Magnetoresistance in Co/AlOx/Co tunnel junction arrays

Lateral arrays of Co/AlO_x/Co junctions with dimensions down to 60 nm and inter-junction separations ∼60–100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe ∼10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.     

Thermal Stability of Ni-Fe/Co/Au/Co GMR Pseudo-Spin-Valves

Pseudo-spin-valves (PSV) structures, Ni₈₃Fe₁₇-3 nm / Co-2.5 nm / Au-t _Au / Co-2.5 nm, with 2.4t _Au3.2 nm were deposited by UHV magnetron sputtering. The weak ferromagnetic coupling J2×10^-6 J/m² between Ni-Fe/Co and Co layers and GMR effect 3% was found at RT. The GMR amplitude decreases monotonically from 5% at -100°C to 1% at 200°C. However, the slope of R(H) curve, i.e., GMR field sensitivity, is equal to about 1.5%/Oe and remains almost constant in the entire investigated temperature range. Additionally, our PSV display a good thermal stability, with no significant changes of magnetic and transport properties after annealing up to 250°C.     

Structure and magnetic anisotropy of Co/Cu/Co films

The energy of the magnetic anisotropy of Co/Cu/Co polycrystalline ultradisperse films is investigated as a function of the thickness of copper and cobalt layers. The influence of the structure parameters (the size and distribution of defects, the period and amplitude of roughnesses) on the surface and volume components of the magnetic anisotropy is analyzed. The parameters of the structure inhomogeneities and their distribution over the film surface are determined from two-dimensional Fourier spectra and electron microscope images of the films.     

Current-driven magnetization reversal and spin-wave excitations in Co /Cu /Co pillars

Using thin film pillars approximately 100 nm in diameter, containing two Co layers of different thicknesses separated by a Cu spacer, we examine the process by which the scattering from the ferromagnetic layers of spin-polarized currents flowing perpendicular to the layers causes controlled reversal of the moment direction in the thin Co layer. The well-defined geometry permits a quantitative analysis of this spin-transfer effect, allowing tests of competing theories for the mechanism and also new insight concerning magnetic damping. When large magnetic fields are applied, the spin-polarized current no longer fully reverses the magnetic moment, but instead stimulates spin-wave excitations.     

Magnetic anisotropy of Co/Cu/Co films with indirect exchange coupling

The effect of isothermal annealing on the magnetic anisotropy, bilinear and biquadratic exchange coupling energies, and domain structure of Co/Cu/Co trilayer fiilms with d_Co=6 nm and d_Cu=1.0 and 2.1 nm prepared by magnetron sputtering has been studied. It is shown that, under isothermal annealing, the biquadratic coupling energy decreases by more than an order of magnitude in films with d_Cu=1.0 nm and increases in films with d_Cu=2.1 nm. The fourth-order magnetic anisotropy is shown to be related to the existence of biquadratic exchange energy.     

Current-induced two-level fluctuations in pseudo-spin-valve (Co/Cu/Co) nanostructures

Two-level fluctuations of the magnetization state of pseudo-spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires ( approximately 40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10(7) A/cm(2) at room temperature. The statistical properties of the residence times in the parallel and antiparallel magnetization states reveal two effects with qualitatively different dependences on current intensity. The current appears to have the effect of a field determined as the bias field required to equalize these times. The bias field changes sign when the current polarity is reversed. At this field, the effect of a current density of 10(7) A/cm(2) is to lower the mean time for switching down to the microsecond range. This effect is independent of the sign of the current and is interpreted in terms of an effective temperature for the magnetization.     

Magnetization reversal and domains structures in (Co/Ni/Co/Pt) multilayers

Multilayers of [Co/Ni(t_Ni)/Co/Pt]_×4 are investigated for different Ni insertion layer thicknesses. The resulting magnetic properties and magnetic domain structures are compared with [Co/Ni]_×8 multilayers. As determined by magneto-optical Kerr effect microscopy and a vibrating sample magnetometer measurements, all multilayers exhibited a perpendicular magnetic anisotropy. It is found that the nucleation field and magnetic coercivity of [Co/Ni(t)/Co/Pt]_×4 multilayers are lower than (Co/Ni)_×8 and decreased with Ni thickness. Magnetization decay measurements reveal that these multilayers did not show an exponential decay behavior as was observed in rare earth transition metal alloys. Very narrow wires will remain stables for several hours even with an applied magnetic field closer to the coercivity. Insertion of very thin Ni in (Co/Pt) multilayers offers a good way to optimize the magnetic properties of the material and adjust the domain size for nanowire-based devices.     

