Two-Photon Raman scattering and high excitation luminescence in ZnTe

Two-Photon-Raman Scattering (TPRS) and the luminescence of ZnTe are investigated when the samples are highly excited with a tunable narrow-band dye-laser. In luminescence, one observes emission bands due to the well-known inelastic exciton-exciton scattering at intermediate excitation intensities, and the recombination radiation of an electronhole plasma (EHP) at the highest excitation levels. For the first time, TPRS is reported in ZnTe. From the change in the TPRS lines in magnetic fields up to 10T we deduce a diamagnetic shift of 1.2°10^–2 meV/T² of the free longitudinal exciton. This value is in good agreement with results obtained by other authors from reflection spectroscopy.     

Electron-phonon interaction in Raman scattering of Li-doped ZnTe

Raman scattering has been measured at low temperatures on Li doped ZnTe, using Kr and dye lasers. Besides the usual phonon spectrum, electronic transitions between acceptor bound states 1S→2S (A band), 1S→3S, 1S→4S, are observed. A peak located between the TO and LO bands is interpreted in terms of a bound LO-phonon mode related to the p acceptor states. The sidebands of the A band, at one and two LO-phonons are observed as well, whose energies are found to be respectively 12 and 26 cm^?1 smaller than the expected values. A simple self-energy model is invoked to explain the energy shift due to electron-phonon interaction.     

Raman scattering from plasmon-LO phonon coupled modes in ZnTe

Raman scattering spectra of LO phonon-plasmon coupled modes were observed at various temperatures below 400 K. The contributions of plasmon damping and phonon damping were analyzed by the use of the theoretical expression of the cross section and of Hall data. The temperature dependence of the calculated LO-phonon damping was discussed.     

Raman scattering and luminescence in coal and graphite

Raman scattering and luminescence have been observed in coal. The similarity of our results to those of disordered graphite is striking. The disorder-induced line in graphite is shown to be due to the high phonon density of states at 0 and K points of the Brillouin zone for graphite. The luminescence shows spectra having anti-stoke parts indicating the presence of multi-step processes. The Raman spectra are not affected significantly by the mineral matter contents in coal, thus our observations offer a new approach for the study of the microstructure of coal.     

Electronic Raman scattering and infrared absorption by arsenic acceptors in ZnTe

We have measured electronic Raman scattering spectra and infrared absorption spectra of arsenic doped ZnTe. Electronic transitions from the ground state to the excited states in the arsenic acceptor and also vibronic transitions accompanying 1 LO phonon have been observed in both spectra. Experimentally determined acceptor levels are compared with the theoretical calculation.     

Raman scattering in multilayer structures with CdTe quantum dots in ZnTe

Raman spectra in superlattices composed of layers of self-assembled CdTe quantum dots separated by ZnTe barriers are investigated. As the barrier thickness increases, a high-frequency shift of all peaks is observed, which is explained by a decrease in the lattice constant averaged over the volume of the entire structure. Peaks are found at a CdTe TO mode frequency of 140 cm^?1 and also at 120 cm^?1. The first peak is assigned to the symmetric Coulomb (interface) mode of the quantum dot material, and the low-frequency peak is assigned to the symmetric mode of the phonons captured in the quantum dot. This combination of modes in structures with quantum dots has not been observed previously.     

Resonant Raman scattering and luminescence of excitonic polaritons

Resonant light scattering spectra of excitonic polaritons are calculated with a model system consisting of one exciton band and LO and LA phonons by solving a balance equation describing the kinetic energy relaxation of polariton. The relative intensity of Raman sattering and luminescence changes with varying the incident photon energy because of the competition among various decay mechanisms of polariton. The results are in qualitative agreement with recent experimental observations.     

Raman scattering and exciton luminescence at low temperatures

A theoretical study is made of the effect of Raman scattering of light in crystals on their exciton luminescence. The polariton concept is used to show that Raman scattering may play a determinative role in the low-temperature luminescence of excitons with a large oscillator strength. The luminescence spectrum calculated on a computer by the Monte Carlo method is in good agreement with experimental data. This enables a number of experimental facts concerning the luminescence of crystals at low temperatures to be ascribed to the influence of Raman scattering.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 100–103, January, 1973.     

