广色域钙钛矿量子点/荧光粉转换白光LED

报道了一种使用绿色CsPb（Br_0.75I_0.25）₃无机钙钛矿量子点（PeQDs）和红色K₂SiF₆：Mn⁴⁺（KSF）荧光粉作为荧光转换材料实现广色域白光LED的方法。合成了绿色CsPb（Br_0.75I_0.25）₃量子点,峰值波长为526 nm,半高宽度为27 nm,具有很好的单色性。采用蓝光LED芯片、红色KSF荧光粉和绿色CsPb（Br_0.75I_0.25）₃ PeQDs组合能够覆盖CIE 1931颜色空间中很广的色域,达到NTSC标准色域的107%。利用丝网印刷和紫外固化工艺制作了PeQDs薄膜、KSF薄膜和PeQDs-KSF混合薄膜,与蓝光LED芯片组合得到了3种不同封装形式的白光LED器件。研究了不同封装形式对器件光学特性的影响,KSF薄膜在外侧的样品光效最高,为102 lm/W,色温为7 100 K。     

Mechanism of light emission excited by Joule heating in ZnO crystals

Emission of light was observed in ZnO single crystals under Joule heating at high temperatures. This thermally induced emission (thermal emission) appeared at temperatures higher than 600 °C and exhibited itself as a band peaked at 500-520 nm whose intensity increased and maximum shifted towards longer wavelengths as temperature increased. Photoluminescence, thermal emission (TE) and transmission spectra were measured at different temperatures in the range of 20-1100 °C. It was concluded that the TE resulted from radiative recombination of thermally generated equilibrium carriers through some local centers.     

Synthesis and optical properties of amorphous C-Si-O particles

Amorphous C-Si-O particles, prepared by pyrolyzing PDMS in a horizontal furnace using the carrier gas N₂/H₂ at 900 °C, were characterized by electron microscopy, X-ray diffraction, FTIR spectroscopy, X-ray photoelectron spectroscopy and fluorescence spectroscopy. The particles possess four luminescence peaks at 440, 465, 533 and 620 nm, and produce stable red, green or blue light emissions at room temperature when irradiated with appropriate wavelengths, the four peaks attribute to different defect centers in the particles. And the particles exhibit the highest photoluminescence intensity when annealed at 600 °C.     

KBaPO4:Ln (Ln=Eu, Tb, Sm) phosphors for UV excitable white light-emitting diodes

This letter reports the novel three emission bands based on phosphate host matrix, KBaPO₄ doped with Eu²⁺, Tb³⁺, and Sm³⁺ for white light-emitting diodes (LEDs). The phosphors were synthesized by solid-state reaction and thermal stability was elucidated by measuring photoluminescence at higher temperatures. Eu²⁺-doped KBaPO₄ phosphor emits blue luminescence with a peak wavelength at 420 nm under maximum near-ultraviolet excitation of 360 nm. Tb³⁺-doped KBaPO₄ phosphor emits green luminescence with a peak wavelength at 540 nm under maximum near-ultraviolet excitation of 370 nm. Sm³⁺-doped KBaPO₄ phosphor emits orange-red luminescence with a peak wavelength at 594 nm under maximum near-ultraviolet excitation of 400 nm. The thermal stabilities of KBaPO₄:Ln (Ln=Eu²⁺, Tb³⁺, Sm³⁺), in comparison to commercially available YAG:Ce³⁺ phosphor were found to be higher in a wide temperature range of 25-300 °C.     

Progress towards absolute intensity measurements of emissions from high temperature thermographic phosphors

Phosphor thermometry has been successfully used in a number of applications ranging from turbo-machinery, pyrolysis, supersonic and hypersonic studies in the past few decades. There are a number of issues related to high temperature, which include faster decays, decreasing emission intensity and increasing blackbody radiation. Although absolute lifetime decay values are readily available, there has been no known work presenting absolute intensity measurements throughout the phosphors operating temperature range. This additional information could help design engineers facilitate phosphor and instrument selection, optimise system setup, and help estimate the performance of the technique at higher temperatures, for any given optical setup. A number of well known high temperature thermographic phosphors were investigated including YAG:Tm, YAG:Tb and Y₂O₃:Eu from 20 °C in an excess of 1000 °C. Both 355 and 266 nm excitation wavelengths from a Q-switched Nd:YAG laser were used. The subsequent emissions were passed through a narrowband interference filter to isolate the peak emission wavelengths, and were collected using PMT. The methodology for an absolute measurement, which requires a sound understanding of the PMT, including solid angle, collection efficiency, dynode gain, calibration and electronic temporal response for intensity measurements is presented and discussed. The results clearly indicate a variation in phosphor intensity with an increasing temperature, which is considerably different amongst different phosphors under different excitation wavelengths. The combined standard uncertainty of measurement was estimated to be approximately ±10.7%. The existing system was able to monitor intensity values up to 900 °C for Mg₃F₂GeO₄:Mn phosphors, 1100 °C for Y2O3:Eu, 1150 °C for YAG:Tb and up to 1400 °C for YAG:Tm thermographic phosphors. Y₂O₃:Eu using 266 nm excitation was found to exhibit the highest peak intensity per mJ of laser excitation from all the phosphors investigated at 20 °C. However, at high temperatures (900 °C+) YAG:Tm using 355 nm excitation was found to exhibit the highest peak intensity per mJ of an excitation energy.     

