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1.
The chemical potential of electrons in a strong magnetic field is investigated. It is shown that the magnetic field has only a slight effect on electron chemical potential when B 〈 10^11 T, but electron chemical potential will decrease greatly when B 〉 10^11 T. The effects of a strong magnetic field on electron capture rates for ^60Fe are discussed, and the result shows that the electron capture sharply decreases because of the strong magnetic field. 相似文献
2.
Magnetically confined argon plasma produced by hollow cathode arc discharge has been studied in different experimental conditions, with discharge current from 10–50 A, vessel argon pressure between 10–3 and 10–4 torr (1 torr=133·32 Pa) and axial magnetic field up to 0·12 T. The plasma density measured by a cylindrical Langmuir probe is found to be 1019 to 4 × 1019 m–3 and the electron temperatureT
e varies between 2·5 and 4·8 eV. When an external axial magnetic field is applied the plasma temperature decreases with the increase in the magnetic field intensity until it reaches a minimum value at 0·075T and then increases with the same rate. This has been interpreted as high frequency waves excitation due to electron beam-plasma interaction, which explains the electron density jumps with the magnetic field intensity. Enhanced plasma transport across the magnetic field is studied and classified as anomalous diffusion. 相似文献
3.
D. Yu. Ivanov S. V. Morozov Yu. V. Dubrovskii S. Yu. Shapoval V. V. Valyaev V. L. Gurtovoi 《JETP Letters》1997,66(11):737-741
The Hall mobility of electrons is investigated as a function of the population of size-quantization subbands in the two-dimensional
electron gas of a δ-doped layer in GaAs with constant total electron density N
s
=3.2×1012 cm−2 (three initially filled subbands) at T=4.2 K. The population of the subbands is varied by diamagnetic “ejection” of size-quantization levels (i.e., pushing them
over the Fermi level) by a magnetic field oriented parallel to the plane of the δ-doped layer. The measurements are made in magnetic fields making small angles (5°) with the plane of the doping. The magnetic
field component normal to the plane was used to measure the Hall mobility and density. It is found that the measured Hall
mobility as a function of the ejecting magnetic field has a distinct maximum. This maximum is due to an increase in the electron
mobility in the first subband (the ground subband is assigned the index 0) and electron redistribution between subbands with
in increasing ejecting magnetic field parallel to the plane of the δ layer.
Pis’ma Zh. éksp. Teor. Fiz. 66, No. 11, 704–708 (10 December 1997) 相似文献
4.
The retardation of the recombination of electrons and holes in semiconductors in an applied uniform magnetic field has been
predicted. It has been shown that the recombination time in germanium in the temperature range of T = 1–10 K at charge carrier densities of n
e
= 1010−1014 cm−3 in magnetic fields of B = 3 × 102−3 × 104 G can be more than two orders of magnitude larger than that at zero magnetic field. This means that, after creation of nonequilibrium
charge carriers by their injection at the p-n junction owing to some radiation sources or fast electron irradiation, the semiconductor retains its conductivity for a much
longer time at nonzero applied magnetic field. The effect under study can be used, for example, to detect radiation sources. 相似文献
5.
The formation and decay kinetics of chain linked triplet radical pairs derived from photo-induced electron transfer reactions in a series of 21 zinc porphyrin-flexible spacer-viologen (ZnP-Sp n -Vi2+) dyads containing 2–138 atoms (n) in the spacer, have been examined by nanosecond laser flash photolysis techniques in an external magnetic field. In non-viscous polar solvents (acetone and CHCl3 plus CH3OH = 1:1 v/v), the effect of the spacer length on the rate constant of forward electron transfer can be described by the equation: k et = k 0 et(n + 6)?1.5, with k 0 et = 3 × 1010 s?1 and 1.2 × 1010 s?1 for electron transfer from the singlet and triplet states of ZnP, respectively. In zero magnetic field, the value of the triplet radical pair recombination rate constant, k r(0) = 0.7 × 106-8 × 106 s?1, is significantly smaller than k et. The dependence of k r(0) on n has an extremum with the maximum near n = 20. In a strong magnetic field (B = 0.21 T), significant retardation of triplet radical pair recombination is observed. In strong magnetic fields the effect of the chain length on triplet radical pair recombination rates is rather small and k r(B) may vary in the range 0.3 × 106-1 × 107 s?1. The phenomena observed are discussed in terms of the interplay of molecular and spin dynamics in the limits of slow and fast encounters, taking into account the exchange-interaction. 相似文献
6.
The hydrogen abstraction reaction of triplet 4-methoxybenzophenone with thiophenol at 265 K has been studied with a newly developed picosecond laser flash photolysis apparatus under magnetic fields of 0–1.7 T. The decay rate constant of the radical pair generated was found to increase from 3.42 × 109 s?1 to 4.15 × 109 s?1 with increasing the magnetic field from 0 to 1.7 T. The observed magnetic field effects can be explained by the Δg mechanism. Using the simple kinetics model with the Δg mechanism, the rate constant of the escape process from the pair (k esc) and two rate constants for the T-S spin conversion process (k T-S) at 0 and 1.7 T were found to be 1.97 × 109 s?1, 1.45 × 109 s?1, and 2.12 × 109 s?1, respectively. From the magnetic field dependence on k T-S, the difference in the g values of the 4-methoxybenzophenone ketyl and phenylthiyl radicals was estimated to be 0.0087. 相似文献
7.
