Synthesis, crystal structure and thermoelectric properties of a new carbide Zr2[Al3.56Si0.44]C5

A new quaternary layered carbide, Zr₂[Al_3.56Si_0.44]C₅, has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and thermopower and electrical conductivity measurements. The crystal structure was successfully determined using direct methods, and further refined by the Rietveld method. The crystal is trigonal (space group R3m, Z=3) with lattice dimensions of a=0.331059(5), c=4.09450(5) nm and V=0.38864(1) nm³. The final reliability indices calculated from the Rietveld refinement were R_wp=6.24%, R_p=4.21% and R_B=0.82%. The crystal structure is composed of electroconductive NaCl-type ZrC slabs separated by Al₄C₃-type [Al_3.56Si_0.44]C₃ layers. This material had thermoelectric properties superior to those of the ternary layered carbides Zr₂Al₃C₄ and Zr₃Al₃C₅, with the power factor reaching 7.6×10⁻⁵W m⁻¹ K⁻².     

Syntheses, crystal structures and Si solubilities of new layered carbides Zr2Al4C5 and Zr3Al4C6

Two types of new ternary carbides, Zr₂Al₄C₅ and Zr₃Al₄C₆, have been synthesized and characterized by X-ray powder diffraction. The crystal structures were refined from laboratory X-ray powder diffraction data (CuKα₁) using the Rietveld method. These carbides form a homologous series with the general formula (ZrC)_mAl₄C₃ (m=2 and 3). The crystal structures can be regarded as intergrowth structures where the Al₄C₃-type [Al₄C₄] layers are the same, while the NaCl-type [Zr_mC_m+1] layers increase in thickness with increasing m value. The new carbides are most probably the end members of continuous solid-solutions (ZrC)_m[Al_4−xSi_x]C₃ with 0?x?0.44.     

Homoatomic Clustering in the Intermediate Valence Compounds Yb1−yAl3−xSix and Yb1−yAl3−xGex

Two new phases, Yb_1−xAl_3−xSi_x and Yb_1−yAl_3−xGe_x, were found by systematic investigations of the according ternary systems. The crystal structures of Yb_1−yAl_2.8Si_0.2 and Yb_1−yAl_2.8Ge_0.2 (defect HT-PuAl₃ type) were studied by X-ray powder methods (CuKα₁ radiation, λ=1.54056 Å, hexagonal system, space group P6₃/mmc (No. 194), a=6.009(1) and 6.015(1) Å, c=14.199(2) and 14.241(5) Å, V=444.0(2) and 446.2(3) ų, 93 and 92 reflections, and 8200 and 8000 profile points for silicide and germanide, respectively). Full profile refinements with 11 and 13 structural parameters resulted in R_I=0.049 and 0.054, and R_p=0.088 and 0.104, respectively. The ternary structures are distorted closest packings in comparison with the binary YbAl₃ compound with AuCu₃-type structure. They are characterized by the formation of Al₃-, Si₃-, and Ge₃-homoatomic clusters and aluminum networks. Magnetization measurements show that both the silicide and germanide are valence fluctuation compounds with enhanced electronic density of states at the Fermi level similar to the binary YbAl₃. The characteristic maximum of the magnetic susceptibility increases from ≈120 K for YbAl₃ to ≈140 K for Yb_1−yAl_2.8Si_0.2or Yb_1−yAl_2.8Ge_0.2 and further to ≈150 K for Yb_1−yAl_2.75Si_0.25. The S-shape of the electrical resistivity curves is also characteristic of valence fluctuations.     

Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 °C) and Sr-Cu-Si (800 °C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi₃ (BaNiSn₃-type) and SrNi_9−xSi_4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni_xSi_1−x)₂ (AlB₂-type). The crystal structure of SrNi_9−xSi_4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn₁₃-type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi_5.5Si_6.5□_1.0. Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu_2−xSi_2+x (ThCr₂Si₂-type), Sr(Cu_xSi_1−x)₂ (AlB₂-type), SrCu_9−xSi_4+x (0≤x≤1.0; CeNi_8.5Si_4.5-type) and SrCu_13−xSi_x (4≤x≤1.8; NaZn₁₃-type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems.Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba.     

