Laser synthesis of thin layers of In4Se3, In4Te3 and modification of their structure and characteristics

Trends of structural modifications and phase composition occurring in In₄Se₃ thin films and In₄Se₃-In₄Te₃ epitaxial heterojunctions under laser irradiations have been investigated. Dynamics of the layer structure modification, depending on laser modes, i.e. pulse duration τ = 2-4 ms, irradiation intensity I₀ = 10-50 kW/cm², number of pulses N = 5-50, was studied by electron microscopy. An increase in laser influence promotes enlargement of the layer grains and transformation of their polycrystalline structure towards higher degree of stoichiometry. As a result of laser solid restructuring heterojunctions of In₄Se₃-In₄Te₃, being photosensitive within 1.0-2.0 μm and showing fast time of response, have been obtained. Laser modification of structure enables one to optimize electrical and optical properties of functional elements on the base of thin films and layers of In₄Se₃, In₄Te₃, widely used as infrared detectors and filters.     

Observation of the K2 4Δg state by cw perturbation-facilitated optical-optical double resonance spectroscopy

This paper reports for the first time both, an experimental observation and theoretical calculations of the K₂ 4³Δ_g state. For the experiment we used cw perturbation-facilitated optical-optical double resonance (PFOODR) spectroscopy. A single mode Ti-sapphire laser and a dye laser served as the pump and probe lasers, respectively. A total of 55 PFOODR signals have been assigned to the 4³Δ_g ← b³Π_u transitions. Absolute vibrational numbering was determined by using quantum defect analysis combined with comparing observed intensities with calculated Franck-Condon factors (FCF). For the former we used known parameters from the 2³Δ_g state since the 2³Δ_g and the 4³Δ_g states belong to the same Rydberg series. We report here our experimental and calculated spectroscopic constants, the corresponding RKR potential energy curve, the Franck-Condon table for the 4³Δ_g ↔ b³ Π_u system, as well as a comparison with the theoretical potential energy curve. The T_e value is found to be 28408.938(52) cm⁻¹.     

Spectroscopy of X2Y4 (D2h) molecules: tensorial formalism adapted to the O(3)⊃D2h chain, Hamiltonian and transition moment operators

A tensorial formalism adapted to the case of the X₂Y₄ molecules with D_2h symmetry has been developed in the same way as in the previous works on XY₄ (T_d) and XY₆ (O_h) spherical tops and XY₅Z (C_4v) symmetric tops. Here, we use the O(3)⊃D_2h group chain. All the coupling coefficients and formulas for the computation of matrix elements are given for this chain and used in the case of the Hamiltonian and transition moment operators.     

High-resolution FTIR measurement of the ν4 band of methylene fluoride-d2

A high-resolution (0.002 cm⁻¹) infrared absorption spectrum of methylene fluoride-d₂ (CD₂F₂) of the lowest fundamental mode ν₄ in the region from 460 to 610 cm⁻¹ has been measured on a Bruker IFS 120-HR Fourier transform infrared spectrometer. More than 3500 transitions have been assigned in this B-type band centered at 521.9 cm⁻¹. The data have been combined with upper state pure rotational measurements in a weighted least-squares fit to obtain molecular constants for the upper state resulting in an overall standard deviation of 0.00018 cm⁻¹. Accurate value for the band origin (521.9578036 cm⁻¹) has been obtained and inclusion of transitions with very high J (?60) and K_a (?34) values has resulted in improved precision for sextic centrifugal distortion constants, in particular D_K, H_KJ, and H_K.     

Effect of sintering atmosphere on the electrical and optical properties of (ZnO)1−x(MnO2)x NTCR ceramics

Nominal composition of (ZnO)_1−x(MnO₂)_x (0.005≤x≤0.2) ceramics have been prepared by the standard solid-state reaction method in three different sintering atmospheres: Ar, air, and reductive atmosphere. The effect of sintering atmosphere on the electron spin resonance (ESR), negative temperature coefficient of resistivity (NTCR), and photoluminescence (PL) properties of (ZnO)_1−x(MnO₂)_x ceramics has been investigated in detail. The results demonstrate that the sintering atmosphere has significant effects on the ESR signals of (ZnO)_1−x(MnO₂)_x; the NTCR of the samples sintered in air is larger than those sintering in Ar and reductive atmosphere; the deep-level PL related to oxygen vacancy increases when sintered in the reductive atmosphere.     

