作了解释.最佳的EDTA浓度范围有待于进一步研究.  相似文献   

6.
Step velocities and hillock slopes on the {1 0 0} face of KDP were measured over a supersaturation range of 0<σ<0.15, where σ is the supersaturation. The formation of macrosteps and their evolution with distance from the hillock top were also observed. Hillock slope depended linearly on supersaturation and hillock geometry. The two non-equivalent sectors exhibited different slopes and step velocities. AFM shows an elementary step height of 3.7 Å, or half the unit cell height, whereas previous interferometric experiments assumed the elementary step was a unit cell. Values of the step edge energy (), the kinetic coefficients for the slow and fast directions (βS and βF), and the activation energies for slow and fast step motion (Ea,S and Ea,F) were calculated to be 24.0 erg/cm2, 0.071 cm/s, 0.206 cm/s, 0.26 eV/molecule, and 0.21 eV/molecule, respectively. Analysis of macrostep evolution including the dependence of step height on time and terrace width on distance were performed and compared to predictions of published models. The results do not allow us to distinguish between a shock wave model and a continuous step-doubling model. Analysis within the latter model leads to a characteristic adsorption time for impurities (λ−1) of 0.0716 s.  相似文献   

7.
KDP晶体中包裹体形成机制的探讨   总被引:8,自引:8,他引:0  
本文介绍了包裹体对KDP晶体质量的影响,并从两个方面探讨了KDP晶体生长过程中包裹体的形成机制.通过分析KDP晶体表面原子结构研究了不同杂质的吸附情况以及杂质对生长台阶的阻碍作用,通过分析晶体生长过程中流体动力学和质量输运条件的变化研究了旋转晶体的流体切应力和表面过饱和度,结果表明吸附杂质对生长台阶的阻碍和表面过饱和度的不均匀造成了生长台阶的弯曲和宏观台阶的形成,导致生长台阶形貌的不稳定是包裹体形成的重要原因.  相似文献   

8.
本文利用传统的降温法和"点籽晶"快速生长法在不同Na+掺杂浓度的溶液中生长KDP晶体,定量研究了Na+对KDP晶体生长的影响.实验发现:Na+的存在降低了溶液的稳定性,致使KDP晶体柱面容易扩展.Na+的存在对KDP晶体的光学性能基本没有影响.  相似文献   

9.
本文旨在寻找影响杂质阳离子进入KDP晶体能力的因素,我们使用分析纯的KH2PO4和超纯水(电阻率≥18.2MΩ·cm)为原料,分别加入BaCl2·2H2O,CuCl2·2H2O和MgCl2·6H2O,通过降温方式快速生长出KDP晶体.结果表明,cu2+及Mg2+在晶体中的含量基本保持不变,不随其在生长溶液中量的增大而增大,cu2+在晶体中的含量大于Mg2+在晶体中的含量;不同的是,Ba2+在晶体中的含量随着其在生长溶液中量增大而增大.从实验结果我们推断出离子半径和离子水合热是影响二价杂质阳离子在水溶液晶体生长过程中进入KDP晶体能力的重要因素.  相似文献   

10.
用降温法在不同的温度下快速生长KDP晶体,并测量其透过光谱、光学均匀性、金属杂质含量和光散射性能.结果表明随着生长温度的提高,KDP晶体的紫外光吸收和光散射点密度明显降低,但均匀性和杂质金属离子含量并无明显变化.  相似文献   

11.
通过传统降温法生长了不同EDTA和KCl剂量掺杂的KDP晶体,并观察了晶体的光散射情况,测定了晶体柱区样品的透过率和晶体中Fe、Cr、Cl三种杂质元素的含量,结果表明:低浓度的EDTA(0.01 mol;)和KCl(<1.5 mol;)掺杂可以提高晶体的透过率,但高浓度掺杂(0.01 mol;EDTA, 2.0 mol; KCl)会导致晶体散射严重,透过率降低,KCl浓度达到2.5 mol;后晶体生长受到抑制,晶体缺陷严重;晶体中铁Fe3+、Cr3+的总含量随着掺杂浓度的增加而减少,晶体中并没有发现Cl元素存在.  相似文献   

12.
本文利用高分辨X射线衍射技术,在"点籽晶"陕速生长法基础上,研究了掺杂K2SO4对KDP晶体锥面及柱面扇形结构完整性的影响.结果表明,在5×10-5的掺杂条件下,K2SO4对KDP晶体不同扇形区域的影响略有不同,其原因主要在于[SO42-]与KDP晶体各扇形相互作用不同有关.  相似文献   

13.
The face growth rate and critical supersaturation of {100} face were in situ measured using the laser‐polarization‐interference technique in the presence of potassium pyrophosphate, trimetric sodium phosphate and sodium hexametaphosphate impurities. The polyphosphate impurities inhibit the growth rate of prismatic faces. The face growth rate as a function of supersaturation at different impurity concentrations, as well as critical supersaturation as a function of impurity concentrations, was found in good agreement with a two‐dimensional nucleation model in the pure system and Kubota and Mullin's model in the presence of impurities. The average distance L between active sites available for impurity adsorption as well as the edge free energy was calculated. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

14.
本文在不同退火温度和时间下对KDP晶体进行退火实验,并对其光学质量进行了测试和分析.实验表明:合适的退火条件可以增加晶体的透过率、提高光学均匀性、减少散射颗粒,其中160℃为KDP晶体最佳退火温度.在相同的退火温度下,延长退火时间能够更好地提高晶体的光学均匀性和结构完整性.在160℃下退火48h能够使晶体的光损伤阈值提高28;,退火240h能够提高40;以上.  相似文献   

