Infrared active phonon modes and ionicity of single crystal MgAl2O4

Near-normal incident infrared reflectivity spectra of （100） MgAl2O4 spinel single crystal have been measured at different temperatures in the frequency region between 50 and 6000 cm^-1. Eight infrared-active phonon modes are identified, which are fitted with the factorized form of the dielectric function. The dielectric property and optical conductivity of the MgAl2O4 crystal are analysed. From TO/LO splitting, the effective Szigeti charges and Born effective charges at different temperatures are calculated for studying the ionicity and the effect of polarization. Based on the relationship between the （LO-TO）1 splitting, which represents the transverse and longitudinal frequencies splitting of the highest energy phonon band in the reflectivity spectrum, and the ionic-covalent parameter, the four main phonon modes are assigned. MgA1204 can be considered as a pure ionic crystal and its optical characters do not change with decreasing temperature, so it may be used as a suitable substrate for high-Tc superconducting thin films.     

BaTiO3和Ce:BaTiO3单晶的高温喇曼散射研究

从室温至180℃测量了BaTiO₃和Ce:BaTiO₃单晶的偏振喇曼谱,在X(ZZ)Y几何配置下发现了三条频率分别为986,1204和1480cm^-1的新谱线.根据喇曼散射截面的温度依赖关系,确认这些新谱线对应二阶喇曼散射,而A₁(TO)谱中位于275和514cm^-1处的非对称宽峰则属于一阶喇曼散射.在此基础上,对立方相BaTiO₃的喇曼谱和结构相变机制进行了讨论.通过比较B     

LiB3O5单晶的偏振喇曼散射谱

在室温下测量了LiB₃O₅单晶的各种振动类的偏振喇曼散射谱。利用因子群分析和变温测量等方法以及BO₃,BO₄基团振动谱带的结果,对振动模进行了初步指认。根据LO-TO劈裂的实验结果,计算出该晶体的静态介电系数和各极化模的有效电荷。 关键词：     

Far-infrared optical properties of CrCl3 and CrBr3

We measured the far-infrared transmittance and reflectance spectra of the layered compounds CrBr₃ and CrCl₃ at normal and oblique incidences and at room temperature. The results are compared with the spectra from previous Raman measurements and are analyzed on the basis of the unit cell group method applied to the diperiodic crystalline structure of a single layer. A fit of the CrBr₃ reflectivity spectrum with damped Lorentzian oscillators is made which also allows us to evaluate the static dielectric constant ?₀.     

Electron spin resonance investigation of the substitution of Fe3^＋ for Ti4^＋ ions in rutile TiO2 single crystal

A Fe doped rutile TiO 2 single crystal is grown in an O 2 atmosphere by the floating zone technique.Electron spin resonance (ESR) spectra clearly demonstrate that Fe 3+ ions are substituted for the Ti 4+ ions in the rutile TiO 2 matrix.Magnetization measurements reveal that the Fe:TiO 2 crystal shows paramagnetic behaviour in a temperature range from 5 K to 350 K.The Fe 3+ ions possess weak magnetic anisotropy with an easy axis along the c axis.The annealed Fe:TiO 2 crystal shows spin-glass-like behaviours due to the aggregation of the ferromagnetic clusters.     

Optical constants of Cu(In0.7Ga0.3)5Se8 and Cu(In0.4Ga0.6)5Se8 crystals

Variable angle spectroscopic ellipsometry has been applied to characterize the optical constants of bulk Cu(In_0.7Ga_0.3)₅Se₈ and Cu(In_0.4Ga_0.6)₅Se₈ crystals grown by the Bridgman method. The spectra were measured at room temperature over the energy range 0.8-4.4 eV. Adachi’s model was used to calculate the dielectric functions as well as the spectral dependence of complex refractive index, absorption coefficient, and normal-incidence reflectivity. The calculated data are in good agreement with the experimental ones over the entire range of photon energies. The parameters such as strength, threshold energy, and broadening, corresponding to the E₀, E_1A, and E_1B interband transitions, have been determined using the simulated annealing algorithm.     

