Comparative study of LiMn2O4 thin film cathode grown at high, medium and low temperatures by pulsed laser deposition

LiMn₂O₄ thin films with different crystallizations were respectively grown at high, medium and low temperatures by pulsed laser deposition (PLD). Structures, morphologies and electrochemical properties of these three types of thin films were comparatively studied. Films grown at high temperature (?873 K) possessed flat and smooth surfaces and were highly crystallized with different textures and crystal sizes depending on the deposition pressure of oxygen. However, films deposited at low temperature (473 K) had rough surfaces with amorphous characteristics. At medium temperature (673 K), the film was found to consist mainly of nano-crystals less than 100 nm with relatively loose and rough surfaces, but very dense as observed from the cross-section. The film deposited at 873 K and 100 mTorr of oxygen showed an initial discharge capacity of 54.3 μAh/cm² μm and decayed at 0.28% per cycle, while the amorphous film had an initial discharge capacity of 20.2 μAh/cm² μm and a loss rate of 0.29% per cycle. Compared with the highly crystallized and the amorphous films, nano-crystalline film exhibited higher potential, more capacity and much better cycling stability. As high as 61 μAh/cm² μm of discharge capacity can be achieved with an average decaying rate of only 0.032% per cycle up to 500 cycles. The excellent performance of nano-crystalline film was correlated to its microstructures in the present study.     

The structure and tribological properties of aluminum/carbon nanocomposite thin films synthesized by reactive magnetron sputtering

Hydrogenated nanocomposite aluminum/carbon thin films (Al/a‐C:H) were fabricated on stainless steel and silicon wafer substrates via unbalanced reactive magnetron sputtering from an Al target in CH₄/Ar plasma. The composition and structure of Al/a‐C:H films were investigated by high‐resolution transmission electron microscope (HRTEM), XPS and micro‐Raman spectroscopy. Nanoindenter, interferometer and ball‐on‐disc tribometer were carried out to evaluate the hardness, internal stress and tribological properties of Al/a‐C:H films. HRTEM observations confirmed that the metallic Al nanocrystallites were uniformly dispersed in the amorphous carbon matrix. XPS and Raman analyses indicated that the sp² content increased with the increase of Al content in the films. Nanoindenter and interferometer tests exhibited that the uniform incorporation of Al nanocrystallites can diminish drastically the magnitude of internal stress with maintaining the higher hardness of as‐deposited films. Especially, the ball‐on‐disc tribometer measurements revealed that the nanocomposite film with 2.3 at.% Al content exhibited relatively better wear resistance and self‐lubrication performance with a friction coefficient of 0.06 and wear rate of 3.1 × 10^?16 m³/ N·m under ambient air, which can be attributed to the relatively higher hardness, the formation of continuous graphitized transfer film on counterface and the reduced reaction of oxygen with carbon. Copyright © 2010 John Wiley & Sons, Ltd.     

Electrochromism in Materials Prepared by the Sol-Gel Process

Electrochromism is defined as the persistent but reversible optical change (usually transmission) produced electrochemically. The preparation by the sol-gel process of thin films made of amorphous or crystalline nanoparticles of WO₃, V₂O₅, Nb₂O₅, TiO₂, CeO₂, Fe₂O₃ and mixed compounds such as WO₃−TiO₂, CeO₂−TiO₂, CeO₂−SnO₂, have opened remarkable new opportunities for obtaining electrochromic layers exhibiting large optical transmission variation in the UV, visible or infrared range and acceptable kinetics under H⁺ or Li⁺ insertion. In this paper we give an overview of what has been recently achieved in this field, with emphasis for cathodic electrochromic coatings of Nb₂O₅ and TiO₂ composition. Finally we stress the future developments in this fast growing field.     

Photoluminescence properties of BaMoO4 amorphous thin films

BaMoO₄ amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO₄ was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO₄ was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 °C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 °C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba²⁺ and electronic transitions within MoO²⁻₄, respectively. The optical band gaps of BaMoO₄ were 3.38 and 2.19 eV, for crystalline (600 °C/2 h) and amorphous (200 °C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO₄ amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications.     