External cavity tunable diode laser spectra of the ν1 + 2ν4 stretch-bend combination bands of NH3 and NH3

The ammonia ν₁ + 2ν₄ perpendicular stretch-bend combination band has been investigated in spectra of ¹⁴NH₃ and ¹⁵NH₃ recorded in the 6400-6800 cm⁻¹ region with an external cavity tunable diode laser (ECTDL) spectrometer. For ¹⁴NH₃, new assignments were determined initially by extrapolating from published low-J jet-cooled beam results up to transitions of higher J and K. Corresponding ν₁ + 2ν₄ transitions for the ¹⁵NH₃ species were then found by identifying similar patterns of lines with a characteristic downshift of approximately 9.7 cm⁻¹. Assignments were confirmed employing ground-state combination differences. Term values, a-s inversion splittings, l-doubling energies and parameter estimates from simple single-state fits are reported for the two ammonia species.     

The bending triad of the quasi-spherical top molecule SO2F2 in the 550 cm region

The analysis of the ν₃/ν₇/ν₉ bending triad of SO₂F₂ has been recently performed with the Watson’s Hamiltonian up to octic terms employing 79 rovibrational parameters but including only the first order Coriolis interaction terms, fixed to ab initio values [H. Bürger, J. Demaison, F. Hegelund, L. Margulès, I. Merke, J. Mol. Struct. 612 (2002) 133-141]. Since SO₂F₂ is a quasi-spherical top, it can also be considered as derived from the sulfate ion. We have thus developed a new tensorial formalism in the O (3) ⊃ T_d ⊃ C_2v group chain [M. Rotger, V. Boudon, M. Loëte, J. Mol. Spectrosc. 216 (2002) 297-307]. This approach allows a systematic development of rovibrational interactions and makes global analyses easier to perform even for complex polyad systems. We present here an application of this model to the analysis of the bending triad, with the same set of microwave assignments and almost the same set of infrared assignments as in the previous study of Bürger et al. It appears that we need to expand our Hamiltonian to a lower degree than the “classical” one (six instead of eight) when including also the second order Coriolis interactions. Our fit does not include more parameters. Furthermore, all of them are determined and the standard deviation of the rotational transitions is twice smaller. The analysis has been performed thanks to the C_2v TDS program suite, which is freely available at the URL: http://www.u-bourgogne.fr/LPUB/c2vTDS.html.     

Luminescent properties of HTP AgGd1−xW2O8:Eux and AgGd1−x(W1−yMoy)2O8:Eux phosphor for white LED

Intense red phosphors, AgGd_1−xEu_x(W_1−yMo_y)₂O₈ (x=0.0-1.0, y=0.0-1.0), have been synthesized through traditional solid-state reaction and characterized by X-ray diffraction (XRD) and photoluminescence (PL). XRD results reveal that AgGd_1−xEu_xW₂O₈ synthesized at 1000 °C has a tetragonal crystal structure, which is named as high temperature phase (HTP) AgGdW₂O₈. All phosphors compositions with Eu³⁺ show red and green emission on excitation either in the charge-transfer or Eu³⁺ levels. Analysis of the emission spectra with different Eu³⁺ concentrations reveal that the optimum dopant concentration for Eu³⁺ is x=0.6 in the HTP AgGd_1−xEu_xW₂O₈ (x=0.0-1.0). Studies on the AgGd_0.4Eu_0.6(W_1−yMo_y)₂O₈ (y=0.0-1.0) and AgGd_1−xEu_x(W_0.7Mo_0.3)₂O₈ (x=0.0-1.0) show that the emission intensity is maximum for compositions with y=0.3 and x=0.5, respectively, and a decrease in emission intensity is observed for higher y or x values. The Mo⁶⁺ and Eu³⁺ co-doped AgGd(WO₄)₂ phosphors show higher emission intensity in comparison with the singly Eu³⁺-doped AgGd(WO₄)₂ in UV region. The intense emission of the tungstate/molybdate phosphors under 394 and 465 nm excitations, respectively, suggests that these materials are promising candidates as red-emitting phosphors for near-UV/blue GaN-based white LED for white light generation.     

