Synthesis, structure, optical properties, and electronic structure of NaLiCdS2

The new compound NaLiCdS₂ has been synthesized by the reaction of Cd and a Li₂S/S/Na₂S flux at 773 K. This compound, which has the Ce₂O₂S structure type, crystallizes with one formula unit in space group P3¯m1 of the trigonal system in a cell at T=153 K with a=4.1320(3) Å and c=6.8666(11) Å. The structure consists of two-dimensional layers stacked perpendicular to the [001] direction. The two-dimensional layers are formed by corner-sharing LiS₄ or CdS₄ tetrahedra. The Na atoms are between these layers. Li incorporation in the compound is confirmed by an SIMS chemical composition map and by ICP measurements. The Li and Cd atoms are disordered in the crystal structure. First-principles calculations show that the optical excitations arise primarily from S→Cd charge-transfer transitions at 1.0 eV (very weak) and 2.4 eV (strong). Calculations also indicate that Na contributions around the Fermi level are significant. Polarized single-crystal optical measurements indicate an indirect optical band gap of 2.37 eV for light perpendicular to the (001) crystal face, in good agreement with theory. The compound NaLiZnS₂ has also been synthesized and is found to be isostructural with NaLiCdS₂.     

Electronic band structure and chemical bonding in the new antiperovskites AsNMg3 and SbNMg3

The electronic properties of the new Mg-based antiperovskites AsNMg₃ and SbNMg₃ are investigated within the ab initio local-density full-potential LMTO-GGA method. Both compounds are ionic wide-gap semiconductors with a direct energy gap at Γ of 1.332 eV for AsNMg₃ and an indirect energy gap (Γ→M transitions) of 0.623 eV for SbNMg₃. The valence bands are composed mainly of N 2p and (As,Sb) np states. There is some covalent mixing between Mg-N and Mg-(As,Sb) valence states. The equilibrium values of lattice constants and the bulk modulus were also obtained.     

Semiconducting thin films of zinc selenide quantum dots

A novel chemical route for deposition of zinc selenide quantum dots in thin film form is developed. The deposited films are characterized with very high purity in crystallographic sense, and behave as typical intrinsic semiconductors. Evolution of the average crystal size, lattice constant, lattice strain and the optical properties of the films upon thermal treatment is followed and discussed. The band gap energy of as-deposited ZnSe films is blue-shifted by ≈0.50 eV with respect to the bulk value, while upon annealing treatment it converges to 2.58 eV. Two discrete electronic states which originate from the bulk valence band are observed in the UV-VIS spectra of ZnSe 3D quantum dots deposited in thin film form via allowed electronic transitions to the 1S electronic state arising from the bulk conduction band—appearing at 3.10 and 3.50 eV. The splitting between these two states is approximately equal to the spin-orbit splitting in the case of bulk ZnSe. The electronic transitions in the case of non-quantized annealed films are discussed in terms of the direct allowed band-to-band transitions with the spin-orbit splitting of the valence band of 0.40 eV. The effective mass approximation model (i.e., the Brus model) with the static relative dielectric constant of bulk ZnSe fails to predict correctly the size dependence of the band gap energy, while only a slight improvement is obtained when the hyperbolic band model is applied. However, when substantially smaller value for ε_r (2.0 instead of 8.1) is used in the Brus model, an excellent agreement with the experimental data is obtained, which supports some earlier indications that the quantum dots ε_r value could be significantly smaller than the bulk material value. The ionization energy of a deep donor impurity level calculated on the basis of the temperature dependence of the film resistivity is 0.82 eV at 0 K.     

Designing and tuning properties of a three-dimensional porous quaternary chalcogenide built on a bimetallic tetrahedral cluster [M4Sn3S13] (M=Zn/Sn)

A multifunctional three-dimensional quaternary chalcogenide [Na₅Zn_3.5Sn_3.5S₁₃]·6H₂O has been synthesized by solvothermal reactions. [Na₅Zn_3.5Sn_3.5S₁₃]·6H₂O represents an interesting example of metal chalcogenides that combines semiconductivity, porosity, and light emission in a single structure. It crystallizes in the cubic space group Fm-3c, a=17.8630(3) Å, V=5699.85(17) Å³, Z=8. The compound decomposes at ∼450 °C. A band gap of 2.9 eV is estimated from the optical diffuse reflectance data. A strong photoluminescence peak is observed at 2.43 eV in Mn doped samples. The electronic and optical properties of this compound can be systematically tuned by substitution of metal and chalcogen elements.     

