Simulations of grazing-incidence pumped Ni-like Sn X-ray laser at 11.9 nm

Grazing-incidence pumped Ni-like Sn X-ray laser media at 11.9 nm (4d-4p, J = 0-1) is modelled using code EHYBRID and a post-processor code. The required atomic data are obtained using the Cowan code. In this study the pre-formed plasma is pumped on longitudinal direction with a grazing angle. Detailed simulations were performed to optimize the driving laser configurations. Relatively high gain is produced for the Ni-like Sn X-ray laser at 11.9 nm with long pre-pulse and short main pulse drive energy of only 100 mJ on 4 mm slab targets. Using low intensity pre-pulse prior to long pulse decreases the electron density gradient. X-ray resonance lines between 13 and 25 Å emitted from tin plasma have been simulated using post-processor coupled with EHYBRID. The ratio of these resonance lines can be used to measure electron temperature of the laser produced Sn plasma.     

Amplification in Ni-like Nb at 204.2 Å pumped by a table-top laser

We identified for the first time the 3d ⁹4d ¹ S – 3d ⁹4p ¹ P line in Ni-like Nb at 204.2 Å that was predicted to show gain. When pumped with a train of pulses containing less than 1 J per pulse, significant emission was recorded at 204.2 Å following the second and the third pulses. We measured the small signal gain coefficient per Joule of incident laser energy to be 1.49±0.42 cm^–1 J^–1 for this laser transition, which is higher by several orders of magnitude than that reported for other collisional laser systems in this wavelength range.     

Diode laser spectroscopy of ammonia at 760 nm

A tunable diode laser spectrometer has been employed to examine the unknown overtone absorption lines of NH₃ around (760 nm). The spectrometer sources are commercially available heterostructure AlGaAs tunable diode lasers operating in the “free-running” mode. The detection of the lines has been possible by the use of the wavelength modulation spectroscopy and the second harmonic detection technique. A special algorithm has been used in order to fit the highly modulated absorption lines. The weakest observed resonances have absorption cross sections on the order of ?/molecule or ?/amagat. For some of the more intense lines self-, air-, N₂-, He- and H₂-broadening coefficients have been obtained at room temperature and also some shifting coefficients have been measured.     

Ytterbium femtosecond fiber laser without dispersion compensation tunable from 1015 nm to 1050 nm

We report on a widely tunable ytterbium fs-fiber laser without dispersion compensation. The all-normal dispersion laser contains a spectral filter for wavelength tuning and for generating additional amplitude modulation to support the nonlinear polarization evolution as mode-locking mechanism. By tilting the interference filter the center wavelength of the laser can be tuned from 1015 nm to 1050 nm with a pulse energy up to 2.0 nJ. The pulses can be dechirped externally to 108 fs.     

An 8.1 W diode pumped solid-state quasi-continuous-wave yellow laser at 589 nm by intracavity sum-frequency mixing generation

We report an L-shaped symmetrical co-folding-arm plane-plane diode pumped solid-state yellow laser at 589 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing various techniques to optimize the laser’s specifications, a quasi-continuous-wave (QCW) free-oscillation yellow laser source, which has an average output power of 8.1 W, a beam quality factor of M² = 2.3, and a repetition rate of 1.1 kHz, is developed. The generation of yellow laser at 589 nm is achieved by intracavity sum-frequency mixing between the laser lines at 1319 nm and 1064 nm of an Nd:YAG laser in a KTP crystal. To the best of our knowledge, the 8.1 W output at 589 nm is higher than any other diode pumped solid-state yellow laser generated by intracavity sum-frequency generation so far.     

Simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm

Considering the reabsorption loss of the quasi-three level system and the unsaturable loss of the saturable absorber, we obtained the operating condition of a diode-pumped simultaneous dual-wavelength Q-switched Nd:YAG laser operating at 1.06 μm and 946 nm. The dual-wavelength pulsed laser was realized successfully through adaptive coating design of the cavity mirrors. As much as 1.6 W total average output power of the dual-wavelength at 1.06 μm and 946 nm was achieved at the incident pump power of 14.2 W with an optical conversion efficiency of 11.3%.     

