使康普顿探测器灵敏度能量响应相对平坦的一种方法

介质型标准康普顿探测器对1．5MeVγ的灵敏度约为0．5Mevγ辐射对应灵敏度的1．7倍，在0．5～5MeV对应能区内，能量灵敏度相对该能区的平均灵敏度的最大差异近40％，也就是说在该能量区内介质型标准康普顿探测器的灵敏度变化较大，能量响应不太平坦，如果用于近距离测量具有能谱结构的高强度γ辐射，就比较难获得不确定度小的绝对强度结果。本工作研究了康普顿探测器各构成部分的材料和尺寸对探测器输出的贡献，各种γ辐射能量下探测器的灵敏度，设计加工了灵敏度可调的康普顿探测器，在强钴源放射性源场中验证了部分研究结果。     

康普顿探测器优化设计

康普顿探测器可以获得脉冲X射线照射量随时间变化的波形,探测器特性主要由收集体、介质和金属外壳的材料、尺寸决定。针对神龙一号加速器产生的X射线的能谱结构,应用蒙特卡罗模拟方法,进行探测器结构尺寸设计,获得最佳的有机玻璃介质厚度为30 mm。探测器灵敏度系数随X光能量变化的曲线表明其能量响应较差,分析与计算结果表明在收集体前加低Z金属可有效改善能量响应特性并提高灵敏度系数。计算得到用于测量神龙一号加速器的X射线照射量的康普顿探测器的灵敏度系数为6.86×1011(C/kg)-1。     

用于脉冲n/γ混合场γ强度测量的ICI探测器

研制成功一种基于康普顿效应, 用于脉冲裂变n/γ混合场γ强度绝对测量的新型辐射探测器—ICI(绝缘体－导体－绝缘体)探测器. 除具有现有真空康普顿和介质康普顿探测器时间响应快、线性电流大、抗辐射干扰能力强等优点外,该探测器从结构上抑制了真空康普顿在快脉冲γ测量中的前后负冲信号, 并且工作时不需要高真空, 而γ灵敏度却与同尺寸介质康普顿探测器相当. 由于其探测灵敏介质厚度小于2mm, 因而在群脉冲辐射探测中, 不会显著影响后续和周围探测器的 测量环境, 是一种探测脉冲γ射线较理想的探测器.     

CsI光阴极在10-100 keV X射线能区的响应灵敏度计算

为了满足10-100 keV高能X射线光电探测器研究的需要,对CsI光阴极在该能量范围的响应灵敏度进行了研究.基于高能量X射线光子与材料相互作用的物理过程,分析了康普顿散射等效应对CsI响应灵敏度的影响.推导了CsI的响应灵敏度与二次电子平均逃逸深度和光阴极厚度的关系式和二次电子平均逃逸深度与入射光子能量的关系式,计算了CsI在10-100 keV范围内的响应灵敏度,计算结果与实验测试数据相符,验证了分析与推导的可靠性.根据计算可以获得不同入射X射线能量下CsI光阴极的最佳厚度,从而为高能X射线光电探测器的设计优化提供了理论参考.     

4He闪烁裂变中子探测器的中子灵敏度

对4He闪烁裂变中子探测器的中子灵敏度进行了理论和实验研究。采用蒙特卡罗方法模拟了不同能量中子和不同厚度裂变靶产生的裂变碎片在4He中的能量沉积,计算结果表明:中子在4He气中的能量沉积曲线和裂变碎片的能量沉积曲线能够互补,从而使探测器对中子的能量响应变得更平坦;探测器的中子灵敏度为10-15 Ccm2量级。并对探测器的中子灵敏度进行了实验标定,实验结果与理论计算结果较为一致。     

用于强γ环境中测量中子参数的薄膜塑料闪烁探测器

提出了在强γ环境中脉冲中子通量的薄膜闪烁体测量方法.根据其与中子、γ响应的理论计算结果,研制成功一种对γ不灵敏,用于探测快脉冲中子通量的新型探测器.该探测器由塑料薄膜闪烁体+光电探测器构成.与传统探测器相比,该探测器具有如下特点1.高中子灵敏度;2.高n/γ分辨;3.在给定能区具有平坦的能量响应.     

