X‐ray powder diffraction study of the semiconducting alloy Cu2Cd0.5Mn0.5GeSe4

The structure of the semiconducting alloy Cu₂Cd_0.5Mn_0.5GeSe₄ was refined from an X‐ray powder diffraction pattern using the Rietveld method. The present alloy crystallizes in the wurtz‐stannite structure, space group Pmn2₁ (N^o 31), and unit cell parameters values of a = 8.0253(2) Å, b = 6.8591(2) Å, c = 6.5734(2) Å and V = 361.84(2) ų. The structure exhibits a three‐dimensional arrangement of slightly distorted CuSe₄, Cd(Mn)Se₄ and GeSe₄ tetrahedras connected by corners. © 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Structural characterization and magnetic properties of the spinel compound CoIn0.5Cr1.5S4

Single crystals of the magnetic semiconductor CoIn_0.5Cr_1.5S₄, belong to the system CoIn_(2‐2X)Cr_(2X)S₄ with x = 0.75, was grown by the chemical transport method. X‐ray powder diffraction characterization by the Rietveld method indicated that CoIn_0.5Cr_1.5S₄ crystallizes in the space group Fd‐3m, Z = 8, with a = 10.0700(6) Å and V = 1021.2(1) ų, in a normal spinel structure. The temperature dependence of the DC magnetization suggests that the studied compound presents a ferromagnetic behavior with a Curie temperature Tc = 220 K. Sharp spin‐glass like behavior was found also. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure characterization of the quaternary compounds CuFeAlSe3 and CuFeGaSe3

The crystal structure of the chalcogenide compounds CuFeAlSe₃ and CuFeGaSe₃, belonging to the system I‐II‐III‐III₃, were characterized using X‐ray powder diffraction data. Both compounds crystallize in the tetragonal space group P42c (N° 112), Z = 1, with unit cell parameters a = 5.609(1) Å, c = 10.963(2) Å for CuFeAlSe₃ and a = 5.6165(3) Å, c = 11.075(1) Å for CuFeGaSe₃. These compounds are isostructural with CuFeInSe₃, and have a normal adamantane structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and X‐ray powder diffraction studies of semiconducting alloys in the system AgCd2‐xZnxGaS4

X‐ray powder technique was used in the investigation of AgCd₂GaS_4–'AgZn₂GaS₄' section to determine the region of AgCd₂GaS₄‐based solubility. It was established that the solid solution forms up to 75 mol.% 'AgZn₂GaS₄'. The refinement of AgCd_0.5Zn_1.5GaS₄ structure was performed. This alloy crystallizes in orthorhombic structure (space group Pmn2₁ ) with unit cell parameters a =0.78772(2), b =0.67221(2), c =0.64019(2) nm, V =0.33899(3) nm³. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure refinement of CuxAg1‐xInTe2 bulk material determined from X‐ray powder diffraction data using the Rietveld method

The influence of the Cu‐content in the quaternary compounds Cu_xAg_1‐xInTe₂ (0 ≤ x ≤1) on the structural properties of the bulk material was discussed. Bulk ingot materials of Cu_xAg_1‐xInTe₂ solid solutions (x = 0.0, 0.25, 0.50, 0.75 and 1.0) have been synthesized by fusion of the constituent elements in the stoichiometric ratios in vacuum‐sealed silica tubes. The materials compositions were confirmed by using energy dispersive analysis of X‐rays (EDAX). X‐ray powder diffraction measurements were performed for all the prepared samples at 300 K in step scanning mode. The analysis of X‐ray data has indicated that the crystal structure of the prepared materials with different compositions is single‐phase polycrystalline materials corresponding to the tetragonal chalcopyrite structure with space group I 2d. The crystal structural parameters were refined by Rietveld method using the Full Prof program. The refined lattice constants (a and c), anion positional parameter, u, and the determined bond distances and angles were found to vary with composition, x, attaining zero tetragonal distortion at x ≈ 0.75, which corresponds to an ideal tetragonal unit cell. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and characterization of the CdGaCrSe(4‐X)S(X) system

