Ar环境下脉冲激光烧蚀粒子阻尼系数的空间分布

在10 Pa的Ar环境气体中,采用脉冲激光烧蚀技术,分别在半径为2.0,2.5,3.0,3.5和4.0 cm的半圆环不同角度处的衬底上制备了一系列含有纳米晶粒的Si晶薄膜。使用扫描电子显微镜、X射线衍射仪和拉曼光谱仪对其表面形貌和微观结构进行分析表征。结果表明,纳米Si晶粒的平均尺寸和烧蚀粒子的阻尼系数均相对于羽辉轴向呈对称分布,并随着与羽辉轴向夹角的增大而减小;同时,随着衬底半径的增加,晶粒平均尺寸和阻尼系数均逐渐减小。     

外加气流对脉冲激光烧蚀制备纳米Si晶粒尺寸分布的影响

提出一种控制脉冲激光烧蚀制备纳米Si晶粒尺寸分布的新方法。在10Pa的Ar环境中,采用脉冲激光烧蚀高阻抗单晶硅靶沉积制备了纳米Si晶薄膜。在羽辉正上方2.0cm,距靶0.3～3.0cm范围内的不同位置引入氩气流,在烧蚀点正下方2.0cm处水平放置单晶Si(111)衬底来收集制备的纳米Si晶粒。利用扫描电子显微镜观察样品表面形貌,并对衬底不同位置上纳米Si晶粒进行统计。结果表明:在不引入气流时,晶粒的尺寸随靶衬间距的增加先增大后减小,晶粒尺寸峰值出现在距靶1.7cm处;引入气流后,晶粒尺寸分布发生变化,在距靶1.7cm引入气流时晶粒尺寸峰值最大,在距靶3.0cm引入气流时晶粒尺寸峰值最小,且出现晶粒尺寸峰值的位置随着引入气流位置的增加而增大。     

外加气流对脉冲激光烧蚀制备纳米Si晶粒尺寸分布的影响

提出一种控制脉冲激光烧蚀制备纳米Si晶粒尺寸分布的新方法。在10 Pa的Ar环境中,采用脉冲激光烧蚀高阻抗单晶硅靶沉积制备了纳米Si晶薄膜。在羽辉正上方2.0 cm,距靶0.3～3.0 cm范围内的不同位置引入氩气流,在烧蚀点正下方2.0 cm处水平放置单晶Si（111）衬底来收集制备的纳米Si晶粒。利用扫描电子显微镜观察样品表面形貌,并对衬底不同位置上纳米Si晶粒进行统计。结果表明：在不引入气流时,晶粒的尺寸随靶衬间距的增加先增大后减小,晶粒尺寸峰值出现在距靶1.7 cm处;引入气流后,晶粒尺寸分布发生变化,在距靶1.7 cm引入气流时晶粒尺寸峰值最大,在距靶3.0 cm引入气流时晶粒尺寸峰值最小,且出现晶粒尺寸峰值的位置随着引入气流位置的增加而增大。     

Ar环境气压对脉冲激光烧蚀制备纳米Si晶粒平均尺寸的影响

采用XeCl脉冲准分子激光器,烧蚀高阻抗单晶Si靶,在1—500 Pa的Ar气环境下沉积制备了纳米Si薄膜. x射线衍射谱测量证实,纳米Si晶粒已经形成.利用扫描电子显微镜观测了所形成纳米Si薄膜的表面形貌,结果表明,随着环境气压的增加,所形成的纳米Si晶粒的平均尺寸增大,气压为100 Pa时达到最大值20 nm,而后开始减小. 从晶粒形成动力学角度,对实验结果进行了定性分析.关键词：纳米Si晶粒脉冲激光烧蚀表面形貌     

激光烧蚀冲量耦合系数解析计算模型

利用激光清除空间碎片被认为是一种可行手段,冲量耦合系数是数值计算空间碎片清除效果的重要参数。建立了激光烧蚀冲量耦合系数解析计算模型,引入电离度参数,将气化机制与等离子体机制两种机制下的冲量耦合系数解析计算模型联系起来,建立统一的耦合系数解析模型。以空间碎片常见材料Al为例,计算得到冲量耦合系数、电离度、激光功率密度三者之间的变化关系。随着激光功率密度的增加,气化机制逐渐向等离子体机制过渡,电离度增加,直至完全电离,冲量耦合系数先增加后减少,并且在等离子机制占主导情况下达到最优冲量耦合。     