Synthesis, crystal structure, and optical properties of CeMn0.5OSe

The new quaternary selenide CeMn_0.5OSe has been synthesized by the reaction of Ce, Mn, Se, and SeO₂ at 1223 K. This compound crystallizes in space group P4/nmm of the tetragonal system with two formula units in a cell of dimensions at 153 K of a=4.0260(7) Å, c=9.107(2) Å. CeMn_0.5OSe has the LaAgOS structure type. It is built from [CeO] fluorite-like layers where Ce₄O tetrahedra share Ce-Ce edges that alternate with [MnSe] anti-fluorite like layers along [001]. An optical band gap of 2.01 eV has been derived from absorption measurements on the (100) crystal face of a CeMn_0.5OSe single crystal.     

First-principle studies of Ca-X (X=Si,Ge,Sn,Pb) intermetallic compounds

The structural properties, elastic properties, heats of formation, electronic structures, and densities of states of 20 intermetallic compounds in the Ca-X (X=Si, Ge, Sn, Pb) systems have been systematically investigated by using first-principle calculations. Our computational results indicated that with increasing atomic weight of X, the bulk modulus of Ca-X intermetallic compounds decreases gradually. It was also found that Ca₃₆Sn₂₃ and CaPb are mechanically unstable phases. Results on the electronic energy band and densities of states also indicated that Ca₃Si₄ is an indirect band gap semiconductor with a band gap of 0.598 eV, and Ca₂Si, Ca₂Ge, Ca₂Sn, and Ca₂Pb are direct band gap semiconductors with band gaps of 0.324, 0.265, 0.06, and 0.07 eV, respectively. In addition, it is found that the absolute values of heats of formation for all Ca-X intermetallics are larger than 30 kJ/mol atom.     

Synthesis, structure, and electronic structure of K2CuSbS3

The new compound K₂CuSbS₃ has been synthesized by the reaction of K₂S, Cu, Sb, and S at 823 K. The compound crystallizes in the Na₂CuSbS₃ structure type with four formula units in space group P2₁/c of the monoclinic system in a cell at 153 K of a=6.2712 (6) Å, b=17.947 (2) Å, c=7.4901 (8) Å, β=120.573 (1)°, and V=725.81 (12) Å³. The structure contains two-dimensional layers separated by K atoms. Each layer is built from CuS₃ and SbS₃ units. Each Cu atom is pyramidally coordinated to three S atoms with the Cu atom about 0.4 Å above the plane of the S atoms. Each Sb atom is similarly coordinated to three S atoms but is about 1.1 Å above its S₃ plane. First-principles calculations indicate an indirect band gap of 1.9 eV. These calculations also indicate that there is a bonding interaction between the Cu and Sb atoms. An optical absorption measurement performed with light perpendicular to the (0 1 0) crystal face of a red block-shaped crystal of K₂CuSbS₃ indicates an experimental indirect band gap of 2.2 eV.     

Ab-initio study of the structural, linear and nonlinear optical properties of CdAl2Se4 defect-chalcopyrite

The complex density functional theory (DFT) calculations of structural, electronic, linear and nonlinear optical properties for the defect chalcopyrite CdAl₂Se₄ compound have been reported using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in the WIEN2k code. We employed the Wu and Cohen generalized gradient approximation (GGA-WC), which is based on exchange-correlation energy optimization to calculate the total energy. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure, density of states and the spectral features of the linear and nonlinear optical properties. This compound has a wide direct energy band gap of about 2.927 eV with both the valence band maximum and conduction band minimum located at the center of the Brillouin zone. The ground state quantities such as lattice parameters (a, c, x, y and z), bulk modulus B and its pressure derivative B′ are evaluated. We have calculated the frequency-dependent complex ε(ω), its zero-frequency limit ε₁(0), refractive index n(ω), birefringence Δn(ω), the reflectivity R(ω) and electron energy loss function L(ω). Calculations are reported for the frequency-dependent complex second-order nonlinear optical susceptibilities. We find opposite signs of the contributions of the 2ω and 1ω inter/intra-band to the imaginary part for the dominant component through the wide optical frequency range.     

