Preparation and electrochemical properties of Li<Subscript>4</Subscript>Ti<Subscript>5</Subscript>O<Subscript>12</Subscript>/Ti<Subscript>4</Subscript>O<Subscript>7</Subscript> composite for lithium-ion batteries

In order to improve the rate capability of Li₄Ti₅O₁₂, Ti₄O₇ powder was successfully fabricated by improved hydrogen reduction method, then a dual-phase composite Li₄Ti₅O₁₂/Ti₄O₇ has been synthesized as anode material for lithium-ion batteries. It is found that the Li₄Ti₅O₁₂/Ti₄O₇ composite shows higher reversible capacity and better rate capability compared to Li₄Ti₅O₁₂. According to the charge-discharge tests, the Li₄Ti₅O₁₂/Ti₄O₇ composite exhibits excellent rate capability of 172.3 mAh g^?1 at 0.2 C, which is close to the theoretical value of the spinel Li₄Ti₅O₁₂. More impressively, the reversible capacity of Li₄Ti₅O₁₂/Ti₄O₇ composite is 103.1 mAh g^?1 at the current density of 20 C after 100th cycles, and it maintains 84.8% of the initial discharge capacity, whereas that of the bare spinel Li₄Ti₅O₁₂ is only 22.3 mAh g^?1 with a capacity retention of 31.1%. The results indicate that Li₄Ti₅O₁₂/Ti₄O₇ composite could be a promising anode material with relative high capacity and good rate capability for lithium-ion batteries.     

First-principle study of the electronic structure and magnetism in RuSr<Subscript>2</Subscript>GdCu<Subscript>2</Subscript>O<Subscript>8</Subscript> under pressure

We have performed a first-principle calculation of the structural, electronic and high pressure properties of RuSr₂GdCu₂O₈, a ferromagnetic superconductor, by employing a full-potential linearized augmented plane-wave method within the density-functional theory. The effect of pressure was achieved by varying the volume of the unit cell with constant a:b:c ratio. The experimentally observed anti-phase rotation of RuO₆ octahedra has been attributed to the residual forces on O_Ru which results in shear strain in the RuO₂ layer. Partial charge analysis shows that applying pressure up to 6 GPa leads to hole creation in the CuO₂ sheets which causes increase in the superconducting transition temperature. We have estimated the Curie temperature T _M of this compound in the mean-field approximation using Heisenberg model with first-nearest neighbor exchange interactions determined from DFT calculations for parallel and anti-parallel spin configurations of Ru moment in RuO₂ planes. The effect of pressure causes the magnetic moment of Ru atoms to decrease due to the increase of hybridization between the adjacent Ru atoms. The calculated exchange splitting in Cu d _{x 2 - y 2} states increases slightly with pressure but it is still very small that it does not affect superconductivity, and the hole doping mechanism is dominant.     

Thermal conductivity of Na<Subscript>2</Subscript>W<Subscript>2</Subscript>O<Subscript>7</Subscript> crystal

The thermal conductivity of Na₂W₂O₇ single crystal has been studied along the main crystallographic directions at temperatures of 50–573 K. A low thermal conductivity is found to correlate with a significant difference in the cation weight.     

Computer calculations for thermal behavior of Na<Subscript>2</Subscript>CO<Subscript>3</Subscript>-Li<Subscript>2</Subscript>CO<Subscript>3</Subscript> melt

The thermal behavior of Na₂CO₃+Li₂CO₃ melt is studied by the method of thermodynamic simulation. The equilibrium compositions of the gas and salt phases are calculated at different temperatures in the initial argon atmosphere. Basic trends of the variation in the compositions of the melts and the gas phase above the melts in the presence of carbon are determined. The obtained results characterizing the stability of carbonate components in the melt are analyzed.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Tuning electronic properties of In<Subscript>2</Subscript>O<Subscript>3</Subscript> nanowires by doping control

We present two effective routes to tune the electronic properties of single-crystalline In₂O₃ nanowires by controlling the doping. The first method involves using different O₂ concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O₂ concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In₂O₃, SnO₂, and ZnO nanowires for various applications. PACS 85.35.-p     

First-principle study on the electronic structure of stressed CrSi<Subscript>2</Subscript>