激光烧蚀冲量耦合系数解析计算模型

利用激光清除空间碎片被认为是一种可行手段,冲量耦合系数是数值计算空间碎片清除效果的重要参数。建立了激光烧蚀冲量耦合系数解析计算模型,引入电离度参数,将气化机制与等离子体机制两种机制下的冲量耦合系数解析计算模型联系起来,建立统一的耦合系数解析模型。以空间碎片常见材料Al为例,计算得到冲量耦合系数、电离度、激光功率密度三者之间的变化关系。随着激光功率密度的增加,气化机制逐渐向等离子体机制过渡,电离度增加,直至完全电离,冲量耦合系数先增加后减少,并且在等离子机制占主导情况下达到最优冲量耦合。     

SiC的纳秒脉冲激光烧蚀特性

建立了纳秒脉冲激光烧蚀SiC的实验平台和激光烧蚀诱导等离子体的实验测量系统,并采用一维流体力学程序模拟了高功率激光烧蚀SiC的过程和烧蚀过程中产生等离子体射流的动力学过程,获得了纳秒激光对SiC的烧蚀规律,研究了激光烧蚀过程中产生的等离子体对烧蚀效率的影响。研究结果可为纳秒激光烧蚀材料的相关工程化应用提供参考。

     

脉冲激光烧蚀Ge产生等离子体特性的数值模拟

 针对激光烧蚀半导体材料Ge初期的特点,建立了1维的热传导和流体动力学模型。对波长为248 nm、脉宽为17 ns、峰值功率密度为4×10⁸ W/cm²的KrF脉冲激光在133.32 Pa氦气环境下烧蚀Ge产生等离子体的特性进行了数值模拟。结果表明：单个激光脉冲对靶的烧蚀深度达到55 nm,蒸气膨胀前端由于压缩背景气体产生压缩冲击波, 波前的速度最大,温度很高。从不同时刻的电离率分布图中得出,在靶面附近区域,Ge的1阶电离始终占优势;在中心区域,脉冲作用时间内,Ge的2阶电离率比1阶电离率大,脉冲结束后,Ge的2阶电离率下降,1阶电离率逐渐变大。     

脉冲激光烧蚀Ge产生等离子体特性的数值模拟

针对激光烧蚀半导体材料Ge初期的特点,建立了1维的热传导和流体动力学模型。对波长为248 nm、脉宽为17 ns、峰值功率密度为4×108 W/cm2的KrF脉冲激光在133.32 Pa氦气环境下烧蚀Ge产生等离子体的特性进行了数值模拟。结果表明：单个激光脉冲对靶的烧蚀深度达到55 nm,蒸气膨胀前端由于压缩背景气体产生压缩冲击波, 波前的速度最大,温度很高。从不同时刻的电离率分布图中得出,在靶面附近区域,Ge的1阶电离始终占优势;在中心区域,脉冲作用时间内,Ge的2阶电离率比1阶电离率大,脉冲结束后,Ge的2阶电离率下降,1阶电离率逐渐变大。     

脉冲激光烧蚀推进技术的航天应用进展

脉冲激光烧蚀推进技术具有比冲高和推力可精确控制的特点,既可用于发射有效载荷也可用于星载动力,甚至可用小行星表面物质作为推进剂使其偏转轨道,因此,在航天领域得到越来越多关注。围绕激光单级入轨发射、同步轨道和火星轨道运输;激光微推力器用于航天器姿轨控,以及激光与电组合推进;激光烧蚀操控cm级空间碎片的轨道,以及激光烧蚀操控较大尺寸碎片的姿态;激光烧蚀偏转小行星轨道等方面,对脉冲激光烧蚀推进技术在航天领域研究现状和进展,进行了系统全面地归纳和总结,并对激光平均功率、波长、脉宽和推进剂选材等关键问题,进行了详细分析。     