Effect of source temperature on the morphology and photoluminescence properties of ZnO nanostructures

ZnO nanostructures have been synthesized by heating a mixture of ZnO/graphite powders using the thermal evaporation and vapor transport on Si(1 0 0) substrates without any catalyst and at atmospheric argon pressure. The influence of the source temperature on the morphology and luminescence properties of ZnO nanostructures has been investigated. ZnO nanowires, nanoflowres and nanotetrapods have been formed upon the Si(1 0 0) substrates at different source temperatures ranging from 1100 to 1200 °C. Room temperature photoluminescence (PL) spectra showed increase green emission intensity as the source temperature was decreased and ZnO nanowires had the strongest intensity of UV emission compared with other nanostructures. In addition, the growth mechanism of the ZnO nanostructures is discussed based on the reaction conditions.     

Influence of CH3COO on the room temperature photoluminescence of ZnO films prepared by CVD

ZnO films with strong c-axis-preferred orientation have been prepared by a single source chemical vapor deposition technique using zinc acetate as source material at the growth temperature of 230 °C. The strong UV and blue emissions were observed in the photoluminescence spectra of as-grown films. A small quantity of residual zinc acetate was reserved on the surface of as-grown ZnO films and the emission mechanism of blue luminescence was nearly related to the CH₃COO^- of unidentate type. The blue emission disappeared and the green emission appeared after annealing treatment. The green emission is related to the singly ionized oxygen vacancies.     

Effects of thermo-hygro-mechanical densification on the surface characteristics of trembling aspen and hybrid poplar wood veneers

The effect of thermo-hygro-mechanical (THM) densification temperature on the surface color, roughness, wettability, and chemical composition of trembling aspen (Populus tremuloides) and hybrid poplar (Populus maximowiczii × P. balsamifera) veneers was investigated. Veneers were subjected to four THM densification temperatures (160 °C, 180 °C, 200 °C, and 220 °C). Veneer color darkened with increasing THM densification temperature. Surface roughness decreased between 160 °C and 200 °C. Wettability decreased after THM densification, but no significant difference was found between treated specimens. ATR-FTIR and XPS results confirmed that THM densification caused major chemical changes in veneer surfaces, and more pronounced at temperatures higher than 160 °C.     

Surface analysis of heat-treated Mong Hsu rubies

Mong Hsu rubies have been heat treated in air at 1100, 1200, 1300, 1400, 1500 and 1600 °C. Their visual appearance and surface analysis (XPS) after each stage of heating have been monitored. The characteristic blue core regions of untreated ruby become slightly faded at 1100 °C and completely disappear at temperatures above 1500 °C. Trace amounts of Na, Ca, Si and Fe were found on the surface of untreated stones. Ti was first detected after heating to 1100 °C. Plots of detected surface concentrations of elements versus temperature show that the highest concentration of Fe occurred at 1300 °C while surface concentrations of Ti appeared to show two maxima near 1300 and 1500 °C. The results suggest that both the changing oxidation state of Fe²⁺ to Fe³⁺ and the diffusion of the Fe and Ti ions with temperature are responsible for the color changes through decreasing Fe²⁺ to Ti⁴⁺ charge transfer.     

The Al-doping and post-annealing treatment effects on the structural and optical properties of ZnO:Al thin films deposited on Si substrate

Al-doped ZnO (ZnO:Al) thin films with different Al contents were deposited on Si substrates using the radio frequency reactive magnetron sputtering technique. X-ray diffraction (XRD) measurements showed that the crystallinity of the films was promoted by appropriate Al content (0.75 wt.%). Then the ZnO:Al film with Al content of 0.75 wt.% was annealed in vacuum at different temperatures. XRD patterns revealed that the residual compressive stress decreased at higher annealing temperatures. While the surface roughness of the ZnO:Al film annealed at 300 °C became smoother, those of the ZnO:Al films annealed at 600 and 750 °C became rougher. The photoluminescence (PL) measurements at room temperature revealed a violet, two blue and a green emission. The origin of these emissions was discussed and the mechanism of violet and blue emission of ZnO:Al thin films were suggested. We concluded that the defect centers are mainly ascribed to antisite oxygen and interstitial Zn in annealed (in vacuum) ZnO:Al films.     