Magnetic-Field-Induced Optical Second-Harmonic Generation Study of Co/Pt and Co/Ta Interfaces

Magnetic properties of an interface between cobalt and platinum or tantalum nanolayers have been studied by the optical second-harmonic generation and nonlinear magneto-optical Kerr effect methods. It has been shown that a high sensitivity of the second-harmonic generation method makes it possible to determine the orientation of the easy magnetization axis in the plane of a polycrystalline structure without measurement of the magnetic field dependence of second-harmonic generation. The comparison of the field dependences of magnetic-field-induced second-harmonic generation with the linear magneto-optical effect indicates the difference in the processes of magnetization reversal in Co/Pt and Co/Ta interfaces and the bulk of the cobalt film. In particular, a new linear in magnetization effect has been observed in the second harmonic that is symmetry-forbidden for uniformly magnetized structures.     

Current-induced magnetization reversal in high magnetic fields in Co/Cu/Co nanopillars

Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars (approximately 100 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At 4.2 K an abrupt and hysteretic increase in resistance is observed at high current densities for one polarity of the current, comparable to the giant magnetoresistance effect observed at low fields. A micromagnetic model that includes a spin-transfer torque suggests that the current induces a complete reversal of the thin Co layer to alignment antiparallel to the applied field--that is, to a state of maximum magnetic energy.     

Synthesis and magnetic states of cobalt in three-layer Co/Ge/Co films

The magnetic properties of three-layer Co-Ge magnetic films have been studied experimentally as a function of technological conditions of their deposition. It has been found that the films deposited at a high deposition rate have a granular structure, and the films obtained at a low deposition rate have an X-ray amorphous structure. Electron microscopy and nuclear magnetic resonance studies have demonstrated that, at the same cobalt layer thickness, the semiconductor granule sizes depend on the average semiconductor layer thickness and correlate with the formation of different cobalt phases (amorphous, cubic, and hexagonal). The thermomagnetic properties of the films have been investigated.     

Magnetic behaviour investigation on symmetric spin valves of Co／Cu／NiFe and NiFe／Cu／Co

In this paper,we have obtained and investigated the magnetic behaviours of the ferromagnetic layer in the symmetric spin valves of Co/Cu/NiFe and NiFe/Cu/Co by measuring with a vibrating sample magnetometer and analysing in terms of the multi-domain Ising models.It has been found that some magnetic layer can have quite different magnetic behaviours in different structures of spin valves,depending on the properties of the under-layer.In our investigation,we have found that the magnetic behaviour of a Co layer depends mainly on the magnetization of the under-layer,whereas this is not the case for the NiFe layer.     

Slow Oscillations of the Perpendicular Magnetization of the Pt/Co/Ir/Co/Pt Spin Valve

The time dependences of the transfer of the magnetic moment between stable magnetic states of heterostructures with two Pt/Co/Ir/Co/Pt ferromagnetic layers with the perpendicular magnetization have been studied. Spontaneous oscillations of the macroscopic magnetization with a period of several hours are observed after switching the magnetic field to a new value. The phase portrait of the magnetic relaxation corresponds to damped oscillations. The macrospin oscillation may be due to the high nucleation rate of the reverse magnetization phase induced by the exchange and magnetic dipole interaction between the phase nucleation centers, which arise in different layers. The changes in the Zeeman energy of the system under magnetic oscillations are considered.     

Thermal stability of the spin injection in Co/Ag/Co lateral spin valves

Spin injection, spin diffusion, and spin detection are investigated in Co/Ag/Co lateral spin valves at room temperature.Clear spin accumulation signals are detected by the non-local measurement. By fitting the results to the one-dimensional diffusion equation,~8.6% spin polarization of the Co/Ag interface and ~180 nm spin diffusion length in Ag are obtained.Thermal treatment results show that the spin accumulation signal drastically decreases after 100℃ annealing, and disappears under 200℃ annealing. Our results demonstrate that, compared to the spin diffusion length, the decrease and the disappearance of the spin accumulation signal are mainly dominated by the variation of the interfacial spin polarization of the Co/Ag interface.     

