Structure and high-temperature thermoelectric properties of SrAl2Si2

Single crystals of SrAl₂Si₂ were synthesized by reaction of the elements in an aluminum flux at 1000 °C. SrAl₂Si₂ is isostructural to CaAl₂Si₂ and crystallizes in the hexagonal space group P-3m1 (90 K, a=4.1834 (2), c=7.4104 (2) Å, Z=1, R1=0.0156, wR2=0.0308). Thermal analysis shows that the compound melts at ∼1020 °C. Low-temperature resistivity on single crystals along the c-axis shows metallic behavior with room temperature resistivity value of ∼7.5 mΩ cm. High-temperature Seebeck, resistivity, and thermal conductivity measurements were made on hot-pressed pellets. The Seebeck coefficient shows negative values in entire temperature range decreasing from ∼−78 μV K⁻¹ at room temperature to −34 μV K⁻¹ at 1173 K. Seebeck coefficients are negative indicating n-type behavior; however, the temperature dependence is consistent with contribution from minority p-type carriers as well. The lattice contribution to the thermal conductivity is higher than for clathrate structures containing Al and Si, approximately 50 mW cm⁻¹ K, and contributes to the overall low zT for this compound.     

Thermoelectric properties of Ag-doped n-type (Bi2Te3)0.9-(Bi2−xAgxSe3)0.1 (x=0-0.4) alloys prepared by spark plasma sintering

Ag-doped n-type (Bi₂Te₃)_0.9-(Bi_2−xAg_xSe₃)_0.1 (x=0-0.4) alloys were prepared by spark plasma sintering and their physical properties evaluated. When at low Ag content (x=0.05), the temperature dependence of the lattice thermal conductivity follows the trend of (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1; while at higher Ag content, a relatively rapid reduction above 400 K can be observed due possibly to the enhancement of scattering of phonons by the increased defects. The Seebeck coefficient increases with Ag content, with some loss of electrical conductivity, but the maximum dimensionless figure of merit ZT can be obtained to be 0.86 for the alloy with x=0.4 at 505 K, about 0.2 higher than that of the alloy (Bi₂Te₃)_0.9-(Bi₂Se₃)_0.1 without Ag-doping.     

Thermoelectric properties of polycrystalline La1−xSrxCoO3

Thermoelectric properties of polycrystalline La_1−xSr_xCoO₃, where Sr²⁺ is substituted in La³⁺ site in perovskite-type LaCoO₃, have been investigated. Sr-doping increases the electrical conductivity (σ) of La_1−xSr_xCoO₃, and also decreases the Seebeck coefficient (S) for 0.01?x?0.40. A Hall coefficient measurement reveals that the increase in electrical conductivity arises from increases in both carrier concentration and the Hall mobility. The decrease in the Seebeck coefficient is caused by a decrease in carrier effective mass as well as increase in carrier concentration. The highest power factor (σS²) is 3.7×10⁻⁴ W m⁻¹ K⁻² at 250 K for x=0.10. The thermal conductivity (κ) is about 2 W m⁻¹ K⁻¹ at 300 K for 0?x?0.04, and increases for x?0.05 because of an increase in heat transport by conductive carrier. The thermoelectric properties of La_1−xSr_xCoO₃ are improved by Sr-doping, and the figure of merit (Z=σS² κ⁻¹) reaches 1.6×10⁻⁴ K⁻¹ for x=0.06 at 300 K (ZT=0.048). For heavily Sr-doped samples, the thermoelectric properties diminish mainly because of the decrease in the Seebeck coefficient and the increase in thermal conductivity.     

Transport Properties of Bi2−xInxSe3 Single Crystals

The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi_2−xIn_xSe₃ (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi₂Se₃ crystal lattice on the individual components of thermal conductivity is evaluated and discussed.     