The analysis of thermoluminescent glow peaks of copper doped ZnS thin films after β-irradiation

In the given study, the thermoluminescence (TL) properties of copper (Cu)-doped ZnS thin films were investigated after β-irradiation at room temperature (RT). It was observed that the glow curve of this material has two broad TL peaks, in which one of them was centered at about 110 °C and the other at about 170 °C for a heating rate of 1 °C s⁻¹ in the temperature range from RT to 350 °C. The additive dose (AD), T_m(E_a)−T_stop, repeated initial rise (RIR), variable heating rate (VHR) and computerized glow curve deconvolution (CGCD) methods were used to analyze its glow curves. These methods indicated that the glow curve of this material is the superposition of a number of first- and general-order glow peaks, or at least due to the distribution of traps. The dose responses and fading process of both peaks were also examined, and it was observed that the dose responses of both peaks have similar pattern. First they follow a good linearity with different slopes and then saturate at approximately same dose level (2 kGy). The low-temperature broad peak nearly disappeared after 1 week storage in the dark at RT. On the other hand, the intensity of the high-temperature broad peak was approximately reduced to 50% of its original value. The TL emission spectrum of this material has two main emission bands, namely, the blue and green bands. The first glow peak emits predominantly in blue region, whereas the second glow peak in the green region.     

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH₃ ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10¹⁰ cm⁻², 2.7 × 10¹¹ cm⁻² eV⁻¹ and 6.4 × 10⁻¹⁵ cm⁻² using charge pumping method.     

Fiber-optic color synthesizer

Full-color synthesis was achieved, for what we believe is the first time, utilizing a novel 3x1 hard polymer-clad fiber coupler along with red, green, and blue (RGB) LED primaries. By using RGB LEDs that are coupled to three input ports, the device rendered full color from the output port with a circular emitting pixel of 135 microm in diameter with an extended color gamut. The proposed fiber-optic color synthesizer can provide a compact waveguide solution for the beam scanning display and the tunable pure white source for LED backlighting.     

Synthesis and luminescence of Eu-doped alkaline-earth apatites for application in white LED

A series of Eu²⁺-doped alkaline-earth apatites (alkaline-earth=Ca, Sr and Ba) were synthesized by a solid state reaction method with excess chlorides, and the effect of the used excess chlorides on the luminescent property of the synthesized products was discussed. Photoluminescence measurements showed that Eu²⁺-doped calcium apatite exhibited intensely blue wide-band emission peaking at 457 nm under near UV excitation among the Eu²⁺-doped Ca, Sr and Ba apatites. Blue and white LEDs were successfully fabricated by pre-coating the calcium apatite phosphors onto ∼395 nm-emitting InGaN chips. The CIE coordinates, color temperature, luminous efficacy and rendering index value of the fabricated white LED are (0.3432, 0.3234), 4969 K, 8 lm/W and 80, respectively. The results indicate that the Eu²⁺-activated calcium apatite phosphor is a promising candidate as a blue component for fabrication of near UV-based white LEDs.     

Local dimming algorithm and color gamut calibration for RGB LED backlight LCD display

A 32 in RGB LED backlight unit is developed. A local dimming algorithm is designed for the backlight, and grid-noise artifacts in the LC driving signal are successfully removed with consideration of the backlight distribution to provide identical intensity from each LED block. The 32 in RGB LED backlight LCD display has achieved a static display contrast of over 20000:1 and an average power reduction of 30%. We have also obtained the color gamut transformation matrix for transferring a cold cathode fluorescent lamp BLU LCD display gamut system to our RGB LED BLU LCD display gamut system, and extended the color saturation by suppositional color expansion method. As a result, the color has been accurately reproduced in RGB LED BLU LCD display with more richness and more saturation.     