41 mW high average power picosecond 177.3 nm laser by second-harmonic generation in KBBF

We report on the generation of high average power, high repetition rate, and picosecond (ps) deep-ultraviolet (DUV) 177.3 nm laser. The DUV laser is produced by second-harmonic generation of a frequency-tripled mode-locked Nd: YVO₄ laser (<15 ps, 80 MHz) with KBBF nonlinear crystal. The influence of different fundamental beam diameters on DUV output power and KBBF-SHG conversion efficiency are investigated. Under the 355 nm pump power of 7.5 W with beam diameter of 145 μm, 41 mW DUV output at 177.3 nm is obtained. To our knowledge, this is the highest average power for the 177.3 nm laser. Our results provide a power scaling by three times with respect to previous best works.     

532 nm laser based on V-type doubly resonant intra-cavity frequency-doubling

LD side-pumped dual interconnected V-type quasi-continuous wave green laser has been demonstrated. The two Nd:YAG modules were placed in a plane-concave V-type resonator and a plane-concave straight cavity formed two stable operation beam of the 1064-nm fundamental frequency laser. Through acousto-optic Q-switched and frequency doubling crystal, two double-frequency laser beams arrived at the folded flat mirror, which were unidirectional output by the folded flat mirror at the end. As the pumped current was 50 A, the 532 nm green laser maximum average output power of 206 W at a repetition of 22.4 kHz was achieved with a pulse width of 201 ns and the largest single pulse energy of 9.2 mJ, corresponding to a peak power of 45.8 kW and a double frequency efficiency of 60.2%.     

Comparison of 885 nm pumping and 808 nm pumping in Nd:CNGG laser operating at 1061 nm and 935 nm

A Nd:CNGG laser operated at 935 nm and 1061 nm pumped at 885 nm and 808 nm, respectively, is demonstrated. The 885 nm direct pumping scheme shows some advantages over the 808 nm traditional pumping scheme. It includes higher slope efficiency, lower threshold, and better beam quality at high output power. With the direct pumping, the slope efficiency increases by 43% and the threshold decreases by 10% compared with traditional pumping in the Nd:CNGG laser operated at 935 nm. When the Nd:CNGG laser operates at 1061 nm, the direct pumping increases the slope efficiency by 14% with a 20% reduction in the oscillation threshold.     

Diode-pumped intra-cavity doubled Nd:LuVO4 laser at 458 nm

We have demonstrated a diode-pumped intra-cavity frequency doubling Nd:LuVO₄ laser operating at 916 nm with a Z-folded cavity. A 10-mm long LBO crystal, cut for critical type I phase matching at 912 nm, is used for the experiment. A maximum output power of 330 mW at 458 nm has been achieved at pump power of 22 W. The optical-to-optical conversion efficiency and slope efficiency is 1.5% and 2.3%, respectively. The power instability at the maximum output power in 30 min is better than 3%.     

Diode-pumped passively Q-switched Nd:LuVO4 laser at 916 nm

We demonstrate a passively Q-switched Nd:LuVO₄ laser at 916 nm by using a Nd, Cr:YAG crystal as the saturable absorber. As we know, it is the first time to realize the laser with a simple linear resonator. When the incident pump power increased from 14.6 W to 23.7 W, the pulse width of the Q-switched laser decreased from 24 ns to 21 ns. The pulse width was insensitive to the incident pump power in the experiment. The average output power of 288 mW with repetition rate of 39 kHz was obtained at an incident pump power of 22.5 W, with the optical-to-optical efficiency and slope efficiency 1.3% and 3.6%, respectively.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

High power single-shot laser ablation of silicon with nanosecond 355 nm

We report on high intensity single-shot laser ablation of monocrystalline silicon with a nanosecond Nd:YAG at 355 nm. It is shown that for incident laser intensities exceeding ∼11.5 GW/cm² on the silicon surface, unusually high etch depths can be achieved reaching values up to 60 μm. The results support previous observations of dramatic increase in etch rates in single-shot laser ablation at 266 nm. A laser-induced explosive boiling mechanism together with secondary plasma heating is believed to be associated with this effect.     