The electronic structure of stressed CrSi₂ was calculated using the first-principle methods based on plane-wave pseudo-potential theory. The calculated results showed that, under the uniaxial compression, the energy level of CrSi₂ shifted toward high energy and its energy gap became wider with the increasing uniaxial stress, while the gap became narrower under the negative uniaxial stress. When the negative uniaxial stress was up to −18.5 GPa, CrSi₂ was converted into a direct-gap semiconductor with the band gap of 0.32 eV. Supported by the National Natural Science Foundation of China (Grant No. 60566001), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Program for the Excellent Young Talents of Guizhou Province (Grant No. 20050528), the Specialized Nomarch Research Fund for the Excellent Science and Technology and Education Talent’s Projects of Guizhou Province, Scientific and Technological Projects for the Returned Overseas Chinese Scholars, the Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province     

Preparation of Y<Subscript>2</Subscript>Ti<Subscript>2</Subscript>O<Subscript>7</Subscript> pyrochlore using high-energy ball milling and their structural,thermal and conducting properties

Pyrochlore-structured materials are very important materials due to their structural and conducting properties. These properties can be further modified by changing processing conditions. In the present study, pyrochlore (Y₂Ti₂O₇) is synthesized using high-energy ball milling. During various stages of ball milling, the ball-milled powder is taken for investigating the structural and thermal properties. The replacement of Ti₂O₃ by TiO₂ in nominal composition leads to lower ball milling duration to form Y₂Ti₂O₇. Differential thermal analysis showed the single exothermic peak below 800 °C, which indicates formation of disordered pyrochlore phase. The as prepared powders (40-h ball milled) were compacted and heat treated at 1,450 °C for 12 h. The conductivity of sintered sample is found to be one order higher than earlier reported pure Y₂Ti₂O₇ pyrochlore.     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

A study of the structure and properties of nanostructured ZrO<Subscript>2</Subscript>-Y<Subscript>2</Subscript>O<Subscript>3</Subscript>-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> composite powders

The correlation between temperature treatment conditions and the ratio of components in nanostructured fibrous powders with a composition of ZrO₂-Y₂O₃-Al₂O₃ and their porous crystal structure and physicochemical properties is studied. The dependences of the ratio between zirconia tetragonal and monoclynic phases on the treatment temperature and the alumina content are found to have a nonmonotonic character. The growth of zirconia crystallite size is suppressed by introduced nanocrystalline alumina in a temperature range of 600–1200°C, which is caused by the processes of ternary solid solution formation. The bulk and picnometric density values of materials are proportional to the temperature of heat treatment. The temperature dependence of the specific surface and the size of oxide grain particles has an inversely proportional character. With increasing alumina content in the powders, the specific surface increases, while the picnometric and bulk densities decrease.     

Electrical properties of Sr<Subscript>3</Subscript>Bi<Subscript>4</Subscript>Ti<Subscript>6</Subscript>O<Subscript>21</Subscript> thin films

Highly c-axis-oriented Sr₃Bi₄Ti₆O₂₁ (SBTi) thin films were fabricated on Pt-coated Si substrates by pulsed laser deposition (PLD). The structures were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). No peaks of SrTiO₃ (STO) could be detected in the XRD pattern, indicating the existence of the SBTi single phase. Good ferroelectric hysteresis loops of the films with Pt electrodes were obtained. With an applied field of 400 kV/cm, the measured remanent polarization (P_r) and coercive field (E_c) values were 4.1 C/cm² and 75 kV/cm respectively. The films showed little fatigue after 2.22×10⁹ switching cycles: the nonvolatile polarizations decreased by less than 5% of the initial values. The dielectric constant and the loss tangent of the films were measured to be 363 and 0.04 at 100 kHz. These results might be advantageous for nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random access memory (DRAM). PACS 77.84.Dy; 77.22.-d; 68.55.Jk     

First-principles calculations on the electronic structure and optical properties of BaSi<Subscript>2</Subscript>

The electronic structure, densities of states and optical properties of the stable orthorhombic BaSi₂ have been calculated using the first-principle density function theory and pseudopotential method. The results show that BaSi₂ is an indirect semiconductor with the band gap of 1.086 eV, the valence bands of BaSi₂ are mainly composed of Si 3p, 3s and Ba 5d, and the conduction bands are mainly composed of Ba 6s, 5d as well as Si 3p. The static dielectric function ɛ ₁(0) is 11.17, the reflectivity n ₀ is 3.35, and the biggest peak of the absorption coefficient is 2.15×10₅ cm⁻¹. Supported by the National Natural Science Foundation of China (Grant Nos. 60566001 and 60766002), the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20050657003), the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China (Grant No. (2005)383), the Specialized Fund of Nomarch for Excellent Talent of Science and Technology of Guizhou Province (Grant No. Z053114), the Scientific and Technological Projects for the Returned Overseas of Guizhou Province (Grant No. (2004)03), and the Top Talent’s Scientific Research Project of Organization Department of Guizhou Province (Grant No. Z053123)     

