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采用电化学手段以及Mott-Schottky理论, 并结合氧化膜点缺陷模型(PDM)分析研究了Co-W合金镀层在1 mol• L-1 NaOH溶液中表面氧化膜的半导体性质, 并分别计算出了不同W含量的Co-W合金镀层在-0.15, -0.25和-0.35 V三个不同电位下阳极氧化后氧化膜的供体密度、平带电位及氧空穴扩散系数. 结果表明, Co-W合金镀层在1 mol•L-1 NaOH溶液中表面氧化膜的Mott-Schottky曲线线性区斜率为正, 表现出N型半导体性质|随着阳极氧化电位的升高或合金镀层W含量的降低, 氧化膜供体密度ND逐渐增大, 导致氧化膜被破坏或发生点蚀的几率升高|随着阳极氧化电位的降低或合金镀层W含量的降低, 氧化膜平带电位呈降低趋势, 说明其耐蚀性升高|不同W含量的Co-W合金镀层在三个不同电位下阳极氧化后的氧化膜的氧空穴扩散系数为(1.543~8.533)×10-14 cm2•s-1. 相似文献
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ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option. 相似文献
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ChemInform is a weekly Abstracting Service, delivering concise information at a glance that was extracted from about 100 leading journals. To access a ChemInform Abstract of an article which was published elsewhere, please select a “Full Text” option. The original article is trackable via the “References” option. 相似文献