Single‐crystal of the CdGaCrSe_(4‐X)S_(X) system (x = 0; 1; 2; 3; 4) were grown by the chemical vapour‐phase transport technique. The crystals were obtaine by using CdCl₂ as transporting agent for the composition with x = 1, and CrCl₃ for those with x = 0; 2; 3 and 4. X‐ray powder diffraction analysis indicated that some of the samples crystallizes in the tetragonal system with space group I‐4 (CdGaCrSe₃S , x = 1; CdGaCrSe₂S₂ , x = 2), or in a cubic system with space group Fd‐3m (CdGaCrSeS₃, x = 3; CdGaCrS₄, x = 4), however the sample of CdGaCrSe₄ (x = 0) crystallizes in rhombohedral system. Magnetic measurements show significant changes in the magnetic interactions behaviour probably due to the anionic substitutions. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure refinement of the ternary compound Cu2SnTe3 by X‐ray powder diffraction

The ternary compound Cu₂SnTe₃ crystallizes in the Imm2 (Nº 44) space group, Z = 2, with a = 12.833(4) Å, b = 4.274(1) Å, c = 6.043(1) Å, V = 331.5(1) ų. Its structure was refined from X‐ray powder diffraction data using the Rietveld method. The refinement of 25 instrumental and structural variables led to R_p = 10.2%, R_wp = 11.8%, R_exp = 7.7%, R_B = 10.6%, S = 1.6 and χ² = 2.6, for 5501 step intensities and 163 independent reflections. This compound is isostructural with Cu₂GeSe₃, and consists of a three‐dimensional arrangement of slightly distorted CuTe₄ and SnTe₄ tetrahedra connected by common corners. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Structural study on a new Cs2S2(SO4)3 crystal

A new type of dicesium disulfur trisulfate, Cs₂S₂(SO₄)₃, crystal has been crystallized. Differential scanning calorimetry (DSC) and X‐ray diffraction measurements have been performed on this compound. The crystal does not reveal any structural phase transition in the temperature range from 120 to 920 K. The compound belongs to a cubic system with space group P2₁3 at room temperature. It is found that both Cs and S atoms located on special positions are 93% occupied and 7% in exchange with each other. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Controllable thermal expansion properties of In2 − xCrxMo3O12

Solid solutions In_{2 − x}Cr_xMo₃O₁₂ have been prepared via the solid state reaction method. The structural and thermal expansion properties have been characterized using X‐ray diffraction. All compounds exhibit monoclinic structure with space group P2₁/a at room temperature, and transform to orthorhombic structure at higher temperature. Compounds In_{2 − x}Cr_xMo₃O₁₂ (x = 0.7, 1.0 and 1.3) possess strong positive thermal expansion in the monoclinic structure, while their thermal expansion coefficients of orthorhombic structure vary from negative to positive with increasing Cr content. It is worthwhile to note that In_1.3Cr_0.7Mo₃O₁₂ and InCrMo₃O₁₂ have near zero thermal expansion properties.     

Powder study of propanthioamide dervative C8H6N2S2

The crystal structure of 2‐cyano‐3‐(2‐thienyl)prop‐2‐enethioamide (C₈H₆N₂S₂), a propanethioamide derivative was solved from high resolution laboratory X‐ray powder diffraction data collected at ambient conditions. Structure determination was performed by means of the global optimization method of simulated annealing at a resolution of 1.5 Å. Rietveld refinement yielded an R_WP value of 4.02% (P2₁/a, a = 15.8174(2) Å, b = 5.6502(1) Å, c = 11.0952(1) Å, β = 116.9923(7)°, V = 883.6(5) ų, Z = 4). The molecules are stacked in parallel layers and are stabilized by hydrogen bonds. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth and structure of KBi(WO4)2 single crystals

Potassium bismuth tungstate [KBi(WO₄)₂] single crystals have been grown by the top‐seeded solution growth technique. Bulk crystal with dimensions up to several centimeters is obtained for the first time. Several self‐flux systems have been used for the growth from the solution and the experiments using K₂W₂O₇ as a solvent are detailed. Powder and single crystal X‐ray diffraction of this crystal are reported. The structure refinement shows that KBi(WO₄)₂ crystallizes in the monoclinic space group C2/c, with a=10.837(3), b=10.586(3), c=7.622(2)Å, β=130.860(3)°, V=661.4(3)ų, and Z=4. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis,Crystal Structure and Charge Distribution of InGaZnO4. X‐ray Diffraction Study of 20kb Single Crystal and 50kb Twin by Reticular Merohedry