Crystal structure and physical properties of the novel ternary intermetallics URuSi3−x and U3Ru2Si7

Two novel ternary intermediate phases, namely URuSi_3−x (x=0.11) and U₃Ru₂Si₇ were found in the Si-rich part of the U-Ru-Si phase diagram. Single crystal X-ray diffraction measurements, carried out at room temperature, indicated that URuSi_3−x crystallizes in its own tetragonal type structure (space group P4/nmm, no. 129; unit cell parameters: a=12.108(1) Å and c=9.810(1) Å), being a derivative of the BaNiSn₃-type structure. U₃Ru₂Si₇ adopts in turn a disordered orthorhombic La₃Co₂Sn₇-type structure (space group Cmmm, no. 65; unit cell parameters: a=4.063(1) Å, b=24.972(2) Å and c=4.072(1) Å). As revealed by magnetization, electrical resistivity and specific heat measurements, both compounds order magnetically at low temperatures. Namely URuSi_3−x is a ferromagnet with T_C=45 K, and U₃Ru₂Si₇ shows ferrimagnetic behavior below T_C=29 K.     

Site preference and vibrational properties of R3T4+xAl12−x (R=Y, Ce, Gd, U, Th; T=Fe, Ru)

The crystal structures and phase stability of the ternary alloys R₃T_4+xAl_12−x (R=Y, Ce, Gd, U, Th; T=Fe, Ru) have been investigated using the interatomic potentials obtained by the lattice inversion method. These compounds crystallize in the hexagonal Gd₃Ru₄Al₁₂-type structure and the calculated lattice constants correspond well with the experiments. Among the four different kinds of Al sites in the structure, the most preferential sites for Fe atoms or Ru atoms are 6h sites. The properties related to lattice vibration, such as the phonon density of states (DOS) and Debye temperature of R₃Fe₄Al_12, have been evaluated. A qualitative analysis is carried out with the relevant potentials for the vibrational modes, which makes it possible to predict some thermodynamic properties.     

Synthesis and structural characterization of a new aluminum oxycarbonitride, Al5(O, C, N)4

A new aluminum oxycarbonitride, Al₅(O_xC_yN_4−x−y) (x∼1.4 and y∼2.1), has been synthesized and characterized by X-ray powder diffraction, transmission electron microscopy and electron energy loss spectroscopy (EELS). The title compound was found to be hexagonal with space group P6₃/mmc, Z=2, and unit-cell dimensions a=0.328455(6) nm, c=2.15998(3) nm and V=0.201805(6) nm³. The atom ratios O:C:N were determined by EELS. The final structural model, which is isomorphous with that of (Al_4.4Si_0.6)(O_1.0C_3.0), showed the positional disordering of one of the three types of Al sites. The maximum-entropy method-based pattern fitting (MPF) method was used to confirm the validity of the split-atom model, in which conventional structure bias caused by assuming intensity partitioning was minimized. The reliability indices calculated from the MPF were R_wp=6.94% (S=1.22), R_p=5.34%, R_B=1.35% and R_F=0.76%. The crystal was an inversion twin. Each twin-related individual was isostructural with Al₅C₃N (space group P6₃mc, Z=2).     

