Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

An efficient and compact laser-diode end-pumped intracavity frequency-tripled Nd: YVO4 355 nm laser

By exploiting the intracavity frequency conversion configuration, a diode end-pumped acousto-optic (AO) Q-switched Nd:YVO₄ 355 nm laser was demonstrated in this paper. Two LBO crystals were inserted in the cavity to realize the frequency tripling operation, a cascade of the second harmonic generation (SHG) and sum frequency mixing (SFM). Under the absorbed pump power of 13 W, the maximum average output power at 355 nm was obtained to be 1.32 W at the repetition frequency of 17 kHz, with the optical-to-optical conversion efficiency of 10.2%. The corresponding pulse width was 10.2 ns, with the energy of a single pulse and corresponding peak power estimated to be 77.6 μJ and 7.61 kW, respectively.     

Passively Q-switched laser performance of c-cut Nd:Gd0.63Y0.37VO4 crystal

Passively Q-switched c-cut Nd:Gd_0.63Y_0.37VO₄ laser performance at 1.06 μm was demonstrated with Cr⁴⁺:YAG as saturable absorbers for the first time to our knowledge. This c-cut mixed crystal was found to have large energy storage capacity. The shortest pulse width, largest pulse energy, and highest peak power were obtained to be 6.6 ns, 201.7 μJ, and 30.6 kW, respectively.     

Passive stabilization of a passively mode-locked Nd:GdVO4 laser by inverse saturable absorption

A diode-pumped Nd:GdVO₄ laser mode-locked by a semiconductor saturable absorber and output coupler (SESAOC) is passively stabilized to suppress Q-switched mode-locking. A phase mismatched BIBO second-harmonic generation (SHG) crystal is used for passive stabilization. The continuous wave mode-locking (CWML) threshold is reduced and the pulse width is compressed. The pulse width is 6.5 ps as measured at the repetition rate of 128 MHz.     

Q-switched Nd lasers pumped directly into the F3/2 emitting level

The influence of the direct pumping into the ⁴F_3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr⁴⁺:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing ⁴F_5/2 level to 0.88 μm into the ⁴F_3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.     

Pulsed inductive discharge CO2 laser

A pulsed inductive discharge CO₂ laser with a wavelength of 10.6 μm has been created for the first time. The excitation system of a cylindrical pulsed inductive discharge (pulsed inductively coupled plasma) in the gas mixture of CO₂:N₂:He was developed. The temporal and energy parameters of the laser radiation were investigated. The maximum inductive discharge CO₂ laser radiation energy of 104 mJ was achieved. An average power of 3.2 W was obtained at laser generation energy of 65 mJ and pulse repetition rate of 50 Hz. In the cross-section, the laser radiation had the ring shape with an external diameter of 34 mm and thickness of 4-5 mm. The measured divergence of laser radiation was 12 mrad.     

Diode-end-pumped composite Nd:YVO4 yellow laser based on intracavity frequency-doubled self-Raman laser

We report an intracavity frequency-doubled Q-switched self-Raman yellow laser at 587 nm. A composite Nd:YVO₄ crystal was utilized as self-Raman gain medium. The maximum average output power of yellow light obtained was 1.5 W at the incident pump power of 30 W and at a repetition rate of 50 kHz, corresponding to the optical conversion efficiency of 5%. The shortest pulse width, the maximum pulse energy and the highest peak power were measured to be 5.8 ns, 46.7 μJ and 5.9 kW, respectively.     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