15.
Potassium Dihydrogen Phosphate (KDP) and its isomorphous deuterated form are popular due to their applications in frequency converters and electro‐optic modulation. Different attempts have been made to dope KDP with inorganic additives, organic materials and amino acids. Since many of the metal ions possess more electro negativity which increases the non centrosymmetry, it is of interest to dope them in KDP. The influence of lithium ion (Li+) on NLO properties of KDP crystal has been studied in the present investigation. Single crystal of Lithium ion doped Potassium Dihydrogen Phosphate (KDP) was grown by slow evaporation technique. The enhancement in SHG efficiency after addition of ion Lithium (Li+) was observed by Kurtz Powder SHG test. It was found that the SHG efficiency of KDP after addition of Lithium ion is 1.33 times more than pure KDP. The crystal structure and cell parameters of grown crystal were determined by X‐ray diffraction. The Energy Dispersive X‐ray analysis (EDAX) gives the chemical composition of grown crystal. The functional groups were identified by FT‐IR spectral analysis. The presence of Lithium in the material of grown crystal was detected by Atomic absorption spectroscopy (AAS). The optical absorption and transmission studies were done by UV‐Visible spectral analysis. The grown crystal was subjected to thermogravimetric analysis (TGA) and Differential Scanning Calorimetry (DSC). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

16.
The morphological evolution and growth mechanism of β‐BaB2O4 microcrystal in Li2B4O7‐BaB2O4 glass (Li2O‐B2O3‐BaO) matrix were investigated by optical in situ observation method. And the crystallization temperature Tc has been examined by differential thermal analysis (DTA). It demonstrates that homogeneous distribution of hexagonal shaped BBO microcrystals with size up to several tens of microns is typical when temperature is much higher than Tc, however, heterogeneous nucleation occurs when annealing temperature is close to Tc. For the latter case, crystal clusters that consist of several microcrystal grains are obvious. When the crystals in one specific cluster grows larger, crystal motion occurs in glass matrix while their orientation and symmetrical shape keep nearly no changes. Additionally, the BBO microcrystal has been determined to grow nearly in linear with time, which suggests a mechanism of interface‐controlled growth. Furthermore, the activation energy of BBO crystal growth in glass matrix is calculated which is around 2.4 eV. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

17.
KDP晶体体缺陷和损伤的观测方法研究   总被引:2,自引:3,他引:2  
采用激光散射诊断法和显微镜相衬法对磷酸二氢钾(KH2PO4、KDP)晶体中的缺陷和损伤进行观测,发现散射法可以对晶体中的缺陷和损伤进行灵敏观测,并可以即时判断损伤;而显微镜相衬法可以对损伤形貌清晰观测,两种方法结合使用可以更好地观测晶体的缺陷和损伤并有助于了解晶体损伤的机理.  相似文献   

18.
KDP晶体生长过程中溶液稳定性的研究   总被引:1,自引:0,他引:1  
在KDP晶体生长过程中,溶液的稳定性对KDP晶体的光学质量影响较大.溶液的稳定性是多种因素共同作用的结果.本文主要研究了过饱和KDP溶液中晶胚的分布情况、降温过程中晶体生长驱动力与降温速度之间的关系,并分析了KDP晶体实际生长过程中影响溶液稳定性的主要因素.我们认为,通过改善KDP晶体生长过程中溶液的稳定性,并与其它措施和技术相结合,是提高KDP晶体光学质量的有效途径.  相似文献   

19.
Ti-Al-Nb2O5系原位合成Al2O3晶须的形成机理分析   总被引:5,自引:0,他引:5  
王芬  艾桃桃 《人工晶体学报》2006,35(6):1195-1199
本文研究了以粉埋法原位合成的Al2O3晶须的形态和反应过程以及晶须的生长机理.通过物相测试表明产物由Al2O3、TiAl3、NbAl3和少量的AlN相组成,SEM结合EDS分析表明原位合成了直径小于100nm的Al2O3晶须,晶须呈棉絮状分布于基体交界处.基于铝的过剩,TiAl3相是Ti-Al界面的唯一产物.Ti与O2以反应时间短的动力学势优先形成的TinOm中间产物是Al2O3晶须生成的控制步骤.Nb2O5与铝液的双效复合催化作用,提高了晶须的生成速率;同时Al的用量因AlN的生成而减小,导致生成晶须的催化活性点减小,而扩散到每个活性点周围的TinOm及Nb2O5浓度增加,导致晶须分布密而均匀.Al2O3晶核在催化剂的作用下以螺旋位错生长形成长径比较为理想的Al2O3晶须.  相似文献   

20.
大尺寸KDP(KH2PO4)晶体在切割过程中容易出现开裂现象,为了研究大尺寸KDP晶体切割过程中开裂机制并提出合理切割方案,本文对大尺寸KDP晶体切削效应进行了研究.大尺寸KDP晶体切削过程中刀片与晶体之间的接触应力和切割引起的热应力是晶体切削过程中主要致裂因素,因此本文采用有限元计算方法对KDP晶体切削过程进行热力耦合数值仿真模拟.结果表明切割过程中KDP晶体与刀片之间的压力应小于4.1 MPa,切口处温差应控制在4.2℃之内,同时本文还得到了切削过程可控参数(车床推进力和刀片的线速度)的安全取值范围,该范围的提出对KDP晶体的切割技术具有十分重要的意义.  相似文献   

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