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1.
In the design of heteroepitaxial systems the knowledge of composition, strain and thickness of the various layers involved is of great importance. The determination of these structural parameters is among the applications most common in high-resolution X-ray diffraction. Numerical simulation of rocking curves has emerged as an important aid in the determination of the relevant structural parameters. Based upon the dynamical theory of X-ray diffraction a FORTRAN program has been written to simulate and refine structural parameters from rocking curve data. X-ray rocking curve analysis has been used to develop and optimize MOCVD-growth of GaxIn1-xP/GaAs heteroepitaxial systems. We observed superlattice peaks in samples of low misfit. With the aid of computer simulations we attribute these to unintentional periodic compositional fluctuations (Ga/In) of the order of 1%. 相似文献
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Lattice-matched InGaP epilayers on GaAs (001) and InGaP/GaAs heterojunction bipolar transistors (HBTs) were successfully grown by solid-source molecular beam epitaxy (SSMBE) with a GaP decomposition source. A 3 μm thick InGaP epilayer shows that low temperature photoluminescence (PL) peak energy is as large as 1.998 eV, full width at half maximum (FWHM) is 5.26 meV, which is the smallest ever reported, and X-ray diffraction (XRD) rocking curve linewidth is as narrow as that of GaAs substrate. The electron mobilities at room temperature of nominally undoped InGaP layers obtained by Hall measurements are comparable to similar InGaP epilayer grown by solid-source molecular beam epitaxy (SSMBE) with other sources or other growth techniques. The large area InGaP/GaAs HBTs show very good Dc characteristics. 相似文献
3.
本文讨论了GaAs/AlGaAs异质结界面的H线发光及其性能。用双晶X射线衍射及皮秒光致发光证明了H线与界面质量密切相关,并且有相似于激子跃迁的寿命行为。用限制于异质结界面势阱的二维电子(或空穴)与分布于GaAs边的三维空穴(或电子)组成的二维激子效应,解释了H线的实验结果。并讨论了不同外延生长的异质结与界面有关的发光行为。 相似文献
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GaAs/Ge的MOCVD生长研究 总被引:3,自引:3,他引:0
用常压MOCVD在Ge衬底上外延生长了GaAs单晶层,研究了GaAs和6e的极性与非极性材料异质外延生长,获得了质量优良的GaAs/Ge外延片,GaAs外延层X射线双晶衍射回摆曲线半高宽达16弧秒.10K下PL谱半峰宽为7meV.讨论了极性与非极性外延的界面反相畴问题和GaAs-Ge界面的Ga、Ge原子互扩散问题. 相似文献
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C. Marin T. Charvolin D. Braithwaite R. Calemczuk 《Physica C: Superconductivity and its Applications》1999,320(3-4):197-205
A centimeter size single crystal of La2−xSrxCuO4+δ (volume=1.32 cm3) with xSr=0.08 has been grown by the travelling-solvent floating-zone (TSFZ) method using a double ellipsoidal-type optical furnace as the heat source. The crystallised phase was checked solvent free by X-ray powder diffraction experiments, the crystal dimensions and quality being investigated by X-ray and neutron Laüe techniques. Several rocking curves of the Bragg peaks were performed by neutron diffraction giving a full width at half maximum (FWHM) of 0.200° for (006) reflection and clearly showing the presence of twin domains as expected for such an orthorhombic structure. The superconducting critical temperature of the as-grown crystal under 2 oxygen bar was determined by SQUID measurements with Tc=18–20 K. Thermal treatments at different oxygen pressures were carried out showing no significant improvement of the transition sharpness and the Tc value. Normal state susceptibility was also measured from 6 to 800 K for two different field orientations and can be interpreted as an antiferromagnetic insulating state behaviour. The resistivity measurements display an insulating behaviour perpendicular to the CuO2 planes and a metallic behaviour in the planes, with a high anisotropy ratio Rc/Rb350 at room temperature and a zero resistivity achieved at 27 K in both directions. The specific heat measurements have revealed no anomalies in the temperature range 15–300 K. 相似文献
8.