On the system cerium-platinum-silicon

Phase relations in the ternary system Ce-Pt-Si have been established for the isothermal section at 800 °C based on X-ray powder diffraction, metallography, scanning electron microscopy (SEM) and electron probe microanalysis (EPMA) techniques on about 120 alloys, which were prepared by various methods employing arc-melting under argon or powder reaction sintering. Nineteen ternary compounds were observed. Atom order in the crystal structures of τ₁₈-Ce₅(Pt,Si)₄ (Pnma; a=0.77223(3) nm, b=1.53279(8) nm c=0.80054(5) nm), τ₃-Ce₂Pt₇Si₄ (Pnma; a=1.96335(8) nm, b=0.40361(4) nm, c=1.12240(6) nm) and τ₁₀-CePtSi₂ (Cmcm; a=0.42943(2) nm, b=1.67357(5) nm, c=0.42372(2) nm) was determined by direct methods from X-ray single-crystal CCD data and found to be isotypic with the Sm₅Ge₄-type, the Ce₂Pt₇Ge₄-type and the CeNiSi₂-type, respectively. Rietveld refinements established the atom arrangement in the structures of Pt₃Si (Pt₃Ge-type, C2/m, a=0.7724(2) nm, b=0.7767(2) nm, c=0.5390(2) nm, β=133.86(2)°), τ₁₆-Ce₃Pt₅Si (Ce₃Pd₅Si-type, Imma, a=0.74025(8) nm, b=1.2951(2) nm, c=0.7508(1) nm) and τ₁₇-Ce₃PtSi₃ (Ba₃Al₂Ge₂-type, Immm, a=0.41065(5) nm, b=0.43221(5) nm, c=1.8375(3) nm). Phase equilibria in Ce-Pt-Si are characterised by the absence of cerium solubility in platinum silicides. Cerium silicides and cerium platinides, however, dissolve significant amounts of the third component, whereby random substitution of the almost equally sized atom species platinum and silicon is reflected in extended homogeneous regions at constant Ce content such as for τ₁₃-Ce(Pt_xSi_1−x)₂, τ₆-Ce₂Pt_3+xSi_5−x or τ₇-CePt_2−xSi_2+x.     

The ternary system cerium-rhodium-silicon

Phase relations have been established in the ternary system Ce-Rh-Si for the isothermal section at 800 °C based on X-ray powder diffraction and EPMA on about 80 alloys, which were prepared by arc melting under argon or by powder reaction sintering. From the 25 ternary compounds observed at 800 °C 13 phases have been reported earlier. Based on XPD Rietveld refinements the crystal structures for 9 new ternary phases were assigned to known structure types. Structural chemistry of these compounds follows the characteristics already outlined for their prototype structures: τ₇—Ce₃RhSi₃, (Ba₃Al₂Ge₂-type), τ₈—Ce₂Rh_3−xSi_3+x (Ce₂Rh_1.35Ge_4.65-type), τ₁₀—Ce₃Rh_4−xSi_4+x (U₃Ni₄Si₄-type), τ₁₁—CeRh₆Si₄ (LiCo₆P₄-type), τ₁₃—Ce₆Rh₃₀Si_19.3 (U₆Co₃₀Si₁₉-type), τ₁₈—Ce₄Rh₄Si₃ (Sm₄Pd₄Si₃-type), τ₂₁—CeRh₂Si (CeIr₂Si-type), τ₂₂—Ce₂Rh_3+xSi_1−x (Y₂Rh₃Ge-type) and τ₂₄—Ce₈(Rh_1−xSi_x)₂₄Si (Ce₈Pd₂₄Sb-type). For τ₂₅—Ce₄(Rh_1−xSi_x)₁₂Si a novel bcc structure was proposed from Rietveld analysis. Detailed crystal structure data were derived for τ₃—CeRhSi₂ (CeNiSi₂-type) and τ₆—Ce₂Rh₃Si₅ (U₂Co₃Si₅-type) by X-ray single crystal experiments, confirming the structure types. The crystal structures of τ₄—Ce₂₂Rh₂₂Si₅₆, τ₅—Ce₂₀Rh₂₇Si₅₃ and τ₂₃—Ce_33.3Rh_58.2−55.2Si_8.5−11.5 are unknown. High temperature compounds with compositions Ce₁₀Rh₅₁Si₃₃ (U₁₀Co₅₁Si₃₃-type) and CeRhSi (LaIrSi-type) have been observed in as-cast alloys but these phases do not participate in the phase equilibria at 800 °C.     

