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1.
2.
The surface electronic state on the stepped surface of Cu(755) has been investigated by means of angle-resolved ultraviolet photoelectron spectroscopy using synchrotron radiation(SR-ARUPS). We have observed a free-electron-like surface state below the Fermi level. In spite of the anisotropy of the atomic arrangement due to steps, the surface state is shown to be isotropic since the dispersion profile and the peak shape are almost identical in the directions parallel and perpendicular to the steps. This result makes a clear contrast with the previous SR-ARUPS results on Ni(755) surfaces which have the surface structure similar to Cu(755). Those experimental evidences are discussed based upon the electron configurations of both metal substrates.  相似文献   

3.
The removal of the native oxides from the In0.53Ga0.47As surface by exposure to atomic hydrogen has been investigated by highly surface sensitive synchrotron radiation based photoelectron spectroscopy. This shows that it is possible to fully remove the arsenic oxides at low temperatures, while still leaving a low concentration of stable Ga2O and In2O at the surface, and no evidence of indium loss from the substrate. The removal of surface carbon contamination is also seen, however full removal is only detected in the absence of prior substrate annealing. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

4.
Synchrotron radiation time structure is becoming a common tool for studying dynamic properties of materials. The main limitation is often the wide time domain the user would like to access with pump–probe experiments. In order to perform photoelectron spectroscopy experiments over time scales from milliseconds to picoseconds it is mandatory to measure the time at which each measured photoelectron was created. For this reason the usual CCD camera‐based two‐dimensional detection of electron energy analyzers has been replaced by a new delay‐line detector adapted to the time structure of the SOLEIL synchrotron radiation source. The new two‐dimensional delay‐line detector has a time resolution of 5 ns and was installed on a Scienta SES 2002 electron energy analyzer. The first application has been to characterize the time of flight of the photoemitted electrons as a function of their kinetic energy and the selected pass energy. By repeating the experiment as a function of the available pass energy and of the kinetic energy, a complete characterization of the analyzer behaviour in the time domain has been obtained. Even for kinetic energies as low as 10 eV at 2 eV pass energy, the time spread of the detected electrons is lower than 140 ns. These results and the time structure of the SOLEIL filling modes assure the possibility of performing pump–probe photoelectron spectroscopy experiments with the time resolution given by the SOLEIL pulse width, the best performance of the beamline and of the experimental station.  相似文献   

5.
Cho GC  Han PY  Zhang XC  Bakker HJ 《Optics letters》2000,25(21):1609-1611
We investigate the reflection near the reststrahlen band of the optical phonon in bulk GaAs in the time domain, using time-resolved terahertz spectroscopy. We find that the dynamics of the reflection measured for GaAs differs strongly from the reflection dynamics that would be expected for a TO phonon with a frequency-independent dephasing time.  相似文献   

6.
The energy dependence of electron inelastic scattering mean-free-paths (mfp's) has been measured for thin films of Au, Ag and Mg for energies up to 150 eV by the overlayer method using synchrotron radiation photoemission. After the initial sharp drop in mfp at low energies (not seen in our data for Mg) mfp's for all three materials remain almost constant over the remaining range of kinetic energy. Some of the essentials of this technique are discussed; in particular the choice of substrate material, overlayer growth mechanisms and geometry of electron spectrometer are considered in detail. Increases in the metal-related 2p emission on oxidation of films of Mg and Al indicate that the mfp in the oxides is typically at least twice as great as in the metal and this ratio is energy-dependent. The dangers of using the “universal curve” of mfp versus energy are highlighted by this work.  相似文献   

7.
The ultrafast dynamics of o-fluorophenol via the excited states has been studied by femtosecond time-resolved photoelectron imaging. The photoion and photoelectron spectra taken with a time delay between 267 nm pump laser and 800 nm probe laser provide a longer-lived S1 electronic state of about ns timescale. In comparison,the spectra obtained by exciting the S2 state with femtosecond laser pulses at 400 nm and ionizing with pulses at 800 nm suggest that the S2 state has an ultrashort lifetime about 102 fs and reflects the internal conversion dynamics of the S2 state to the S1 state.  相似文献   

8.
Doping with transition metal ions in TiO2 has been found effective to modify the electronic structure of TiO2 nanoparticles. Application of synchrotron radiation photoelectron spectroscopy (SRPES) to Nd-doped TiO2 nanoparticles revealed that there existed different peak positions and structure with different doping concentration in the valence band spectra. From the onset of valence band spectrum, it was observed that doping Nd ions alters the electronic structure and makes the band gap of TiO2 narrow.  相似文献   

9.
Angle-resolved photoemission measurements have been performed on the (110) face of a VC0.80 single crystal using resonance radiation. A vacancy-induced peak is identified at about 1.7 eV below the Fermi energy. Comparison of the experimental peak dispersions with direct transitions between energy bands of VC1.0 is also made.  相似文献   

10.
《Surface science》1986,172(1):174-182
The room temperature adsorption of CF3COOH, CH3COOH and CO on cleaved GaAs(110) surfaces has been studied by vibrational electron energy loss spectroscopy (HRELS), second derivative electron energy spectroscopy (ELS) and electron diffraction (LEED). CO does not adsorb on the GaAs surfaces in measurable quantities. Acetic acid CH3COOH is dissociatively adsorbed as an acetate bonded to Ga surface atoms with the split-off hydrogen on As surface atoms. The fluorated acid CF3COOH decomposes via an acetate intermediate CF3COO into active CF3 groups which adsorb on Ga surface atoms. The split-off hydrogen sticks to surface As atoms while the generated CO2 desorbs. The adsorption models are consistent with the LEED c(2×2) superstructure observed after saturated adsorption of both acids.  相似文献   

