Synthesis, structure, and electronic structure of K2CuSbS3

The new compound K₂CuSbS₃ has been synthesized by the reaction of K₂S, Cu, Sb, and S at 823 K. The compound crystallizes in the Na₂CuSbS₃ structure type with four formula units in space group P2₁/c of the monoclinic system in a cell at 153 K of a=6.2712 (6) Å, b=17.947 (2) Å, c=7.4901 (8) Å, β=120.573 (1)°, and V=725.81 (12) Å³. The structure contains two-dimensional layers separated by K atoms. Each layer is built from CuS₃ and SbS₃ units. Each Cu atom is pyramidally coordinated to three S atoms with the Cu atom about 0.4 Å above the plane of the S atoms. Each Sb atom is similarly coordinated to three S atoms but is about 1.1 Å above its S₃ plane. First-principles calculations indicate an indirect band gap of 1.9 eV. These calculations also indicate that there is a bonding interaction between the Cu and Sb atoms. An optical absorption measurement performed with light perpendicular to the (0 1 0) crystal face of a red block-shaped crystal of K₂CuSbS₃ indicates an experimental indirect band gap of 2.2 eV.     

Synthesis, crystal structure, and electronic structure of RbVSe2

RbVSe₂ has been synthesized at 773 K through the reaction of V and Se with a Rb₂Se₃ reactive flux. The compound crystallizes in the orthorhombic space group D_2h²⁴-Fddd with 16 formula units in a cell of dimensions , , and at . The structure possesses infinite one-dimensional chains of edge-sharing VSe₄ tetrahedra separated from the Rb⁺ ions. These chains distort slightly to chains. The V-V distance within these chains is 2.8362(4) Å. First-principles total energy calculations indicate that a non-magnetic configuration for the V³⁺ cations is the most stable.     

Syntheses and structures of CsHo3Te5 and Cs3Tm11Te18 and the electronic structure of CsHo3Te5

Single crystals of CsHo₃Te₅ and Cs₃Tm₁₁Te₁₈ have been grown as byproducts in the synthesis of CsLnZnTe₃ (Ln=Ho or Tm) through the reaction of Ln, Zn, and Te with a CsCl flux at 850 °C. The crystal structures have been determined from single-crystal X-ray diffraction data. CsHo₃Te₅ crystallizes in space group Pnma of the orthorhombic system whereas Cs₃Tm₁₁Te₁₈ crystallizes in the space group C2/m of the monoclinic system. Each of the compounds adopts a three-dimensional structure; each possesses tunnels built from LnTe₆ octahedra that are filled with Cs atoms. The pseudo-rectangular tunnel in CsHo₃Te₅ is large enough in cross-section to accommodate two symmetrically equivalent Cs atoms. In the Cs₃Tm₁₁Te₁₈ structure there are two different sized tunnels: the smaller one is only large enough to host one Cs atom per unit cell whereas the larger one can accommodate two Cs atoms. The electronic structure of CsHo₃Te₅ was calculated. The band gap is estimated to be about 1.2 eV, consistent with the black color of the crystals.     

Synthesis, crystal structure and properties of K2Ta2S10: A novel ternary tantalum polysulfide with TaS8 polyhedra forming infinite anionic chains

The new ternary alkali tantalum polysulfide K₂Ta₂S₁₀ has been synthesized by reacting TaS₂ with an in situ formed melt of K₂S₃ and S at 773 K. The compound crystallizes with four formula units in the monoclinic space group P2₁/n (No. 14) with lattice parameters of . The structure contains two different zigzag chain anions [TaS₅]⁻, running parallel to the crystallographic b-axis separated by potassium cations. The two crystallographically independent tantalum atoms are in a distorted bi-capped trigonal prismatic environment of eight sulfur atoms which was never observed before. The TaS₈ polyhedra share three S atoms on each side to form the anionic chains. The compound was characterized with FIR and Raman spectroscopy.     

