MRCI studies on the electronic structure of AlN and AlN, and the electron affinity of AlN

Using multireference configuration-interaction methods and double to triple-zeta basis sets with semidiffuse and polarization functions, potential energies and spectroscopic constants for low-lying doublet, and quartet states of AlN⁻ were calculated. has R_e=3.280 bohr and . lies 0.17 eV above the ground state. Using an estimated electron affinity of 2.1 eV for AlN, four states of AlN⁻ are found to be stable, namely , , , and . Comparisons with the isovalent anions BN⁻ (three stable states) and AlP⁻ (seven stable states) are made. Photo-detachment of an electron from the state of AlN⁻ can lead to an accurate determination of the energy difference between the two close-lying lowest states of AlN, and , predicted here to be 0.09 eV apart.     

Measurement of the 4d-photoionization cross section via two-photon and two-step excitation in sodium

We present a comparison of the photoionization cross sections of the 4d excited levels of sodium by using the two-step resonant laser excitation and by two-photon non-resonant excitation from the ground state. Dye lasers, pumped with a Nd: YAG laser, have been used in conjunction with a thermionic diode ion detector to measure cross sections and the atomic densities as a function of laser energy. By applying the saturation technique, the measured values of the cross sections and atomic densities for the 4d level by two-photon excitation are 12.2(2.4) Mb and , respectively. Where as in the case of two-step excitation, the cross section and number density for the 4d level via 3p level and for the 4d levels via 3p level are determined as 9.6(1.9) Mb, and 12.8(2.5) Mb, , respectively.     

Time-resolved spectroscopy of Al, Ti, and Mo X pinch radiation using an X-ray streak camera

Time-resolved spectroscopic measurements of the radiation emitted from Al, Ti, and Mo X pinches have been made with time resolution. The radiation is emitted from micropinch plasmas with sizes of order in times in the 10- range. Spectra implied that dense, plasmas were produced, such as a lifetime, 1.5- electron temperature and near solid-density Ti plasma. The experimental systems and analysis methods are described in detail, including line ratio calculations for μm-scale Ti and Al plasmas with ion densities of 10¹⁹-10²⁴ cm⁻³ and electron temperatures.     

Profile imaging of reconstructed polar and non-polar surfaces of ZnO

The atomic scale surface structures of ZnO non-polar as well as and ±(0 0 0 1) polar surfaces have been directly imaged by high-resolution transmission electron microscopy (HRTEM). The observations were made on clean surfaces created by irradiating a single ZnO nanobelt using 400 keV electron beam in TEM, under which ZnO dots were grown epitaxially and in situ on the surface of the nanobelt. A technique is demonstrated for directly distinguishing the surface polarity of the ±(0 0 0 1) polar surfaces. For the non-polar surface, HRTEM images and simulation results indicate that the Zn ions in the first and second layer suffer from inward and outward relaxation, respectively; the oxygen ions in the first and second layer prefer shifting to vicinal Zn ions to shorten the bonding distance. For the oxygen-terminated polar surface, the oxygen ions at the outmost top layer were directly imaged. a × 2 reconstruction has also been observed at the surface, and its atomic structure has been proposed based on image simulation. Oxygen-terminated polar surface is flat and shows no detectable reconstruction. For the Zn-terminated (0 0 0 1) polar surface, HRTEM may indicate the existence of Zn vacancies and a possibly c-axis, random outward displacement of the top Zn ions. Our data tend to support the mechanism of removal of surface atoms for maintaining the stability of (0 0 0 1) polar surfaces.     

First-principles study of arsenic impurity clusters in molecular beam epitaxy (MBE) grown HgCdTe

The understanding of the microstructures of the arsenic tetramer , dimer , and singlet of HgCdTe is important to explain the high electrical compensation of molecular beam epitaxy (MBE) samples and the conversion to p-type behavior. The stable configurations were obtained from the first-principles calculations for the arsenic cluster defects [ (n=1, 2, and 4)] in as-grown HgCdTe. According to the defect formation energies calculated under Te-rich conditions, the most probable configurations of , , and have been established. For the optimized and the energy is favorable to combine in a nearest neighboring mercury vacancy , and the corresponding configurations can be used to explain the self-compensated n-type characteristics in as-grown materials. is likely to be more abundant than in as-grown materials, but arsenic atoms are more strongly bounded in than in , thus more substantial activation energy is needed for than that for . The atomic relaxations as well as the structural stability of the arsenic defects have also been investigated.