Why pressure induces an abrupt structural rearrangement in PdTe2 but not in PtTe2

High-pressure X-ray diffraction measurements were carried out for polymeric CdI₂-type compounds MTe₂ (M=Pt, Pd) to investigate if they undergo a structural phase transition under pressure as does IrTe₂. Up to 27 GPa at room temperature PtTe₂ does not undergo any structural phase transition. In contrast, however, an abrupt change in the inter-atomic distances occurs in PdTe₂ above 15.7 GPa at room temperature, and above 5 GPa at 300 °C, but the volume vs. pressure curve exhibits no discontinuity. To account for the differences between the isostructural compounds PtTe₂, PdTe₂ and IrTe₂, their electronic structures and bonding were analyzed on the basis of first principles electronic band structure calculations.     

Synthesis, stoichiometry and thermal stability of Zn3N2 powders prepared by ammonolysis reactions

Zn₃N₂ powders were prepared by ammonolysis reactions at 600 °C and examined by thermogravimetric analysis, powder X-ray and neutron diffraction. The powders obtained in this way are unstable in an oxygen atmosphere above 450 °C. In an argon atmosphere, the powders are stable up to their decomposition point at around 700 °C. Structural models obtained from Rietveld refinements against the powder neutron diffraction data indicate that the Zn₃N₂ powders so-prepared have the anti-bixbyite structure and are almost certainly stoichiometric with no compelling evidence of nitrogen vacancies. Further, no evidence was found for aliovalent oxygen substitution at the nitrogen sites. The calculated bond valence sums imply that Zn₃N₂ cannot be described as a 100% ionic compound. The structural findings are supported by photoluminescence measurements that reveal a band gap of approximately 0.9 eV.     

Structural control of dithiazolyl radicals: Case studies on 3′- and 4′-cyano-benzo-1,3,2-dithiazolyl, NCC6H3S2N

Dithiazolyl radicals with π-stacking motifs have attracted particular interest because of their ability to exhibit spin-switching between diamagnetic distorted π-stacks and paramagnetic regular π-stacked structures through a solid state phase transition. Previous studies indicate that inclusion of electronegative heteroatoms into the backbone favours lamellar structures. This methodology has been extended to the synthesis and characterisation of the title compound, 4′-cyanobenzo-1,3,2-dithiazolyl (4-NCBDTA). Its electronic structure is probed through DFT calculations, cyclic voltammetry and EPR spectroscopy and its crystal structure determined by X-ray powder diffraction at room temperature. Variable temperature SQUID magnetometry reveals that 4-NCBDTA undergoes two phase transitions, each exhibiting bistability; a high temperature phase transition occurs at room temperature (T_C↓ = 291 K, T_C↑ = 304 K, ΔT = 13 K); whilst the low temperature phase transition occurs below liquid nitrogen temperatures (T_C↓ = 37 K, T_C↑ = 28 K;ΔT = 9 K).     

Research on optical band gap of the novel GeSe2–In2Se3–KI chalcohalide glasses

The glass-forming region of the GeSe₂–In₂Se₃–KI system was reported firstly. The dependence of physical, thermal and optical properties on compositions as formula of (1 ? x)(0.8GeSe₂–0.2In₂Se₃)–xKI (x = 0, 0.1, 0.2, 0.3) chalcohalide glasses was investigated. The allowed direct transition and indirect transition, and Urbach energy of samples were calculated according to the classical Tauc equation. The results show that the glass system has good thermal stability and that there is an obvious blue-shift at the visible absorbing cutting-off edge. When the dissolved amount of KI increased from 0 to 30 mol%, the direct optical band gap and the indirect optical band gap were in the range from 1.617 to 1.893 eV and 1.573 to 1.857 eV. With the decrease of the molar refraction the refractive index decreases, optical band gap and metallization criterion increase. The relationship between energy band gap and metallization criterion was analyzed and the optical properties of chalcohalide glasses were summarized.     