β-BaB2O4 deep UV monolithic walk-off compensating tandem

The generation of watt-level cw narrow-linewidth sources at specific deep-UV wavelengths corresponding to atomic cooling transitions usually employs external cavity-enhanced second-harmonic generation (SHG) of moderate-power visible lasers in birefringent materials. Among the oxo-borate materials, barium borate (β-BaB₂O₄ or BBO) combines the highest UV band edge and largest nonlinearity but suffers from large walk-off angles that limits the nonlinear interaction length. Alternative quasi-phase-matched (QPM) ferroelectrics are hardly suited for cavity-enhanced operation due to their much larger UV absorption and associated photo-refractive and thermal lensing effects, in addition to the difficult fabrication of fine-pitch domain gratings for short UV coherence lengths. In this work, we investigate an alternative approach to cw deep-UV generation by employing the low-loss BBO in a monolithic walk-off compensating structure [J.-J. Zondy, Ch. Bonnin, D. Lupinski, J. Opt. Soc. Am. B 20 (2003) 1675] to simultaneously enhance the effective nonlinear coefficient while minimizing the UV beam ellipticity under tight focusing. As a preliminary step to cavity-enhanced operation, and in order to apprehend the design difficulties stemming from the extremely low acceptance angle of BBO, we investigate and analyze the single-pass performance of a L_c = 8 mm monolithic walk-off compensating structure made of 2 optically-contacted BBO plates cut for type-I critically phase-matched SHG of a cw λ = 570.4 nm dye laser. As compared with a bulk crystal of identical length, a sharp UV efficiency enhancement factor of 1.65 has been evidenced with the tandem structure, but at ∼−1 nm from the targeted fundamental wavelength, highlighting the sensitivity of this technique when applied to a highly birefringent material such as BBO. Solutions to angle cut residual errors are identified so as to match accurately more complex periodic-tandem structure performance to any target UV wavelength, opening the prospect for high-power, good beam quality deep-UV cw laser sources for atom cooling and trapping.     

Continuous wave and passively Q-switched laser performance of the mixed crystal Nd:Lux(x = 0.5)Y1 − x VO4

Diode end-pumped continuous-wave and passively Q-switched Nd:Lu_x(x = 0.5)Y_1 − xVO₄ mixed crystal lasers were demonstrated. At the pump power of 12.6 W, the maximum output power of 6.7 W around 1066.5 nm was obtained with the output transmission of 27%. The optical conversion efficiency is 53.2%, corresponding to a slope efficiency of 55.8%. For pulsed operation, the shortest pulse width attained was 8.6 ns, with the pulse repetition frequency of 99 kHz, and the single pulse energy and the peak power were estimated to be 25.5 μJ and 2.96 kW, respectively.     

Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342 nm with V:YAG saturable absorber

We have demonstrated an efficient diode-pumped passively Q-switched Nd:GdVO₄ laser working at 1342 nm by using an uncoated V³⁺:YAG crystal as the saturable absorber, in which both a-cut and c-cut Nd:GdVO₄ crystals are employed. At the maximum absorbed pump power of 9.45 W, the maximum average output power can reach 519 mW and 441 mW corresponding to the output coupler with different transmission of 3% and 10% by using an a-cut Nd:GdVO₄ crystal at 1342 nm, while the shortest pulse duration could be as low as 21.7 ns and 22.3 ns with the repetition rate of 48.41 kHz and 53.25 kHz by using a c-cut Nd:GdVO₄ crystal, corresponding to the output coupler with different transmission of 3% and 10% at 1342 nm, and the single Q-switched pulse energy are 6.67 uJ and 7.06 uJ, the pulse peak power are 307 W and 316 W, respectively. The experimental results show that c-cut Nd:GdVO₄ laser can generate shorter pulse with higher peak power in comparison with a-cut one.     

Effect of microstructure of MgO buffer layer on BaTiO3 grown on silicon substrates

MgO ultrathin films were grown on Si(1 0 0) substrates as buffer layers for the growth of ferroelectric BaTiO₃ thin films by laser molecular beam epitaxy (L-MBE). The deposition process of MgO buffer layers grown on silicon was in situ monitored by reflection high-energy electron diffraction (RHEED). The structure of BaTiO₃ films fabricated on MgO buffers was investigated by X-ray diffraction. Biaxially textured MgO was obtained at high laser energy density, but when the laser energy was lowered, MgO buffer was transformed to the form of texture with angular dispersion with the increase of the film thickness. BaTiO₃ films grown on the former buffer were completely (0 0 1) textured, while those on the latter were (0 0 1) preferred orientated. Furthermore, the fabricated MgO buffers and BaTiO₃ films had atomically smooth surface and interface. All these can reveal that the quality of textured MgO buffer is a key factor for the growth of BaTiO₃ films on silicon.     