Epitaxial growth characteristics of α-MnS on GaAs(1 0 0) substrates have been investigated by X-ray diffraction and double crystal rocking curve measurements. Growth of stoichiometric α-MnS films has been performed by hot-wall epitaxy using Mn and ZnS as a source of sulfur. The films on GaAs(1 0 0) at low substrate temperature exhibit multiphase crystal structures of zincblende and rocksalt, and the main structure is changed to rocksalt with increasing substrate temperature. Photoluminescence spectrum of the α-MnS epilayer at 5 K exhibits broad emission bands, which are attributed to Mn2+ ions. The band gap energy of the α-MnS epilayer at room temperature was also estimated to be about 3.3 eV by reflection. 相似文献
9.
A method to drastically reduce dislocation density in a GaN film grown on an Si(111) substrate is newly developed. In this method, the SixNy interlayer which is deposited on an AlN buffer layer in situ is introduced to grow the GaN film laterally. The crack-free GaN film with thickness over 1.7 micron is grown on an Si(111) substrate successfully. Synthesized GaN epilayer is characterized by X-ray diffraction (XRD), atomic force microscope (AFM), and Raman spectrum. The test results show that the GaN crystal reveals a wurtzite structure with the <0001> crystal orientation and the full width at half maximum of the X-ray diffraction curve in the (0002) plane is as low as 403 arcsec for the GaN film grown on the Si substrate with an SixNy interlayer. In addition, Raman scattering is used to study the stress in the sample. The results indicate that the SixNy interlayer can more effectively accommodate the strain energy. So the dislocation density can be reduced drastically, and the crystal quality of GaN film can be greatly improved by introducing SixNy interlayer. 相似文献
10.
垂直腔面发射激光器的结构生长及特性研究 总被引:1,自引:1,他引:0
在偏〈111〉A 2°的GaAs (100) 衬底上生长了Al0.9Ga0.1As /Al0.2Ga0.8As周期结构的垂直腔面发射激光器(VCSEL)外延片P 型DBR的周期数为24.5对,N型DBR的周期数为34.5对.用光荧光 (PL) 谱、扫描电子显微镜 (SEM)和X射线双晶衍射 (XRD) 方法对VCSEL的光学特性和结构特性进行了分析室温量子阱材料的PL谱峰值波长为837.0 nm,半高宽达到28.9 nm在X射线双晶衍射回摆曲线中,除了“0”级衍射峰外,还观察到一级和二级卫星峰.“0”级双晶衍射峰的半高宽为12.56弧秒(″),衬底GaAs的衍射峰半高宽为11.79″.“0”级衍射峰半高宽与衬底GaAs的衍射峰半高宽比较接近,表明晶格具有很高的完整性.实验结果表明腔模波长为837.2 nm,腔模波长与PL谱峰值波长相匹配. 相似文献
11.