Synthesis and structural characterization of Al4Si2C5-homeotypic aluminum silicon oxycarbide, (Al6−xSix)(OyC5−y) (x∼0.8 and y∼1.6)

We have prepared a new layered oxycarbide, [Al_5.25(5)Si_0.75(5)][O_1.60(7)C_3.40(7)], by isothermal heating of (Al_4.4Si_0.6)(O_1.0C_3.0) at 2273 K near the carbon-carbon monoxide buffer. The crystal structure was characterized using X-ray powder diffraction, transmission electron microscopy and energy dispersive X-ray spectroscopy (EDX). The title compound is trigonal with space group R3?m (centrosymmetric), Z=3, and hexagonal cell dimensions a=0.32464(2) nm, c=4.00527(14) nm and V=0.36556(3) nm³. The atom ratios Al:Si were determined by EDX, and the initial structural model was derived by the direct methods. The final structural model showed the positional disordering of one of the three types of Al/Si sites. The reliability indices were R_wp=4.45% (S=1.30), R_p=3.48%, R_B=2.27% and R_F=1.25%. The crystal is composed of three types of domains with nearly the same fraction, one of which has the crystal structure of space group R3¯m. The crystal structure of the remaining two domains, which are related by pseudo-symmetry inversion, is noncentrosymmetric with space group R3m.     

Solid state phase equilibria in the Gd-Si-B system at 1270 K

Solid state phase equilibria in the ternary Gd-Si-B phase diagram have been proposed at 1270 K using X-ray diffraction, scanning electron microscopy and electron probe microanalysis. Prior to this work, the binary systems Gd-B, Gd-Si and Si-B have also been reinvestigated. The main characteristic of the ternary diagram is the occurrence of two new ternary compounds Gd₅Si₂B₈ and Gd₅Si₃B_0.64. The former crystallizes in tetragonal symmetry, space group P4/mbm with unit cell parameters a=7.2665(3), c=8.2229(7) Å, the second one presents hexagonal symmetry, space group P6₃/mcm with unit cell parameters a=8.5080(4),c=6.4141(2) Å. The X-ray structures of the two structurally related phases Gd₅Si₃B_0.64 and host binary Gd₅Si₃ have been refined from three-dimensional single-crystal intensity data to the final R values of 0.036 (R_w=0.046) and 0.046 (R_w=0.055) for 457 and 401 reflections, respectively with [F>4σ(F)]. Both structures exhibit the Mn₅Si₃-type structure, with in addition for Gd₅Si₃B_0.64 a partial occupancy by boron of the normally vacant interstitial site at the center of the Gd₆ octahedron, which corresponds to the origin of the unit cell. Bonding between the interstitial boron atoms and the gadolinium ones forming the Gd₆B polyhedra is indicated by the decrease in the corresponding Gd-Gd distances and consequently in the unit cell volume. Finally, the Gd-Si-B phase diagram is compared with the previously reported Er-Si-B, at 1070 K.     

