Surface reactions of monoethylgermane on Si(100)-(2×1)

The adsorption and decomposition of monoethylgermane (GeH₃Et) on the Si(100)-(2×1) surface was investigated with the intent of elucidating the surface processes leading to the deposition of germanium. The low-temperature adsorption of the molecule was explored, as well as its thermal decomposition. H₂ and C₂H₄ are observed as the desorption products in temperature-programmed desorption experiments. The ethylene is produced by a hydride elimination reaction within the adsorbed ethyl groups. The amount of Ge which can be deposited in a reaction cycle is correlated with the number of sites occupied by the ethyl groups upon the dissociation of GeH₃Et.     

A comparative infrared study of H2O reactivity on Si(1 0 0)-(2 × 1), (2 × 1)-H, (1 × 1)-H and (3 × 1)-H surfaces

The water adsorption on the bare and H-terminated Si(1 0 0) surfaces has been studied by the BML-IRRAS technique. It is found that H-terminated surfaces are much less reactive compared to the bare silicon surfaces. The (1 × 1)-H and (3 × 1)-H surfaces show similar and less reactivity pattern compared to the (2 × 1)-H surface. At higher exposures, the water reaction with coupled monohydride species provides an effective channel for oxygen insertion into the back bonds of dihydride species. It is not attributed to the H–Si–Si–H + H₂O → H–S–Si–OH + H₂, which could give rise to the characteristic Si–H and Si–OH modes, respectively at 2081 and 921 cm⁻¹. A more suitable reaction mechanism involving a metastable species, H–Si–Si–H + H₂O → H₂Si  HO–Si–H (metastable) explains well the bending modes of oxygen inserted silicon dihydride species which are observed relatively strongly in the reaction of water with H-terminated Si(1 0 0) surfaces.     

Surface structure evolution during Sb adsorption on Si(1 1 1)–In(4×1) reconstruction

The Sb adsorption process on the Si(1 1 1)–In(4×1) surface phase was studied in the temperature range 200–400 °C. The formation of a Si(1 1 1)–InSb (2×2) structure was observed between 0.5 and 0.7 ML of Sb. This reconstruction decomposes when the Sb coverage approaches 1 ML and Sb atoms rearrange to and (2×1) reconstructions; released In atoms agglomerate into islands of irregular shapes. During the phase transition process from InSb(2×2) to Sb (θ_Sb>0.7 ML), we observed the formation of a metastable (4×2) structure. Possible atomic arrangements of the InSb(2×2) and metastable (4×2) phases were discussed.     

Comment on: “Quantum exam” [Phys. Lett. A 350 (2006) 174]

In the Letter [B.A. Nguyen, Phys. Lett. A 350 (2006) 174], a quantum exam protocol was presented. Here we show a cheating protocol, by which any student can get the other students' solution without being detected. Then we propose a possible modified protocol against this attacking strategy.     

Erratum to “Master equation for structured reservoirs” [Photonics Nanostruct.: Fundam. Appl. 2/3 (2004) 167]

In this work we generalize the formalism developed in our previous work [D. Mogilevtsev, S. Kilin, S.B. Cavalcanti, PNFA (2–3) (2004) 161]. We derive a master equation suitable to describe atom-field interaction in structured reservoirs, particulary those that exhibit ‘freezing’ of spontaneous decay as well as atom-field bound states. For a wide range of reservoir densities-of-states, this equation can be reduced to the Markovian form. In this work we extend the range of applicability of the method to times comparable to those of the atom-field bound state formation. We discuss novel features that such an extension brings forth and confirm predictions made in our previous work, namely, the stationary positive atomic inversion, a possibility of in-reservoir coherent control of the atom-field bound state and bipartite character of such a state in the absence of external perturbations.     

Surface structure and electron density dependence of scattered Ne ion fractions from the Si(1 0 0)-(2×1) surface

The magnitudes and azimuthal anisotropies of 4 keV Ne⁺ scattered ion fractions from the Si(1 0 0)-(2×1) two-domain surface have been measured by means of time-of-flight scattering and recoiling spectrometry. The absolute values of these ion fractions as well as their dependence on surface structure and electron density have been determined. By investigating the trajectories of the scattered Ne⁺, a clear correlation is demonstrated between these experimentally observed surviving ion fractions of Ne⁺ and the fraction of ions that scatters from the topmost layer of the surface. This is interpreted in terms of a model in which the neutralization probability of Ne⁺ is proportional to the local substrate electronic charge density.     

Tetra-σ bonding adsorption of pyridine on Si(1 0 0)-2 × 1

We studied adsorption of pyridine on Si(1 0 0) at room temperature using high resolution photoemission spectroscopy (PES) and near edge X-ray adsorption fine structure (NEXAFS) in the partial electron yield (PEY) mode. The Si 2p, C 1s, N 1s spectra of pyridine on Si(1 0 0) showed that pyridine is chemisorbed on Si(1 0 0)-2 × 1 through the formation of the tetra-σ-bonded structure with the N atom and three C atoms. NEXAFS was conducted to characterize the adsorption geometry of pyridine on Si(1 0 0). The π* orbital of CC bond showed a good angle dependence in C K-edge NEXAFS spectra, and we were able to estimate the adsorption angle between chemisorbed pyridine of CC bond and the Si(1 0 0) surface using an analytical solution of NEXAFS intensity. We find the coexistence of two different tight bridges with the adsorption angles 42 ± 2° and 45 ± 2° with almost equal abundance.     

A novel (8 × 4) superstructure as precursor to the c(4 × 4) phase during Sb/Si(0 0 1) desorption

The role of kinetics in the superstructure formation of the Sb/Si(0 0 1) system is studied using in situ surface sensitive techniques such as low energy electron diffraction, Auger electron spectroscopy and electron energy loss spectroscopy. Sb adsorbs epitaxially at room-temperature on a double-domain (DD) 2 × 1 reconstructed Si(0 0 1) surface at a flux rate of 0.06 ML/min. During desorption, multilayer Sb agglomerates on a stable Sb monolayer (ML) in a DD (2 × 1) phase before desorbing. The stable monolayer desorbs in the 600–850 °C temperature range, yielding DD (2 × 1), (8 × 4), c(4 × 4), DD (2 × 1) phases before retrieving the clean Si(0 0 1)-DD (2 × 1) surface. The stable 0.6-ML (8 × 4) phase here is a precursor phase to the recently reported 0.25-ML c(4 × 4) surface phase, and is reported for the first time.