不同氮源制备CNx纳米管薄膜及其低场致电子发射性能

采用高温热解法,分别以氯化铵(NH4Cl)和乙二胺(C2H8N2)为氮源在洁净的硅片上沉积生长CNx纳米管薄膜.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行形貌观察和表征.结果显示不同氮源制备出的CNx纳米管薄膜的洁净度、有序度以及纳米管的结构明显不同.热解乙二胺(C2H8N2)/二茂铁(C10H10Fe)制备出的结晶度较低的"竹节状"结构CNx纳米管平行基底表面有序生长,而且低场致电子发射性能优越,开启电场1.0V/μm,外加电场达到2.89V/μm时发射电流密度为860μA/cm2.     

Optical properties of polymethine molecules incorporated into a macroscopic set of parallel nanotubes

The structural properties of polymethine molecules incorporated into nanofibers of chrysotile asbestos have been studied by absorption-spectroscopy methods. These experiments have shown that, in chrysotile nanotubes, monomeric, all-trans- and cis-isomers, dimers and J aggregates can be observed. Upon incorporation of a dye from weakly concentrated solutions, monomeric forms of polymethine molecules, extended chromophores of which are oriented along parallel asbestos nanotubes, are predominantly observed. The hybrid material under investigation may be of interest for applied problems.     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法，以乙二胺为前驱液，在沉积有铁催化剂的p型硅（111）基底上制备出了定向生长的CNx纳米管.利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx纳米管进行了形貌观察和表征.CNx纳米管的高度在20?μm左右，直径在50—100nm之间，具有明显的“竹节状”结构，结晶有序度较差.对CNx纳米管薄膜进行低场致发射性能测试：外加电场为1.4V/μm，观察到20?μA /cm2发射电流，外电场升至2.54V/μm时发射电流达到1.280mA/cm2，在较高外电场下，没有发现电流“饱和”.这比 关键词： CNx纳米管 高温热解 “竹节状”结构 场致发射     

High yield incorporation and washing properties of halides incorporated into single walled carbon nanotubes

We describe here the high yield filling (i.e. >50%) of single walled nanotubes (SWNTs) with a variety of halides, achieved according to various modified filling procedures. Both bundles and discrete SWNTs can be filled continuously up to lengths of several hundred nm, often with filling yields approaching 60–70% or better. In addition some high yield filled SWNTs were subjected to long-term washing in either boiling or room temperature. aqueous media, which does not remove the filling from the tubules, but enables effective removal of water-soluble extraneous materials . Received: 10 May 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +44-1865/272-690, E-mail: jeremy.sloan@chem.ox.ac.uk     

CNx纳米管的制备、结构观察及低场致电子发射性能研究

采用高温热解法 ,以乙二胺为前驱液 ,在沉积有铁催化剂的p型硅 (1 1 1 )基底上制备出了定向生长的CNx 纳米管 .利用扫描电子显微镜、高分辨率透射电子显微镜和拉曼光谱对CNx 纳米管进行了形貌观察和表征 .CNx 纳米管的高度在 2 0 μm左右 ,直径在 5 0— 1 0 0nm之间 ,具有明显的“竹节状”结构 ,结晶有序度较差 .对CNx 纳米管薄膜进行低场致发射性能测试 :外加电场为 1 4V μm ,观察到 2 0 μA cm2 发射电流 ,外电场升至 2 5 4V μm时发射电流达到1 2 80mA cm2 ,在较高外电场下 ,没有发现电流“饱和” .这比相同实验条件下改变前驱液制备出的碳纳米管和硼碳氮纳米管的场发射性能优越 .还在“竹节状”结构的基础上对CNx 纳米管的场致电子发射机理进行了讨论     

“锥形嵌套"结构CNx纳米管的生长机理及拉曼光谱研究

在氮气、氢气以及氯化铵热解产生的氨气环境下,以钴作为催化剂,在780℃—940℃温度范围内使二甲苯与二茂铁受热分解,合成了CNx纳米管.在高分辨率透射电子显微镜下观察,合成的纳米管呈现“锥形嵌套”的形貌特征.从不同结构的分子面形成能的角度探讨了CNx纳米管的催化生长机理.不同温度下所制备样品的拉曼光谱研究表明,ID/IG值可以反映氮的掺杂所带来的纳米管结晶有序程度的降低,并通过G带向高波数移动证实了氮的掺杂.     