V. K. Dixit K. S. Keerthi H. L. Bhat Parthasarathi Bera M. S. Hegde 《Applied Surface Science》2003,220(1-4):321-326
The growth of epitaxial InBixAsySb(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBixAsySb(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar+ etching. It was observed that with successive Ar+ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi0.025As0.105Sb0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×104 cm2 V−1 s−1 and 8.07×1016 cm−3, respectively. 相似文献
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A comparative study of techniques for the characterization of alloy composition in Ga1-xAlxAs/GaAs single and multilayer structures has been carried out. Good agreement (x ± 0.015) is demonstrated between double-crystal X-ray diffraction and photovoltage spectroscopy measurements using the generally accepted calibration of Casey and Panish. A slightly modified form of the band gap versus composition curve is presented which further improves the agreement to x±0.005. Profiling conditions achieving linear SIMS Al profiles are reported, yielding compositions in agreement with PVS and X-ray within x+-0.01 (when calibrated at a single composition). A systematic discrepancy between results from the above techniques and in-situ RHEED oscillation measurements is reported. 相似文献
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采用溶胶凝胶法制备Bi1-xCaxFeO3 (x=0, 0.05, 0.1, 0.15, 0.2)陶瓷样品. X衍射图谱表明所有样品的主衍射峰均与纯相BiFeO3相符合且具有良好的晶体结构. 随着x的增大, Bi1-xCaxFeO3样品的主衍射峰由双峰(104)与(110) 逐渐重叠为单峰(110), 当x ≥0.15时, 样品呈现正方晶系结构; 扫描电镜形貌分析可知, 晶粒由原来的0.5 μm逐渐增大到2 μm. Bi1-xCaxFeO3样品介电常数和介电损耗随着x 的增加先增大而后减小. 当f=1 kHz, Bi0.9Ca0.1FeO3 的介电常数达到最大值, 是BiFeO3的7.5倍, 而Bi0.8Ca0.2FeO3的介电常数达到最小值, 仅仅是BiFeO3的十分之一. Bi1-xCaxFeO3样品所呈现的介电特性是由偶极子取向极化和空间电荷限制电流两种极化机理共同作用的结果. 随着Ca2+ 的引入, BiFeO3 样品的铁磁性显著提高. X射线光电子能谱图表明Fe2+和Fe3+ 共存于Bi1-xCaxFeO3 样品中, Fe2+/Fe3+比例随着Ca2+ 掺杂量的增加而增大, 证明Ca2+掺杂增加了Fe2+的含量, 增强BiFeO3的铁磁特性. 从M-T曲线观察到BiFeO3样品在878 K附近发生铁磁相变, 示差扫描量热法测试再次证明BiFeO3 在878 K发生相变. Ca2+掺杂使BiFeO3样品的TN略有变化而TM基本不变, 其主要原因是Fe-O-Fe反铁磁超交换作用的强弱和磁结构相对稳定. 相似文献
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Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction
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The analysis of threading dislocation density(TDD)in Ge-on-Si layer is critical for developing lasers,light emitting diodes(LEDs),photodetectors(PDs),modulators,waveguides,metal oxide semiconductor field effect transistors(MOS-FETs),and also the integration of Si-based monolithic photonics.The TDD of Ge epitaxial layer is analyzed by etching or transmission electron microscope(TEM).However,high-resolution x-ray diffraction(HR-XRD)rocking curve provides an optional method to analyze the TDD in Ge layer.The theory model of TDD measurement from rocking curves was first used in zinc-blende semiconductors.In this paper,this method is extended to the case of strained Ge-on-Si layers.The HR-XRD 2θ/ωscan is measured and Ge(004)single crystal rocking curve is utilized to calculate the TDD in strained Ge epitaxial layer.The rocking curve full width at half maximum(FWHM)broadening by incident beam divergence of the instrument,crystal size,and curvature of the crystal specimen is subtracted.The TDDs of samples A and B are calculated to be 1.41×10~8cm~(-2)and 6.47×10~8cm~(-2),respectively.In addition,we believe the TDDs calculated by this method to be the averaged dislocation density in the Ge epitaxial layer. 相似文献
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We studied the affection of thin (i.e., 0.2–0.8 nm) Ni films on hydrogen-terminated Si(1 1 1) substrate surface by using strain-sensitive X-ray diffraction. It was reported that Ni deposition onto hydrogen-terminated Si surface apparently does not cause film growth, but rather diffuses into the Si crystal, creating an “Ni diffusion layer” up to Ni deposition 0.8 nm thick. Measured rocking curves of the Si 1 1 3 reflection and integrated intensities of the rocking curves for the substrate provide information about the evolution of the strain field introduced near the substrate surface during Ni diffusion into the substrate. Comparing the measured and calculated rocking curves indicates that compression of the {1 1 1} spacing of the Si occurs gradually up to an Ni thickness of 0.6 nm, and that above this thickness, strain relaxation occurs.