Enhanced thermal stability of Ag ohmic reflector for InGaN/GaN light-emitting diode using a Ru capping layer

A Ru capping layer is employed to improve the thermal stability of Ag ohmic reflectors for high-power GaN-based light-emitting diodes (LEDs). The 20-nm-thick Ru capping layer is shown to be fairly effective in suppressing agglomeration by forming RuO₂. The Ag/Ru contacts exhibit specific contact resistance of 8.1 × 10⁻⁵ Ω cm² and reflectance of ∼89% at a wavelength of 450 nm when annealed at 500 °C for 1 min, which are much better than that of Ag only contacts. Blue LEDs fabricated with the 500 °C-annealed Ag/Ru contacts give a forward voltage of 2.98 V at an injection current of 20 mA, which is lower than that (3.02 V) of LEDs with the 500 °C-annealed Ag only contacts. LEDs with the 500 °C-annealed Ag/Ru contacts show 25% higher output power (at 20 mA) than LEDs with the 500 °C-annealed Ag only contacts. X-ray photoemission spectroscopy examinations are performed to describe the improved electrical performance of the Ag/Ru contacts.     

液晶显示器广色域技术的研究

针对当前液晶显示器存在色彩表现不佳的缺点, 从原理上研究了影响液晶显示器色域的主要因素。通过实验, 分别验证了彩色滤光片厚度、LED光源光谱以及量子点材料对液晶显示器色域的影响。通过增加液晶面板的彩色滤光片厚度, 将色域增加了8%;通过更改LED光源光谱, 将色域提升到85%NTSC以上;通过采用量子点材料, 实现了100%NTSC以上色域。     

Microstructures and optical properties of Cu-doped ZnO films prepared by radio frequency reactive magnetron sputtering

Pure and Cu-doped ZnO (ZnO:Cu) thin films were deposited on glass substrates using radio frequency (RF) reactive magnetron sputtering. The effect of substrate temperature on the crystallization behavior and optical properties of the ZnO:Cu films have been studied. The crystal structures, surface morphology and optical properties of the films were systematically investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and a fluorescence spectrophotometer, respectively. The results indicated that ZnO films showed a stronger preferred orientation toward the c-axis and a more uniform grain size after Cu-doping. As for ZnO:Cu films, the full width at half maxima (FWHM) of (0 0 2) diffraction peaks decreased first and then increased, reaching a minimum of about 0.42° at 350 °C and the compressive stress of ZnO:Cu decreased gradually with the increase of substrate temperature. The photoluminescence (PL) spectra measured at room temperature revealed two blue and two green emissions. Intense blue-green luminescence was obtained from the sample deposited at higher substrate temperature. Finally, we discussed the influence of annealing temperature on the structural and optical properties of ZnO:Cu films. The quality of ZnO:Cu film was markedly improved and the intensity of blue peak (∼485 nm) and green peak (∼527 nm) increased noticeably after annealing. The origin of these emissions was discussed.     

Stability and luminescence properties of CsPbBr3/CdSe/Al core-shell quantum dots

To improve the stability and luminescence properties of CsPbBr₃ QDs, we proposed a new core-shell structure for CsPbBr₃/CdSe/Al quantum dots (QDs). By using a simple method of ion layer adsorption and a reaction method, CdSe and Al were respectively packaged on the surface of CsPbBr₃ QDs to form the core-shell CsPbBr₃/CdSe/Al QDs. After one week in a natural environment, the photoluminescence quantum yields of CsPbBr₃/CdSe/Al QDs were greater than 80%, and the PL intensity remained at 71% of the original intensity. Furthermore, the CsPbBr₃/CdSe/Al QDs were used as green emitters for white light-emitting diodes (LEDs), with the LEDs spectrum covering 129% of the national television system committee (NTSC) standard color gamut. The core-shell structure of QDs can effectively improve the stability of CsPbBr₃ QDs, which has promising prospects in optoelectronic devices.     

Molecular interaction of oxazine dyes in aqueous solution: Temperature dependent molecular disposition of the aggregates

Temperature dependent molecular interaction of oxazine dyes, viz., brilliant cresyl blue (C.I. Basic dye), cresyl violet (C.I. Basic violet 3) and nile blue (C.I. Basic blue 12) are studied in aqueous media within a concentration range of 5.0 × 10^− 6 M to 8.0 × 10^− 4 M by UV-visible absorption spectroscopy. The effect of temperature on the geometrical structure of the dimer in solution along with the dimerization equilibria is explained in terms of electrostatic and hydrophobic interactions. Modified non-covalent interaction between two monomer molecules in a dimer as a function of temperature affects the extinction coefficient as well as the geometrical disposition of the dimers and this is well manifested in the exciton splitting of the dimer spectra. The angle θ between main oscillators of the two monomer molecules in a dimer increases by 1.94° for brilliant cresyl blue, whereas an increase of 4.32° and 1.73° were observed for cresyl violet and nile blue respectively due to the increase of temperature from 20 °C to 60 °C.