一种基于~4He气闪烁体的裂变中子探测器

研制了一种新中子探测器,它以²³⁵UO₂裂变靶作为转换靶,⁴He气体作为闪烁体.该探测器充分结合了²³⁵U和⁴He两种核素的特点,从而具有中子能量响应平坦、中子灵敏度较高、n/γ分辨本领高等优点,能很好地在混合脉冲裂变辐射场中测量中子.本文对探测器的原理和结构设计进行了介绍,计算了不同能量中子、γ射线在探测器中的能量沉积,并从理论和实验上对探测器的中子灵敏度、γ射线灵敏度、n/γ分辨本领和时间响应进行了研究.结果表明探测器的中子灵敏度约10^-15C·cm²,γ灵敏度约10^-17C·cm²,时间响应约33.1 ns.     

组合式Si-PIN 14 MeV中子探测器

提出了一种在多片Si-PIN探测器中间用2mm厚的聚乙烯作为灵敏度增强介质,采用加法电路模式进行信号输出的组合式新型DT聚变中子(14MeV)探测技术原理. 这种组合的主要特点有： 1)大幅度提高了Si-PIN探测器的中子灵敏度和测量统计性; 2)提高了探测器的n/γ分辨本领; 3)在实现多个探测器信号相加的同时,组合探测器相对于单片探测器时间响应没有明显改变. 从实验及理论上对组合探测器的14MeV中子及1.25MeV γ灵敏度、n/γ分辨,时间特性和测量统计性进行了研究. 关键词： Si-PIN半导体探测器 灵敏度 n/γ分辨 时间响应     

ST-401薄塑料闪烁体中子能量响应测量技术研究

利用中国原子能科学研究院核工业放射性计量测试中心的5SDH-2串列加速器进行了ST-401薄塑料闪烁体的能量响应实验.选用T(p,n)³He反应和D(d,n)³He反应作为中子源，子源，中子束流采用复合屏蔽体进行准直，源强采用正比计数管和半导体望远镜进行监测，实验测量了厚度从0.16mm到2.00mm的八种规格薄闪烁体的能量响应曲线，对实验的结果的不确定度进行了分析.结果表明探测器的灵敏度随着晶体厚度的增加而增加，对于一定厚度的薄闪烁体，随着中子能量的增加，探测器的能量响应曲线坡度不大. 关键词： 塑料闪烁体 能量响应 正比计数器 半导体反冲质子望远镜     

阵列式康普顿相机GEANT4模拟与图像重建及优化

出于对放射性核素各种应用和安全的考虑,需要性能良好的康普顿相机。通过蒙特卡罗方法模拟了双层阵列式康普顿相机,散射探测器材料为Si,吸收探测器材料为CZT（碲锌镉）。利用反投影图像重建算法进行了图像重建,采用极大似然法对重建结果进行优化,有效地提高了重建图像的分辨率。当放射源与探测器距离100 mm时,经过10次极大似然法迭代计算,位置分辨率与角分辨率分别达到5.1 mm与7.3。检验了极大似然法对于康普顿相机放射源图像重建的优化作用。     

Design and gamma sensitivity measurement of a novel dual-emitter vacuum Compton detector

A novel dual-emitter vacuum Compton detector (D-VCD) with higher gamma ray detecting efficiency is proposed. The emitters are made of Ta--Al clad metal. The gamma ray sensitivity is studied by Monte Carlo simulation using the MCNP code. A comparison between calculations and results measured by using the 1.25~MeV gamma ray of Co-60 is also performed. Experimental sensitivities for two sample D-VCDs with the same materials and structures are 1.92×10^ - 20 and 2.02×10^ - 20~C.cm²/MeV separately, which are consistent with the simulation result of 1.98×10^ - 20~C.cm²/MeV and are 4 times higher than that of VCD with a single Fe emitter. According to the simulation results, in a gamma energy range from 0.5 to 3~MeV, the maximum sensitivity variance for the D-VCD is less than 15%, and less than 5% in a range from 1 to 2~MeV in particular. The novel D-VCD is applicable to the detection of intense pulse gamma rays.     