Electronic transport characteristic of an individual CNx/C nanotube Schottky junction

Electrical transport properties of a Schottky junction consisting of carbon nanotube and nitrogen-doped carbon nanotube were studied. The current-voltage characteristics of the junction exhibited reproducible rectifying behavior which could be explained by the Schottky barrier junction. The barrier height and the ideal factor were determined by fitting the current-voltage characteristics to the generalized diode equation. A near power-law dependence of I∼V^m was observed, where the exponent m increases with decreasing temperature. This effect can be accounted for by filling of deep traps at lower temperatures. The charge transport in the nanotubes is found to be strongly controlled and limited by the highly defective trap state originated from structural and chemical defects due to the doping of nitrogen in the CN_x nanotube part. PACS 73.63.Fg; 73.63.Rt; 85.30.Kk     

Electronic structure of deformed carbon nanotubes

Electronic structure of deformed carbon nanotubes varies widely depending on their chirality and deformation mode. We present a framework to analyze these variations by quantifying the dispersion relation and density of states. The theory is based on the Huckel tight-binding model and confirmed by four orbital tight-binding simulations of nanotubes under stretching, compression, torsion, and bending. It unriddles and unifies previous band gap studies and predicts the shifting, merging, and splitting of Van Hove singularities in the density of state, and the zigzag pattern of band gap change with strains. Possible applications to nanotube devices and spectroscopy research are also presented.     

Electronic properties of double-layer carbon nanotubes

The electronic spectra for double-wall zigzag and armchair nanotubes are found. The influence of nanotube curvatures on the electronic spectra is also calculated. Our finding that the outer shell is hole doped by the inner shell is in the difference between Fermi levels of individual shells which originate from the different hybridization of π orbital. The shift and rotation of the inner nanotube with respect to the outer nanotube are investigated. We found stable semimetal characteristics of the armchair DWNTs in regard of the shift and rotation of the inner nanotube. We predict the shift of k_F towards the bigger wave vectors with decreasing of the radius of the armchair nanotube.     

Electronic properties of oxidized carbon nanotubes

The effect of oxygenation on the electronic properties of semiconducting carbon nanotubes is studied from first principles. The O2 is found to bind to a single-walled nanotube with an adsorption energy of about 0.25 eV and to dope semiconducting nanotubes with hole carriers. Weak hybridization between carbon and oxygen is predicted for the valence-band edge states. The calculated density of states shows that weak coupling leads to conducting states near the band gap. The oxygen-induced gap closing for large-diameter semiconducting tubes is discussed as well. The influence of oxygen on the magnetic property is also addressed through a spin-polarized calculation and compared to experiment.     

二茂铁在高温热解乙二胺制备CNx纳米管过程中的催化性能研究

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Nano indentation measurements on nitrogen incorporated diamond-like carbon coatings

Nanoindentation testing was performed on nitrogen (N₂) incorporated diamond-like carbon (N-DLC) films and deposited using radio-frequency plasma-enhanced chemical vapor deposition technique, with varied percentage of nitrogen partial pressures of 0, 44.4, 66.6, and 76.1%. The values of nanohardness (H) and elastic modulus (E) of these films were obtained from 38 to 22 GPa and 462 to 330 GPa, respectively, as the partial pressure of N₂ increases from 0 to 76.1%. Further, these films were studied for % elastic recovery, ratio between residual displacement after load removal and displacement at maximum load (d _res/d _max), plastic deformation energy and plasticity index parameter (H/E). Both hardness per unit stress and plasticity index per unit stress were found to be maximum at N₂ partial pressure of 76.1%. X-ray photoelectron spectroscopy measurements confirmed the presence of N₂ in these films.     

Electronic transport in Y-junction carbon nanotubes

Electronic transport measurements were performed on Y-junction carbon nanotubes. These novel junctions contain a large diameter tube branched into smaller ones. Independent measurements using good quality contacts on both individual Y junctions and many in parallel show intrinsic nonlinear transport and reproducible rectifying behavior at room temperature. The results were modeled using classic interface physics for a junction with an abrupt change in band gap due to the change in tube diameter. These Y-junction tubes represent new heterojunctions for nanoelectronics.     