Optimization of the synthesis and characterizations of chemical bath deposited Cu2S thin films

Semiconducting copper sulphide (Cu₂S) thin films have been deposited on various substrates (SnO₂:F/glass, glass) by the simple and economical chemical bath deposition technique. The depositions were carried out during a deposition time of about 32.5 min in the pH range of 9.4 to 11. The synthesized Cu₂S thin films were characterized using various techniques without any annealing treatment. X-ray diffraction study shows that Cu₂S films exhibit the best crystallinity for pH = 10.2. For this pH value, Auger electron spectroscopy investigations show that Cu₂S thin films grown on an SnO₂/glass substrate exhibit stochiometric composition with [Cu]/[S] concentrations ratio equal to 2.02. Using the Kelvin method, the work function difference (Ф_material– Ф_probe) for the Cu₂S films deposited on SnO₂/glass substrates at the optimum pH value was found to be equal to 145 meV. Hall measurements confirm the p-type electrical conductivity of the obtained films. The electrical resistivity was of the order of 3.85 × 10⁻⁴ Ω-cm. The transmission and reflection coefficients vary in the range of [35–60] % and [5–15] % respectively, in the visible range, and the band gap energy is about 2.37 eV.     

Lithium Intercalation into Nanostructured Films Based on Oxides of Tin and Titanium

The lithium intercalation into nanostructured films of mixed tin and titanium oxides is studied. X-ray diffraction and Moessbauer spectroscopy analyses reveal that films consist of a rutile solid solution (Sn, Ti)O₂ and an amorphous tin oxide enriched with Sn²⁺ ions. The films specific capacity during the first cathodic polarization in a 1 M lithium imide solution in dioxolane is 200–700 mA h/g, of which nearly one half is the irreversible capacity. During the second cycle, the latter is 15% of that in the first cycle. As the films are thin (<1 m), their capacity does not depend on the current density at 1–80 mA/g. During the electrode cycling, the capacity decreases by 2 mA h/g each cycle. The effective lithium diffusion coefficient, determined by a pulsed galvanostatic method, is 10^–11 cm²/s; it slightly increases with the film lithiation. During the first cycle, the amorphous phase of oxides is reduced to tin metal, the solid solution (Sn, Ti)O₂ decomposes, SnO₂ disperses to become an x-ray amorphous phase, and TiO₂ precipitates as a rutile phase. Lithium reversibly incorporates into the tin metal, yielding Li _y Sn, and into a disperse SnO₂ phase, yielding Li _x SnO₂.     

Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique

Al doped SnO₂ thin films have been synthesized by a sol-gel dip coating technique with different percentages of Al on glass and silicon substrates. X-ray diffraction studies confirmed the proper phase formation in the films and atomic percentage of aluminium doping in the films was obtained by energy dispersive X-ray studies. SEM studies showed the particle sizes lying in the range 100–150 nm for the undoped films and it decreased with increase of Al doping. Optical transmittance spectra of the films showed high transparency (∼80%) in the visible region and the transparency increases with the increase of Al doping in the films. The direct allowed bandgap of the films have been measured for different Al concentration and they lie within the range of 3.87–4.21 eV. FTIR studies depicted the presence of Sn–O, Al–O, bonding within the films. The room temperature electrical conductivities of the films are obtained in the range of 0.21 S cm⁻¹ to 1.36 S cm⁻¹ for variation of Al doping in the films 2.31–18.56%. Room temperature Seebeck coefficients, S_RT of the films were found in the range +56.0 μVK⁻¹ to −23.3 μVK⁻¹ for variation of Al doping in the films 18.56–8.16%. It is observed that the Seebeck coefficient changes its sign at 12.05% of Al in the films indicating that below 12.05% of Al doping, SnO₂:Al behaves as an n-type material and above this percentage it is a p-type material.     