KBiMS4 (M=Si, Ge): Synthesis, structure, and electronic structure

Two new bismuth sulfides KBiSiS₄ and KBiGeS₄ have been synthesized by means of the reactive flux method. They adopt the RbBiSiS₄ structure type and crystallize in space group P2₁/c of the monoclinic system. The structure consists of (M=Si, Ge) layers separated by bicapped trigonal-prismatically coordinated K atoms. The M atom is tetrahedrally coordinated to four S atoms and the Bi atom is coordinated to a distorted monocapped trigonal prism of seven S atoms. The optical band gap of 2.25(2) eV for KBiSiS₄ was deduced from the diffuse reflectance spectrum. From a band structure calculation, the optical absorption for KBiSiS₄ originates from the layer. The Si 3p orbitals, Bi 6p orbitals, and S 3p orbitals are highly hybridized near the Fermi level. The orbitals of K have no contributions on both the upper of valence band and the bottom of conduction band.     

Synthesis, band structure, and optical properties of Ba2ZnV2O8

A novel compound Ba₂ZnV₂O₈ has been synthesized in high temperature solution reaction and its crystal structure has been characterized by means of single crystal X-ray diffraction analysis. It crystallizes in monoclinic system and belongs to space group P2₁/c with a=7.9050(16), b=16.149(3), , β=90.49(3). It builds up from 1-D branchy chains of [ZnV₂O₈⁴⁻]_∞, and the Ba²⁺ cations are located in the space among these chains. The IR spectrum, ultraviolet-visible diffuse reflection integral spectrum and fluorescent spectra of this compound have been investigated. The calculated results of energy band structure by the density functional theory method show that the solid-state compound of Ba₂ZnV₂O₈ is an insulator with direct band gap of 3.48 eV. The calculated total and partial density of states indicate that the top valence bands are contributions from the mixings of O-2p, V-3d, and Zn-3d states and low conduction bands mostly originate from unoccupied antibonding states between the V-3d and O-2p states. The V-O bonds are mostly covalence characters and Zn-O bonds are mostly ionic interactions, and the ionic interaction strength is stronger between the Ba-O than between the Zn-O. The refractive index of n_x, n_y, and n_z is estimated to be 1.7453, 1.7469, and 1.7126, respectively, at wavelength of 1060 nm for Ba₂ZnV₂O₈ crystal.     

Synthesis, crystal structure and optical properties of an indium phosphate K3In3P4O16

An alkali-metal indium phosphate crystal, K₃In₃P₄O₁₆, has been synthesized by a high-temperature solution reaction and exhibits a new structure in the family of the alkali-metal indium phosphates system. Single-crystal X-ray diffraction analysis shows the structure to be monoclinic with space group P2₁/n, and the following cell parameters: a=9.7003(18), b=9.8065(18), c=15.855(3) Å, β=90.346(3)°, V=1508.2(5) Å³, Z=4, R=0.0254. It possesses three-dimensional anionic frameworks with tunnels occupied by K⁺ cations running along the a-axis. The emission and absorption spectra of the compound have been investigated. Additionally, the calculations of energy band structure, density of states, dielectric constants and refractive indexes have been performed with the density functional theory method. Also, the two-photon absorption spectrum is simulated by two-band model. The obtained results tend to support the experimental data.     

Full potential study of the elastic, electronic, and optical properties of spinels MgIn2S4 and CdIn2S4 under pressure effect

The structural, elastic, electronic, and optical properties of cubic spinel MgIn₂S₄ and CdIn₂S₄ compounds have been calculated using a full relativistic version of the full-potential linearized-augmented plane wave with the mixed basis FP/APW+lo method. The exchange and correlation potential is treated by the generalized-gradient approximation (GGA). Moreover, the Engel-Vosko GGA formalism is also applied to optimize the corresponding potential for band structure calculations. The ground state properties, including the lattice constants, the internal parameter, the bulk modulus, and the pressure derivative of the bulk modulus are in reasonable agreement with the available data. Using the total energy-strain technique, we have determined the full set of first-order elastic constants C_ij and their pressure dependence, which have not been calculated or measured yet. The shear modulus, Young’s modulus, and Poisson’s ratio are calculated for polycrystalline XIn₂S₄ aggregates. The Debye temperature is estimated from the average sound velocity. Electronic band structures show a direct band gap (Г-Г) for MgIn₂S₄ and an indirect band gap (K-Г) for CdIn₂S₄. The calculated band gaps with EVGGA show a significant improvement over the GGA. The optical constants, including the dielectric function ε(ω), the refractive index n(ω), the reflectivity R(ω), and the energy loss function L(ω) were calculated for radiation up to 30 eV.     

