Low-temperature electrical conductivity and the superconductor-insulator transition induced by indium impurity states in (Pb0.5Sn0.5)1 ? xInxTe solid solutions

A study is reported of the low-temperature electrophysical (including superconducting) characteristics of the (Pb_0.5Sn_0.5)_{1 − x} In _x Te semiconducting solid solutions with an indium content variable within x = 0.05–0.20. A decrease in the impurity content x in the material has been found to bring about a decrease in the superconducting transition temperature T _c and the onset of an “insulating” state of the material. These effects manifest themselves in an increase in the low-temperature (T = 4.2 K) resistivity of (Pb_0.5Sn_0.5)_0.95In_0.05Te by more than three orders of magnitude as compared to that of (Pb_0.5Sn_0.5)_0.8In_0.2Te. A decrease in the In content in the solid solution also gives rise to a radical change in the shape of the temperature dependence of the electrical resistivity from a metallic behavior in the material with x = 0.20 (decrease in the electrical resistivity with decreasing temperature in the range 300–4.2 K) to a semiconducting behavior in a sample with x = 0.05 (exponential increase in the resistivity at T < 25 K). This transition to the insulating state with decreasing content of the impurity should be assigned to the displacement of the impurity band of quasi-local indium states toward the top of the light-hole valence band of the material and its emergence into the band gap of the solid solution.     

Dielectric spectroscopy of PbZr1 ? xTixO3 solid solutions (0.495 ≤ x ≤ 0.51) in a temperature range of 100–300 K at frequencies from 1 × 10?2 to 2 × 107 Hz

The behavior of the relative permittivity ɛ/ɛ₀ of PbZr_{1 − x} Ti _x O₃ (PZT) solid solutions (0.495 ≤ x ≤ 0.51) in the temperature range of 100–300 K at frequencies from 1 × 10⁻² to 2 × 10⁷ Hz was investigated. Diffuse, strongly relaxing maxima at T = 230−260 K (x = 0.495−0.505) and 150–160 K (x = 0.510) were observed in the PZT studied. The relaxation processes are well described by the Vogel-Fulcher law, and the dielectric spectra are approximated by the Cole-Cole formula.     

Impurity band in SnBi<Subscript>4</Subscript>Se<Subscript>7</Subscript>: thermoelectric power and electrical resistivity measurements

Thermoelectric power and electrical resistivity measurements on polycrystalline samples of Bi₂Se₃ and stoichiometric ternary compound in the quasi-binary system SnSe–Bi₂Se₃ in the temperature range of 90–420 K are presented and explained assuming the existence of an impurity band. The variation of the electron concentration with temperature above 300 K is explained in terms of the thermal activation of a shallow donor, by using a single conduction band model. The density of states effective mass m ^*=0.15m ₀ of the electrons, the activation energy of the donors, their concentration, and the compensation ratio are estimated. The temperature dependence of the electron mobility in conduction band is analyzed by taking into account the scattering of the charge carriers by acoustic phonon, optical phonon, and polar optical phonon as well as by alloy and ionized impurity modes. On the other hand, by considering the two-band model with electrons in both the conduction and impurity bands, the change in the electrical resistivity with temperature between 420 and 90 K is explained.     

EPR study of exchange interactions in the nonmagnetic Kondo system La1−x CexCu6

The EPR of paramagnetic impurities Gd³⁺ and Mn²⁺ was studied in nonmagnetic Kondo system La_1−x Ce_xCu₆ containing in the 1.6–200 K range. The exchange interaction parameters of gadolinium and manganese ions with conduction electrons, of cerium ions with conduction electrons and with one another, the Kondo temperature of cerium ions, and the temperature behavior of cerium-ion spin-fluctuation rate have been determined. A pseudogap in the density of states at the Fermi level has been detected in the CeCu₆ regular system, which is apparently due to s-f hybridization. This pseudogap can be destroyed by introducing an aluminum impurity, which induces strong conduction-electron scattering. It was also found that RKKY interaction among manganese ions in CeCu_6−y Mn_y is considerably stronger than it is in LaCu_6−y Mn_y, which implies enhancement of nonlocal spin susceptibility due to an f band contribution to conduction-electron states. Fiz. Tverd. Tela (St. Petersburg) 40, 593–599 (April 1998)     