Intracavity frequency doubling of an active Q-switched Nd:YAG laser with 2.25 W output power at 473 nm

An active Q-switched diode-end-pumped Nd:YAG laser is reported with 2.9 W output power on the ⁴F_3/2 → ⁴I_9/2 transitions at a pump power of 24 W. With intracavity frequency doubling using a 20-mm-long LBO, a maximum blue output power of 2.25 W is achieved at a repetition rate of 23 kHz. The conversion efficiency from the corresponding Q-switched fundamental output to blue output is 96%. The peak power of the Q-switched blue pulse is up to 610 W with 160 ns pulse width. The fluctuation of the blue output power is less than 4.0% at the maximum output power.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

LD end pumped, actively mode locked and passively Q-switched Nd:YAP laser at 1341 nm

An end pumped Nd:YAP laser at 1341 nm is actively mode locked and passively Q-switched. Pumping was done with a pulsed high power laser diode with maximum power 425 W. V³⁺:YAG with 61% initial transmission served as saturable absorber, and an acousto-optic modulator is used for active mode locking. The output pulse train with 69 ns duration has a total energy of 3.2 mJ with ±4% shot-to-shot fluctuation. The peak output energy of a single mode locked pulse is 0.25 mJ. The pulse duration of a single mode locked pulse is less than 800 ps. The output laser beam is nearly diffraction limited with 1.6 mm diameter, and beam propagation factor M² about 1.3.     

Self-Q-switched and mode-locked 946 nm Cr,Nd:YAG laser

A simultaneous self-Q-switched and mode-locked diode-pumped 946 nm laser by using a Cr,Nd:YAG crystal as gain medium as well as saturable absorber is demonstrated for the first time as we know. The maximum average output power of 751 mW with a slope efficiency of 18.38% is obtained at an intra-cavity average peak power intensity of 4.83 × 10⁶ W/cm². Under this circumstance, the repetition rate of Q-switched envelopes is 9.63 kHz and the pulse width is about 460 ns. Almost 100% mode-locked modulation depth is obtained at all time in the experiment process whether the incident pump power is low or high. The repetition rate of mode-locked pulses within a Q-switched envelope is 135.13 MHz and the mode-locked pulse width is within 600 ps. The laser produces high-quality pulses in TEM₀₀-mode in the simultaneous self-Q-switched and mode-locked experiment.     

Lasing at 1065 nm in bulk Nd-doped telluride-tungstate glass

We have achieved, for the first time to our knowledge, lasing in a new type of telluride-tungstate glass host doped with neodymium: Nd³⁺:(0.8)TeO₂-(0.2)WO₃. Lasing was obtained at 1065 nm with two samples containing 0.5 mol% and 1.0 mol% Nd₂O₃. During gain-switched operation, slope efficiencies of 12% and 10% were obtained with the 0.5 mol% and 1.0 mol% doped samples, respectively, at a pulse repetition rate of 1 kHz. Judd-Ofelt analysis was further employed to determine the emission cross section σ_e at 1065 nm from the absorption spectra and lifetime data. The emission cross section from the Judd-Ofelt analysis came to 3.23 ± 0.09 × 10⁻²⁰ cm², in reasonable agreement with the value of 2.0 ± 0.13 × 10⁻²⁰ cm² obtained from the analysis of laser threshold data.     

Passively Q-switched Nd:YAG pumped UV lasers at 280 and 374 nm

Pulsed UV lasers at the wavelengths of 374 and 280 nm are realized by cascaded second harmonic generation (SHG) and sum frequency generation (SFG) processes using a Nd:YAG laser at 1123 nm. The Nd:YAG laser is longitudinally pumped and passively Q-switched, and it has a high peak power of 3.2 kW. The UV peak powers at 280 and 374 nm are 100 and 310 W, with pulse lengths of 6 and 8 ns, respectively. Spectral broadening of 374 nm laser by stimulated Raman scattering is studied in single mode pure silica core UV fiber. Realizations of UV lasers enabling compact design at 280 and 374 nm wavelengths are demonstrated.     

Diode-pumped Nd:YVO4-Nd:CNGG crystals blue laser at 462 nm by intracavity sum-frequency-mixing

We report a laser architecture to obtain continuous-wave (cw) blue radiation at 462 nm. A 808 nm diode-pumped the Nd:YVO₄ crystal emitting at 914 nm. A part of the pump power was then absorbed by the Nd:YVO₄ crystal. The remaining was used to pump the Nd:CNGG crystal emitting at 935 nm. Intracavity sum-frequency mixing at 914 and 935 nm was then realized in a LiB₃O₅ (LBO) crystal to reach the blue radiation. We obtained a continuous-wave output power of 892 mW at 462 nm with a pump laser diode emitting 18.4 W at 808 nm.