Synthesis, crystal and electronic structure, and physical properties of the new lanthanum copper telluride La3Cu5Te7

The new lanthanum copper telluride La₃Cu_5−xTe₇ has been obtained by annealing the elements at 1073 K. Single-crystal X-ray diffraction studies revealed that the title compound crystallizes in a new structure type, space group Pnma (no. 62) with lattice dimensions of a=8.2326(3) Å, b=25.9466(9) Å, c=7.3402(3) Å, V=1567.9(1) Å³, Z=4 for La₃Cu_4.86(4)Te₇. The structure of La₃Cu_5−xTe₇ is remarkably complex. The Cu and Te atoms build up a three-dimensional covalent network. The coordination polyhedra include trigonal LaTe₆ prisms, capped trigonal LaTe₇ prisms, CuTe₄ tetrahedra, and CuTe₃ pyramids. All Cu sites exhibit deficiencies of various extents. Electrical property measurements on a sintered pellet of La₃Cu_4.86Te₇ indicate that it is a p-type semiconductor in accordance with the electronic structure calculations.     

Crystal and electronic structure of the red semiconductor Ba4LaSbGe3Se13 comprising the complex anion [Ge2Se7-Sb2Se4-Ge2Se7]

Ba₄LaGe₃SbSe₁₃ was prepared by reacting the elements under exclusion of air at 700°C, followed by slow cooling to room temperature. It crystallizes in a new type of the monoclinic space group P2₁/c, with lattice dimensions of a=1633.30(9) pm, b=1251.15(7) pm, c=1303.21(7) pm, β=103.457(2)°, V=2590.0(2) 10⁶ pm³ (Z=4). The structure contains isolated GeSe₄ as well as Ge₂Se₇ digermanate units. Two of the latter are interconnected via an Sb₂Se₄ bridge yielding an almost linear complex anion [Ge₂Se₇-Sb₂Se₄-Ge₂Se₇]¹⁴⁻. The oxidation states are assigned to be Ba^II, La^III, Ge^IV, Sb^III, and Se^−II, in accord with an electronically saturated nonmetal. The lone pair of Sb^III reflects itself in highly irregular Se coordination. The red color of the material is indicative of semiconducting behavior with an activation energy of 2.0 eV. Electronic structure calculations based on the LMTO approximation point to a smaller gap, typical for this calculation method. We utilized the COHP tool to explore the bonding character of the different Sb-Se interactions.     

Bi3In4S10 and Bi14.7In11.3S38: Two new bismuth sulfides with interesting Bi-Bi bonding

Two new ternary bismuth chalcogenides, Bi₃In₄S₁₀ and Bi_14.7In_11.3S₃₈, were synthesized from the reactions of binary sulfides via a two-step flux technique. Single-crystal X-ray diffraction analyses indicate that Bi₃In₄S₁₀ crystallizes in the non-centrosymmetric space group Pm and Bi_14.7In_11.3S₃₈ crystallizes in the centrosymmetric space group P2₁/m. Both compounds adopt three-dimensional frameworks. A distinct structural feature in the two structures is the presence of chains of Bi atoms with alternating short Bi-Bi bonds of around 3.1 Å and longer distances of around 4.6 Å. The optical band gaps of 1.42(2) eV for Bi₃In₄S₁₀ and 1.45(2) eV for Bi_14.7In_11.3S₃₈ were deduced from the diffuse reflectance spectra.     

Synthesis and characterization of La4MnCu6S10

The new quaternary sulfide La₄MnCu₆S₁₀ has been synthesized by the reaction of La₂S₃, MnS, and CuS₂ at 1223 K. This compound crystallizes in a new structure type in space group of the triclinic system with one formula unit in a cell of dimensions at 153 K of a=6.6076(3) Å, b=7.3247(3) Å, c=8.7844(4) Å, α=83.457(1)°, β=74.398(1)°, γ=89.996(1)°, and V=406.61(3) Å³. The structure of La₄MnCu₆S₁₀ consists of a three-dimensional framework of interconnected LaS₇ monocapped trigonal prisms, MnS₆ octahedra, and CuS₄ tetrahedra. Band gaps of 2.49 eV in the [100] direction and 2.53 eV in the [001] direction have been derived from optical absorption measurements on a La₄MnCu₆S₁₀ single crystal.     