EuZn2Si2 and EuZn2Ge2 Grown from Zn or Ga(ln)/Zn Flux

Single crystals of the novel ternary compounds EuZn₂Si₂ and EuZn₂Ge₂ were grown from pure gallium, indium, or zinc metal used as a flux solvent. Crystal properties were characterized using X-ray single-crystal analyses via Gandolfi and Weissenberg film techniques and by four-circle X-ray single-crystal diffractometry. The new compounds crystallize with ternary derivative structures of BaAl₄, i.e., EuZn₂Si₂ with ThCr₂Si₂-type (a=0.42607(2) nm, c=1.03956(5) nm, I4/mmm, R₁=0.038) and EuZn₂Ge₂ with CaBe₂Ge₂-type (a=0.43095(2) nm, c=1.07926(6) nm, P4/nmm, R₁=0.067). XAS and magnetic measurements on EuZn₂Si₂ and EuZn₂Ge₂ revealed in both compounds the presence of Eu²⁺ ions carrying large magnetic moments, which order magnetically at low temperatures. The magnetic phase transition occurs at T_N=16 and 7.5 K for the silicide and the germanide, respectively. In EuZn₂Si₂ there occurs a spin reorientation at 13 K and furthermore some canting of antiferromagnetically ordered moments below about 10 K. In EuZn₂Ge₂ a canted antiferromagnetic structure is formed just at T_N.     

Crystal structure and magnetic properties of the UFe7Al5 uranium-iron aluminide

The ternary compound UFe₇Al₅ was synthesized by arc melting, followed by annealing at 850°C. The crystal structure was determined by single-crystal X-ray diffraction and refined to a residual value of R=0.039 (S=1.030), with lattice parameters a=8.581(2) Å and c=4.946(1) Å. This compound is a new extreme composition in the family of intermetallics with general formula UFe_xAl_12−x crystallizing in the tetragonal ThMn₁₂-type structure, space group I4/mmm. In contrast to UFe_xAl_12−x within the composition range 4?x?6, in UFe₇Al₅ the additional iron atom is found in the 8i equipositions. Magnetization measurements versus temperature show two magnetic transitions at 363 and 275 K, respectively, with a ferromagnetic behavior below the highest temperature transition. ⁵⁷Fe Mössbauer data indicate that the high-temperature transition is related to the ordering of the iron atoms. The dependence of the isomer shifts and magnetic hyperfine fields on the crystallographic site and on the number of the iron nearest neighbors is similar to that observed in the other UFe_xAl_12−x and rare-earth analogues. The magnetic hyperfine field values of iron atoms on 8i sites is larger than in the other sites, in agreement with previous data obtained for other ThMn₁₂-type compounds.     

Phases in the Al–Yb–Zn system between 25 and 50 at% ytterbium

Phases YbZn_1−xAl_x, YbZn_2−xAl_x and YbZn_3−xAl_x were studied by electron microprobe analysis and X-ray single crystal and powder methods. The compound YbZn_0.8Al_0.2 crystallizes with the CsCl-type, a=3.635(2) Å. Four phases were investigated by single crystal X-ray diffraction: YbZn_0.996(6)Al_1.004(6), MgNi₂-type, P6₃/mmc, a=5.573(1), c=18.051(3) Å, Z=8, wR2=0.040 and YbZn_0.88(3)Al_1.12(3), MgCu₂-type, , a=7.860(2) Å, Z=8, wR2=0.060, both showing mixed Zn/Al occupancy; YbZn_2.50(1)Al_0.50(1), CeNi₃-type, P6₃/mmc, a=5.496(1), c=17.336(2) Å, Z=6, wR2=0.036 and YbZn_1.92(2)Al_1.08(2), PuNi₃- or NbBe₃-type, , a=5.499(1), c=26.134(5) Å, Z=9, wR2=0.053, where the zinc atoms are ordered in the CaCu₅ segment, while share the sites with aluminium in the Laves phase segment. In the pseudobinary section YbZn_2−xAl_x four structures occur in sequence with increasing the electron concentration: CeCu₂ or KHg₂ (x=0–0.3), MgZn₂ (x=0.33–0.54), MgNi₂ (x=0.68–1.01) and MgCu₂ (x=1.12–2). This sequence agrees with the results of first-principles calculations, already reported in the literature for other similar series. In the YbZn_3−xAl_x section CeNi₃-type compounds occur with x=0.40–0.88 followed by PuNi₃-type compounds with x=0.92–1.10. The stability ranges of these phases are related to the valence electron concentration.     