Synthesis of InGaZnO₄ at 20Kb and 50Kb produced a single crystal and a twinned crystal respectively. The X�ray diffraction crystal structure refinement (R1 = 0.015 and 0.019 respectively) and the Charge Distribution analysis are reported. Space group is R3m; cell parameters in hexagonal axes are a = 3.2990(2)Å, c = 26.1013(25)Å (20kb single crystal) and a = 3.3051(2)Å, c = 26.1029(19)Å (50kb twinned crystal). The cell volume is 246.01(3)ų and 246.94(3)ų respectively. The In is in regular octahedral coordination, whereas Ga/Zn are in trigonal bipyramid co‐ordination. Charge Distribution on cations (2.94 and 2.95 respectively vs. 3.0 for In, and 2.53 vs. 2.5 for Ga/Zn) shows that the structure is well refined. Charge Distribution on oxygens (—1.96 and —2.04 for O1 and O2, vs. —2.0) excludes the presence of valence unbalance effects. A possible structural role of the trigonal bipyramidal coordination is discussed.     

Crystal growth of the CdGa2(1‐x)Cr2xSe4 compounds by chemical transport method

Single crystals of CdGa_2(1‐x)Cr_2xSe₄ compounds for 0 ≤ x ≤ 1 have been grown by using the chemical vapor transport technique in a closed system. The transporting agent was CdCl₂ in a proportion of 0.75 mg/cc of capsule. The starting material was previously synthetized. The structural characterization on the crystals were done by powder x‐ray diffraction studies. The results show three different phases for various Cr concentration ranges: spinel structure for x ≥ 0.7, rombohedral for 0.6 ≥ x ≥ 0.5 and tetragonal for 0.4 ≥ x ≥ 0. That is, the chromium dilution in the CdCr₂Se₄ compound by Ga atoms produces very significant changes in the structural atomic arrangement. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and XRD analysis of the diluted magnetic semiconductor Zn1‐xNixO

Diluted magnetic semiconductor compound Zn_1‐xNi_x O (x =0.01, 0.02, 0.03, 0.04 and 0.05) was prepared by sol‐gel method and characterized using powder XRD for the distribution of electrons and bonding in the unit cell. The electronic structural studies of this material were carried out by maximum entropy method (MEM) for the quantitative and qualitative measurement on the inclusion and the effect induced on bonding by Ni doping. The spatial arrangement of charge and the bonding behavior of this material were analyzed from 3D, 2D and 1D density distributions. The evidence for the addition of Ni in the host lattice of Zn is realized. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and crystal structure of langbeinite related mixed‐metal phosphates K1.822Nd0.822Zr1.178(PO4)3 and K2LuZr(PO4)3

Two potassium lanthanide zirconium orthophosphates with general composition K_1.822Nd_0.822Zr_1.178(PO₄)₃ (KNdZrP) and K₂LuZr(PO₄)₃ (KLuZrP) were prepared using the flux technique. Original synthetic procedure has been examined for the flux growth of the complex phosphates containing zirconium and lanthanide. Both compounds have been synthesized in the complex melts containing at the same time potassium phosphates and transition metal fluorides. The structures were solved from the single crystal (KNdZrP) and powder (KLuZrP) X‐ray diffraction data. Both compounds are isotypic to langbeinite mineral and crystallize in cubic system (sp. gr. P2₁3) with the cell parameters a = 10.3228(2) and a = 10.29668(5) Å respectively. The rigid framework is built up from the isolated [MO₆] octahedra and [PO₄] tetrahedra interlinked via vertices. The potassium cations are located in the large closed cavities of the framework. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystallographic Analysis of Acetyl β ‐boswellic acid

The crystal structure of the title compound (3 α ‐acetoxy‐urs‐12‐en‐24‐oic acid, C₃₂H₅₀O₄) has been determined by X‐ray crystallographic techniques. The compound crystallizes into orthorhombic space group P2₁2₁2₁ with unit cell parameters : a = 12.773(2), b=16.381(4), c=27.929(7)Å. The structure has been solved by direct methods and refined to R = 0.054 for 4930 observed reflections. The structure contains two crystallographically independent molecules in the asymmetric unit which are almost identical in geometry. Rings A, B, D and E have chair conformations while ring C assumes a sofa conformation in both the molecules. The molecules in the structure are linked together by intra‐ and intermolecular O‐H…= and C‐H…O hydrogen bonds.     