X-ray emission study of the electronic structure of nanocrystalline Al<Subscript>2</Subscript>O<Subscript>3</Subscript>

Valence states of metal ions and the phase composition of nanocrystalline Al₂O₃ (of the original oxide and the oxide irradiated by high-energy Fe⁺ ions) are studied by using x-ray emission Al L_{2, 3} and O Kα spectra. It is established that the shape of the Al L_{2, 3} spectra strongly changes as one goes from the original (bulk) Al₂O₃ to nanocrystalline oxide, while the O Kα spectra remain practically unchanged. Moreover, irradiation by high-energy Fe⁺ ions results in slight additional changes in the x-ray spectral characteristics of the aluminum oxides under study. The obtained experimental data are compared with the results of theoretical calculations of the electronic structure of α and γ phases of Al₂O₃ performed using the LDA formalism. Using the results of x-ray spectral studies, electronic structure calculations, and x-ray diffraction analysis, it is shown that the revealed spectral differences between the nanocrystalline state of aluminum oxide and the bulk material can be interpreted as a phase transition from the α phase to the γ phase of Al₂O₃ with an addition of bayerite.     

Dependence of electronic structure on the grain size in Mn<Subscript>2</Subscript>O<Subscript>3</Subscript> nanocrystals

. The dependence of electron structure on the grain size in Mn₂O₃ nanocrystals has been investigated using X-ray photoelectron spectroscopy. It is found that the electron structure is sensitively dependent on the average grain size. The experimental results indicate that the O–1s core-level spectra are hardly shifted with decreasing average grain size; however, for a sample with a small grain size (e.g. a 9-nm sample), the shoulder peak evidently appears on the higher-binding-energy side. The main peak width of the Mn–2p core-level spectra becomes wide for samples with decreasing average grain size. The remarkable aspect of the Mn–3s core-level spectra is that the peak is multiply split, with a complex peak structure. The exchange interaction of the 3s and 3d electrons in the Mn³⁺ ion can be used to explain this behavior. PACS 71.23.-k; 73.22.-f     

Evolution of crystal structure and electrochemical performance of layered Li<Subscript>1.20</Subscript>Ti<Subscript>0.44</Subscript>Cr<Subscript>0.36</Subscript>O<Subscript>2</Subscript>/C cathode materials with cycling

Carbon-coated layered Li_1.20Ti_0.44Cr_0.36O₂/C and pristine Li_1.20Ti_0.44Cr_0.36O₂ cathode materials have been synthesized through a sol–gel method followed by high-temperature calcination. Their electrochemical performances have been evaluated, which indicate that the Li_1.20Ti_0.44Cr_0.36O₂/C exhibits much higher cyclic stability and capacity than the pristine one. The initial delithiation capacity of the Li_1.20Ti_0.44Cr_0.36O₂/C can reach 217.1 mAh g^?1. The reversible capacity retention is 94 % after 100 cycles at current density of 23 mA g^?1. Ex situ X-ray diffraction and electrochemistry impedance spectroscopy coupled with impedance fitting have been employed to reveal evolution of the crystal structure and the electrochemical kinetics of the Li_1.20Ti_0.44Cr_0.36O₂/C with delithiation/lithiation cycling. The results indicate that the cation layers of the Li_1.20Ti_0.44Cr_0.36O₂/C experience order to disorder transition. The abrupt delithiation capacity fading and potential drop after the initial cycle are resulted from the order to disorder transition accompanying with steep increase of the charge transfer resistance and decrease of the exchange current density and the Li-ion diffusion coefficient simultaneously.     

