Effect of Pb on the electrical properties of a-Ge20Se80 glasses

The present paper reports the effect of Pb impurity (low ∼2 at% and high ∼10 at%) on the ac conductivity (σ_ac) of a-Ge₂₀Se₈₀ glass. Frequency-dependent ac conductance and capacitance of the samples over a frequency range ∼100 Hz to 50 kHz have been taken in the temperature range ∼268 to 358 K. At frequency 2 kHz and temperature 298 K, the value of σ_ac increases at low as well as at higher concentration of Pb. σ_ac is proportional to ω^s for undoped and doped samples. The value of frequency exponent (s) decreases as the temperature increases. The static permittivity (ε_s) increases at both Pb concentrations. These results have been explained on the basis of some structural changes at low and higher concentration of Pb impurity.     

Spectral hole burning and fluorescence in femtosecond laser induced Sm-doped glasses

The femtosecond laser was used to irradiate sol-gel derived Sm³⁺-doped Al₂O₃-SiO₂ glasses, in which the Sm³⁺ was reduced into Sm²⁺ ions. The fluorescence line narrowing was applied to investigate the coordination sphere of the Sm²⁺ ion. The spectral hole burning was performed on ⁷F₀→⁵D₀ transition of the Sm²⁺. The depth and width of the burnt holes were ∼27% and ∼4 cm⁻¹ FWHM at 7 K, respectively. Hole spectra were stable up to room temperature. The hole-burning efficiency was superior to that of Sm²⁺ in H₂ treated glasses and comparable to that in X-ray in terms of hole-burning dynamics.     

Atomic topology and radial distribution functions of a-SiNx alloys: ab initio simulations

Random structures of amorphous silicon-nitrogen alloys, a-SiN_x, are obtained for several values of x from 0 to the nearly stoichiometric composition of x=1.29, using a new ab initio thermal procedure based on a Harris-functional code and periodically continued cells with 64 atoms. Partial radial features are reported with no experimental counterparts for comparison, whereas the total radial distribution functions agree very well with the few existing experiments. Our average coordination numbers also agree very well with experiment. These results, being predictive, may stimulate further experimental and theoretical studies.     

DC conductivity of silver vanadium tellurite glasses

The mixed electronic-ionic conduction in 0.5[xAg₂O-(1−x)V₂O₅]-0.5TeO₂ glasses with x=0.1-0.8 has been investigated over a wide temperature range (70-425 K). The mechanism of dc conductivity changes from predominantly electronic to ionic within the 30?mol% Ag₂O?40 range; it is correlated with the underlying change in glass structure. The temperature dependence of electronic conductivity has been analyzed quantitatively to determine the applicability of various models of conduction in amorphous semiconducting glasses. At high temperature, T>θ_D/2 (where θ_D is the Debye temperature) the electronic dc conductivity is due to non-adiabatic small polaron hopping of electrons for 0.1?x?0.5. The density of states at Fermi level is estimated to be N(E_F)≈10¹⁹-10²⁰ eV⁻¹ cm⁻³. The carrier density is of the order of 10¹⁹ cm⁻³, with mobility ≈2.3×10⁻⁷-8.6×10⁻⁹ cm² V⁻¹ s⁻¹ at 300 K. The electronic dc conductivity within the whole range of temperature is best described in terms of Triberis-Friedman percolation model. For 0.6?x?0.8, the predominantly ionic dc conductivity is described well by the Anderson-Stuart model.     

Derivation of quantum yields for visible emission transitions of Sm in heavy metal tellurite glass

Under the pumping of violet lighting emitting diode, quantum yields for multichannel transition emissions have been determined in Sm³⁺-doped heavy metal tellurite glass for the first time. For the derivation, the necessary fluorescence spectra were measured and calibrated in an integrating sphere connected to a CCD detector with a 400 μm-core optical fiber. The spectral power distribution of the sample was derived from the measured spectra first, and then the quantum yields of the visible emissions of Sm³⁺ were calculated based on the distribution. The total quantum yield for four emission transitions of Sm³⁺ in visible region is 4.07%. Integrating sphere with a CCD detector is proven to be a reliable and reproducible method to characterize luminescence and laser materials.     

