Structural and vibrational properties of dilute GaNxAs1−x(P1−x)

We report a comprehensive analyzes of the Fourier transform infrared (FTIR) absorption and Raman scattering data on the structural and vibrational properties of dilute ternary GaAs_1−xN_x,[GaP_1−xN_x] (x<0.03) alloys grown on GaAs [GaP] by metal organic chemical vapor deposition (MOCVD) and solid source molecular beam epitaxy (MBE). By using realistic total energy and lattice dynamical calculations, the origin of experimentally observed N-induced vibrational features are characterized. Useful information is obtained about the structural stability, vibrational frequencies, lattice relaxations and compositional disorder in GaNAs (GaNP) alloys. At lower composition (x<0.015) most of the N atoms occupy the As [P] sublattice {N_As[N_P]}—they prefer moving out of their substitutional sites to more energetically favorable locations at higher x. Our results for the N-isotopic shifts of local mode frequencies compare favorably well with the existing FTIR data.     

Structural characteristics and morphology of SmxCe1−xO2−x/2 thin films

Effect of the deposition temperature (200 and 500 °C) and composition of Sm_xCe_1−xO_2−x/2 (x = 0, 10.9–15.9 mol%) thin films prepared by electron beam physical vapor deposition (EB-PVD) and Ar⁺ ion beam assisted deposition (IBAD) combined with EB-PVD on structural characteristics and morphology/microstructure was investigated. The X-ray photoelectron spectroscopy (XPS) of the surface and electron probe microanalysis (EPMA) of the bulk of the film revealed the dominant occurrence of Ce⁴⁺ oxidation state, suggesting the presence of CeO₂ phase, which was confirmed by X-ray diffraction (XRD). The Ce³⁺ oxidation states corresponding to Ce₂O₃ phase were in minority. The XRD and scanning electron microscopy (SEM) showed the polycrystalline columnar structure and a rooftop morphology of the surface. Effects of the preparation conditions (temperature, composition, IBAD) on the lattice parameter, grain size, perfection of the columnar growth and its impact on the surface morphology are analyzed and discussed.     

Electrical conduction and optical properties of amorphous (Sb2Se3)100−xSnx thin films

The variation of DC electrical conductivity and the optical properties of thermally evaporated a- (Sb₂Se₃)_100−xSn_x thin films with temperature have been studied. It is found that the thermal activation energy decreases, while the optical gap first increases (up to x=1) and then decreases, with the increase in Sn content. These results have been explained by taking into consideration the structural modifications induced by the incorporation of Sn into the parent alloy. The variation in the conductivity prefactor (σ_o) with Sn addition indicates a change in the dominant conduction transport mechanism from extended states to localized states. An experimental correlation between the activation energy and the pre-exponential factor has been observed, indicating the validity of Meyer–Neldel rule in the studied samples.     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted Al_xGa_1−xN with different AlN contents (in the range 0≤x≤0.2) and from implanted In_xAl_1−xN with different InN contents (x=0.13 and 0.19) close to the lattice match with GaN. The Tm³⁺ emission spectrum depends critically on the host material. The blue emission from Al_xGa_1−xN:Tm peaks in intensity for an AlN content of x0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 C. The blue emission from In_0.13Al_0.87N:Tm, annealed at 1200 C, is more than ten times stronger than that from Al_xGa_1−xN:Tm, x≤0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.     

Highly strained InxGa(1−x)As−InyAl(1−y)As (x>0.8,y<0.3) layers for short wavelength QWIP and QCL structures grown by MBE

Highly strained quantum cascade laser (QCL) and quantum well infrared photodetector (QWIPs) structures based on In_xGa_(1−x)As−In_yAl_(1−y)As (x>0.8,y<0.3) layers have been grown by molecular beam epitaxy. Conditions of exact stoichiometric growth were used at a temperature of 420°C to produce structures that are suitable for both emission and detection in the 2–5 μm mid-infrared regime. High structural integrity, as assessed by double crystal X-ray diffraction, room temperature photoluminescence and electrical characteristics were observed. Strong room temperature intersubband absorption in highly tensile strained and strain-compensated In_0.84Ga_0.16As/AlAs/In_0.52Al_0.48As double barrier quantum wells grown on InP substrates is demonstrated. Γ–Γ intersubband transitions have been observed across a wide range of the mid-infrared spectrum (2–7 μm) in three structures of differing In_0.84Ga_0.16As well width (30, 45, and 80 Å). We demonstrate short-wavelength IR, intersubband operation in both detection and emission for application in QC and QWIP structures. By pushing the InGaAs–InAlAs system to its ultimate limit, we have obtained the highest band offsets that are theoretically possible in this system both for the Γ–Γ bands and the Γ–X bands, thereby opening up the way for both high power and high efficiency coupled with short-wavelength operation at room temperature. The versatility of this material system and technique in covering a wide range of the infrared spectrum is thus demonstrated.     