Synthesis of New Lithium Ionic Conductor Thio-LISICON—Lithium Silicon Sulfides System

The new lithium ionic conductors, thio-LISICON (LIthium SuperIonic CONductor), were found in the ternary Li₂S-SiS₂-Al₂S₃ and Li₂S-SiS₂-P₂S₅ systems. Their structures of new materials, Li_4+xSi_1−xAl_xS₄ and Li_4−xSi_1−xP_xS₄ were determined by X-ray Rietveld analysis, and the electric and electrochemical properties were studied by electronic conductivity, ac conductivity and cyclic voltammogram measurements. The structure of the host material, Li₄SiS₄ is related to the γ-Li₃PO₄-type structure, and when the Li⁺ interstitials or Li⁺ vacancies were created by the partial substitutions of Al³⁺ or P⁵⁺ for Si⁴⁺, large increases in conductivity occur. The solid solution member x=0.6 in Li_4−xSi_1−xP_xS₄ showed high conductivity of 6.4×10^-4 S cm⁻¹ at 27°C with negligible electronic conductivity. The new solid solution, Li_4−xSi_1−xP_xS₄, also has high electrochemical stability up to ∼5 V vs Li at room temperature. All-solid-state lithium cells were investigated using the Li_3.4Si_0.4P_0.6S₄ electrolyte, LiCoO₂ cathode and In anode.     

Preparation and crystal structure of ternary rare-earth platinum metal aluminides R2T3Al9 (T=Rh, Ir, Pd) with Y2Co3Ga9-type structure and magnetic properties of the iridium compounds

The ternary aluminides R₂Rh₃Al₉ (R=Y, La-Nd, Sm, Gd-Tm, Lu), R₂Ir₃Al₉ (R=Y, La-Nd, Sm, Gd-Lu), and R₂Pd₃Al₉ (R=Y, Gd-Tm) have been prepared by arc melting of the elemental components with an excess of aluminum and dissolving the aluminum-rich matrix in hydrochloric acid. They crystallize with Y₂Co₃Ga₉-type structure: Cmcm, Z=4. The crystal structures of Ho₂Rh₃Al₉ and Er₂Ir₃Al₉ have been refined from single-crystal X-ray data; Ho₂Rh₃Al₉: a=1316.8(3) pm, b=760.2(2) pm, c=933.7(2) pm, R=0.044 for 255 structure factors and 27 variables; Er₂Ir₃Al₉: a=1313.8(2) pm, b=758.5(1) pm, c=933.8(2) pm, R=0.057 (392 F values, 27 variables). The structure may be viewed as consisting of atomic layers of the compositions A=R₂Al₃ and B=T₃Al₆ which alternate in the sequence ABAB along the z direction. Approximately 33% and 27% of the A layers were found to be misplaced in the crystals investigated for Ho₂Rh₃Al₉ and Er₂Ir₃Al₉, respectively. The magnetic properties of most iridium-containing compounds have been determined with a superconducting quantum interference device magnetometer. The yttrium and the lanthanum compounds show Pauli paramagnetism, others reflect the magnetic behavior of the rare-earth components. The magnetic ordering temperatures are all lower than 20 K.     

Mixed-metal flux synthesis of quaternary RMn2TrxZn20−x compounds with Tr=Al, In

Eighteen new intermetallic compounds RMn₂Tr_xZn_20−x (2<x<7; R=rare-earth metal; Tr=Al, In) were synthesized using low-melting mixtures of (Tr/Zn) as a solvent. Structural refinement using single-crystal X-ray diffraction data shows that the compounds are substituted variants of the cubic CeCr₂Al₂₀-type structure (Fd-3m, Z=8; unit cell parameters vary from a=14.1152(3)Å for YbMn₂Al_5.3Zn_14.7 to a=14.8125(4)Å for SmMn₂In_5.9Zn_14.1). The Zn and Tr elements show site preferences in the indium compounds, but not in the aluminum analogs. The substitution of trielide element for zinc modifies the valence electron count of the compounds to allow for the incorporation of Mn into the structure. Magnetic susceptibility data show no evidence of magnetic ordering down to 3 K.     