Optical and physical properties of different composition of InxSe1−x thin films

Thin film binary alloys of In_xSe_1−x (0.05?x?0.30) have been prepared by the thermal evaporation technique. The optical transmission and reflection spectrum of these films were measured in the range 300-1100 nm. Both refractive index, n and extinction coefficient k have been determined from transmission and reflection measurements in terms of Murmann's equations. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-DiDomenico model. The width of band tail is determined and the optical absorption edge is described using the ‘non-direct transition’ model proposed by Tauc. Finally, the relationship between the optical gap and chemical composition in In_xSe_1−x amorphous system is discussed in terms of the average heat of atomization H_s and average coordination number N_c. The results of these calculations can be used rationalize the observed optical properties of these materials. Finally, the chemical bond approach has been also applied to interpret the decrease of the glass optical gap with increasing In content.     

The structural and magnetic properties of Ni2Mn1−xBxGa Heusler alloys

The influence of the substitution of manganese by boron on the crystal structure and magnetic properties of Ni₂Mn_1−xB_xGa Heusler alloys with 0?x?0.5 has been investigated using X-ray diffraction, thermal expansion, resistivity, and magnetization measurements. The samples with concentrations x<0.25 were found to be of single phase and belonged to the cubic L2₁ crystal structure at room temperature. Crystal cell parameters of the alloys decreased from 5.830 to 5.825 Å with increasing boron concentration (x) from 0 to 0.25. The alloys were ferromagnetically ordered at 5 K and the saturation magnetization decreased with increasing boron concentration. The ferromagnetic ordering and structural transition temperatures for 0?x?0.3 have been observed and the phase (x−T) diagram of the Ni₂Mn_1−xB_xGa system was constructed. The phase (x−T) diagram indicates that the ground state of Ni₂Mn_1−xB_xGa alloys belongs to ferromagnetic martensitic, premartensitic, and austenitic phases in x?0.12, 0.12<x?0.18, and 0.18<x?0.3, respectively. The relative influence of cell parameters and electron concentrations on the phase diagram is discussed.     

Field and temperature induced colossal strain in Gd5(SixGe1−x)4

Gd₅(Si_xGe_1−x)₄, known for its giant magnetocaloric effect, also exhibits a colossal strain of the order of 10,000 ppm for a single crystal near its coupled first-order magnetic-structural phase transition, which occurs near room temperature for the compositions 0.41≤x≤0.575. Such colossal strain can be utilised for both magnetic sensor and actuator applications. In this study, various measurements have been carried out on strain as a function of magnetic field strength and as a function of temperature on single crystal Gd₅Si₂Ge₂ (x=0.5), and polycrystalline Gd₅Si_1.95Ge_2.05 (x=0.487) and Gd₅Si_2.09Ge_1.91 (x=0.52). Additionally a giant magnetostriction/thermally induced strain of the order of 1800 ppm in polycrystalline Gd₅Si_2.09Ge_1.91 was observed at its first order phase transition on varying temperature using a Peltier cell without the use of bulky equipment such as cryostat or superconducting magnet.     

Diode laser absorption spectrum of cold bands of C2HD at 6500 cm

The absorption spectrum of acetylene-d has been observed at high resolution between 6470 and 6630 cm⁻¹ using an external cavity diode laser. Three cold bands have been observed: the strong 2ν₁ band, the weaker ν₁ + ν₂ + 2ν₅ band, and the (ν₁ + ν₃ + ν₅)¹ band, which gains its intensity through Coriolis resonance with 2ν₁. Centers of unblended lines are determined with an accuracy of approximately 10 MHz.     

Short-range order analysis and some physical properties of InxSe1−x glasses

Bulk In_xSe_1−x (with x=5-25 at%) glasses were prepared using the melt-quench technique. Short range order(SRO) was examined by the X-ray diffraction using Cu(k_α) radiation in the wave vector interval 0.28≤k≤6.5 A⁰⁻¹.The SRO parameters have been obtained from the radial distribution function. The inter-atomic distance obtained from the first and second peak are r₁=0.263 and r₂=0.460 nm, which is equivalent In-Se and Se-Se bond length. The fundamental structural unit for the studied glasses is In₂Se₃ pyramid. Using the differential scanning calorimetry (DSC), the crystallization mechanism of In_xSe_1−x chalcogenide glass has been studied. The glass transition activation energy (E_g) is 289±0.3 kj/mol.There is a correlation amongst the glass forming ability, bond strength and the number of lone pair electrons. The utility of the Gibbs-Di Marzio relation was achieved by estimating T_g theoretically.     