Growth and properties of ferromagnetic In1−xMnxSb alloys

We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In_1−xMn_xSb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In_1−xMn_xSb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Magnetic properties and specific heat of LaMn1−xTixO3+δ (0<x0.2)

We present a magnetic study of the insulating perovskite LaMn_1−xTi_xO_3+δ (0<x0.2) including measurements of magnetization, susceptibility, and magnetic relaxation. The Curie temperature was found to decrease with increasing content of Ti. Two distinct magnetic transitions, irreversibility, non-exponential relaxation and aging effects confirm a reentrant spin–glass state for x=0.2. The time decay of the magnetization has an algebraic functional form for times up to 2 h. The specific heat also displays characteristic features of a spin–glass system by a linear low-temperature dependence and a broadened peak near the temperature of the reentrant transition.     

Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−xNx alloys

High-pressure photoluminescence (PL) experiments (at 9 K) are reported for GaAs_1−xN_x/GaAs quantum wells having N compositions (x=0.0025, 0.004) in the dilute regime where the GaAs_1−xN_x alloy conduction band (CB) evolves rapidly by incorporation of N-pair states. Under increasing pressure, the PL spectra exhibit several new N-pair features that derive from CB-resonant states at 1 atm. Two of these features appear strongly at sub-band-gap energies for P29 kbar in the x=0.0025 sample, but are absent for all pressures in the x=0.004 sample. Several competing PL assignments due to bound-exciton recombination at NN_i pairs (i=1–4 is the anion separation) are considered in light of prior findings for N-doped (10¹⁷ cm⁻³) GaAs. The absence of certain PL features in the x=0.004 sample shows that N-pair states mix into the CB-continuum via a selective process, and this selectivity offers an important test for band-structure calculations in dilute GaAs_1−xN_x alloys.     

Structural properties and Raman spectroscopy of orthorhombic (Eu1−xPrx)0.6Sr0.4MnO3 (0≤x≤1.0)

The effect of Pr doping on structural properties and room temperature Raman spectroscopy measurements is investigated in manganites (Eu_1−xPr_x)_0.6Sr_0.4MnO₃ (0≤x≤1.0) with fixed carrier concentration. The result of the Rietveld refinement of x-ray powder diffraction shows that these compounds crystallize in an orthorhombic distorted structure with a space group Pnma. It is evident that, with increasing Pr substitution, three types of orthorhombic structures can be distinguished. The phonon frequencies of the three main peaks, in room temperature Raman-scattering measurements, have been discussed together with their structural characteristics, such as bond-length, bond-angles, and the change of orthorhombic structure type. With the increase of Pr content, the mode at 491  cm⁻¹ also shows a corresponding change. A step effect becomes evident, which seems to indicate the close dependence between the frequency shift of this mode and the change in crystal symmetry. This further supports the notion that the mode at 491  cm⁻¹ is closely correlated with the Jahn–Teller distortion. Moreover, we have found that the lowest frequency peak (assigned as an A_1g phonon mode) depends linearly on the tolerance factor t.     

High-resolution X-ray diffraction analysis of SnTe/Sn1−xEuxTe superlattices grown on (1 1 1) BaF2 substrates

A set of SnTe/Sn_1−xEu_xTe superlattice (SL) samples with increasing nominal Eu content x up to 0.28 was successfully grown on (1 1 1) BaF₂ substrates by molecular beam epitaxy. A complete structural characterization was performed by triple-axis X-ray diffractometry and reciprocal space mapping. The X-ray results showed that, despite the phase separation that normally occurs for unstrained Sn_1−xEu_xTe layers with x0.02, an SL stack with homogeneous individual layers can be formed for SL samples with a nominal Eu content up to 0.16. No SL satellite peak structure could be identified for samples with x values higher than 0.24. The structural parameters of the individual layers that compose the SL were determined using a best-fit simulation procedure which compared the calculated X-ray spectra to the measured (2 2 2) ω/2Θ scans. The strain information used in the simulation was obtained from the reciprocal space maps measured around the (2 2 4) lattice point.     

Energy band gaps for the GaxIn1−xAsyP1−y alloys lattice matched to different substrates

A pseudopotential formalism within the virtual crystal approximation in which the effects of composition disorder are involved is applied to the Ga_xIn_1−xAs_yP_1−y quaternary alloys in conditions of lattice matching to GaAs, InP and ZnSe substrates so as to predict their energy band gaps. Very good agreement is obtained between the calculated values and the available experimental data for the alloy lattice matched to InP and GaAs. The alloy is found to be a direct-gap semiconductor for all y compositions whatever the lattice matching to the substrates of interest. The (Γ→Γ) band-gap ranges and the ionicity character are found to depend considerably on the particular lattice-matched substrates suggesting therefore that, for an appropriate choice of y and the substrate, Ga_xIn_1−xAs_yP_1−y could provide more diverse opportunities to obtain desired band gaps, which opens up the possibility of discovering new electronic devices with special features and properties.     