Crystal structures of RPt3−xSi1−y(R=Y, Tb, Dy, Ho, Er, Tm, Yb) studied by single crystal X-ray diffraction

The crystal structures of ternary compounds RPt_3−xSi_1−y(R=Y, Tb, Dy, Ho, Er, Tm, Yb) have been elucidated from X-ray single crystal CCD data. All compounds are isotypic and crystallize in the tetragonal space group P4/mbm. The general formula RPt_3−xSi_1−y arises from defects: x≈0.20, y≈0.14. The crystal structure of RPt_3−xSi_1−y can be considered as a packing of four types of building blocks which derive from the CePt₃B-type unit cell by various degrees of distortion and Pt, Si-defects.     

X-ray structural study of intermetallic alloys RT2Si and RTSi2 (R=rare earth, T=noble metal)

Two series of intermetallic alloys, RT₂Si and RTSi₂, have been synthesized from stoichiometric compositions. The crystal structures of EuPt_1+xSi_2−x (CeNiSi₂-type), CeIr₂Si (new structure type), YbPd₂Si and YbPt₂Si (both YPd₂Si-type) have been elucidated from X-ray single crystal CCD data, which were confirmed by XPD experiments. The crystal structures of LaRh₂Si and LaIr₂Si (CeIr₂Si-type), {La,Ce,Pr,Nd}AgSi₂ (all TbFeSi₂-type), and EuPt₂Si (inverse CeNiSi₂-type) were characterized by XPD data. RT₂Si/RTSi₂ compounds were neither detected in as-cast alloys Sc₂₅Pt₅₀Si₂₅, Eu₂₅Os₂₅Si₅₀ and Eu₂₅Rh₂₅Si₅₀ nor after annealing at 900 °C. Instead, X-ray single crystal data prompted Eu₂Os₃Si₅ (Sc₂Fe₃Si₅-type) and EuRh_2+xSi_2−x (x=0.04, ThCr₂Si₂-type) as well as a new structure type for Sc₂Pt₃Si₂ (own type).     

Mn5Si3-type host-interstitial boron rare-earth metal silicide compounds RE5Si3: Crystal structures, physical properties and theoretical considerations

A series of binary rare-earth metal silicides RE₅Si₃ and ternary boron-interstitial phases RE₅Si₃B_x (RE=Gd, Dy, Ho, Lu, and Y) adopting the Mn₅Si₃-type structure, have been prepared from the elemental components by arc melting. Boron “stuffed” phases were subsequently heated at 1750 K within a high-frequency furnace. Crystal structures were determined for both binary and ternary series of compounds from single-crystal X-ray data: hexagonal symmetry, space group P6₃/mcm, Z=2. Boron insertion in the host binary silicides results in a very small decrease of the unit cell parameters with respect to those of the binaries. According to X-ray data, partial or nearly full boron occupancy of the interstitial octahedral sites in the range 0.6-1 is found. The magnetic properties of these compounds were characterized by the onset of magnetic ordering below 100 K. Boron insertion induces a modification of the transition temperature and θ_p values in most of the antiferromagnetic binary silicides, with the exception of the ternary phase Er₅Si₃B_x which was found to undergo a ferromagnetic transition at 14 K. The electrical resistivities for all binary silicides and ternary boron-interstitial phases resemble the temperature dependence of metals, with characteristic changes of slope in the resistivity curves due to the reduced electron scattering in the magnetically ordered states. Zintl-Klemm concept would predict a limiting composition RE₅Si₃B_0.6 for a valence compound and should then preclude the stoichiometric formula RE₅Si₃B. Density functional theory calculations carried out on some RE₅Si₃Z_x systems for different interstitial heteroatoms Z and different x contents from 0 to 1 give some support to this statement.