Structure, energy band, and optical properties of NaLa(PO3)4 crystal

An alkali metal-rare earth phosphate crystal of NaLa(PO₃)₄ has been synthesized by high temperature solid-state reactions and structurally characterized by single crystal X-ray diffraction analysis, for the first time. It crystallizes in the monoclinic P2₁/n space group with lattice parameters: a=7.2655(3), b=13.1952(5), , β=90.382°(1), , Z=4. It is composed of LaO₈ polyhedra and [(PO₃)₄]⁴⁻ chains sharing oxygen atoms to form a three-dimensional framework, delimiting intersecting tunnels in which the sodium ions are located. The IR spectrum, absorption spectrum, and emission spectrum of the compound have been investigated. The absorption edge is located at 340 nm (3.60 eV). The calculated total and partial densities of states indicate that the top of valence bands is mainly built upon O-2p states which interact with P-3p states via σ (P-O) interactions, and the low conduction bands mostly originates from unoccupied La-5d states. The P-O bond is mostly covalent in character, and the ionic character of the Na-O bond is larger than that in the La-O bond.     

Synthesis, structure, optical properties, and electronic structure of NaLiCdS2

The new compound NaLiCdS₂ has been synthesized by the reaction of Cd and a Li₂S/S/Na₂S flux at 773 K. This compound, which has the Ce₂O₂S structure type, crystallizes with one formula unit in space group P3¯m1 of the trigonal system in a cell at T=153 K with a=4.1320(3) Å and c=6.8666(11) Å. The structure consists of two-dimensional layers stacked perpendicular to the [001] direction. The two-dimensional layers are formed by corner-sharing LiS₄ or CdS₄ tetrahedra. The Na atoms are between these layers. Li incorporation in the compound is confirmed by an SIMS chemical composition map and by ICP measurements. The Li and Cd atoms are disordered in the crystal structure. First-principles calculations show that the optical excitations arise primarily from S→Cd charge-transfer transitions at 1.0 eV (very weak) and 2.4 eV (strong). Calculations also indicate that Na contributions around the Fermi level are significant. Polarized single-crystal optical measurements indicate an indirect optical band gap of 2.37 eV for light perpendicular to the (001) crystal face, in good agreement with theory. The compound NaLiZnS₂ has also been synthesized and is found to be isostructural with NaLiCdS₂.     

Single-crystal growth, crystal and electronic structure of NaCoO2

Single crystals of NaCoO₂ have been successfully synthesized for the first time by a flux method at 1323 K. A single-crystal X-ray diffraction study confirmed the trigonal space group and the lattice parameters , . The crystal structure has been refined to the conventional values R=1.9% and wR=2.1% for 309 independent observed reflections. The electron density distribution of NaCoO₂ has been studied by the maximum entropy method (MEM) using single-crystal X-ray diffraction data obtained at 298 K. From the results of the MEM analysis, the strong covalent bonding was clearly observed between Co and O atoms, while no bonding was observed around Na atoms. We also calculated the electron density of NaCoO₂ by first principles calculations. The electron density obtained experimentally is in good agreement with the theoretical one.     

Synthesis, crystal structure, and properties of the rhombohedral modification of the thiospinel CuZr1.86(1)S4

The rhombohedral modification of the thiospinel, CuZr_1.86(1)S₄, has been synthesized by the reaction of the constituent elements in an alkali metal halide flux and structurally characterized by single crystal X-ray diffraction techniques. The title compound crystallizes in the rhombohedral space group (#166, a=7.3552(2) Å, c=35.832(2) Å, V=1678.76(13) Å³, Z=12, and R/wR=0.0239/0.0624). The structure is composed of close packed S layers, with a stacking order of ?ABCBCABABCACAB?·along the c axis. The Zr and Cu atoms occupy the octahedral and tetrahedral holes between S layers, respectively. Three different kinds of S-M-S layers exist in the structure: layer I has fully occupied Zr and Cu sites, layer II has fully occupied Zr sites but no Cu, and layer III has partially occupied Zr and fully occupied Cu sites. Transport and optical properties indicate that the title compound is a small band gap (1.26 eV) n-type semiconductor.     