11.
Time-resolved two-photon photoelectron spectra have been measured for free Pt( -)(3) using femtosecond pulses of 1.5 eV photon energy in a pump-probe configuration. The time-dependent photoelectron distribution reveals a lifetime of optically excited states of less than 70 fs. Such an unexpected fast electron relaxation in Pt( -)(3) suggests the existence of inelastic electron-electron scattering processes in a triatomic cluster which result in a lifetime similar to those of bulk metals.  相似文献   

12.
13.
异质结结构界面的能带带阶是一个非常重要的参数,该参数的精确确定直接影响异质结的光电性质研究以及异质结在光电器件上的应用.利用同步辐射光电子能谱技术测量了ZnO/PbTe异质结结构的能带带阶.测量得到该异质结价带带阶为2.56 eV,导带带阶为0.49 eV,是一个典型的类型I的能带排列.利用变厚度扫描的测量方法发现,ZnO/PbTe界面存在两种键,分别是Pb—O键(低结合能)和Pb—Te键(高结合能).在ZnO/PbTe异质结界面的能带排列中导带带阶较小,而价带带阶较大,这一能带结构有利于PbTe中的激发电子输运到ZnO导电层中.该类结构在新型太阳电池、中红外探测器、激光器等器件中具有潜在的应用价值.  相似文献   

14.
Electronic properties and chemical composition of Ge films grown by molecular beam epitaxy on GaAs (110) surfaces were studied in situ by electron energy-loss spectroscopy. The loss peaks involving core-level excitations proved that As atoms segregate at the surface of the growing film. The well known 20 eV loss peak of the clean GaAs (110) surface, being attributed to transitions from Ga(3d) to Frenkel-type excitons of dangling-bond surface states, was found to persist, slightly shifted to 19.7 eV, with the growing Ge (110) film. Since the Ga coverage amounts to below approximately 0.05 of a monolayer this transition seems to contain a strong intraatom contribution.  相似文献   

15.
The surface structure and electronic properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and spin-resolved photoelectron spectroscopy. The spin polarization at the Fermi level (EF) of the Fe(110) film decreases sharply with increasing thickness of the MgO layer. This behavior arises from the formation of a thin FeO layer at the MgO(111)/Fe(110) interface, as revealed by structural and spectroscopic investigations. The strong attenuation of the intrinsic spin polarization is qualitatively attributed to the scattering of spin-polarized electrons at the unoccupied d-orbitals of Fe2+. PACS 68.35.-p; 68.55.-a; 73.20.r; 75.70.Cn; 79.60.-I  相似文献   

16.
A new experimental setup for photoelectron spectroscopy of size-selected cluster ions using synchrotron VUV radiation as generated by the Swiss Light Source is presented. An intense positively charged cluster ion beam is produced in a high-intensity magnetron sputter source. The clusters are subsequently mass selected in a sector magnet. To maximize the residence time of the cluster ions in the ionization region of the velocity map imaging spectrometer, the cluster ion beam is decelerated where it crosses the light beam. First experiments on (MoO3) n + (n = 69 and 59) cluster cations show that the approach is capable of delivering photoelectron spectra of size-selected transition metal cluster ions.  相似文献   

17.
Initial oxidation of HF-acid treated Si(1 0 0) surfaces with air exposure has been studied by using synchrotron radiation X-ray photoelectron spectroscopy. We demonstrate that the initial oxidation is explained not by a layer-by-layer process, but by a non-uniform mechanism. Just after dipping a Si substrate in HF-acid and spin-drying, the Si surface is immediately oxidized partly with a coverage of 0.2. It is considered that the non-uniform oxidation takes place at surface defects on H passivated Si surfaces. With increasing the air exposure up to 1 week, we have found that the non-oxidized part is oxidized uniformly at slower rates compared to the beginning. IR absorption spectroscopy with a multiple-internal-reflection geometry clearly indicates the backbond oxidation of surface Si takes place despite the H passivation produced by the HF-acid treatment.  相似文献   

18.
Photoelectron asymmetry parameters (β) and partial photoionization cross-sections have been measured for ionization from the molecular orbitals of CH3F and CH3Cl using synchrotron radiation in the photon energy range 19 to 115 eV. Cooper minima are observed in the β spectra of CH3C1 for ionization from orbitals with Cl 3p character. Several shake-up bands observed in the F 2s and Cl 38 ionization energy region indicate a breakdown of the one-electron picture of ionization. The position and relative intensities of the satellite bands are compared with the results of Green's function calculations.  相似文献   

19.
Using angle resolved UV photoelectron spectroscopy, coupled with the continuum of polarized light available with synchrotron radiation, we make an interpretation of the photoelectron spectrum of CO adsorbed on Cu(100). We point out that the bonding of CO on Cu as observed by photoemission is considerably different from the bonding of CO on Ni. These differences do not seem to be caused by bonding orientation differences, however, as the CO molecular axis is found to be very close to the surface normal, as was the case for CO on Ni(100). No evidence is found for a second phase of CO on Cu(100).  相似文献   

20.
The energy band structure with type-I alignment at the PbTe/CdTe(111) heterojunction interface is determined by the ultraviolet photoelectron spectrum using synchrotron radiation.The valence band and conduction band offsets are obtained to be 0.09±0.12 and 1.19±0.12 eV,respectively.These results are in agreement with theoretically predicted ones.The accurate determination of the valence band and conduction band offsets is useful for the fundamental understanding of the mid-infrared light emission from the PbTe/CdTe heterostructures and its application in devices.  相似文献   

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