Photoluminescence study of manganese in AlSb

We have investigated Czochralski-grown manganese-doped AlSb by low-temperature photoluminescence spectroscopy. Discrete donor-acceptor pair lines are resolved, which involve the Mn acceptor. A Mn acceptor binding energy (E _A =92±5 meV) is deduced from the donor-acceptor pair luminescence.     

Structural, Optical and Electrical Properties of Hydrogen-Doped Amorphous GaAs Thin Films

Amorphous CaAs films are deposited on substrates of quartz glass and sificon by rf magnetron sputtering technique in different gas ambient. First, the amorphous structure of the prepared samples is identified by x-ray diffraction. Second, analysis by radial distribution function and pair correlation function method is established to characterize the microstructure of the samples. Then, the content and bond type of hydrogen are analysed using Fourier transform infrared absorption spectroscopy. It is found that the bonded hydrogen content increases with increasing partial pressure PH of H2. However, the hydrogen content saturates at PH 〉 1 × 10^-1 Pa. Hydrogen addition shills the optical absorption edge to higher energy, decreases the dark conductivity and improves the photo-sensitivity. The optical gap, dark conductivity and photo-sensitivity of the films are dependent on the bonded hydrogen content. These results demonstrate that hydrogen has obvious passivation effects on rf sputtered amorphous GaAs thin films.     

Jahn--Teller Distortion of the Zinc Vacancy in ZnGeP2

A symmetry analysis and a simple dangling bond model are presented for the VZn^- in ZnGeP2, identifying a possible Jahn-Teller distortion mechanism which could naturally explain the localization of the defect wavefunction on two of the nearest-neighbouring P atoms, as deduced for the electron nuclear double resonance experiments.     

Optical and FTIR properties of Se93−XZn2Te5InX chalcogenide glasses

In this work, we report the optical properties of bulk Se_93−XZn₂Te₅In_X (X=0, 2, 4, 6 and 10) chalcogenide glasses. Refractive index, extinction coefficient, real dielectric constant (ε′), imaginary dielectric constant (ε″), absorption coefficient (α) and energy band gap were obtained from analysis of common range (250-1100 nm) UV/Visible transmittance spectrum. Besides, transmission percentages were obtained from FTIR spectra in wave number range 4000-400 cm⁻¹.The concentration dependence structural phenomena have been explained with help of average coordination 〈z〉.     

Effect of H2 and O2 plasma etching treatment on the surface of diamond-like carbon thin film

In this study, we investigated the surface properties of diamond-like carbon (DLC) films for biomedical applications through plasma etching treatment using oxygen (O₂) and hydrogen (H₂) gas. The synthesis and post-plasma etching treatment of DLC films were carried out by 13.56 MHz RF plasma enhanced chemical vapor deposition (PECVD) system. In order to characterize the surface of DLC films, they were etched to a thickness of approximately 100 nm and were compared with an as-deposited DLC film. We obtained the optimum condition through power variation, at which the etching rate by H₂ and O₂ was 30 and 80 nm/min, respectively. The structural and chemical properties of these thin films after the plasma etching treatment were evaluated by Raman and Fourier transform infrared (FT-IR) spectroscopy. In the case of as-deposited and H₂ plasma etching-treated DLC film, the contact angle was 86.4° and 83.7°, respectively, whereas it was reduced to 35.5° in the etching-treated DLC film in O₂ plasma. The surface roughness of plasma etching-treated DLC with H₂ or O₂ was maintained smooth at 0.1 nm. These results indicated that the surface of the etching-treated DLC film in O₂ plasma was hydrophilic as well as smooth.     