Temperature dependence of the luminescence properties of LaCl3：Ce crystal

The optical properties of LaCl3：Ce crystal are reported in this paper. Optical transmission spectrum, photoluminescence and time resolved photoluminescence spectra at different temperatures are investigated. It is found that optical transmittance is as high as 80% between 320 nm and 600 nm, and no obvious absorption band is found in this region. Emission intensity and decay time of photoluminescence are quite stable with the change of the temperature between 80 K and 500 K. No thermal quenching is present up to 500 K, and decay time keeps at 17±2 ns. With the increase of the temperature, the whole emission bands and excitation bands present broadening and overlapping, leading to the strengthening of re-absorption of the Ce^3＋ emission, which makes the emission spectra have a red shift trend.     

Infrared reflectivity of Ag6Ge10P12

Infrared reflectivity spectra of p-type Ag₆Ge₁₀P₁₂ single crystals were measured at room temperature in the wavenumber range from 180 to 4000 cm^-1. Fits to a dielectric function including contributions from lattice oscillators and free carriers gave the parameters of five lattice vibrational modes and an effective hole mass of m_p/m_o = 2.3.     

I.R. reflection and transmission properties of KH2PO4

The i.r. a-axis reflection spectrum of KDP at 125K has been examined in the range 360-60 cm^?1, and the a — and c-axis reflection spectra have been measured at 290K in the range 700-10 cm^?1. The real and imaginary parts of the dielectric constants (?′ and ?″) have been obtained from the reflectivity measurements by Kramers-Kronig analyses. The low-frequency values of ?′ at 290K agree well with microwave values. The transmission spectra of thin KDP films at 290,125 and 110K have been examined and are found to be closely correlated with the ?″ spectra. We conclude that the films behave as if they contain crystallites of large surface area. A tentative identification of the lowest-frequency c-axis polar mode has been made in the 125K transmission spectrum.     

Soft vibrational mode in LiNbO3 and LiTaO3

The temperature dependence of the far-infrared reflectivity as obtained with a scanning interferometer for the A₁- and E-type modes of both LiNbO₃ and LiTaO₃ is reported in the ferroelectric phase. Results of a Kramers-Kronig analysis are compared with Raman and neutron scattering data which are controversial about the existence of a soft vibrational mode. For LiTaO₃, spectra are obtained 300 K above the Curie temperature, in the paraelectric phase. The lowest-frequency A₁ (TO) mode is unambiguously found as soft and becomes rapidly overdamped.     

Optical and electrical properties of plasma-oxidation derived HfO2 gate dielectric films

High-k gate dielectric HfO₂ thin films have been deposited on Si(1 0 0) by using plasma oxidation of sputtered metallic Hf thin films. The optical and electrical properties in relation to postdeposition annealing temperatures are investigated by spectroscopic ellipsometry (SE) and capacitance-voltage (C-V) characteristics in detail. X-ray diffraction (XRD) measurement shows that the as-deposited HfO₂ films are basically amorphous. Based on a parameterized Tauc-Lorentz dispersion mode, excellent agreement has been found between the experimental and the simulated spectra, and the optical constants of the as-deposited and annealed films related to the annealing temperature are systematically extracted. Increases in the refractive index n and extinction coefficient k, with increasing annealing temperature are observed due to the formation of more closely packed thin films and the enhancement of scattering effect in the targeted HfO₂ film. Change of the complex dielectric function and reduction of optical band gap with an increase in annealing temperature are discussed. The extracted direct band gap related to the structure varies from 5.77, 5.65, and 5.56 eV for the as-deposited and annealed thin films at 700 and 800 °C, respectively. It has been found from the C-V measurement the decrease of accumulation capacitance values upon annealing, which can be contributed to the growth of the interfacial layer with lower dielectric constant upon postannealing. The flat-band voltage shifts negatively due to positive charge generated during postannealing.     