Transport and optical properties of heavily hole-doped semiconductors BaCu2Se2 and BaCu2Te2

Experimental and theoretical studies of the electronic and optical properties of orthorhombic BaCu₂Se₂ and BaCu₂Te₂ are reported. Experimental data include the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity, and lattice constants for , and optical transmission and diffuse reflectance data at room temperature. Nominally stoichiometric, polycrystalline samples form with hole concentrations inferred from Hall measurements of 2×10¹⁸ and 5×10¹⁹ cm⁻³ near room temperature for the selenide and telluride, respectively. The corresponding mobilities are near 15 cm² V⁻¹ s⁻¹ for both materials. Optical measurements reveal a transition near 1.8 eV in BaCu₂Se₂, while no similar feature was observed for BaCu₂Te₂. First principles calculations indicate both materials are direct or nearly direct gap semiconductors with calculated gaps near 1.0 eV and 1.3 eV for the telluride and selenide, respectively, and predict weak absorption below about 2 eV. Transport properties calculated from the electronic structure are also presented.     

Thermoelectric properties and microstructure of Mg3Sb2

Mg₃Sb₂ has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg₃Sb₂ were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K.     

Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba8−ySryAl14Si32 (0.6≤y≤1.3) prepared by aluminum flux

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3?n. Electron microprobe characterization indicates the composition to be Ba_8−ySr_yAl_14.2(2)Si_31.8(2) (0.77<y<1.3). Single-crystal X-ray diffraction data (90 and 12 K) were refined with the Al content fixed at the microprobe value (12 K data: R₁=0.0233, wR₂=0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered.     

Synthesis and electrical conductivity of perovskite-type PrCo1−xMgxO3

Oxides in the system PrCo_1−xMg_xO₃ (x=0.0, 0.05, 0.10, 0.15, 0.20, 0.25) were synthesized by citrate technique and characterized by powder X-ray diffraction and scanning electron microscope. All compounds have a cubic perovskite structure (space group ). The maximum ratio of doped Mg in the system PrCo_1−xMg_xO₃ is x=0.2. Further doping leads to the segregation of Pr₆O₁₁ in PrCo_1−xMg_xO₃. The substitution of Mg for Co improves the performance of PrCoO₃ as compared to the electrical conductivity measured by a four-probe electrical conductivity analyzer in the temperature range from 298 to 1073 K. The substitution of Mg for Co on the B site may be compensated by the formations of Co⁴⁺ and oxygen vacancies. The electrical conductivity of PrCo_1−xMg_xO₃ oxides increases with increasing x in the range of 0.0-0.2. The increase in conductivity becomes considerable at the temperatures ?673 K especially for x?0.1; it reaches a maximum at x=0.2 and 1073 K. From x>0.2 the conductivity of PrCo_1−xMg_xO₃ starts getting lower. This is probably a result of the segregation of Pr₆O₁₁ in PrCo_1−xMg_xO₃ , which blocks oxygen transport, and association of oxygen vacancies. A change in activation energy for all PrCo_1−xMg_xO₃ compounds (x=0-0.25) was observed, with a higher activation energy above 573 K and a lower activation energy below 573 K. The reasons for such a change are probably due to the change of dominant charge carriers from Co⁴⁺ to Vö in PrCo_1−xMg_xO₃ oxides and a phase transition mainly starting at 573 K.     

Investigation of the quasi-ternary system LaMnO3-LaCoO3-“LaCuO3”—I: the series La(Mn0.5Co0.5)1−xCuxO3−δ

The La(Mn_0.5Co_0.5)_1−xCu_xO_3−δ series with x=0, 0.05, 0.1, 0.2, 0.4, 0.6, 0.8 and 1 was synthesized by the Pechini method to obtain insight into the phase formation in the quasi-ternary LaMnO₃-LaCoO₃-“LaCuO₃” system caused by the instability of LaCuO₃ under ambient conditions. After sintering at 1100°C some remarkable results were obtained: LaMn_0.3Co_0.3Cu_0.4O_3−δ crystallized as a single phase in the orthorhombic perovskite structure typical of LaCuO₃. Among the synthesized compositions this compound showed the highest electrical conductivity in air at 800°C (155 S cm⁻¹) and also the highest thermal expansion coefficient (α_30−800°C=15.4×10⁻⁶ K⁻¹). The LaCuO_3−δ composition also crystallized as a single phase but in a monoclinic structure although previous investigations have shown that other phases are preferably formed after sintering at 1100°C. The electrical conductivity and thermal expansion coefficient were the lowest within the series of compositions, i.e. 9.4 S cm⁻¹ and 11.9×10⁻⁶ K⁻¹, respectively.     