Optical properties of lithium barium haloborate glasses

Lithium haloborate glasses have been prepared according to the formula (70−y)B₂O₃-30BaF2-yLiX where y=0, 5, 10, 15 and 20 mol% and X=F, Cl and Br. The UV absorption spectra have been recorded at room temperature. The optical energy band gap E_opt and Urbach energy E_tail was determined. Increasing concentration of LiX in the glass shifts the UV cutoff to lower energy and decreases both E_opt and E_tail. The shift in UV cutoff and the decrease of E_opt and E_tail are maximum in the range 0-5 mol% LiX. The decrease of E_opt increases going from F, Cl to Br, whereas the decrease of E_tail increases going from Br, Cl to F. At higher LiX concentrations Urbach energy E_tail increases again. The behavior of E_opt has been correlated with the B-O bond length of the studied glasses. The decrease of E_opt and E_tail is due to the increase of nonbridging oxygen (NBO) concentration with increase of LiX content. The increase of E_tail at higher concentrations is attributed to the halide ion accumulation in the interstitial positions and to the formation of orthoborate groups. Refractive index, which is measured and calculated, molar refraction and polarizability are all correlated with the composition of the glasses.     

Photoluminescence of the ZnSe single crystals doped by thermal diffusion of nitrogen

Photoluminescence (PL) spectra of ZnSe single crystals annealed in different ambients containing molecular nitrogen are investigated. The compensating activity of N impurity in n-ZnSe crystals is shown. It is caused by the formation of N_Se acceptor centers, having 101-108 meV activation energy. The intensity of amplification of both long-wave luminescence spectra bands and the edge luminescence spectra bands caused by the presence of nitrogen in annealing medium is investigated. The presented results allow one to assign the long-wave luminescence to deep acceptors caused by uncontrollable impurities, and the relevant bands of the edge luminescence spectra to the excitons bound with the same deep acceptors. The model explaining the transformations of the luminescent properties of ZnSe crystals by means of nitrogen impurity doping is proposed. The model considers the presence of donors having 75 meV activation energy, acceptors having 220-720 meV activation energy and centers having levels localized near the middle of the band gap.     

On photoluminescence in HgGa2S4

In this paper, we investigate the kinetics of photoluminescence in excited crystals of HgGa₂S₄ which have recently been proposed for implementing tunable luminescent devices. From photoluminescence experiments, performed at various temperatures and excitation powers, it appears that two kinds of radiative recombination processes take place during crystal excitation. These originate two bands in emission spectra which were resolved by means of a fitting procedure. The dependencies of these bands on temperature and excitation power density are explained by means of a specific kinetic model. A broad band, peaking at about 1.8 eV, is ascribed to electron-hole tunnel recombinations occurring in associated donor-acceptor pairs, according to a Prener-Williams scheme. The second narrow band, peaking at about 2.3 eV, is ascribed to electron-hole recombinations occurring in centres presenting short () and long-life () excited states. At room temperature, owing to thermally activated relaxation from short- to long-life states, these centres saturate under relatively low excitation powers. The tunability of photoluminescence is a consequence of competition between monomolecular and bimolecular recombination processes.     

Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra

Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe （x ≈ 0.3）. The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285℃/16 h ＋ 240℃/48h, of which the ionization energy has been determined to be about lO.5 meV, slightly smaller than that of intrinsic VHg （about 14.5 meV）. However, the higher activation temperature （e.g. 400℃） at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This couM give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.     

Photoluminescence and absorption in sol-gel-derived ZnO films

Highly c-axis-oriented ZnO films were obtained on corning glass substrate by sol-gel technique. The characteristics of photoluminescence (PL) of ZnO, as well as the exciton absorption in the absorption (UV) spectra are closely related to the post-annealing treatment. The difference between PL peak position and the absorption edge, designated as Stokes shift, is found to decrease with the increase of annealing temperature. The minimum Stokes shift is about 150 meV. The decrease of Stokes shift is attributed to the decrease in carrier concentration in ZnO film with annealing. X-ray diffraction, surface morphology and refractive index results indicate an improvement in crystalline quality with annealing. Annealed films also exhibit a green emission centered at ∼520 nm with activation energy of 0.89 eV. The green emission is attributed to the electron transition from the bottom of the conduction band to the antisite oxygen O_Zn defect levels.     