Raman scattering and luminescence of yttria nanopowders and ceramics

We have studied Raman scattering in yttria nanopowders and ceramics that was excited by radiation at wavelengths of 514.5 and 632.8 nm. We show that, in undoped nanopowders and cubic phase of doped yttria ceramics, only the Raman scattering by phonons is observed, with no other Raman scattering centers having been revealed. In nanopowders of the monoclinic phase, we have observed an additional Raman line with a Raman shift of 1093 ± 4 cm^?1. If all the objects under investigation are excited by the radiation at a wavelength of 514.5 nm, their spectra exhibit four series of photoluminescence lines, two of which (at λ = 521–523 and 538–564 nm) are emitted by Er³⁺ ions, “impurity” dopants, while the other two lines (at λ = 607–635 and 644–684 nm) are emitted by intrinsic centers. Under excitation by the radiation at a wavelength of 632.8 nm, only a series of bands at λ = 644–684 nm is emitted. In addition to these photoluminescence bands, neodymium-doped ceramics show photoluminescence bands of Nd³⁺ ions. We have shown that intrinsic luminescence centers, which occur in all the examined specimens, are capable of acting as acceptors with respect to neodymium ions excited to the upper laser level.     

Resonance Raman scattering of excitonic polaritons by LO and acoustic phonons in ZnTe

We have observed dispersive two-phonon Raman scattering of polaritons by LO and acoustic phonons near the lowest exciton state of ZnTe. From the Stokes shifts of these Raman lines, it has been found that the scattering process switches from an acoustic phonon followed by one LO phonon to the reversed one: a LO phonon followed by an acoustic one.     

Resonant Raman scattering from CdTe/ZnTe self-assembled quantum dot structures

We report resonant Raman scattering results of CdTe/ZnTe self-assembled quantum dot (QD) structures. Photoluminescence spectra reveal that the band gap energies of the CdTe QDs decrease with the increase of CdTe thickness from 2.0 to 3.5 monolayers, which indicates that the size of the QDs increases. When the CdTe/ZnTe QD structures are excited by non-resonant excitation, a longitudinal optical (LO) phonon response from the ZnTe barrier material is observed at 206 cm⁻¹. In contrast, when the CdTe/ZnTe QD structures are resonantly excited near the band gap energy of the QDs, additional phonon modes emerge at 167 and 200 cm⁻¹, while the ZnTe LO phonon response completely disappears. The 167 cm⁻¹ mode corresponds to the LO phonon of the CdTe QDs. A spatially resolved Raman scattering from the cleaved edge of the QD sample reveals that the 200 cm⁻¹ mode is strongly localized at the interface between the CdTe QDs and ZnTe cap layer. This phonon mode is attributed to the interface optical (IO) phonon. The analytically calculated value of the IO phonon energy using a dielectric continuum approach, assuming a spherical dot boundary, agrees well with the experimental value.     

Exciton-hole scattering in ZnTe

Low-temperature luminescence of high-purity polycrystalline ZnTe was studied at various stationary excitation levels. It was found that edge luminescence spectra obtained at enhanced excitation levels are dominated by the radiation produced in exciton scattering from holes generated in Auger recombination of excitons bound to neutral acceptors (Cu).     

On the excitation of four magnons in Raman scattering

Raman scattering by four magnons in antiferromagnets is studied. It is shown that the excited-state exchange mechanism resulting in two-magnon scattering at the same time gives four-magnon scattering as well. The intensity and line shape of this scattering is computed numerically for simple cubic systems. The agreement with experimental data is fairly good for KNiF₃, if magnon-phonon interaction is taken into account.     

Raman scattering from the upper and lower modes of surface phonon polaritons in ZnTe

The upper and lower modes of surface phonon polaritons have been observed in free-standing thin slabs (～7 μm) of single-crystal ZnTe by a conventional Raman-scattering technique at room temperature. The experimental dispersion relations were measured in various scattering angles (outside the sample) from 0.9° to 2.0° and agree with the theoretical dispersion relations. The main factors enabling us to observe the two surface modes are the appropriate selections of the material with a small attenuation factor for surface phonon polaritons and of the thickness of the sample slabs.     

Study of far-infrared reflection and Raman scattering spectra in reactive ion, etched ZnTe

Far-infrared reflection and Raman scattering measurements have been carried out on reactive ion, etched p-ZnTe samples. The averaged thickness of the surface damaged layer is found to be in the range of 1.0－1.5μm, and the, etch-induced defect density is in the order of 10^{18}cm^{-3}. The Raman intensity ratio between the second-order Raman peaks and the first-order longitudinal optical phonons reveals an increase trend with the radio frequency (rf) power. With the aid of related theories, we discuss the effects of the rf plasma power and the concentration of CH_4/H_2 on the damage, disorder, and the second-order Raman structures in p-ZnTe samples.