Synthesis, structure, and ionic conductivity of Na5Li3Ti2S8

The compound Na₅Li₃Ti₂S₈ has been synthesized by the reaction of Ti with a Na/Li/S flux at 723 K. Na₅Li₃Ti₂S₈ crystallizes in a new structure type with four formula units in space group C2/c of the monoclinic system. The structure contains three crystallographically independent Na⁺ cations and two crystallographically independent Li⁺ cations. Na₅Li₃Ti₂S₈ possesses a channel structure that features two-dimensional layers built from Li(1)S₄ and TiS₄ tetrahedra. The layers, which are stacked along c, comprise eight-membered rings and sixteen-membered rings. Na(3)⁺ cations are located between the eight-membered rings and Na(1)⁺, Na(2)⁺, and Li(2)⁺ cations are located between the sixteen-membered rings. These cations are each octahedrally coordinated by six S²⁻ anions. The ionic conductivity σ_T of Na₅Li₃Ti₂S₈ ranges from 8.8×10⁻⁶ S/cm at 303 K to 3.8×10⁻⁴ S/cm at 483 K. The activation energy E_a is 0.40 eV.     

Magnetic properties of barium uranate Ba2U2O7

Unique magnetic properties of a ternary uranate Ba₂U₂O₇ are reported. Magnetic susceptibility measurements reveal that this compound undergoes a magnetic transition at 19 K. Below this temperature, magnetic hysteresis was observed. The results of the low-temperature specific heat measurements below 30 K support the existence of the second-order magnetic transition at 19 K. Ba₂U₂O₇ undergoes a canted antiferromagnetic ordering at this temperature. The magnetic anomaly which sets in at 58 K may be due to the onset of one-dimensional magnetic correlations associated with the linear chains formed by U ions. The analysis of the experimental magnetic susceptibility data in the paramagnetic temperature region gives the effective magnetic moment μ_eff=0.73 μ_B, the Weiss constant θ=−10 K, and the temperature-independent paramagnetic susceptibility χ_TIP=0.14×10⁻³ emu/mole.The magnetic susceptibility results and the optical absorption spectrum were analyzed on the basis of an octahedral crystal field model. The energy levels of Ba₂U₂O₇ and the crystal field parameters were determined.     

Synthesis, crystal and band structures, and optical properties of a new supramolecular complex: [Hg6Sb4](InBr6)Br

A new supramolecular complex [Hg₆Sb₄](InBr₆)Br (1) has been prepared by the solid-state reaction of HgBr₂ with elemental In and Sb at 450 °C. The crystal structure of 1 features a three-dimensional [Hg₆Sb₄]⁴⁺ framework with cavities of two different sizes occupied by different kinds of guest anions. The bigger cavities are filled with the octahedral InBr₆³⁻ ions, while the smaller cavities trap Br⁻ ions. The optical properties were investigated in terms of the diffuse reflectance and infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is semiconductor, and the optical absorption is mainly originated from the charge transitions from Sb-5p and Br-4p to In-5s and Hg-6s states.     

Crystal structure, electronic structure and physical properties of the new low-valent thallium silicon telluride Tl6Si2Te6 in comparison to Tl6Ge2Te6

The title compounds were prepared from the elements in the stoichiometric ratio at 800 °C under exclusion of air. Tl₆Si₂Te₆ crystallizes in the space group P1¯, isostructural with Tl₆Ge₂Te₆, with , , , α=89.158(2)°, β=96.544(2)°, γ=100.685(2)°, (Z=2). Its structure is composed of dimeric [Si₂Te₆]⁶⁻ units with a Si-Si single bond, while the Tl atoms are irregularly coordinated by five to six Te atoms. Numerous weakly bonding Tl-Tl contacts exist. Both title compounds are black semiconductors with small band gaps, calculated to be 0.9 eV for Tl₆Si₂Te₆ and 0.5 eV for Tl₆Ge₂Te₆. The Seebeck coefficients are +65 μV K⁻¹ in case of Tl₆Si₂Te₆ and +150 μV K⁻¹ in case of Tl₆Ge₂Te₆ at 300 K, and the electrical conductivities are 5.5 and 3 Ω⁻¹ cm⁻¹, respectively.