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1.
利用金辅助金属有机化学气相沉淀法(MOCVD)在GaAs(111)B衬底上分别制备了InAs/GaAs和InAs/In x Ga1-xAs/GaAs(0≤x≤1)纳米线异质结构.实验结果显示,直接生长在GaAs纳米线上的InAs纳米线生长方向杂乱或者沿着GaAs纳米线侧壁向衬底方向生长,生长的含有In x Ga1-xAs组分渐变缓冲段的InAs/In x Ga1-x关键词:
纳米线异质结构
xGa1-xAs')" href="#">InxGa1-xAs
组分渐变缓冲层
金属有机化学气相沉淀法 相似文献
2.
应用特征矩阵法研究了非均匀渐变界面Al0.9Ga0.1As/AlyGa1-yAs/GaAs/AlxGa1-xAs DBR的光学特性.建立了非均匀渐变界面AlyGa1-yAs的折射率模型,并得到了渐变界面特征矩阵的解析解,通过特征矩阵法分别计算了突变GaAs/Al0.9Ga0.1As DBR和渐变DBR的反射谱和反射相移,分析了非均匀渐变层对DBR光学特性的影响,对渐变DBR,需要在DBR前面再增加一定厚度的非均匀渐变相位匹配层才能使整个DBR满足中心波长相位匹配条件,并通过光学厚度近似方法求出相位匹配层厚度.
关键词:
DBR
反射谱
反射相移
特征矩阵法 相似文献
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量子阱中极化子的声子平均数 总被引:8,自引:2,他引:6
采用有效质量近似下的变分法,考虑到电子同时与表面光学声子和体纵光学声子相互作用,研究了无限深量子阱中极化子的表面光学声子平均数,体纵光学声子平均数和光学声子平均数。讨论了电子与体纵光学声子耦合强度α,阱宽L和势垒材料AlxGa1-xAs中Al的含量x对上述光学声子平均数的影响。以GaAs/AlxGa1-xAs量子阱为例进行了数值计算。结果表明:量子阱中表面光学声子平均数随耦合强度α,阱宽L和Al含量x增大而增大。量子阱中体纵光学声子平均数随耦合强度α,阱宽L的增大而增大。光学声子平均数随耦合强度α,阱宽L和Al含量x的增大而增大。 相似文献
5.
采用分子束外延技术对δ掺杂GaAs/AlxGa1-xAs二维电子气(2DEG)样品进行了生长. 在样品生长过程中, 分别改变掺杂浓度(Nd)、空间隔离层厚度(Wd) 和AlxGa1-xAs中Al组分(xAl)的大小, 并在双温(300 K, 78 K)条件下对生长的样品进行了霍尔测量; 结合测试结果, 分别对Nd, Wd及xAl与GaAs/AlxGa1-xAs 2DEG的载流子浓度和迁移率之间的关系规律进行了细致的分析讨论. 生长了包含有低密度InAs量子点层的δ掺杂GaAs/AlxGa1-xAs 2DEG 样品, 采用梯度生长法得到了不同密度的InAs量子点. 霍尔测量结果表明, 随着InAs量子点密度的增加, GaAs/AlxGa1-xAs 2DEG的迁移率大幅度减小, 实验中获得了密度最低为16×108/cm2的InAs量子点样品. 实验结果为内嵌InAs量子点的δ掺杂GaAs/AlxGa1-xAs 2DEG的研究和应用提供了依据和参考.
关键词:
二维电子气
InAs量子点
载流子浓度
迁移率 相似文献
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通过在AlxGa1-xAs/GaAs异质结表面制作一对分裂门,获得了用于实现声表面波单电子输运的准一维量子线.实验研究了0.3K时电子沿该量子线的输运性质.通过自洽求解二维薛定谔方程和泊松方程,分析了该量子线的导带能量和电子浓度的分布,并讨论了量子线宽度对分裂门方向形成限制势的影响.特别是对其线性电子浓度随温度及分裂门电压的变化关系进行了数值模拟,所得到的钳断电压与实验测量值符合较好.
关键词:
量子线
分裂门
线性电子浓度
钳断电压 相似文献
8.
纤锌矿GaN/AlxGa1-xN量子阱中极化子能量 总被引:1,自引:1,他引:0
采用LLP变分方法研究了纤锌矿GaN/AlxGa1-xN量子阱材料中极化子的能级,给出极化子基态能量、第一激发态能量和第一激发态到基态的跃迁能量与量子阱宽度和量子阱深度变化的函数关系。研究结果表明,极化子基态能量、第一激发态能量和跃迁能量随着阱宽L的增大而开始急剧减小,然后缓慢下降,最后接近于体材料GaN中的相应值。基态能量和第一激发态到基态的跃迁能量随着量子阱深度的增加而逐渐增加,窄阱时这一趋势更明显。纤锌矿氮化物量子阱中电子-声子相互作用对能量的贡献比较大,这一值(约40meV)远远大于闪锌矿(GaAs/AlxGa1-xAs)量子阱中相应的值(约3meV)。因此讨论GaN/AlxGa1-xN量子阱中电子态问题时应考虑电子-声子相互作用。 相似文献
9.