p-Type thermoelectric properties of the oxygen-deficient perovskite Ca2Fe2O5 in the brownmillerite structure

Brownmillerite calcium ferrite was synthesized in air at 1573 K and thermoelectric properties (direct current electrical conductivity σ, Seebeck coefficient α, thermal conductivity κ, thermal expansion α_L) were measured from 373 to 1050 K in air. Seebeck coefficient was positive over all temperatures indicating conduction by holes, and electrical properties were continuous through the Pnma-Imma phase transition. Based on the thermopower and conductivity activation energies as well as estimated mobility, polaron hopping conduction was found to dominate charge transport. The low electrical conductivity, <1 S/cm, limits the power factor (α²σ), and thus the figure of merit for thermoelectric applications. The thermal conductivity values of ∼2 W/mK and their similarity to Ruddlesden-Popper phase implies the potential of the alternating tetrahedral and octahedral layers to limit phonon propagation through brownmillerite structures. Bulk linear coefficient of thermal expansion (∼14×10⁻⁶ K⁻¹) was calculated from volume data based on high-temperature in situ X-ray powder diffraction, and shows the greatest expansion perpendicular to the alternating layers.     

Structure and properties of the CaFe2O4-type cobalt oxide CaCo2O4

The calcium cobalt oxide CaCo₂O₄ was synthesized for the first time and characterized from a powder X-ray diffraction study, measuring magnetic susceptibility, specific heat, electrical resistivity, and thermoelectric power. CaCo₂O₄ crystallizes in the CaFe₂O₄ (calcium ferrite)-type structure, consisting of an edge- and corner-shared CoO₆ octahedral network. The structure of CaCo₂O₄ belongs to an orthorhombic system (space group: Pnma) with lattice parameters, a=8.789(2) Å, b=2.9006(7) Å and c=10.282(3) Å. Curie-Weiss-like behavior in magnetic susceptibility with the nearly trivalent cobalt low-spin state (Co³⁺, 3d, S=0), semiconductor-like temperature dependence of resistivity (ρ=3×10⁻¹ Ω cm at 380 K) with dominant hopping conduction at low temperature, metallic-temperature-dependent large thermoelectric power (Seebeck coefficient: S=+147 μV/K at 380 K), and Schottky-type specific heat with a small Sommerfeld constant (γ=4.48(7) mJ/Co mol K²), were observed. These results suggest that the compound possesses a metallic electronic state with a small density of states at the Fermi level. The doped holes are localized at low temperatures due to disorder in the crystal. The carriers probably originate from slight off-stoichiometry of the phase. It was also found that S tends to increase even more beyond 380 K. The large S is possibly attributed to residual spin entropy and orbital degeneracy coupled with charges by strong electron correlation in the cobalt oxides.     

Structure and properties of a novel cobaltate La0.30CoO2

The layered cobaltate La_0.30CoO₂ was prepared from Na_xCoO₂ precursor by a solid-state ionic exchange and was characterized by means of X-ray and neutron diffraction, magnetic, thermal and electric transport measurements. The compound consists of hexagonal sheets of edge-sharing CoO₆ octahedra interleaved by lanthanum monolayers. Compared to Na⁺ in the parent system, the La³⁺ ions occupy only one-third of available sites, forming a 2-dimensional superstructure. The deviation from the ideal stoichiometry La_1/3CoO₂ introduces extra hole carriers into the diamagnetic LS Co³⁺ matrix making the sample Pauli paramagnetic. The temperature dependence of the electrical conductivity in La_0.30CoO₂ follows Mott's T^−1/3 law up to about 400 K, which is in contrast with the standard metallic behavior in the Na⁺ homolog possessing the same formal doping. The experiments are complemented by electronic structure calculations for La_0.30CoO₂ and related Na_xCoO₂ systems.     