Electronic properties of multi-defected zigzag carbon nanotubes

Electronic properties of multi-defected zigzag single-walled carbon nanotubes are investigated by use of the tight-binding Green's function method. The Stone-Wales defects and the vacancies are considered. We find that the conductance sensitively depends on the realistic defect configurations for the metallic zigzag carbon nanotubes. Interestingly, the electronic transport properties of the nanotubes with three vacancies can be considered as the sum effect of two double-vacancies, while those with Stone-Wal...     

Electronic transport properties of single-wall boron nanotubes

Electronic transport properties of single-wall boron nanotube(BNT) with different chiralities, diameters, some of which are encapsulated with silicon, germanium, and boron nanowires are theoretically studied. The results indicate that the zigzag(3, 3) BNT has more electronic transmission channels than the armchair(5, 0) BNT because of its unique structure distortion. Nanowires encapsulated in the BNT can enhance the conductance of the BNT to some extent by providing a significant electronic transmission channel to the BNT. The effect of the structure of nanowires and the diameter of BNTs on the transport properties has also been discussed. The results of this paper can enrich the knowledge of the electron transport of the BNT and provide theoretical guidance for subsequent experimental study.     

Influence of gamma radiation on optical properties of Halloysite nanotubes incorporated polycarbonate nanocomposites

In the current research investigation, polycarbonate/hallyosite nanotubes (PC/HNTs) nanocomposite (NC) films have been successfully fabricated by solution intercalation technique using ultrasound energy in facile way which helps complete exfoliation of the HNTs in the matrix. The effect of Gamma irradiation-induced modifications of PC/HNTs NC have been studied in the dose range 200–500?kGy, irradiated with Co⁶⁰ source. The NC films have been evaluated by UV–visible spectroscopy, Fourier Transform Infrared spectroscopy, X-ray diffraction and scanning electron microscopic techniques in order to probe the effect of gamma radiation on the structural behaviors. The obtained results have been indicated that as the Gamma irradiation dosage increases from 200 to 500?kGy, phenolic group forms through scissoring of ester link of PC, which may cause PC to degrade and lose their property. At lower dosage (200?kGy), the effect is less and at higher dosage (500?kGy), the effect is significant and at 300 and 400?kGy, the effect is moderate and NC films retained their properties. The irradiation effect is most significant and effective at the higher dosage range. UV–visible spectroscopy shows a noticeable reduction in the energy band gap due to gamma irradiation.     

Electronic state of ruthenium deposited onto oxide supports: An XPS study taking into account the final state effects

The electronic state of ruthenium in the supported Ru/EO_x (EO_x = MgO, Al₂O₃ or SiO₂) catalysts prepared by with the use of Ru(OH)Cl₃ or Ru(acac)₃ (acac = acetylacetonate) and reduced with H₂ at 723 K is characterized by X-ray photoelectron spectroscopy (XPS) in the Ru 3d, Cl 2p and O 1s regions. The influence of the final state effects (the differential charging and variation of the relaxation energy) on the binding energy (BE) of Ru 3d_5/2 core level measured for supported Ru nanoparticles is estimated by comparison of the Fermi levels and the modified Auger parameters determined for the Ru/EO_x samples with the corresponding characteristics of the bulk Ru metal. It is found that the negative shift of the Ru 3d_5/2 peak which is observed in the spectrum of ruthenium deposited onto MgO (BE = 279.5-279.7 eV) with respect to that of Ru black (BE = 280.2 eV) or ruthenium supported on γ-Al₂O₃ and SiO₂ (BE = 280.4 eV) is caused not by the transfer of electron density from basic sites of MgO, as considered earlier, but by the differential charging of the supported Ru particles compared with the support surface. Correction for the differential charging value reveals that the initial state energies of ruthenium in the Ru/EO_x systems are almost identical (BE = 280.5 ± 0.1 eV) irrespectively of acid-base properties of the support, the mean size of supported Ru crystallites (within the range of 2-10 nm) and the surface Cl content. The results obtained suggest that the difference in ammonia synthesis activity between the Ru catalysts supported on MgO and on the acidic supports is accounted for by not different electronic state of ruthenium on the surface of these oxides but by some other reasons.