Formation of conical microstructures upon laser evaporation of solids

The formation and development of the large-scale periodic structures on a single crystal Si surface are studied upon its evaporation by pulsed radiation of a copper vapor laser (wavelength of 510.6 nm, pulse duration of 20 ns). The development of structures occurs at a high number of laser shots (∼10⁴) at laser fluence of 1–2 J/cm² below optical breakdown in a wide pressure range of surrounding atmosphere from 1 to 10⁵ Pa. The structures are cones with angles of 25, which grow towards the laser beam and protrude above the initial surface for 20–30 μm. It is suggested that the spatial period of the structures (10–20 μm) is determined by the capillary waves period on the molten surface. The X-ray diffractometry reveals that the modified area of the Si substrate has a polycrystalline structure and consists of Si nanoparticles with a size of 40–70 nm, depending on the pressure of surrounding gas. Similar structures are also observed on Ge and Ti. Received: 12 February 2000 / Accepted: 28 March 2000 / Published online: 20 June 2001     

Reorientation of the liquid crystal director in a Hele-Shaw cell

Reorientation of the liquid crystal (LC) director due to hydrodynamical motions in a Hele-Shaw cell is studied theoretically. These motions arise when LC is pushed by viscous stress of a less viscous fluid or gas (e.g., air). We have obtained the value of 1 rad for the probe light wave phase change at the LC film thickness of 100 μm and pressure gradient of dp/dx = 10⁻⁵ Pa/m in the air.     

Formation of highly organised,periodic microstructures on steel surfaces upon pulsed laser irradiation

We present results on the growth of highly organised, reproducible, periodic microstructure arrays on a stainless steel substrate using multi-pulsed Nd:YAG (wavelength of 1064 nm, pulse duration of 7 ns, repetition rate of 25 kHz, beam quality factor of M ²∼1.5) laser irradiation in standard atmospheric environment (room temperature and normal pressure) with laser spot diameter of the target being ∼50 μm. The target surface was irradiated at laser fluence of ∼2.2 J/cm² and intensity of ∼0.31×10⁹ W/cm², resulting in the controllable generation of arrays of microstructures with average periods ranging from ∼30 to ∼70 μm, depending on the hatching overlap between the consecutive scans. The received tips of the structures were either below or at the level of the original substrate surface, depending on the experimental conditions. The peculiarity of our work is on the utilised approach for scanning the laser beam over the surface. A possible mechanism for the formation of the structures is proposed.     

Effect of air pressure on the spatial and emission characteristics of an aluminum laser torch under subthreshold conditions of ablation

The spatial characteristic of an aluminum laser-induced plasma are studied at a laser radiation intensity of (3.8–4.8) × 10⁸ W/cm² and an air residual pressure of 6.7–133.3 Pa. It is found that the duration of the aluminum plasma glow is 50 μs and decreases with decreasing laser power output. The glow intensity reaches a maximum at t = 1.4 μs and rises with laser energy. Typical sizes of the emitting area on the laser torch are determined.     

Improved laser-induced forward transfer of organic semiconductor thin films by reducing the environmental pressure and controlling the substrate–substrate gap width

Laser-induced forward transfer (LIFT) has been investigated for bilayer transfer material systems: silver/organic film (Alq₃ or PFO). The LIFT process uses an intermediate dynamic release layer of a triazene polymer. This study focuses on the effect of introducing a controlled donor–receiver substrate gap distance and the effect of doing the transfer at reduced air pressures, whilst varying the fluence up to ∼200 mJ/cm². The gap between ‘in-contact’ substrates has been measured to be a minimum of 2–3 μm. A linear variation in the gap width from ‘in contact’ to 40 μm has been achieved by adding a spacer at one side of the substrate–substrate sandwich. At atmospheric pressure, very little transfer is achieved for Alq₃, although PFO shows some signs of successful doughnut transfer (with a large hole in the middle) in a narrow fluence range, at gaps greater than 20 μm. For the transfer of Ag/PFO bilayers at atmospheric pressure, the addition of a PFO layer onto the receiver substrate improved the transfer enormously at smaller gaps and higher fluences. However, the best transfer results were obtained at reduced pressures where a 100% transfer success rate is obtained within a certain fluence window. The quality of the pixel morphology at less than 100 mbar is much higher than at atmospheric pressure, particularly when the gap width is less than 20 μm. These results show the promise of LIFT for industrial deposition processes where a gap between the substrates will improve the throughput.     