Structure and conductivity of strontium-doped cerium orthovanadates Ce1−xSrxVO4 (0≤x≤0.175)

A-site substituted cerium orthovanadates, Ce_1−xSr_xVO₄, were synthesised by solid-state reactions. It was found that the solid solution limit in Ce_1−xSr_xVO₄ is at x=0.175. The crystal structure was analysed by X-ray diffraction and it exhibits a tetragonal zircon structure of space group I4₁/amd (1 4 1) with a=7.3670 (3) and c=6.4894 (1) Å for Ce_0.825Sr_0.175VO₄. The UV-vis absorption spectra indicated that the compounds have band gaps at room temperature in the range 4.5-4.6 eV. Conductivity measurements were performed for the first time up to the strontium solid solution limit in air and in dry 5% H₂/Ar with conductivity values at 600 °C ranging from 0.3 to 30 mS cm⁻¹ in air to 30-45 mS cm⁻¹ in reduced atmosphere. Sample Ce_0.825Sr_0.175VO₄ is redox stable at a temperature below 600 °C although the conductivity is not high enough to be used as an electrode for solid oxide fuel cells.     

Synthesis and evaluation of lead telluride/bismuth antimony telluride nanocomposites for thermoelectric applications

Heterogeneous nanocomposites of p-type bismuth antimony telluride (Bi_2−xSb_xTe₃) with lead telluride (PbTe) nanoinclusions have been prepared by an incipient wetness impregnation approach. The Seebeck coefficient, electrical resistivity, thermal conductivity and Hall coefficient were measured from 80 to 380 K in order to investigate the influence of PbTe nanoparticles on the thermoelectric performance of nanocomposites. The Seebeck coefficients and electrical resistivities of nanocomposites decrease with increasing PbTe nanoparticle concentration due to an increased hole concentration. The lattice thermal conductivity decreases with the addition of PbTe nanoparticles but the total thermal conductivity increases due to the increased electronic thermal conductivity. We conclude that the presence of nanosized PbTe in the bulk Bi_2−xSb_xTe₃ matrix results in a collateral doping effect, which dominates transport properties. This study underscores the need for immiscible systems to achieve the decreased thermal transport properties possible from nanostructuring without compromising the electronic properties.     

Growth and some properties of Sc2AlB6 crystal obtained from the solution in aluminum melt

Crystals of Sc₂AlB₆ were grown using scandium oxide and elemental boron as starting materials in a self-component aluminum solution under an argon atmosphere. The growth conditions for obtaining single crystals of relatively large size were investigated. Sc₂AlB₆ single crystals were obtained in the form of prisms extending in the b-axis direction. The largest Sc₂AlB₆ crystals prepared had maximum dimensions of about 0.4×0.4×4.2 mm³. The values of the Vickers microhardness and the electrical resistivity of Sc₂AlB₆ crystals are 12.7±0.8 GPa and 43±8 μΩ cm, respectively. The oxidation of Sc₂AlB₆ crystals starts at about 773°C, and the weight gain after TG determination is 12.9 mass% at 1200°C. The oxidation products of Sc₂AlB₆ crystals could not determined.     

Thermoelectric properties of Cu-doped n-type (Bi2Te3)0.9–(Bi2−xCuxSe3)0.1(x=0–0.2) alloys

n-Type (Bi₂Te₃)_0.9–(Bi_2−xCu_xSe₃)_0.1 (x=0–0.2) alloys with Cu substitution for Bi were prepared by spark plasma-sintering technique and their structural and thermoelectric properties were evaluated. Rietveld analysis reveals that approximate 9.0% of Bi atomic sites are occupied by Cu atoms and less than 4.0 wt% second phase Cu_2.86Te₂ precipitated in the Cu-doped parent alloys. Measurements show that an introduction of a small amount of Cu (x0.1) can reduce the lattice thermal conductivity (κ_L), and improve the electrical conductivity and Seebeck coefficient. An optimal dimensionless figure of merit (ZT) value of 0.98 is obtained for x=0.1 at 417 K, which is obviously higher than those of Cu-free Bi₂Se_0.3Te_2.7 (ZT=0.66) and Ag-doped alloys (ZT=0.86) prepared by the same technologies.     

Defect structure of Sb2−xMnxTe3 single crystals

Incorporation of the transition metal elements in the tetradymite structure of Sb₂Te₃ has a strong influence on electronic properties. Recent studies have indicated that Mn substitutes on the Sb sublattice increases the carrier concentration of holes. However, the doping efficiency of Mn appears rather low in comparison to what it should be based on the measurements of magnetization, structural analysis, and transport properties. In this paper we address this issue by making detailed studies of the Hall effect and electrical resistivity and we explain the results with the aid of a model that takes into account interactions of the Mn impurity with the native defects in antimony telluride. Specifically, we find that Mn atoms interact with antisite defects (antimony atoms located on the tellurium sublattice), a process that decreases the density of antisite centers and generates free electrons. These, in turn, recombine with holes and thus decrease their concentration and the apparent Mn doping efficiency.     