Nanoparticle Formation by Laser Ablation

The properties of nanoparticle aerosols of size ranging from 4.9nm to 13nm, generated by laser ablation of solid surfaces are described. The experimental system consisted of a pulsed excimer laser, which irradiated a rotating target mounted in a cylindrical chamber 4cm in diameter and 18-cm long. Aerosols of oxides of aluminum, titanium, iron, niobium, tungsten and silicon were generated in an oxygen carrier gas as a result of a reactive laser ablation process. Gold and carbon aerosols were generated in nitrogen by non-reactive laser ablation. The aerosols were produced in the form of aggregates of primary particles in the nanometer size range. The aggregates were characterized using a differential mobility analyzer and electron microscopy. Aggregate mass and number concentration, electrical mobility size distribution, primary particle size distribution and fractal dimension were measured. System operating parameters including laser power (100mJ/pulse) and frequency (2Hz), and carrier gas flow rate (1l/min) were held constant.A striking result was the similarity in the properties of the aerosols. Primary particle size ranged between 4.9 and 13nm for the eight substances studied. The previous studies with flame reactors produced a wider spread in primary particle size, but the order of increasing primary particle size follows the same trend. While the solid-state diffusion coefficient probably influences the size of the aerosol in flame reactors, its effect is reduced for aerosols generated by laser ablation. It is hypothesized that the reduced effect can be explained by the collision-coalescence mechanism and the very fast quenching of the laser generated aerosol.     

低压下气流对激光沉积纳米硅晶化及尺寸的影响

纳米硅具有明显的光致发光效应和量子尺寸效应,广泛的应用在现代电子工业和太阳能光伏工业中.尺寸影响着纳米硅的实际用途,因此制备尺寸可控的纳米硅晶粒具有很重要的实际意义.本文采用脉冲激光沉积(PLD)技术,在烧蚀点水平方向、距靶2 cm处引入一束流量为5 sccm的氩(Ar)气流,在0.01-0.5 Pa的Ar气压下烧蚀高阻抗单晶硅(Si)靶.在管口正下方1 cm处水平放置衬底来沉积纳米Si薄膜;并用同一装置,在0.08 Pa的Ar气压下分别引入流量为0,2.5,5,7.5,10 sccm的Ar气流沉积纳米Si薄膜.利用原子力显微镜(AFM)、X射线衍射(XRD)、Raman散射对样品表面形貌和微观结构进行分析表征.结果表明:不引入气流时出现纳米Si晶粒的阈值气压是0.1Pa,引入气流后出现纳米Si晶粒的阈值气压为0.05 Pa.晶粒尺寸随着气流流量的增大而减小.     

A simple model for high fluence ultra-short pulsed laser metal ablation

The ultra-short laser metal ablation is a very complex process, the complete simulation of which requires applications of complicated hydrodynamics or molecular dynamics models, which, however, are often time-consuming and difficult to apply. For many practical applications, where the laser ablation depth is the main concern, a simplified model that is easy to apply but at the same time can also provide reasonably accurate predictions of ablation depth is very desirable. Such a model has been developed and presented in this paper, which has been found to be applicable for laser pulse duration up to 10 ps based on comparisons of model predictions with experimental measurements.     

Silicon micro-hemispheres with periodic nanoscale rings produced by the laser ablation of single crystalline silicon

We describe the fabrication of silicon micro-hemispheres by adopting the conventional laser ablation of single crystalline silicon in the vacuum condition without using any catalysts or additives. The highly oriented structures of silicon micro-hemispheres exhibit many periodic nanoscale rings along their outer surfaces. We consider that the self-organized growth of silicon micro-structures is highly dependent on the laser intensity and background air medium. The difference between these surface modifications is attributed to the amount of laser energy deposited in the silicon material and the consequent cooling velocity.     

Bimodal Nanoparticle Size Distributions Produced by Laser Ablation of Microparticles in Aerosols

Silver nanoparticles were produced by laser ablation of a continuously flowing aerosol of microparticles in nitrogen at varying laser fluences. Transmission electron micrographs were analyzed to determine the effect of laser fluence on the nanoparticle size distribution. These distributions exhibited bimodality with a large number of particles in a mode at small sizes (3–6-nm) and a second, less populated mode at larger sizes (11–16-nm). Both modes shifted to larger sizes with increasing laser fluence, with the small size mode shifting by 35% and the larger size mode by 25% over a fluence range of 0.3–4.2-J/cm². Size histograms for each mode were found to be well represented by log-normal distributions. The distribution of mass displayed a striking shift from the large to the small size mode with increasing laser fluence. These results are discussed in terms of a model of nanoparticle formation from two distinct laser–solid interactions. Initially, laser vaporization of material from the surface leads to condensation of nanoparticles in the ambient gas. Material evaporation occurs until the plasma breakdown threshold of the microparticles is reached, generating a shock wave that propagates through the remaining material. Rapid condensation of the vapor in the low-pressure region occurs behind the traveling shock wave. Measurement of particle size distributions versus gas pressure in the ablation region, as well as, versus microparticle feedstock size confirmed the assignment of the larger size mode to surface-vaporization and the smaller size mode to shock-formed nanoparticles.