通过光学在线监测技术对多层AlxGa1-xAs样品生长过程中的生长速率与表面结构进行了分析。描述了选取合适探测光子能量的方法并在线监测了样品生长过程中表面归一化反射率(Normalized Reflectance, NR)和各向异性反射率(Reflectance Anisotropy,RA)随生长时间的变化,得到了样品的时间分辨NR及RA曲线,利用光学干涉原理解释了NR曲线的振荡衰减特性。不同AlxGa1-xAs层NR曲线收敛值随Al组分的单调变化被认为是材料的折射率变化引起的,而RA值随Al组分的增加而增加说明Al原子的并入对表面光学各向异性有影响。通过拟合每一层材料的归一化反射谱振荡曲线得到了各层生长速率,与扫描电镜测试结果差别小于0.02 nm/s。对时间分辨RA曲线分析发现,生长温度对GaAs表面原子结构产生了影响。 相似文献
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《Superlattices and Microstructures》1995,17(4):351-354
A theoretical model is proposed to describe doped nonabrupt GaAs/AlxGa1-xAs heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface effects are important in the case of high doping levels, and wide GaAs/AlxGa1-xAs interfaces. 相似文献
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《Superlattices and Microstructures》1994,15(2):203
Transmission properties of electrons through GaAs/AlxGa1-xAs symmetrical double-barriers with abrupt and nonabrupt interfaces are calculated and compared. The interface potential and carrier effective-mass are obtained assuming a linear variation of the aluminium molar fraction in the transition regions GaAs ⇔ AlxGa1-xAs. When the electron energy E0,-1,e is smaller than the double-barrier height Vx0 , changes in the internal interfaces widths shift tunneling resonances, while changes in the external interfaces increase the energy widths of the resonant transmission peaks. When E0,-1,e > Vx0, both external and internal interfaces modify remarkably the transmission of nonabrupt GaAs/AlxGa1-xAs double-barriers when compared with the abrupt double-barrier, even if their widths are as small as two GaAs lattice parameters. However, the first transmission peaks of abrupt and nonabrupt GaAs/AlxGa1-xAs double-barriers are very similar, except when the interface widths are greater than four lattice parameters. 相似文献
14.
详细讨论了GaAs/AlxGa1-xAs球形量子点内的单电子束缚能级随量子点半径、Al组分以及外电场的变化规律,并计算了考虑量子点内外电子有效质量不同后对电子能级的修正. 另外,用解析和平面波展开两种方法对球形量子点内的电子能级进行了计算,并对计算结果做了比较,发现它们符合的很好. 结论和方法为量子点的研究和应用提供了有益的信息和指导.
关键词:
球形量子点
解析方法
平面波展开方法
有效质量 相似文献
15.
为了探索高性能透射式GaAs光电阴极的特征结构,对光电阴极量子效率公式进行了光谱反射率与短波截止限的修正,并利用修正后的公式对ITT透射式GaAs光电阴极量子效率(≈43%)曲线进行了拟合,得到拟合相对误差小于5%时的结构参数为:窗口层Ga1-xAlxAs的厚度介于0.3-0.5 μm,Al组分x值为0.7,发射层GaAs的厚度介于1.1-1.4 μm.另外,根据拟合结果讨论了均匀掺杂透射式GaAs光电阴极的优化结构参数,如果光电阴极具有0.4 μm厚的Ga1-xAlxAs(x=0.7)窗口层和1.1-1.5 μm厚的GaAs发射层,则积分灵敏度可以达到2350 μA/lm以上.
关键词:
透射式GaAs光电阴极
量子效率
积分灵敏度
光学性能 相似文献
16.
《Superlattices and Microstructures》1995,17(2):235-239
The influence of nonabrupt interfaces in the high electric field resonances of single AlxGa1-xAs barriers in GaAs is studied. The resonances are considerably smoothed when interfacial widths are as small as two GaAs lattice parameters. Several resonances in the transmission coefficient of a 0.154 eV electron through a non-abrupt AlxGa1-xAs single barrier in GaAs, with height of 240 meV and 200 Å of width, can even disappear if interfacial widths of four GaAs lattice parameters are considered. Interface effects are shown to be more important for heavy holes than for electrons. 相似文献
17.
Nonradiative (surface and bulk) polaritons in a semiconductor structure composed of two heterojunctions GaAs/AlxGa1?x As are investigated under the integer quantum Hall effect (IQHE) conditions. The dispersive, polarization, and energy characteristics of these polaritons are determined including energy dissipation in the two-dimensional electron semiconductor layers. The phase and group velocities of surface and bulk polaritons are shown to be quantized under the IQHE conditions. It is found that resonance coupling of two surface polariton modes may occur in double GaAs/AlxGa1?x As heterojunctions. Possible experimental observation of nonradiative polaritons is discussed. 相似文献
18.
Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well
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We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer. 相似文献
19.
The heating of electrons in an AlxGa1−x
As/GaAs (x>0.42) heterostructure in a lateral (directed along the heterointerfaces) electric field is studied. Population inversion
on the size-quantization subbands of the Γ valley of GaAs and a giant population inversion between the X-valley states of
AlxGa1−x
As and Γ-valley states of GaAs are predicted. The possibility of using these inversions for achieving stimulated IR emission
is discussed.
Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 73–77 (10 July 1998) 相似文献
20.
《Superlattices and Microstructures》1996,20(2):155-161
The influence of growth patterns in the transmission properties of nonabrupt GaAs/AlxGa1−xAs heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission depends on the type of the aluminum molar fraction variation through the interface. A study of the role of the interface width in carrier transmission is done for each compositional growth profile. 相似文献