Photoluminescence properties of BaMoO4 amorphous thin films

BaMoO₄ amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO₄ was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance. The bond Mo-O present in BaMoO₄ was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 °C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 °C. The reflectivity spectra showed two bands, positioned at 3.38 and 4.37 eV that were attributed to the excitonic state of Ba²⁺ and electronic transitions within MoO²⁻₄, respectively. The optical band gaps of BaMoO₄ were 3.38 and 2.19 eV, for crystalline (600 °C/2 h) and amorphous (200 °C/8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission band in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO₄ amorphous thin films suggested that this material is a highly promising candidate for photoluminescent applications.     

Chemical deposition of semiconducting cadmium selenide quantum dots in thin film form and investigation of their optical and electrical properties

Cadmium selenide quantum dots with cubic crystal structure are chemically deposited in thin film form using selenosulfate as a precursor for selenide ions and ammonia buffer with double role: as a ligand and as a pH value controller. The optical band gap energies of as-deposited and thermally treated cadmium selenide thin films, calculated within the framework of parabolic approximation for the dispersion relation, on the basis of equations which arise from the Fermi's golden rule for electronic transitions from valence to conduction band, are 2.08 and 1.77 eV, correspondingly. The blue shift of band gap energy of 0.34 eV for as-deposited thin films with respect to the bulk value is due to the quantum size effects (i.e., nanocrystals behave as quantum dots) and this finding is in agreement with the theoretical predictions. During the thermal treatment the nanocrystals are sintered, the increase of crystal size being in correlation with the decrease of band gap energy. The annealed thin films are practically non-quantized. From the resistance-temperature measurements, on the basis of the dependence of ln(R/Ω) vs 1/T in the region of intrinsic conduction, the thermal band gap energy (at 0 K) of 1.85 eV was calculated.     

Synthesis, structure and physicochemical characterization of a noncentrosymmetric, quaternary thiostannate: EuCu2SnS4

EuCu₂SnS₄ was prepared by a stoichiometric combination of the elements heated to 700 °C for 125 h. The structure was determined by single crystal X-ray diffraction methods. The compound crystallizes in the noncentrosymmetric, orthorhombic space group Ama2 with a=10.4793(1) Å, b=10.3610(2) Å, c=6.4015(1) Å, Z=4, R1=0.99% and wR2=2.37%. The structure type is that of SrCu₂GeSe₄. The structure can be described as a three-dimensional network built from near perfect SnS₄ and distorted CuS₄ tetrahedra together with EuS₈ square antiprisms. The dark red compound is a semiconductor with an optical bandgap of 1.85 eV.     

Synthesis, crystal and band structures, and properties of a new supramolecular complex (Hg2As)2(CdI4)

A new quaternary supramolecular complex (Hg₂As)₂ (CdI₄) (1) has been prepared by the solid-state reaction and structurally characterized by single crystal X-ray diffraction analysis. Compound 1 crystallizes in the space group P2₁ of the monoclinic system with two formula units in a cell: a=7.945(4), b=12.934(6), c=8.094(4) Å, β=116.898°(1), V=741.7(6) Å³. The structure of 1 is characterized by a tridymite-like three-dimensional cationic framework, which is composed of mercury and arsenic atoms, with the channels being occupied by discrete CdI₄²⁻ tetrahedral guest-anions. The optical properties were investigated in terms of the diffuse reflectance and Fourier transform infrared spectra. The electronic band structure along with density of states (DOS) calculated by DFT method indicates that the present compound is a semiconductor with a direct band gap, and that the optical absorption is mainly originated from the charge transitions from I-5p and As-4p to Cd-5s and Hg-6s states.     

Structural, optoelectronic, infrared and Raman spectra of orthorhombic SrSnO3 from DFT calculations

Orthorhombic SrSnO₃ was investigated using density functional theory (DFT) considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The electronic band structure, density of states, complex dielectric function, optical absorption, and the infrared and Raman spectra were computed. Calculated lattice parameters are close to the experimental measurements, and an indirect band gap (2.27 eV) was obtained within the GGA (LDA) level of calculation. Effective masses for holes and electrons were estimated, being very anisotropic in comparison with similar results for orthorhombic CaSnO₃. The complex dielectric function and the optical absorption of SrSnO₃ were shown to be sensitive to the plane of polarization of the incident light. The infrared spectrum between 100 and 600 cm⁻¹ was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum of orthorhombic SrSnO₃ was achieved.