Effect of constant-energy surface anisotropy on the thermoelectric figure-of-merit of the n-Bi2 (Te,Se,S)3 solid solutions

A study is reported of the thermoelectric and galvanomagnetic properties of n-Bi₂Te_3−x−y Se_xSe_y solid solutions for 0.12⩽x⩽0.36 and 0.12⩽y⩽0.21 within the 80–300 K temperature region. The thermoelectric figure-of-merit Z has been found to correlate with the parameters of the many-valley energy-band model including anisotropic carrier scattering. It is shown that a decrease in the constant-energy surface anisotropy and scattering anisotropy results in a growth of Z for optimum carrier concentrations in the solid solution. Fiz. Tverd. Tela (St. Petersburg) 41, 187–192 (February 1999)     

Synthesis, structure, and dielectric properties of KH2PO4 fractal aggregates

Macroscopic fractal aggregates of KH₂PH₄ (KDP) measuring up to 500 μm have been obtained. The fractal structure forms as a result of the precipitation of KDP particles from a supersaturated aqueous solution in the presence of a temperature gradient followed by a diffusioncontrolled mechanism of aggregation. The electron-microscopic analysis performed has shown that the fractals are formed predominantly from crystallites of the tetragonal modification measuring ∼1 μm. The dielectric constant (ɛ) of fractal KH₂PO₄ has been measured in the temperature range 80–300 K. A characteristic anomaly has been discovered on the ɛ(T) curve in the vicinity of 122 K, which attests to a ferroelectric phase transition. The absolute value of ɛ is significantly smaller than the components ɛ ₁₁ and ɛ ₃₃ for KH₂PO₄. Fiz. Tverd. Tela (St. Petersburg) 41, 2059–2061 (November 1999)     

Effect of Coulomb correlations in a variable-valence impurity system and phonon drag on the thermoelectric constants in two-dimensional systems

The temperature behavior of the longitudinal Nernst-Ettingshausen coefficient in 2D systems is studied theoretically taking account of phonon drag and Coulomb correlations in a system of mixed-valence impurities at low temperatures. It is shown that the effect changes sign at the transition from entrainment to scattering by a correlated system of impurity centers. A sign change does not occur in the case of scattering by randomly distributed impurity centers. This temperature behavior of the Nernst-Ettingshausen coefficient is due to the radical rearrangement of the impurity system as a result of strong Coulomb correlations present in a system of impurities with mixed valence. As a result, the character of the scattering of charge carriers by the correlated system of charge centers changes substantially. Fiz. Tverd. Tela (St. Petersburg) 40, 553–556 (March 1998)     

Transmission spectra of epitaxial layers of Pb1 ? xEuxTe (0 ≤ x ≤ 0.37) solid solutions in the frequency range 7–4000 cm?1

The spectra of epitaxial Pb_{1 − x} Eu _x Te (0 ≤ x ≤ 0.37) solid solution layers grown on BaF₂ and Si substrates have been investigated over a wide frequency range 7–4000 cm⁻¹ at temperatures of 5–300 K. Apart from the phonon and impurity absorption lines, the absorption in a local mode in PbEuTe layers of substrates and buffer layers has been observed in the frequency range 110–114 cm⁻¹. As the temperature decreases from 300 to 5 K, the transverse phonon mode softens from 33.0 to 19.5 cm⁻¹.     