Pulsed holmium laser ablation of tissue phantoms: correlation between bubble formation and acoustic transients

5 Pa served as tissue phantoms to evaluate such effects. Holmium laser pulses (wavelength: 2.12 μm, duration: 180 μs FWHM), were delivered through 400 and 600 μm diameter optical fibers inserted into cubes of clear gel. Bubble effects were investigated using simultaneous flash micro-videography and pressure recording for radiant exposures of 20–382 J/cm². Bubble formation and bubble collapse induced pressure transients were observed regardless of phantom stiffness. Bubbles of up to 4.2 mm in length were observed in gels with a Young’s modulus of 2.9×10⁵ Pa at a pulse energy of 650 mJ. An increase of Young’s modulus (reduction in water content) led to a monotonic reduction of bubble size. In the softest gels, bubble dimensions exceeded those observed in water. Pressure amplitudes at 3 mm decreased from 100±14 bars to 17±6 bars with increasing Young’s modulus over the studied range. Theoretical analysis suggested a major influence on bubble dynamics of the mass and energy transfer through the bubble boundary. Received: 26 August 1996/Revised version: 10 February 1997     

One-dimensional gallium nitride micro/nanostructures synthesized by a space-confined growth technique

Hexagonal GaN prismatic sub-micro rods and cone nanowires have been synthesized in a large scale by a novel and controllable space-confined growth method. The as-synthesized GaN products are highly crystalline with a wurtzite structure. The prismatic rods have lengths of 15∼20 μm and diameters of 400∼500 nm enclosed by hexagonal smooth side surfaces and a pyramidal end. And the cone nanowires have average diameters of 150∼200 nm and lengths up to several tens of μm with a cone tip. The photoluminescence (PL) studies reveal prominent band-gap UV emission properties of GaN products and narrow FWHM, indicating the excellent luminescent performance and high crystal quality. For field emission characteristic of GaN nanowires, the turn-on field is about 9.5 V/μm and the current density reaches 1.0 mA/cm² at an electric field of 18 V/ μm. The contrast experiments indicate a novel growth control can be achieved by using a graphite tube as reaction vessel. The sealed graphite tube combined with metallic initiator is greatly responsible for large-scale and uniform preparation of GaN prismatic rods and cone nanowires. Highly symmetric GaN hexagonal micropyramids are grown on a bare Si substrate. The growth mechanism and the control function of the graphite tube are demonstrated. These low-dimensional structures not only enrich semiconducting GaN family, but also are good building blocks for optoelectronic devices. PACS 81.10.Bk; 81.07.-b; 81.05.Ea     

Very high resolution CO laser spectrometer and first sub-Doppler line-shape studies near 60 THz (5 μm)

2 laser standards. Using this technique, we can tune the CO laser frequency with absolute frequency control within the gain profile of each laser transition. The frequency uncertainty is smaller than 15 kHz, corresponding to Δν/ν=2.5×10^-10. Moreover, we obtain a reduction of the CO laser linewidth by a factor of 2 down to 65 kHz, corresponding to a spectral resolution of δν/ν=1×10^-9. With this outstanding accuracy and resolution we studied the shape of saturation dips in rovibrational lines of CO and carbonyl sulfide (OCS) at low pressure (<5 Pa). The self-pressure-broadening rate of CO was found to be γ_c=+83(7) kHz/Pa in this pressure region. This value is about four times higher than values resulting from previous measurements at much higher pressures. To our knowledge the measurements described here are the first line-shape studies with sub-Doppler resolution in the 5 μm spectral region. Received: 4 November 1996     