FePt L10 ordering and grain growth using millisecond pulse laser processing

The structural and magnetic properties of ∼12 nm thick FePt thin films grown on Si substrates annealed using a 1064 nm wavelength laser with a 10 ms pulse have been examined. The A1 to L1₀ ordering phase transformation was confirmed by electron and X-ray diffraction. An order parameter near 50% and a maximum coercivity of 12 kOe were obtained with laser energy densities of 25-32 J/cm². Grain growth, quantified by dark field transmission electron microscopy, occurred during chemical ordering at the laser pulse widths studied.     

Improvement in the corrosion resistance of Al18B4O33w/2024Al composite by laser surface treatment

Aluminum metal-matrix composites (MMCs) show great potential for aircraft industries. Nevertheless, the composites can be affected by different forms of corrosion such as pitting and galvanic corrosion. A pulsed YAG laser installation was used to produce surface treatment on Al₁₈B₄O₃₃w/2024Al composite. Results indicate that laser power has significant influences on both of the microstructure and the corrosion resistance. The difference in morphological transformations was observed on the surfaces of the laser-treated specimens. An increase in E_pit was obtained after laser treatment for the composite. The improvement was considered primarily due to the reduction both of reinforcement Al₁₈B₄O₃₃ whisker and intermetallics CuAl₂ on the surfaces of the laser-treated composites, which were found to be sites for pits nucleation. Moreover, the specimen with 700 W laser treatment exhibited a much greater resistance to corrosion than the other specimens with laser treatment. This was attributed to the formation of the homogeneous and defect free microstructure in the laser-modified layer.     

Study of polycrystalline bulk CuIn1-xGaxTe2

Polycrystalline CuIn_1−xGa_xTe₂ bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1 1 2) plane. Photoluminescence spectra were recorded at 7 K and 700 mW to characterize the defects and the structural quality. The main peak as a function of composition has been studied.     

Planar nano-block structures Tin+1Al0.5Cn and Tin+1Cn (n = 1, and 2) from MAX phases: Structural,electronic properties and relative stability from first principles calculations

Structural, electronic properties and relative stability of quasi-two-dimensional (2D) free-standing planar nano-block (NBs) structures Ti_n+1Al_0.5C_n and Ti_n+1C_n (n = 1 and 2), which can be prepared using the recently developed procedure of exfoliation of corresponding NBs from MAX phases, were examined within first principles calculations in comparison with parent MAX phases Ti₃AlC₂ and Ti₂AlC. We found that in general Ti_n+1C_n and Ti_n+1Al_0.5C_n NBs retain the atomic geometries of the corresponding blocks of the MAX phases, but some structural distortions for the NBs occur owing to the lowering of the coordination number for atoms in the external Ti sheets of the nano-block structures. Our analysis based on their cohesive and formation energies reveals that the stability of the nano-block structures increases with index n (or, in other words, with a growth of the number of Ti–C bonds), the Al-containing NBs becoming more stable than the “pure” Ti–C NBs. Our data show that the magnetization of the simulated planar nano-block structures can be expected; so, for the Ti₃C₂ nano-block the most stable will be the spin configuration, where within each external Ti sheet the spins are coupled ferromagnetically together with antiferromagnetic ordering between opposite external titanium sheets of this nano-block.     

Population analysis solution to hardness enhancement in TiCxN1−x

We investigated the hardness enhancement in titanium carbonitrides (TiC_xN_1−x) by the population analysis method based on first-principles calculations. Populations for bonds TiC and TiN in TiC_xN_1−x (0.25<x<0.75) are all positive. The enhanced hardness for titanium carbonitrides is well explained by overlap population analysis. Intrinsic hardness of TiC_xN_1−x has been calculated based on the obtained overlap populations. The calculated results are in good agreement with the available experimental data.     

Observation of the transition from diffusive regime to ballistic regime of the 2DEG transport property in AlxGa1−xN/GaN heterostructures

Electron–electron interaction effect of the two-dimensional electron gas (2DEG) in Al_xGa_1−xN/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures. From the temperature dependence of the longitudinal conductivity of the heterostructures, a clear transition region has been observed. Based on the theoretical analysis, we conclude that this region corresponds to the transition from the diffusive regime to the ballistic regime of the 2DEG transport property. The interaction constant is determined to be −0.423, which is consistent with the theoretical prediction. However, the critical temperature for the transition, which is 8 K in Al_xGa_1−xN/GaN heterostructures, is much higher than the theoretical prediction.