Specific heat of Ce x La1 − x B6 in the low cerium concentration limit (x ≤ 0.03)

The specific heat of high-quality Ce _x La_{1 ? x} B₆ (x = 0, 0.01, 0.03) single crystals is studied in the temperature range 0.4–300 K. LaB₆ samples with various boron isotope compositions (¹⁰B, ¹¹B, ^nat B) are analyzed to estimate the effect of boron vacancies. The experimental data are used to take into account the electron component correctly under the renormalization of the density of states at T < 8 K, the contribution of the quasi-local vibrational mode of a rare-earth ion with the Einstein temperature Θ_E ≈ 152 K, the Debye contribution from the rigid cage of boron atoms with the Debye temperature Θ_D ≈ 1160 K, and the low-temperature Schottky contribution related to the presence of 1.5?2.3% boron vacancies in the rare-earth hexaborides. The detected low-temperature anomalies in the specific heat are shown to be interpreted in terms of the formation of two-level systems with an energy ΔE = 92–98 K caused by the displacement of rare-earth ions from their centrosymmetric positions. A scenario of heavy fermion formation that is alternative to the Kondo mechanism is proposed for the systems with a magnetic impurity.     

Temperature and electric field dependences of the mobility of electrons in vertical transport in GaAs/Ga<Subscript>1−<Emphasis Type="Italic">y</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">y</Emphasis></Subscript>As barrier structures containing quantum wells

The mobility of electrons in vertical transport in GaAs/Ga_1−y Al _y As barrier structures was investigated using geometric magnetoresistance measurements in the dark. The samples studied had Ga_1−y Al _y As (0 ≤ y ≤ 0:26) linearly graded barriers between the n⁺-GaAs contacts and the Ga_0:74Al_0:26As central barrier, which contain N _w (=0, 2, 4, 7 and 10) n-doped GaAs quantum wells. The mobility was determined as functions of (i) temperature (80–290 K) at low applied voltage (0.01–0.1 V) and (ii) applied voltage (0.005–1.6 V) at selected temperatures in the range 3.5–290 K. The experimental results for the temperature dependence of low-field mobility suggest that space-charge scattering is dominant in the samples with N _w =0 and 2, whereas ionized impurity scattering is dominant in the samples with N _w =4, 7 and 10. The effect of polar optical phonon scattering on the mobility becomes significant in all barrier structures at temperatures above about 200 K. The difference between the measured mobility and the calculated total mobility in the samples with N _w =4, 7 and 10, observed above 200 K, is attributed to the reflection of electrons from well-barrier interfaces in the quantum wells and interface roughness scattering. The rapid decrease of mobility with applied voltage at high voltages is explained by intervalley scattering of hot electrons.      

Superconductivity, Seebeck coefficient, and band structure transformation in Y1−x CaxBa2Cu3−x CoxOy (x=0–0.3)

The temperature dependences of the resistivity and of the Seebeck coefficient S is studied in three series of Y_1−x Ca_xBa₂Cu_3−x Co_xO_y samples (x=0–0.3) differing in oxygen content. It was found that the critical temperature decreases for y≈7.0, and S(T=300 K) increases with doping, whereas oxygen deficiency results in a nonmonotonic variation of these quantities with increasing x. The band structure parameters have been determined from an analysis of the S(T) relations using a phenomenological theory of electron transport. It was found that an increase in x results in a gradual increase in band asymmetry, which is caused by calcium-induced creation of additional states in the band responsible for conduction in the normal phase. An analysis has shown that high impurity concentrations in oxygen-deficient Y_1−x Ca_xBa₂Cu_3−x Co_xO_y samples bring about an additional ordering of the structure, which may be caused by formation of a cobalt superlattice. It has also been shown that, in the case of Ca and Co codoping, the dependence of critical temperature on effective conduction-band width coincides with the universal correlation relation observed in the YBa₂Cu₃O_y system with single substitutions in various lattice sites. Fiz. Tverd. Tela (St. Petersburg) 41, 1363–1371 (August 1999)     

Effect of hydrostatic compression on the indium-impurity-induced superconducting transition in Pb<Subscript>0.3</Subscript>Sn<Subscript>0.7</Subscript>Te