Preparation and photoluminescence properties of RE:Na3La9O3(BO3)8 (RE=Er, Yb) crystals

Using Na₂CO₃-H₃BO₃-NaF as fluxes, transparent RE:Na₃La₉O₃(BO₃)₈ (abbr. RE:NLBO, RE=Er, Yb) crystals have been grown by the top seed solution growth (TSSG) method. The X-ray powder diffraction analysis shows that the RE:NLBO crystals have the same structure with NLBO. The element contents were determined by molar to be 0.64% Er³⁺ in Er:NLBO, 2.70% Yb³⁺ in Yb:NLBO, respectively. The polarized absorption spectra of RE:NLBO have been measured at room temperature and show that both Er:NLBO and Yb:NLBO have a strong absorption bands near 980 nm with wide FWHM (Full Wave at Half Maximum) (21 nm for Er:NLBO and 25 nm for Yb:NLBO). Fluorescence spectra have been recorded. Yb:NLBO has the emission peaks at 985 nm, 1028 nm and 1079 nm and the emission peak of Er:NLBO is at 1536 nm. Spectral parameters have been calculated by the Judd-Ofelt theory for Er:NLBO and the reciprocity method for Yb:NLBO, respectively. The calculated values show that Er:NLBO is a candidate of 1.55 μm laser crystals and Yb:NLBO is a candidate for self-frequency doubling crystal.     

Single-crystal synthesis, structure analysis, and physical properties of the calcium ferrite-type NaxTi2O4 with 0.558<x<1

Single crystals of calcium ferrite CaFe₂O₄-type NaTi₂O₄ having millimeter-sized needle shapes were synthesized by a reaction of Na metal and TiO₂ in a sealed iron vessel at 1473 K. Sodium-deficient Na_xTi₂O₄ single crystals with 0.558<x<1 were successfully synthesized by a topotactic oxidation reaction using NaTi₂O₄ single crystals as parent materials. The crystal structures of Na_xTi₂O₄ with x=0.970, 0.912, 0.799, 0.751, 0.717, 0.686, 0.611, and 0.558 were determined by the single-crystal X-ray diffraction method. The basic framework constructed by the Ti1O₆ and Ti2O₆ double rutile chains was maintained in these Na_xTi₂O₄ compounds. Based on the results of bond valence analysis, we speculated that the Ti1 sites are preferentially occupied by Ti³⁺ cations over the compositional range of 0.8<x<1, while both the Ti1 and Ti2 sites are randomly occupied by Ti³⁺ and Ti⁴⁺ cations at x=0.558. Magnetic susceptibility data indicated that the broad maximum around 40 K observed in as-grown NaTi₂O₄ is suppressed by an Na deficiency and vanishes in Na_0.717Ti₂O₄. The electrical resistivity increased with the Na deficiency; however, it was still semiconductive in Na_0.799Ti₂O₄.     

Anomalous charge transport in CeB6

The comprehensive study of conductivity σ, Hall coefficient R_H and Seebeck coefficient S has been carried out on high-quality single crystals of CeB₆ in a wide range of temperatures 1.8-300 K. An anomalous behavior of all transport characteristics (σ, R_H, S) was found for the first time in the vicinity of T^*≈80 K. The strong decrease of conductivity σ as well as the unusual asymptotic behavior of Seebeck coefficient S(T)∼−ln T observed below T^* allowed us to conclude in favor of crossover between different regimes of charge transport in CeB₆. The pronounced change of Hall mobility μ_H, which diminishes from the maximum value of 20 cm²/(V s) at T^* to the values of ∼6 cm²/(V s) at T∼10 K, seems to be attributed to the strong enhancement of charge carriers scattering due to fast spin fluctuations on Ce-sites. The low-temperature anomalies of the charge transport characteristics are compared with the predictions of the Kondo-lattice model.