Superconductivity magnetism and low temperature specific heat in YBa2(Cu1−xFex)3O7−δ with δ0 and δ1

Magnetic and low temperature specific heat measurements have been performed on iron doped YBa₂(Cu_1−xFe_x)₃O_7−δ samples with different oxygen contents (δ0 and δ1). Iron doping induces an orthorhombic to tetragonal transition and a decrease of both T_c and diamagnetic signal. Low temperature specific heat measurements reveal a Schottky type anomaly for δ0 samples with x=0.01 (1.8 K) and x=0.02 (3 K). This anomaly is attributed to magnetic interactions within iron limited chains. A numerical analysis of this effect is proposed.     

Structure and magnetostriction of RFex (1.6 x 2.0) and R(Fe1−yTiy)1.8 (y 0.2) alloys (R=Dy0.65Tb0.25Pr0.1)

Structure, Curie temperature and magnetostriction of RFe_x (1.6 x 2.0) and R(Fe_1−yTi_y)_1.8 (y 0.2) alloys (R=Dy_0.65Tb_0.25Pr_0.1) have been investigated using optical microscopy, X-ray diffraction, AC initial susceptibility and standard strain gauge techniques. The homogenized RFe_x alloys are found to be essentially single phase in the range of 1.8 x 1.85. The second phase is a rare-earth-rich phase when x 1.8, and (Dy, Tb, Pr)Fe₃ phase when x 1.85. X-ray diffraction indicates that the R(Fe_1−yTi_y)_1.8 alloys contain a small amount of Fe₂Ti phase when y 0.05, which increases with the increment of Ti content. The Curie temperature of R(Fe₁−_yTi_y)_1.8 alloys slightly enhances with increasing Ti concentration when y 0.05, then remains almost unchanged in the range of 0.05 y 0.20. The magnetostriction of RFe_x alloys is improved when x 1.80 and reduced by increasing Fe content when x 1.85. The magnetostriction of R(Fe_1−yTi_y)_1.8 alloys is lowered by increasing Ti content.     

Effect of structural defects on InSb/AlxIn1−x Sb quantum wells grown on GaAs (0 0 1) substrates

We investigate oriented abrupt steps (OASs), a type of surface defect in InSb/Al_xIn_1−xSb quantum-well (QW) samples grown on GaAs (0 0 1) substrates. Previous atomic force microscopy studies have reported that the OASs are oriented along the [1 1 0] and directions and have an inclination angle of 5°–15° with respect to the sample surface. Our plan-view and cross-sectional transmission electron microscopy analyses reveal that the OASs are the terminal edges of threading micro-twins at the sample surface. Hall effect measurements indicate that the density of OASs correlates with the electron mobility in the InSb QWs.     

Far-infrared spectra of Pb1−xMnxTe alloys

Far-infrared reflectivity spectra of Pb_1−xMn_xTe (0.0001x0.1) single crystals were measured in the 10–250 cm⁻¹ range at room temperature. The analysis of the far-infrared spectra was made by a fitting procedure based on the model of coupled oscillators. In spite of the strong plasmon–LO phonon interaction, we found that the long wavelength optical phonon modes of these mixed crystals showed an intermediate one–two mode behavior.     

Dispersive optical constants of glassy AsSe1−xTex system

The compositional dependence of the optical constants, the refractive index n, and the absorption index k, of the AsSe_1−xTe_x thin films with 0<x<1.0 were determined in the spectral range of 400–2500 nm. The maximum value of the refractive index n, is shifted toward the long wavelength by increasing the Te content in the examined system. The values of the forbidden energy gap of the system have been determined and were correlated with the type and the amount of chemical bonds formed by the increasing Te content in the AsSe_1−xTe_x glassy system. The value of the dispersion energy E_d exhibits low value at the composition containing the same atomic percent of Se and Te.     

Optical-field profiles in InxGa1−xN -MQW laser structures

In this paper, we calculated the optical fields for In_xGa_1−xN-multiquantum well (MQW) laser structures. Two different optical cavities are compared, the conventional step separate confinement heterostructure (Step) and a graded-index (GRIN) structure with a parabolic variation of the Al content in the Al_xGa_1−xN guide layers. A comparison is made regarding the confinement factor, near- and far-field patterns. An anomalous behavior for the confinement factor is observed in the structure, and it can be eliminated by choosing an appropriated combination of the layer’s thicknesses forming the waveguide. For Al_xGa_1−xN, an improved expression for the refractive index is presented, which shows better agreement with experimental data than previously reported expressions.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.