氧化槐果碱结构的测定及其振动圆二色谱研究

采用傅里叶红外光谱仪(FTIR)和振动圆二色谱仪(VCD)测量氧化槐果碱固体的红外光谱和振动圆二色谱。采用密度泛函方法(DFT)分别在B3LYP/cc-PVTZ和B3LYP/6-311+G(d, p)水平下,对气相中氧化槐果碱分子结构进行了优化,然后在相同水平下计算了氧化槐果碱的红外光谱(IR)以及振动圆二色谱(VCD)。将实验谱图与理论计算谱图进行对照,以确定氧化槐果碱的实际构象以及构象分布。由对比结果可知：采用B3LYP/6-311+G(d,p)水平下,以吉布斯自由能进行玻尔兹曼加权平均后的理论IR和VCD谱图与实际光谱图最为接近,说明在常温下氧化槐果碱具有A/B-trans C/D-trans和A/B-trans C/D-cis两种优势构象,且玻尔兹曼分布显示两种构象均以一定比例共存,且通过对氧化槐果碱的两种优势构象分析,发现A/B环的立体结构为：椅式-椅式,C/D环的立体结构为：椅式-沙发式。     

双极型晶体管损坏与强电磁脉冲注入位置的关系

 利用时域有限差分法，对双极型晶体管(BJT)在强电磁脉冲作用下的瞬态响应进行了2维数值模拟，研究了电磁脉冲从不同极板注入时BJT的响应情况，根据温度分布的集中程度分析了发生烧毁的难易程度。模拟得出：发射极注入最容易导致烧毁，集电极注入次之，基极注入相对不易导致烧毁；发射极注入烧毁所消耗能量随着脉冲电压上升而下降，到30 V以后基本与电压的升高无关，集电极注入烧毁所消耗的能量则随着电压上升而上升，到100 V以后由于BE结上热点的出现而开始下降。     

Graphene with the secondary amine-terminated zigzag edge as a line electron emitter

An extraordinary low vacuum barrier height of 2.30?eV has been found on the zigzag-edge of graphene terminated with the secondary amine via the ab?initio calculation. This edge structure has a flat band of edge states attached to the gamma point where the transversal kinetic energy is vanishing. We show that the field electron emission is dominated by the flat band. The edge states pin the Fermi level to a constant, leading to an extremely narrow emission energy width. The graphene with such edge is a promising line field electron emitter that can produce a highly coherent emission current.     

双极型晶体管在强电磁脉冲作用下的瞬态响应

 利用时域有限差分法,对双极型晶体管在强电磁脉冲作用下的瞬态响应进行了2维数值模拟,分析了器件烧毁过程中电场、电流密度、温度等参数的分布及变化情况,分别观察了低电压和高电压脉冲作用下烧毁过程中热点的形成过程,并得到了器件烧毁所需时间以及能量与脉冲电压幅度之间的关系。在电压脉冲较低时,烧毁点位于通道中靠近集电极的位置,当脉冲电压达到一定幅度的时候,由于发射极与集电极之间发生雪崩击穿,基极和发射极之间电势会抬高,从而引起基极和发射极之间的击穿,形成新的热点,并在电压幅度约高于100 V的情况下会率先达到烧毁温度。随着脉冲电压幅度的增高,晶体管烧毁所需时间呈负指数减少,而所需能量在55~100 V之间接近于线性增长,直到电压幅度约高于100 V时才开始减少。     

Two-photon scattering by a driven three-level emitter in a one-dimensional waveguide and electromagnetically induced transparency

We study correlated two-photon transport in a (quasi-)one-dimensional photonic waveguide coupled to a three-level Λ-type emitter driven by a classical light field. Two-photon correlation is much stronger in the waveguide for a driven three-level emitter (3LE) than a two-level emitter. The driven 3LE waveguide shows electromagnetically induced transparency (EIT), and we investigate the scaling of EIT for one and two photons. We show that the two transmitted photons are bunched together at any distance separation when energy of the incident photons meets "two-photon resonance" criterion for EIT.     