Electrochromic materials from the visible to the infrared region: an example WO<Subscript>3</Subscript>

Herein, the example of the most typical electrochromic material, namely WO₃, is used to illustrate the potential of electrochromic materials for controlling infrared reflectance and hence, emissivity. Playing with various growth parameters, contrast in reflectance between the inserted H _xWO₃ and deinserted WO₃ states as high as 73% in mid-wavelength band (MW, 3–5 μm) was achieved for 320 nm WO₃ films. The latter electrochromic materials were radio frequency sputtered on Au substrate at ambient temperature in 6 Pa of chamber pressure. In comparison, for long wavelength band (LW, 8–12 μm), the contrast in reflectance did not exceed 30%. The origins of the various electrochromic behaviours are correlated to the film structure, morphology and composition, indicating better properties for porous, nonstoichiometric films. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Effect of the electron beam and ion flux parameters on the rate of plasma nitriding of an austenitic stainless steel

The method of nitriding of metals in an electron beam plasma is used to change the current density and energy of nitrogen ions by varying the electron beam parameters (5–20 A, 60–500 eV). An electron beam is generated by an electron source based on a self-heated hollow cathode discharge. Stainless steel 12Kh18N10T is saturated by nitrogen at 500°C for 1 h. The microhardness is measured on transverse polished sections to obtain the dependences of the nitrided layer thickness on the ion current density (1.6–6.2 mA/cm²), the ion energy (100–300 eV), and the nitrogen-argon mixture pressure (1–10 Pa). The layer thickness decreases by 4–5 μm when the ion energy increases by 100 V and increases from 19 to 33 μm when the ion current density increases. The pressure dependence of the layer thickness has a maximum. These results are in conflict with the conclusions of the theory of the limitation of the layer thickness by ion sputtering, and the effective diffusion coefficient significantly exceeds the well-known reported data.     

A measuring system for reflection coefficient investigations of materials heated by CO2-laser radiation in a controllable atmosphere

An experimental system is described which is intended for measurements of reflection coefficients at wavelengths of 0.63; 1.15; 3.39, and 10.6 μm and of the thermodynamic temperature of the surface of materials heated in air or in an inert atmosphere at pressures from 1.3·10² to 1.3·10⁵ Pa. An analysis of the errors in reflection coefficient and temperature measurements is made. B. I. Stepanov Institute of the Physics of the National Academy of Sciences of Belarus, 70, F. Skorina Ave., Minsk, 220072, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 608–611, July–August, 1998.     

Crown-like structure development on titanium exposed to multipulse Nd:YAG laser irradiation

We report micrometre-sized crown-like structure growth on a Ti surface by multipulse Nd:YAG (λ=1.064 μm,τ=170 ns) laser irradiation in air at atmospheric pressure. The irradiation was performed at 8×10⁷ W/cm² laser-pulse intensity, below the ablation threshold. A ring-shape structure develops in the centre of the irradiation spot after the action of five laser pulses. The further increase of the laser-pulse number leads gradually to a crown-like structure, which has, for 150 pulses, a height of 120–140 μm above the non-irradiated Ti surface. The forming crater’s depth does not exceed the height of the grown structure. In the neighbouring zone, after the action of 25 laser pulses, microcracks of the oxide surface layer develop. With the next pulses this leads to the formation of a surface microrelief. The crown-like-structure growth is originated by molten material movement attributed to the laser-induced plasma-recoil pressure. Received: 6 June 2001 / Accepted: 6 January 2002 / Published online: 26 March 2002     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

Pearl-chain waveguides written at megahertz repetition rate

Waveguides in the form of connected pearls, written with sub-30 fs pulses centered at 800 nm at a repetition rate of 10 MHz, show high changes of the refractive index and, as a consequence, simple in-coupling. The value of the refractive index modification of these waveguides is as high as 10^-2, optical losses are 6 dB/cm (at 1.55 μm) and the mode field diameter is 8 μm at 670 nm. PACS 42.62.-b; 87.80.Mj; 42.82.Et     