用密度泛函理论研究氮化硅新相的电子结构、光学性质和相变

运用第一性原理赝势方法,对氮化硅新相(六方Pˉ6和Pˉ6′相)的电子结构、光学性质和相变过程进行分析,研究能带结构、介电函数谱、反射谱和能量损失函数的变化机理.研究发现,β→Pˉ6→δ相变是可行的,在室温下β→Pˉ6和Pˉ6→δ相变的临界压强分别为42.9和47.7 GPa;相界的斜率为正值表明Pˉ6→δ相变过程伴随着晶胞体积的塌缩;Pˉ6和Pˉ6′相分别属于直接带隙和间接带隙半导体,能隙宽度分别为4.98和4.01 eV;得到了两相的零频介电常数;反射谱表明,两相的强反射峰均位于真空紫外线区域,因此可以用作紫外光屏蔽或紫外探测材料;在可见光区域,两相表现为近似透明.     

Structure and luminescence of Ca2Si5N8：Eu^2＋ phosphor for warm white light-emitting diodes

We have synthesized Ca 2 Si 5 N 8:Eu 2+ phosphor through a solid-state reaction and investigated its structural and luminescent properties.Our Rietveld refinement of the crystal structure of Ca 1.9 Eu 0.1 Si 5 N 8 reveals that Eu atoms substituting for Ca atoms occupy two crystallographic positions.Between 10 K and 300 K,Ca 2 Si 5 N 8:Eu 2+ phosphor shows a broad red emission band centred at ～1.97 eV-2.01 eV.The gravity centre of the excitation band is located at 3.0 eV-3.31 eV.The centroid shift of the 5d levels of Eu 2+ is determined to be ～1.17 eV,and the red-shift of the lowest absorption band to be ～ 0.54 eV due to the crystal field splitting.We have analysed the temperature dependence of PL by using a configuration coordinate model.The Huang-Rhys parameter S=6.0,the phonon energy ν=52 meV,and the Stokes shift S=0.57 eV are obtained.The emission intensity maximum occurring at ～200 K can be explained by a trapping effect.Both photoluminescence (PL) emission intensity and decay time decrease with temperature increasing beyond 200 K due to the non-radiative process.     

Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films

To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80 K to room temperature. The saturated polarization (P_sat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (P_r) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects-domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O₃ films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.     

Theoretical studies on the structural, electronic, and optical properties of Cu2CdGeSe4

We investigate the electronic structure for Cu₂CdGeSe₄ in stannite structure with the first-principles method. This crystal is the direct band gap compound. In addition, the dielectric function, absorption coefficient, reflectivity, and energy-loss function are studied using the density functional theory within the generalized gradient approximation. We discuss the optical transitions between the valence bands and the conduction bands in the spectra of the imaginary part of the dielectric function at length. We also find a very high absorption coefficient and wide absorption spectrum for this material. The prominent structures in the spectra of reflectivity and energy-loss function are discussed in detail.     

CaCu3Ti4O12块材和薄膜的巨介电常数

用固相反应法和脉冲激光沉积(PLD)制备了CaCu₃Ti₄O₁₂块材和薄膜，获得了相对介电常数ε′（1kHz,300K)高于14000的介电特性，是目前该体系最好的结果.报道了(00l)取向高质量CaCu₃Ti₄O₁₂外延薄膜及其介电性质.C aCu₃Ti₄O₁₂相对介电常数ε′在100—300K温度范围 内 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 巨介电常数 PLD     

Study on high-temperature spectra of asymptotic asymmetric-top radical SiO2

Total internal partition sums are calculated in the product approximation at temperatures up to 6000 K for the asymptotic asymmetric-top SiO2 molecule.The rotational partition function and the vibrational partition function are calculated with the rigid-top model and in the harmonic oscillator approximation,respectively.Our values of the total internal partition sums are consistent with the calculated value in the Gaussian program within 0.137% at 296 K.Using the calculated partition functions and the rotationless transition dipole moment squared as a constant,we calculate the line intensities of 001-000 band of SiO2 at normal,medium and high temperatures.Simulated spectra of the 001-000 band of the asymptotic asymmetric-top SiO2 molecule at 2000,5000 and 6000 K are also obtained.     