We found that the slope of the integrated intensity of the rocking curve versus X-ray wavelength correlates to the strain field near the surface, in the same way that the shape of the rocking curves correlate to the strain field near the surface. Dynamical diffraction calculations indicate that measurement of the slope of the integrated intensity of the rocking curve versus X-ray wavelength is useful for strain analysis, because the dependence is not only sensitive to strain fields, but is also insensitive to the effect of absorption by the overlayer, which otherwise would cause deformation of the shape of the rocking curve. 相似文献
16.
Štefan Chromik Marianna Španková Jozef Liday Peter Lobotka 《Applied Surface Science》2008,254(12):3635-3637
Epitaxial MgO thin films have been grown on semiinsulating GaAs (0 0 1) substrates using electron beam (e-beam) evaporation. X-ray diffraction indicates c-axis oriented MgO with (0 0 2) reflection only and rocking curve widths ∼2.2-3°. Transmission electron microscopy (TEM) analyses confirm an epitaxial growth of the MgO films. We study the microstructure and the defects at the interface between the MgO film and the GaAs substrate. Auger electron Spectroscopy (AES) concentration depth profiles reveal no contamination of the MgO films by As and Ga at different temperatures of the deposition process. 相似文献
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Xiaoru Zhao Wenbin Wu Xuefeng Sun Xiao-Guang Li 《Physica C: Superconductivity and its Applications》1999,320(3-4):225-232
The variations of the high angle 00
peak-shape by means of X-ray l scans of the 00l fundamental reflections were investigated in detail for a highly oriented Bi2Sr2CaCu2Oy (Bi2212) crystal with sufficiently small intrinsic mosaicity and the same crystal annealed in air at 250, 300, 400, 600, and 750°C for 20 h in consequence. For the first time, we observed a new additional reflection almost overlapped original 00l fundamental reflection at annealing temperature below 400°C by X-ray diffraction measurement, which shows that there coexisted two sets of lattice periodicity in the c-direction of the annealed crystal. The new additional reflection appeared at 250°C and disappeared at 400°C. Its intensity was increased at 300°C. The measurements of the AC susceptibility, c-axis parameter and full width at half maximum (FWHM) of the 00
peaks showed that the new additional reflection was associated with the oxygen diffusion in CuO2 planes and the changes of strain field. The results provide the new experimental evidence that the structural distortion is more sensitive to the oxygen diffusion in CuO2 planes than to that in Bi–O layers. 相似文献
18.
本文以反射式高能电子衍射(RHEED)和其强度振荡为监测手段,在半绝缘GaAs衬底上成功地生长GaSb/AlSb/GaAs应变层结构,RHEED图样表明,GaSb正常生长时为Sb稳定的C(2×6)结构,AlSb为稳定的(1×3)结构,作者观察并记录GaSb,AlSb生长时的RHEED强度振荡,并利用它成功地生长10个周期的GaSb/AlSb超晶格,透射电子显微镜照片显示界面平整、清晰,采用较厚的AlSb过渡层及适当的生长条件,可在半绝缘GaAs衬底上生长出质量好的GaSb外延层,其X射线双晶衍射半峰宽小于
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Dislocation distributions and tilts in Al(Ga)InAs reverse-graded layers grown on misorientated GaAs substrates
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Compositionally undulating step-graded Al(Ga)In_xAs(x = 0.05–0.52) buffers with the following In P layer were grown by metal–organic chemical vapor deposition(MOCVD) on(001) GaAs with a 15°miscut. The dislocation distribution and tilts of the epilayers were examined using x-ray rocking curve and(004) reciprocal space maps(RSM) along two orthogonal 《110》 directions. The results suggested that such reverse-graded layers have different effects on α and βdislocations. A higher dislocation density was observed along the [110] direction and an epilayer tilt of-1.43°was attained in the [1-10] direction when a reverse-graded layer strategy was employed. However, for conventional step-graded samples,the dislocation density is normally higher along the [1-10] direction. 相似文献