Formation of nano-textured conical microstructures in titanium metal surface by femtosecond laser irradiation

We report for the first time that a regular array of sharp nano-textured conical microstructures are formed on the titanium metal surface by irradiation with ultrafast laser pulses of 130 fs duration, 800 nm wavelength in vacuum (∼1 mbar) or in 100 mbar He. The microstructures are up to 25 μm tall, and taper to about 500 nm diameters at the tip. Irradiation in the presence of SF₆, air or HCl creates a textured surface but does not create sharp conical microstructures. The surfaces of these microstructures exhibit periodic nano-texture of feature size comparable to the wavelength of light consistent with ripple formation. Contrary to pillar formation by femtosecond laser irradiation of silicon where the initial ripples evolve into the pillars and the ripples disappear, the ripples on titanium pillars have a much smaller periodicity than the pillars and remain on the surface of the pillars. The textured surface is pitch black compared to its original silver-grayish color, i.e, it exhibits greatly reduced reflectivity throughout the measured visible spectrum. PACS 52.38.Mf; 79.20.Ds; 81.07.-b; 81.16.-c; 82.53.-k     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

Nanosecond laser ablation and deposition of silicon

Nanosecond-pulsed KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) lasers were used to ablate a polycrystalline Si target in a background pressure of <10⁻⁴ Pa. Si films were deposited on Si and GaAs substrates at room temperature. The surface morphology of the films was characterized using scanning electron microscopy (SEM) and atomic force microscopy (AFM). Round droplets from 20 nm to 5 μm were detected on the deposited films. Raman Spectroscopy indicated that the micron-sized droplets were crystalline and the films were amorphous. The dependence of the properties of the films on laser wavelengths and fluence is discussed.     

CH<Subscript>3</Subscript>OH optically pumped by a <Superscript>13</Superscript>CO<Subscript>2</Subscript> laser: new laser lines and assignments

We report 12 new THz (far-infrared) laser lines from methanol (CH₃OH), ranging from 58.1 μm (5.2 THz) to 624.6 μm (0.5 THz). A ¹³CO₂ laser of wide tunability (110 MHz) has been used for optical pumping, allowing access to previously unexplored spectral regions. Optoacoustic absorption spectra were used as a guide to search for new THz laser lines, which have been characterized in wavelength, polarization, offset, relative intensity, and optimum operation pressure. For 20 laser lines previously observed, we have measured the absorption offset with respect to the ¹³CO₂ laser line center. PACS 33.20.Ea; 33.20.Vq; 33.80.-b     

ZnO nanorod micropatterning via laser-induced forward transfer

We report a method for micropatterning (25–900 μm² pixel size) of ZnO nanorods onto a silicon substrate via a low-temperature (overall under 100 °C) two-step process, involving a laser-based direct-write technique (laser-induced forward transfer) and sequential chemical growth. The rods produced via this route are aligned in the [0001] crystal direction. Photoluminescence shows, next to the band-gap emission, strong green-yellow emission centred at ∼570 nm. Additionally, the rod arrays show excellent field-emission properties with a threshold field for emission of 5 V/μm. PACS 61.82.Rx; 81.10.Dn; 81.16.Mk     

CO2 laser-induced plasma CVD synthesis of diamond

2 laser maintenance of a stationary optical discharge in a gas stream, exhausting over a substrate into the air (laser plasmatron). Nano- and polycrystalline-diamond films were deposited on tungsten substrates from atmospheric-pressure Xe(Ar):H₂:CH₄ gas mixtures at flow rates of 2 ?/min. A 2.5-kW CO₂ laser focused beam produced plasma. The deposition area was about 1 cm² and growth rates were up to 30–50 μm/h. Peculiarities and advantages of laser plasmatrons are discussed. Received: 15 January 1998/Accepted: 16 January 1998