Structure determination of two asymmetrically substituted oxadiazoles from powder diffraction data

The crystal structures of the 1,3,4 oxadiazole compounds N,N‐dimethyl‐N‐[4‐(1,3,4‐oxadiazol‐2‐yl)phenyl]amine ( 1 ) and 2‐methyl‐5‐phenyl‐1,3,4‐oxadiazole ( 2 ) have been determined. In case of 1 no adequate crystals were available; therefore the structure was solved at room temperature from X‐ray powder diffraction data using the method of simulated annealing. This solution is compared to a second one obtained by applying the molecular replacement method. Subsequent Rietveld refinements combined with the so called two stage method based on the data collected to 1.6 Å resolution yielded an R_wp value of 7.27% for 1 . Compound 1 crystallizes in the orthorhombic space group P2₁2₁2₁ with lattice parameters of a = 7.599(4) Å, b = 6.004(2) Å, c = 21.736(3) Å. The crystal structure of 2 was solved by means of single crystal structure analysis (monoclinic space group P2₁/c, a = 8.010(3) Å, b = 10.783(4) Å, c = 19.234(7) Å, β = 90.794(9)°). (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and characterization of inorganic‐organic ZnS(aminopropane)n composite materials

The main goal of our work was the synthesis and characterization of ZnS(aminopropane)_n hybrid inorganic‐organic layered materials. The basic material of our investigation was ZnS(1,3‐dap)_1/2, (where dap denotes diaminopropane). Its crystal structure has been solved by X‐ray powder diffraction methods. This layered compound was prepared using 1,3‐diaminepropane, zinc sulphate (ZnSO₄) and tioacetamide (CH₃CSNH₂). We have also tried to obtain and characterize other materials: ZnS(1‐ap) and ZnS(1,2‐dap), where ap denotes aminopropane. But in these last two cases diffraction patterns were of much poorer quality, which prevented a full structural survey; thus we cannot directly prove that hybrid lamellar materials were obtained. All compounds were studied using X‐ray diffraction, chemical analysis, UV‐vis spectroscopy and scanning electron microscopy. Additionally, using X‐ray diffraction as a function of temperature, we obtained information about structural changes of obtained composite materials under temperature treatment. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal structure of the quaternary alloy CuTaInSe3

The crystal structure of the quaternary compound CuTaInSe₃ belonging to the system (CuInSe₂)_1‐x(TaSe)_x with x= 0.5, was analyzed using X‐ray powder diffraction data. This material is isostructural with the CuFeInSe₃ compound, and crystallize in the tetragonal space group P42c (Nº 112), Z = 1, with unit cell parameters a = 5.7831(1) Å, c = 11.6227(4) Å, V = 388.71(2) ų. The Rietveld refinement of 18 instrumental and structural variables led to R_p = 8.0%, R_wp = 9.5%, R_exp = 6.3% and χ² = 1.5 for 4501 step intensities and 144 independent reflections. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and crystal structure of the layered compound TlGaSe2

The semiconducting compound TlGaSe₂ was grown by solid state reaction technique. The crystal structure of this material was confirmed by single‐crystal X‐ray diffraction. TlGaSe₂ crystallizes in the monoclinic system with space group C2/c (No. 15), Z = 16 and unit cell parameters a = 10.779(2) Å, b = 10.776(1) Å, c = 15.663(5) Å, β = 99.993(6)°. The structural refinement converged to R(F) = 0.0719, R(F²) = 0.0652 and S = 1.17. The structure consists of a three‐dimensional arrangement of distorted TlSe₈ and GaSe₄ polyhedrons. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)