Anomalous thermal expansion and spontaneous magnetostriction of Gd2Fe16Cr compound

The structural and the magnetic properties of Gd 2 Fe 16 Cr compound are investigated by x-ray diffraction and magnetization measurements.The Gd 2 Fe 16 Cr compound has a rhombohedral Th 2 Zn 17-type structure.There exist an anisotropic strong spontaneous magnetostriction and a negative thermal expansion in the magnetic state of Gd 2 Fe 16 Cr compound.The average thermal expansion coefficient ā=-7.03 × 10-6 /K in a temperature range of 294-454 K and ā=-1.31 × 10-5 /K in 454-572 K are obtained.The spontaneous magnetostrictive deformation and the Curie temperature are discussed.     

Polarized infrared reflectivity study in charge density wave conductor Tl0.3MoO3

Polarized infrared reflectivity measurements between 300 and 10 K have been carried out on charge density waves (CDW) conductor blue bronze Tl_0.3MoO₃. Three important features are observed: (i) A bump at 1155 cm⁻¹ in the reflectivity spectra of Tl_0.3MoO₃ at 300 K is a precursor of the Peierls gap due to optical excitations across a pseudogap, and this kind of Peierls-like gap opens gradually with decreasing temperature from 180 to 160 K. (ii) The three sharp modes as “triplet” of infrared reflectivity between 800 and 1000 cm⁻¹ of Tl_0.3MoO₃ along [1 0 2] axis show red shift compared to K_0.3MoO₃ and Rb_0.3MoO₃, which is assigned to the increase of the distance of Mo-O bond with the substitution of thallium ions. (iii) Two peaks at about 514 and 644 cm⁻¹ in the far-infrared reflectivity spectra of Tl_0.3MoO₃ along [1 0 2] direction are suggested to be the electronic transitions from the valence band to the midgap state and from occupied midgap state to the conduction band, respectively.     

Optical properties of new organic conductors based on the BEDT-TSeF molecule (the κ-(BETS)4Hg2.84Br8 superconductor and κ-(BETS)4Hg3Cl8 Metal) in the range 300–15 K

Polarized reflectance and optical conductivity spectra of single crystals of two new isostructural organic conductors based on the BEDT-TSeF molecule, namely, the κ-(BETS)₄Hg_2.84Br₈ superconductor (T _c =2 K) and the κ-(BETS)₄Hg₃Cl₈ metal, which undergoes a smooth transition to the dielectric state near 35 K, have been obtained in the spectral region 700–6500 cm⁻¹ at temperatures of 300–15 K. At 300 K, the spectra of both compounds are nearly identical and differ from the Drude spectrum characteristic of metals. The nature of the observed difference is discussed, and the spectra are described in terms of a cluster approach with inclusion of electron-electron correlations in the Hubbard approximation combined with the Drude model. The parameters of the theory were determined, including the electron transfer integrals between molecules in a cluster. The spectra in the conducting plane of the crystals were found to be essentially anisotropic, which should be assigned to specific features of in-plane interaction between molecules. The spectra of the superconductor and the metal become increasingly different as the temperature is lowered. The spectra of the metal obtained for T<150 K exhibit splitting of the broad electronic maximum in the mid-IR region into two bands, which is accompanied by a splitting of a vibronic feature deriving from electron interaction with intramolecular BETS vibrations of ν₃(A _g ) symmetry. No such splitting is observed in the superconductor spectra with decreasing temperature. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 1921–1929. Original Russian Text Copyright ? 2004 by Vlasova, Drichko, Petrov, Semkin, Zhilyaeva, Lyubovskaya, Olejniczak, A. Kobayashi, H. Kobayashi.