This paper reports on a study of the low-temperature conductivity and parameters of the superconducting state, namely, the critical temperature T _c and the second critical magnetic field H_c2, in the (Pb_0.3Sn_0.7)_0.95In_0.05Te solid solution under hydrostatic pressure P ≤ 9 kbar at T = 4.2 K. The choice of this material has been motivated by the fact that, according to earlier observations, it undergoes a superconducting transition at T _c ∼ 2.3 K, i.e., close to the maximum value T _c ∼ 2.9 K found for the (Pb _z Sn_{1 − z} )_0.95In_0.05Te solid solutions with a lead content z ∼ 0.15–0.25. It has been demonstrated that an increase in the pressure to P ≤ 9 kbar leads to a bell-shaped dependence T _c (P). The observed dependences are assigned to the effect of hydrostatic compression on the band structure of the solid solution and indicate a shift in the position of the Fermi level E _F with increasing pressure within the impurity band of the In quasi-local states. In this case, E _F passes through a maximum in the density of impurity states at P = 3–5 kbar.     

Effects of <Emphasis Type="Italic">d</Emphasis>-wave pairing in <Emphasis Type="Italic">n</Emphasis>-type high-temperature superconductors with anisotropic impurity scattering

The temperature dependences of the resistivity of single-crystal films of the Nd_{2 − x} Ce _x CuO_{4 + δ} n-type superconductors with x = 0.14 (underdoped region) and x = 0.15 (optimal doping region) and different degrees of disorder δ have been investigated in various magnetic fields (B ‖ c, J ‖ ab) in the temperature range 0.4–300 K. It has been demonstrated that there are differences in the behavior of the dependences of the slope of the upper critical field $ (dB_{c2} /dT)_{T \to T_c } $ (dB_{c2} /dT)_{T \to T_c } on the disorder parameter for the underdoped samples (x = 0.14) and the samples with the optimal doping (x = 0.15). The study of the dependence of the slope of the upper critical field on the degree of disorder has made it possible to discriminate experimentally between the superconductors with the d pairing and anisotropic s pairing. It has been revealed that the relative stability of the n-type superconductor with the optimal doping with respect to disordering is possibly due to the strong anisotropy of impurity scattering with symmetry of the d type.     

Charge ordering in crystals of Pr1? x Sr x MnO3 ( x = 0.22, 0.24) ferromagnetic manganites

The structural and magnetic states of Pr_1−x Sr _x MnO₃ (x = 0.22, 0.24) manganite crystals were studied over a wide temperature range. Measurements of the magnetic susceptibility and electrical resistivity demonstrated that these manganites belong to the class of ferromagnetic semiconductors. Thermal neutron elastic scattering patterns revealed that, in the temperature range 4.2–350 K, the manganites have an orthorhombic structure (space group Pnma) with a well-pronounced cooperative Jahn-Teller effect. Major emphasis was placed on the nuclear magnetic superstructure with a wave vector q = (2π/2a, 0, 2π/2c). It was shown that this superstructure suggests 1/4-type charge ordering in the manganites under investigation. Original Russian Text ? S.F. Dubinin, S.G. Teploukhov, V.E. Arkhipov, V.D. Parkhomenko, é.A. Neĭfel’d, A.V. Korolev, N.A. Ugryumova, Ya.M. Mukovskiĭ, 2007, published in Fizika Tverdogo Tela, 2007, Vol. 49, No. 4, pp. 704–710.     

Effect of the nonstoichiometric disorder on the temperature dependence of the upper critical field in Nd2? x Ce x CuO4+δ electron superconductors

The temperature dependences of the resistance of the Nd_2−x Ce _x CuO_4+δ single crystal with x = 0.15 and various disorder parameters δ have been investigated in various magnetic fields (B ‖ c, J ‖ ab) in the temperature range T = 1.8–40 K. It has been shown that the slope of the upper critical field, (dB _c2/dT)|T _c, in the electron superconductor decreases with an increase in the disorder parameter. This dependence makes it possible to experimentally distinguish between d-pairing superconductors and s-pairing superconductors. The dependence of the superconducting transition temperature on the disorder parameter in the system is investigated in the model of the superconductors with anisotropic impurity scattering. Original Russian Text ? T.B. Charikova, N.G. Shelushinina, G.I. Kharus, A.A. Ivanov, 2008, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2008, Vol. 88, No. 2, pp. 132–136.     