Microstructure,dielectric and piezoelectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>-Ba(Ti<Subscript>0.95</Subscript>Zr<Subscript>0.05</Subscript>)O<Subscript>3</Subscript> lead-free ceramics with CuO sintering aid

Using an ordinary ceramic fabrication technique, we fabricated lead-free (1-x)(K_0.5Na_0.5)NbO₃-xBa(Ti_0.95Zr_0.05)O₃ ceramics with CuO sintering aid . Ba(Ti_0.95Zr_0.05)O₃ diffuses into (K_0.5Na_0.5)NbO₃ to form a new solid solution. The ceramics with perovskite structure possess orthorhombic phase at x≤0.04 and become tetragonal phase at x≥0.06. Both the paraelectric cubic–ferroelectric tetragonal and the ferroelectric tetragonal–ferroelectric orthorhombic phase transition temperatures decrease with increasing the concentration of Ba(Ti_0.95Zr_0.05)O₃. The doping of CuO effectively promotes the densification of the ceramics. The coexistence of the orthorhombic and tetragonal phases at 0.04<x<0.06 and the improvement in sintering performances of the ceramics significantly enhance the piezoelectric and dielectric properties at room temperature. The ceramics with x=0.04–0.06 and y=0.75–1.50 possess excellent properties: d₃₃=119–185 pC/N, k_P=37–44%, k_t=35–49%, ε=341–1129, cosδ=0.7–4.4% and T_c=312–346 °C. PACS 77.65.-j; 77.84.Dy; 77.84.-s     

Domain structure and charge ordering in a layered manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>2</Subscript>O<Subscript>7</Subscript> crystal

Charge ordering in a layered manganite La_1.2Sr_1.8Mn₂O₇ crystal with structural domains was studied using neutron diffraction in the temperature range 175–700 K. The wave vector of the charge ordering in the crystal is found to be q ? {0.2, 0, 0}2π/a. It is argued that the actual domain structure of the anisotropic crystal affects its charge-ordering state.     

Band structure of a new layered La<Subscript>3</Subscript>Ni<Subscript>4</Subscript>P<Subscript>4</Subscript>O<Subscript>2</Subscript> superconductor

The ab initio FLAPW-GGA calculations of the band structure of a new layered low-temperature (T _C ～ 2.2 K) La₃Ni₄P₄O₂ superconductor are presented. The energy bands, distributions of the densities of electron states, charge states of the atomic layers, low-temperature electron specific heat, and molar Pauli paramagnetic susceptibility for La₃Ni₄P₄O₂ have been determined. They are discussed compared to the existing experimental data.     

Elastic,electronic structure,and optical properties of orthorhombic Na<Subscript>3</Subscript>AlF<Subscript>6</Subscript>: a first-principles study

First-principles investigation of elastic, electronic, and optical properties of orthorhombic Na₃AlF₆ has been carried out by DFT using plane-wave pseudo-potentials within the LDA and GGA. Calculated lattice parameters agree well with experimental results. From calculated elastic constants, Na₃AlF₆ is a mechanically stable anisotropic and behaves in a ductile manner. Electronic structure analysis indicates that Na₃AlF₆ behaves as an insulator with a direct band gap of 6.065 eV in LDA and 5.868–5.949 eV in GGA. DOS, population analysis, and charge densities difference indicate that Al-F bonds are mainly ionic as well as partially covalent due to the hybridization of F-2p and Al-3s (3p) states. Moreover, the imaginary part of calculated dielectric function ε₂(ω) shows three prominent peaks due to the inter band transitions F 2p states→Na 3s states. From calculated ε (ω), other optical properties such as reflectivity and refractive index are also obtained up to the photon energy range of 40 eV.     

Influence of K<Subscript>2</Subscript>Ti<Subscript>6</Subscript>O<Subscript>13</Subscript> on dielectric and barrier properties of polymer

Polymer composite comprising polyvinylidene fluoride (PVDF) and potassium hexatitante (K₂Ti₆O₁₃) was synthesized by solution casting. The effect of K₂Ti₆O₁₃ on surface, thermal, and electrical properties of polymer composite were investigated. The addition of K₂Ti₆O₁₃ with polymer leads to thermal degradation and transition of polymer composite from semi-crystalline to amorphous phase. The optimum results of contact angle for different loading wt% of K₂Ti₆O₁₃ were directly correlated with the surface morphology. Our experimental results confirmed the incorporation of K₂Ti₆O₁₃ in polymer by SEM micrographs. The evaluated dielectric properties (ε' = 424; tan δ = 2.14 at 130 °C and 100 Hz frequency for 20 wt% loading of K₂Ti₆O₁₃) for polymer composite are higher in compared to pure polymer. The enhancement in dielectric constant and changing the surface properties of polymer composite can be used for the development of electrochemical storage device applications.