RHEED intensity oscillation of C60 growth on GaAs substrates

Intensity oscillation of reflection high-energy electron diffraction (RHEED) is observed during C₆₀ layer epitaxial growth on GaAs (1 1 1)B and (1 1 1)A substrates. The frequency of the oscillation coincides well with growth rate of C₆₀ layers, suggesting that C₆₀ layers grow with repeating nucleation and a step flow growth as with GaAs and other semiconductor materials. Unusual oscillation is observed in the initial C₆₀ layer growth on GaAs (1 1 1)B substrates with (2 × 2) reconstruction. The initial layer growth is completed at approximately half monolayer coverage by C₆₀ molecules. This phenomenon is explained by the model that C₆₀ absorption sites are limited due to As-trimers absorbed on (1 1 1)B surfaces. This model is strongly supported by the fact that no such effect is observed on GaAs (1 1 1)A substrates where no As-trimer is absorbed.     

Diode-end-pumped passively Q-switched Nd:Y0.8Lu0.2VO4 laser with Cr:YAG crystal

A diode end-pumped passively Q-switched Nd: Y_0.8Lu_0.2VO₄ laser with a Cr⁴⁺: YAG crystal is first demonstrated in this paper. The maximum continuous wave (CW) output power of 5.59 W is obtained at the incident pump power of 13.07 W with the output transmission T = 20%, resulting in an optical-to-optical efficiency of 42.7%. For Q-switching operation, the measured pulse duration of 8.5 ns, the pulse energy of 45.24 μJ and the peak power of 5.32 kW are respectively obtained for the output transmission of 50% when the Cr⁴⁺: YAG crystal is used with an initial transmission (T₀) of 60%.     

High efficiency and high energy parametric wavelength conversion using a large aperture periodically poled MgO:LiNbO3

We have demonstrated an efficient high energy 2 μm laser generation with a 36 mm long large aperture 5 mol% MgO-doped periodically poled LiNbO₃ (PPMgLN) nonlinear optical crystal. A high power Q-switched Nd:YAG laser (1.064 μm) was used to pump the quasi-phase matched (QPM) optical parametric oscillator (OPO). A total output energy of 186 mJ with 58% slope efficiency was obtained in two separate beams at 2 μm.     

In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films

The nucleation and grain growth of the Ge₂Sb₂Te₅ (GST) thin films were studied using high voltage electron microscope operated at 1250 kV. As a result, we have found that 2 nm-sized nucleus forms as a cluster which atoms are arranged regularly at the stage of nucleation prior to the formation of grains having crystal structure. The high-resolution transmission electron microscopy study and fast-Fourier transformations revealed that coexistence of face-centered-cubic (FCC) and hexagonal structure occurs, and formation of twin defect is found in the hexagonal structure during the grain growth as the annealing temperature is increased. GST grain having the hexagonal structure grow from the surface, and the growth proceeded perpendicular to the [0 0 0 1], namely the path parallel to the (0 0 0 1) plane. Consequently, grain growth to a large-scale result in a lengthened shape.     

High-flux high harmonic soft X-ray generation up to 10 kHz repetition rate

We report the operation of a Ti:sapphire oscillator-amplifier system with a high, variable repetition rate adjustable between 1 and 15 kHz. The oscillator uses cavity dumping and the multipass amplifier is based on a liquid nitrogen cooled crystal. The system produces pulses with 28 fs duration at 1.1 mJ pulse energy. When pumping the amplifier crystal with 72 W, an average output power of 11 W is obtained at a repetition rate of 10 kHz, resulting in a quantum efficiency of 25%. The output pulses are used to generate high harmonic radiation in argon, neon, and helium, which are detected up to a photon energy of 110 eV, limited by the sensitivity of the toroidal grating employed.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Epitaxial growth La0.67Ca0.33MnO3 thin film by radio frequency sputtering method

Perfect epitaxial growth of La_0.67Ca_0.33MnO₃ (LCMO) thin film has been achieved on (1 0 0) LaAlO₃ (LAO) single crystal substrate by radio frequency sputtering method. X-ray diffraction (XRD) and electron diffraction analysis indicates that La_0.67Ca_0.33MnO₃ film grows epitaxially on LaAlO₃ along [1 0 0] direction of the substrate. The resistivity variation with temperature of the film shows a sharp metal to semiconductor transition peak around 253 K, which is close to that of the target. The magnetoresistance (MR) also reveals high quality epitaxy film characteristic at low temperatures and near the metal to semiconductor transition temperature.