Phonon spectroscopy of submicron ceramic materials based on Ce1–xGdxO2–y solid solutions

The specific features of the kinetic characteristics of subterahertz phonons in ceramic samples based on Ce_1–x Gd _x O_2–y electrolyte solid solutions have been investigated in the range of liquid-helium temperatures. It has been demonstrated that the observed anomalies of the transport characteristics of thermal phonons in this system are caused by the formation of structural defects associated with the position of vacancies in the anion sublattice with respect to impurity cations. The activation energy of the two-level system Δ = 8.53 K has been determined from an analysis of the experimental results.     

Manganese energy level in <Emphasis Type="Italic">p</Emphasis>-InAs〈Mn〉 under pressure

Resistivity ρ and the Hall coefficient R _H at atmospheric pressure in the temperature range of 77–400 K and the dependences of these parameters (ρ(P) and R _H(P)) and magnetic susceptibility (χ(P)) on hydrostatic pressures of up to P ≤ 7 GPa at 300 K in p-InAs〈Mn〉 single crystals was investigated. The baric coefficients of the ionization energy of Mn impurity centers and the pressure dependence of the dielectric constant ɛ(P) were determined.     

Transverse Nernst-Ettingshausen effect in HgSe:Fe,Ga crystals containing mixed-valence iron impurities

The transverse Nernst-Ettingshausen effect is investigated experimentally and theoretically for HgSe:Fe,Ga samples with various iron and gallium impurity contents. It is shown that the unusual dependence of the magnitude and sign of the effect on the gallium impurity content are attributable to their influence on the degree of spatial ordering of the trivalent iron ions and, accordingly, on the nature of the scattering of conduction electrons. The results of the calculations agree qualitatively with the experimental data. Fiz. Tverd. Tela (St. Petersburg) 39, 1767–1774 (October 1997)     

Magnetoresistance of HgSeS crystals at hydrostatic pressures of up to 1 GPa

Magnetoresistance (MR) of HgSe_1−x S_x crystals has been studied in the temperature range 4.2–300 K and in magnetic fields up to 12 T under hydrostatic pressures P exceeding the threshold P _t for the structural phase transition. Shubnikov-de Haas quantum oscillations in longitudinal and transverse MR were observed to occur in the original samples at T=4.2 K. For P>P _t, HgSeS crystals transferred to metastable states, which presumably incorporate the high-and low-pressure phases, and in which the oscillations vanished. At the same time the monotonic behavior of MR with magnetic field B, as well as the temperature dependences of resistivity ρ retained the shape characteristic of the original phases. The observed weakening of the dependences of ρ on B and T is attributed to an increase of the temperature independent contribution to ρ caused by phase inclusions and structural defects in the metastable states. It is the corresponding decrease of electron mobility that suppresses the oscillations. Fiz. Tverd. Tela (St. Petersburg) 39, 1717–1722 (October 1997)     

Electrical conductivity and magnetic properties of La1 ? xCaxMn1 ? yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)

The temperature dependences of the magnetic susceptibility χ(T) and the electrical resistivity ρ(T) of ceramic samples of La_{1 − x} Ca _x MnO₃ with x = 0.67 (LCMO) and La_{1 − x} Ca _x Mn_{1 − y} Fe _y O₃ with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10⁵ G and the temperature range T = 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures T _CO ≈ 272 K for LCMO and T _CO ≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers p _eff = 4.83 μ_B (LCMO) and 4.77 μ_B (LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for T < T _CO is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers a for LCMFO and a _und for LCMO is a/a _und = 0.88. Original Russian Text ? V.S. Zakhvalinskiĭ, R. Laiho, T.S. Orlova, A.V. Khokhulin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 61–68.