The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

A sol-gel route for the development of rare-earth aluminum borate nanopowders and transparent thin films

A new sol-gel route was applied to obtain Y_0.9Er_0.1Al₃(BO₃)₄ crystalline powders and amorphous thin films by using Al(acac)₃, B(OPrⁱ)₃, Y(NO₃)₃·6H₂O, and Er(NO₃)₃·5H₂O as starting materials dissolved in propionic acid and ethyl alcohol mixtures. Our study shows that propionic acid acts as good chelant agent for yttrium and erbium ions while ethyl alcohol allows to dissolve Al(acac)₃. This process makes the resulting sols very stable to obtain homogeneous gels and transparent amorphous thin films. In addition, the propionic acid prevents the sol precipitation, making easy porous- and crack-free thin film depositions. Chemical reactions involved in the complexation were discussed. As-prepared powders and films are amorphous and present a good thermal stability due to their high glass transition (746 °C) and crystallization temperatures (830 °C). This new sol-gel route showed to be adequate to obtain dense and crack-free thin films free of organic and hydroxyl groups that can be considered as promising materials to be used in integrated optical systems.     

Hierarchical SnO2/Carbon Nanofibrous Composite Derived from Cellulose Substance as Anode Material for Lithium‐Ion Batteries

A hierarchical fibrous SnO₂/carbon nanocomposite composed of fine SnO₂ nanocrystallites immobilized as a thin layer on a carbon nanofiber surface was synthesized employing natural cellulose substance as both scaffold and carbon source. It was achieved by calcination/carbonization of the as‐deposited SnO₂‐gel/cellulose hybrid in an argon atmosphere. As being employed as an anode material for lithium‐ion batteries, the porous structures, small SnO₂ crystallite sizes, and the carbon buffering matrix possessed by the nanocomposite facilitate the electrode–electrolyte contact, promote the electron transfer and Li⁺ diffusion, and relieve the severe volume change and aggregation of the active particles during the charge/discharge cycles. Hence, the nanocomposite showed high reversible capacity, significant cycling stability, and rate capability that are superior to the nanotubular SnO₂ and SnO₂ sol–gel powder counter materials. For such a composite with 27.8 wt % SnO₂ content and 346.4 m² g^?1 specific surface area, a capacity of 623 mAh g^?1 was delivered after 120 cycles at 0.2 C. Further coating of the SnO₂/carbon nanofibers with an additional carbon layer resulted in an improved cycling stability and rate performance.     

Promotion of PtRu/C anode catalysts for ethanol oxidation reaction by addition of Sn modifier

PtRu/C anode electrocatalysts modified by Sn were prepared for ethanol oxidation reaction (EOR). Their phase structures, surface species, surface compositions, and EOR activities were characterized by XRD, XPS, temperature-programmed reduction (TPR), and CV, respectively. It has been found that in the PtRu/Sn_xC and PtSn/C alloy catalysts, some Sn alloyed with Pt to form Pt–Sn phase existed as the metallic state, however, the excess Sn existed as the amorphous SnO or crystalline SnO₂. Surface analyses and electrochemical measurements suggest that the surface Ru and amorphous SnO instead of the crystalline SnO₂ are important species for the promotion of EOR. As a result, compared with PtSn/C, the I₀₆ was enhanced about 200% for the PtRu/C electrocatalyst with 10 wt% of Sn modification.     

Optical fiber evanescent wave absorption spectrometry of nanocrystalline tin oxide thin films for selective hydrogen sensing in high temperature gas samples