Photoluminescence of transition metal complexes in silicon

Results of luminescence studies on silicon doped with the 3d transition metals are reviewed. Spectra are observed after V, Cr, Mn, Fe, and Cu diffusion. We discuss the problems of center identifications, using the example of the CrB-pair luminescence. Level schemes for the optical transitions are discussed and correlated with electrical level positions of TM defects. Luminescent centers can be divided into two classes: CrB,CrGa, and Mn₄ are effective recombination centers with low quantum efficiencies, whereas Fe and Cu associated spectra show characteristics of exciton decay at isoelectronic centers, e.g. show a high quantum efficiency. The phonon structure of the spectra is discussed, and it is shown that the local mode energies of the centers follow a systematic trend.     

Photoluminescence properties of trace amounts of Pr and Tb in yttria-stabilized zirconia

We have investigated the photoluminescence (PL) properties of trace amounts of Pr and Tb in single-crystal samples of yttria-stabilized zironia (YSZ), and found that Pr of the order of 10⁻⁶ mass% and Tb of the order of 10⁻⁵ mass% in YSZ can be detected by the PL spectroscopy. The PL spectra of the YSZ samples for the 280 nm excitation were comprised of several peaks and a broad emission. The peaks were attributed to transitions of Pr³⁺ and Tb³⁺ in the YSZ samples, whereas the broad emission seemed to be attributed to the yttria-associated oxygen vacancies. The peak intensities corresponded to the amounts of Pr and Tb in the YSZ samples, the amounts of which were analyzed by glow discharge mass spectrometry. In the PL excitation spectra, but not in the photoabsorption spectra, small peaks at 376 and 381 nm were observed, and were attributed to the transitions of Tb³⁺ in the YSZ samples. The results of the PL excitation spectra corresponding to the Pr³⁺ line emissions suggest that the charge transfer occurs between the YSZ and Pr ion in it. The trace amounts of these lanthanoids in YSZ would disturb the decay process of the photoinduced electrons to the yttria-associated oxygen vacancies.     

Near-infrared emissions with widely different widths in two kinds of Er-doped oxide glasses with high refractive indices and low phonon energies

Er³⁺-doped alkali-barium-bismuth-tellurite (LKBBT) and alkali-barium-bismuth-gallate (LKBBG) glasses with high refractive indices and low phonon energies have been designed, fabricated, characterized and compared. Intense 1.53 μm emissions with widely different widths in the two kinds of glasses were observed and recorded under 980 nm diode laser excitation. The full-widths at half-maximum of the 1.53 μm emission bands in LKBBT and LKBBG glasses are 58 and 40 nm, and the lifetimes of them were measured to be 3.21 and 3.97 ms, respectively. The quantum efficiencies for the ⁴I_13/2 level in both glasses are almost 100%. The 1.53 μm broad and narrow emissions with high spontaneous emission probabilities and large emission cross-sections indicate that Er³⁺-doped LKBBT and LKBBG glasses are suitable materials in developing broadband optical amplifier and infrared laser, respectively.     

Dielectric properties of P2O5-Na2O-Li2O glasses containing WO3, CoO or Fe2O3

The aim of this work was to study some polarization mechanisms in phosphate glasses containing different transition metal oxides, performed at radio frequency (100 kHz) and in the microwave region (9 GHz). Cobalt, iron and tungsten oxides were chosen for the present investigation. The results show that the dielectric constant increases linearly with increasing Co concentration, whereas for iron and tungsten ions, the dielectric constant values were found to decrease up to a given concentration and further, increase for higher concentration of W and Fe. This anomaly was observed both at 100 kHz and 9.00 GHz and was attributed to the valence state of the transition metal ions in the glass structure. The dielectric constant is lower in the microwave region, due to structural relaxation mechanisms.     

DC and AC conductivities of (As2S3)100−x(AsSe0.5Te0.5I)x chalcogenide glasses

The DC and AC conductivities of samples from the system (As₂S₃)_100−x(AsSe_0.5Te_0.5I)_x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10⁻²-10⁻¹ eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.