Effects of Ni buffer layer on giant magnetoresistance in Co/Cu/Co sandwich

In order to increase the sensitivity of Co/Cu/Co sandwiches, different thickness Ni layers were used as buffer layer. It was found that in the Co 55 Å/Cu 35 Å/Co 55 Å sandwiches with different thickness Ni buffer layers, MR ratios between 3.5% and 5.6% could be obtained, and the coercive forces were about 12 Oe. Hence, the maximum field sensitivity could be enhanced to about 1%/Oe. Further investigation from the results of atomic force microscopy showed the improvement of the interfacial flatness in the sandwiches with Ni buffer layer. The microstructure observed by high-resolution electron microscope demonstrated the different structure of the two Co layers in the Ni buffered sandwich, which directly determined the small saturation field of the sandwich. This was confirmed by the magnetic behaviors of the two Co layers calculated from the experimental hysteresis loops. All these showed that the usage of a Ni buffer layer could result in interfacial improvement, different crystalline structure, and small saturation field in the Co/Cu/Co sandwich. These enhanced the electron spin scattering at the Co–Cu interfaces and finally enlarged the giant magnetoresistance and the sensitivity in the sandwich.     

不同过渡层上Co/Cu/Co三明治结构的巨磁电阻效应研究

通过对不同过渡层上Co(5.5nm)/Cu(3.5nm)/Co(5.5nm)三明治结构的研究,发现过渡层的磁性及过渡层诱导的三明治晶格结构对材料的巨磁电阻效应有重要影响.反铁磁Cr过渡层由于和相邻铁磁Co层之间存在着反铁磁耦合,可以获得6％以上的巨磁电阻值,但它同时使材料的矫顽力较大,因此磁灵敏度不高.Ni和Ti过渡层上Co/Cu/Co三明治结构,由于形成了强的（111）织构,其巨磁电阻值也达到5％以上.磁性材料Ni过度层还使三明治结构材料的矫顽力大为下降,从而显著提高了材料的磁灵敏度. 关键词：     

Aluminum thickness dependence of resistance change in spin tunneling junctions Co/Al-oxide/Co

The oxidation states of Al-oxide layer and the leakage current density in coercive differential spin tunneling junctions Co/Al-oxide/Co have been investigated in order to clear the mechanism of the increasing resistance change. X-ray photoelectron spectroscopy analysis shows that the resistance change increases with decreasing unoxidized Al, which can be qualitatively explained by using first-principle band calculation based on linear-muffin-tin-orbital atomic-sphere-approximation method. The resistance change decreases with increasing leakage current density, which originates from Schottky effect. Reduction of unoxidized Al and leakage current density originating from Schottky effect is required to obtain the large resistance change in spin tunneling junctions.     

Magnetism of Co layers in a Co/Si multilayer film

The magnetic properties of Co/Si multilayer films produced through rf ion sputtering were studied in the temperature range 4.2–300 K. The dependences of the spontaneous magnetization and hysteresis characteristics of the films on the thicknesses of the magnetic layers and nonmagnetic spacers are established. It is shown that these dependences are determined to a large extent by interlayer interfaces, in which the effective magnetic moment of the Co atoms and the exchange interaction decrease and magnetic-anisotropy dispersion arises. A probable cause of the interface formation is interlayer mixing (which is estimated to penetrate to a depth of 15 Å) and the strong effect of Si on the Co electronic structure.     

Co/Cu92Mn8/Co结构中的低场巨磁电阻研究

对三明治结构的Co/Cu/Co和Co/Cu₉₂Mn₈/Co系列的巨磁电阻效应进行了研究,发现两者的巨磁电阻均随中介层厚度作周期性振荡,但是接近反相.作为与Co/Cu/Co系统的比较,发现若在Cu基中稀释Mn原子,巨磁电阻随外磁场变化的曲线会有非常大的改变,同时饱和场或开关场也有较大的下降,这意味着有可能为Co/Cu金属多层膜的巨磁电阻的实用化研究开辟出一条新的思路. 关键词：