SnO₂ nanocrystalline material was prepared with a sol-gel process and thin films of the nanocrystalline SnO₂ were coated on the surface of bent optical fiber cores for gas sensing. The UV/vis absorption spectrometry of the porous SnO₂ coating on the surface of the bent optical fiber core exposed to reducing gases was investigated with a fiber optical spectrometric method. The SnO₂ film causes optical absorption signal in UV region with peak absorption wavelength at around 320 nm when contacting H₂-N₂ samples at high temperatures. This SnO₂ thin film does not respond to other reducing gases, such as CO, CH₄ and other hydrocarbons, at high temperatures within the tested temperature range from 300 °C to 800 °C. The response of the sensing probe is fast (within seconds). Replenishing of the oxygen in tin oxide was demonstrated by switching the gas flow from H₂-N₂ mixture to pure nitrogen and compressed air. It takes about 20 min for the absorption signal to decrease to the baseline after the gas sample was switched to pure nitrogen, while the absorption signal decreased quickly (in 5 min) to the baseline after switching to compressed air. The adhesion of tin oxide thin films is found to be improved by pre-coating a thin layer of silica gel on the optical fiber. Adhesion increases due to increase interaction of optical fiber surface and the coated silica gel and tin oxide film. Optical absorption spectra of SnO₂ coating doped with 5 wt% MoO₃ were observed to change and red-shifted from 320 nm to 600 nm. SnO₂ thin film promoted with 1 wt% Pt was found to be sensitive to CH₄ containing gas.     

Influence of the crystallinity on the Li+ intercalation process in Nb2O5 films

Nb₂O₅ thin films were prepared by the Pechini method. The effect of the film crystallinity on the electrochemical and electrochromic properties was investigated. A relationship between the crystalline structure and the Li⁺ intercalation/extraction process, stability and kinetics was observed. A significant decrease in the electrochemical response was observed as a function of the number of cycles for films treated at 400 and 450 °C. However, as the calcination temperature increases this effect disappears. XRD studies shown that at 400 °C, the material is amorphous, evolving to orthorhombic phase. The transmittance variation as well as the coloration efficiency increases as the temperature is increased. In the initial cycles the intercalation charge is higher for the amorphous oxide than for the orthorhombic phase. However, the variation in the optical density is small. On the other hand, the charge of the orthorhombic phase oxide does not change. These results suggest that there are two different processes associated with Li⁺ intercalation, but only one of them leads to the coloration process.     

Photoelectrochemical behavior of coupled SnO2|CdSe nanocrystalline semiconductor films

A photoelectrochemical cell with a coupled SnO₂|CdSe nanocrystalline semiconductor electrode has been prepared by sequential deposition of SnO₂ and CdSe films onto an optically transparent electrode (OTE), and its photoelectrochemical behavior has been studied. The results show that the coupling of CdSe with SnO₂ leads to an improvement in the performance of OTE|SnO₂|CdSe over OTE|CdSe cells in terms of increased incident photon-to-current conversion efficiency, increased stability and smaller reversal of current. The favorable positioning of the energy bands of SnO₂ and CdSe is responsible for the above observations. Various photoelectrochemical parameters of the OTE|SnO₂|CdSe cell obtained for an incident light power of 0.31 mW cm⁻² at 470nm, are as follows: I_sc ≈ 25–30 μA cm⁻², V_oc ≈ 0.5–0.6 V, ƒƒ = 0.47 and a power conversion efficiency of about 2.25%.     

SnOx thin films with tunable conductivity for fabrication of p–n homo‐junction

Tin oxide (SnO_x) has been widely used for the fabrication of transparent and flexible devices because of its excellent optical and electronic properties. In this work, we established a methodology for the synthesis of SnO_x thin films with p‐type and n‐type tunable conductivity by direct currecnt (DC) magnetron sputtering. The SnO_x thin films changed from p‐type to n‐type by increasing the relative oxygen partial pressure (ppO₂) from 4.8% to 18.5% and by varying the working pressure between 1.8 and 2.5 mTorr. The SnO_x thin films were annealed at 160°C, 180°C, and 200°C for 30 min to promote the formation of the desired crystalline structures. At the annealing temperature of 180°C in air ambient, the SnO_x thin films showed a tetragonal structure with Sn traces. Having found the optimal conditions, we deposited both types of SnO_x thin films with the same tetragonal structure and similar chemical stoichiometry. Also, the conditions to obtain thin films with the highest mobility values for p‐type (1.10 cm²/Vs) and n‐type (22.20 cm²/Vs) were used for fabricating the device. Finally, the implementation of a SnO_x‐based p–n diode was demonstrated using transparent SnO_x thin films developed in this work, illustrating their potential use in transparent electronics.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