5,6,11,12-四苯基四苯并掺杂8-羟基喹啉铝薄膜的荧光谱及发光机理

用高荧光染料的5，6，11，12－四苯基四苯并对8－羟基喹啉铝进行掺杂，测量其光致发光和电致发光谱。结果表明：在低掺杂时，主发光体是Alq，掺入的Rubrene作为客发光体只是在Alq带隙中引入了分立能级；随着掺入的Rubrene浓度增加，Rubrene成了主发光体，Alq变成了客发光体，出现了发光体的互换现象。由于Rubrene的吸收光谱与Alq的发射谱重叠较大，在光致发光中存在从Alq向Rubrene的能量传递和电荷转移过程，而电致发光则是由于Rubrene导带中电子浓度远大于注入到Alq导带中电子浓度，造成Rubrene导带电子与价带空穴复合的几率比Alq中的复合几率大得多，其EL主要是Rubrene的发光。     

96gTc As an Alternative Gamma-Ray Emitter for Medical Diagnostics

The possibility of employing the isotope ^96gTc as a gamma-ray emitter in medical diagnostics is examined. Corresponding calculations by the TALYS-1.9 revealed that an irradiation of a ⁹⁶Mo target with protons of energy E =12 → 6 MeV at a current of 100 μA for six (eight) hours makes it possible to produce 20 (26) GBq of the isotope ^96gTc. In detecting gamma rays of energy in the range between 770 and 850 keV, the intensity of gamma rays from ^96gTc is close to their intensity for ^99mTc obtained in the reaction ¹⁰⁰Mo(p, n), so that one can use^96gTc as an alternative gamma-ray emitter.

     

Experimental calculations of number,energy and dose albedos for various materials using 662 keV gamma rays

ABSTRACT

Number, energy and dose albedos are measured at a scattering angle of 180° for a broad beam of 662 keV gamma rays obtained from a radioactive source of ¹³⁷Cs (having strength in µCi; 1 Ci?=?3.7?×?10¹⁰ disintegrations per second). The gamma beam is incident on semi-infinite thick targets of variable atomic numbers. The scattering media is divided into three sets, which are pure elements, alloys and composite materials. Experiments are carried out using a 3^″?×?3^″ NaI(Tl) scintillation detector. To obtain precision in data, the response unfolding of a scintillation detector is used, which converts the observed pulse-height distribution to a true photon spectrum over the energy range of 2.5 to 640 keV. The detector response unfolding results in the true intensity of back-scattered gamma flux by shifting the events resulting from partial absorption of photons to the full energy peak of the spectrum. In the present study, albedo factors are studied as a function of target thickness and their atomic number. The experimentally calculated numbers of back-scattered gamma photon are in good agreement with theoretically generated numbers of multiple back-scattered counts by using a Monte Carlo simulation code. The experimental data on energy and intensity of 662 keV gamma photons are used to evaluate the number, energy and dose albedos for different materials under investigation.     

A new vascular coupling device: Assessment of MRI issues at 3-tesla

Objective

Vascular grafting frequently involves a time-consuming operation. A new vascular coupling device (VCD) made from metallic material was recently developed that may be advantageous because of the reduced operative time and decreased patient risks. Because of the metal, there are safety concerns related to MRI. Therefore, the purpose of this investigation was to use standardized testing techniques to evaluate MRI issues for this VCD in association with a 3-Tesla MR system.

Methods

The VCD (corlife oHG, Hannover, Germany) was evaluated for magnetic field interactions (translational attraction and torque), MRI-related heating, and artifacts at 3-Tesla. MRI-related heating was assessed with the VCD in a gelled-saline-filled phantom with MRI performed at a whole body averaged SAR of 2.9-W/kg for 15-min. Artifacts were assessed using T1-weighted, spin echo, and gradient echo pulse sequences.

Results

The VCD exhibited minor magnetic field interactions and minimal heating (maximum temperature elevation, 1.8 °C). Artifacts were relatively small in relation to the size and shape of this implant. The lumen of the VCD could not be visualized using the gradient echo pulse sequence.

Conclusions

The metallic VCD that underwent evaluation is MR conditional for a patient undergoing an MRI procedure at 3-Tesla or less.