XPS/EXAFS study of cycleability improved LiMn2O4 thin film cathodes prepared by solution deposition

The influence of Sn substitution in LiMn₂O₄ thin films as a cathode has been studied via solution deposition to improve the electrochemical performance of thin film lithium batteries. LiSn_0.025Mn_1.95O₄ thin films showed the most promising performance, i.e. a high capacity retention of 77% at 10 C after the 500th cycle, due to the increased average Mn valence state. The thin films of LiSn_x/2Mn_2?xO₄ (x ? 0.10) showed significant precipitation of SnO₂ and SnO after the cycling evaluation.     

Size-controlled synthesis and characterization of quantum-size SnO2 nanocrystallites by a solvothermal route

By using ethylenediamine as both an alkali and ligand, quantum size SnO₂ nanocrystallites were synthesized with a solvothermal route. The transmission electron micrographs (TEM) were employed to characterize the morphologies of the products. The crystal sizes of the as-synthesized SnO₂ were ranged form 2.5 to 3.6 nm. The crystal structure and optical properties of the products were investigated by X-ray diffraction, Fourier transform infrared spectroscopy, optical absorption spectra, photoluminescence and Raman spectra. Anisotropic growth of the SnO₂ nanocrystallites was observed by altering the solvent from water to ethanol. The SnO₂ nanocrystal showed apparent quantum confinement effects. Finally, the mechanism for the formation of quantum size SnO₂ was also discussed.     

Concurrent synthesis of SnO/SnO<Subscript>2</Subscript> nanocomposites and their enhanced photocatalytic activity

The SnO/SnO₂ nanocomposites were synthesized using semisolvothermal reaction technique. These nanocomposites were prepared using different combination of solvents viz., ethanol, water, and ethylene glycol at 180 °C for 24 h. The synthesized nanocomposites were analyzed with various characterization techniques. Structural analysis indicates the formation of tetragonal phase of SnO₂ for the sample prepared in ethanol, whereas for other solvent combinations, the mixture of SnO and SnO₂ having tetragonal crystal structures were observed. The optical study shows enhanced absorbance in the visible region for all the prepared SnO/SnO₂ nanocomposites. The observed band gap was found to be in the range of 3.0 to 3.25 eV. Microstructural determinations confirm the formation of nanostructures having spherical as well as rod-like morphology. The size of nanoparticles in ethanol-mediated solvent was found to be in the range of 5 to 7 nm. Thermogravimetric analysis indicate the weight gain around 1.3 wt% confirming the conversion of SnO to SnO₂ material. The photocatalytic activity of synthesized nanocomposites was evaluated by following the aqueous methylene blue (MB) degradation. The sample prepared in ethylene glycol-mediated solvent showed highest photoactivity having apparent rate constant (K_app) 0.62 × 10^?2 min^?1.     

Fine pattern fabrication on SnO2:Sb thin films formed by the sol–gel process

The effects of UV irradiation on the properties of Sb⁵⁺ doped gel films were studied, which were prepared from stannic chloride (SnCl₄·5H₂O) and sodium alkoxide (NaOR) modified with benzytone (BzAcH). It was found that the absorption peak at around 335 nm due to the π → π* transition showed the formation of a chelate ring to Sn. The intensity of the absorption band decreased with UV light irradiation at 365 nm from a high‐pressure mercury lamp (250W). This finding showed that the SnO₂:Sb gel films modified with BzAcH were photosensitive to UV light. Additionally, this finding was applied to the fabrication of patterns on the SnO₂:Sb thin films. A gel film was irradiated through a mask and leached in water. Then a positive pattern was formed on the SnO₂:Sb thin films attached to the substrate. After heat treatment, the SnO₂:Sb gel films changed into transparent conductive films with an average conductivity of 1.20 × 10^?2Ω cm and with a transmission of 97.1%. Copyright © 2006 John Wiley & Sons, Ltd.