H. Himura H. Wakabayashi Y. Yamamoto A. Sanpei S. Masamune M. Isobe S. Okamura K. Matsuoka 《Hyperfine Interactions》2007,174(1-3):83-88
Experimental studies on nonneutral (pure electron) plasmas of finite temperature, trapped in helical closed magnetic surfaces
have been conducted. The helical electron plasmas are produced with thermal electrons launched from the outside of the last
closed flux surface (LCFS). About 150 μs after the electron injection, the plasmas reach equilibrium state. Around the LCFS, a steep gradient of plasma space potential
φ
s
is formed. The corresponding radial electric field is about 2.5 kV/m. On the other hand, around the magnetic axis of helical
magnetic surfaces, φ
s
is almost constant, indicating that there are little electrons there. The volume-averaged electron density is on the order
of 1013 m–3, smaller than the Brillouin density limit. The confinement time seems to be limited by a disruptive instability, and is so
far about 1.5 ms.
相似文献
8.
The nonrelativistic and relativistic energy eigenvalues of the electron in the inhomogeneous magnetic fieldH
z
=Hr
−1,r=(x
2 +y
2)1/2 are derived in a form displaying the explicit spin dependence. The possibility of magnetic hydrogen atom formation and the
spontaneouse
+
e
− pair creation following from these eigenvalues is mentioned. The expressions for pressure, energy, particle number and magnetic
moment of an electron gas in this IMF are calculated in the degenerate limit. The possibility of spontaneous magnetisation,i.e., ferromagnetic behaviour, is established. Further, the pressure of the electron gas in the same type of fields is an order
of magnitude higher than those in a homogeneous magnetic field and crossed homogeneous electric and magnetic fields for comparable
field strengths. 相似文献
9.
A. V. Voitsekhovskii V. V. Vasil’ev D. V. Grigor’ev I. V. Romanov 《Russian Physics Journal》2009,52(5):441-447
The process of reconstuction of the distribution profile of hole concentration in the p
+–n structure by the method of differential Hall measurements upon implantation of ions As+ (Е = 190 keV, D = 3.1014 cm-2, j = 0.025 μA/cm2) into epitaxial films Cd
x
Hg1–x
Te for x ~ 0.2, with the initial electron concentration and mobility n = 1014 cm-3 and μ = 2∙105 cm2∙V–1∙s–1 is numerically simulated. The dependences of degree of reconstruction of the hole-concentration distribution profile on the
depth of a shunting n-layer and magnitude of the magnetic field, at which the electrophysical parameters of the p
+–n structure are measured, are calculated. The dependence of the limiting magnetic field determining the magnetic-field range
for measurements on the n-layer depth is found. It is shown that in calculations one should use the conduction values measured
at the same magnetic fields as the Hall coefficients for determination of the holeconcentration distribution profile using
the Petritz model. 相似文献
10.
The dependences of the electrical resistivity ρ and the Hall coefficient R on the magnetic field have been measured for single-crystal samples of the n-Bi0.93Sb0.07 semiconductor alloys with electron concentrations in the range 1 × 1016 cm−3 < n < 2 × 1018 cm−3. It has been found that the measured dependences exhibit Shubnikov-de Haas quantum oscillations. The magnetic fields corresponding
to the maxima of the quantum oscillations of the electrical resistivity are in good agreement with the calculated values of
the magnetic fields in which the Landau quantum level with the number N intersects the Fermi level. The quantum oscillations of the Hall coefficient with small numbers are characterized by a significant
spin splitting. In a magnetic field directed along the trigonal axis, the quantum oscillations of the resistivity ρ and the
Hall coefficient R are associated with electrons of the three-valley semiconductor and are in phase with the magnetic field. In the case of
a magnetic field directed parallel to the binary axis, the quantum oscillations associated both with electrons of the secondary
ellipsoids in weaker magnetic fields and with electrons of the main ellipsoid in strong magnetic fields (after the overflow
of electrons from the secondary ellipsoids to the main ellipsoid) are also in phase. In magnetic fields of the quantum limit
ħω
c
/2 ≥ E
F, the electrical conductivity increases with an increase in the magnetic field: σ22(H) ∼ H
k
. A theoretical evaluation of the exponent in this expression for a nonparabolic semiconductor leads to values of k close to the experimental values in the range 4 ≤ k ≤ 4.6, which were obtained for samples of the semiconductor alloys with different electron concentrations. A further increase
in the magnetic field results in a decrease of the exponent k and in the transition to the inequality σ22(H) ≤ σ21(H). 相似文献
11.
An experimental determination has been made of electron self-exchange rates between the radical anions of 1,2-, 1,3- and 1,4-dicyanobenzene (DCB) and the respective neutral molecules applying steady-state field-modulated MARY (magnetic field effect on reaction yield) spectroscopy. For the first time this has been achieved successfully for compounds whose self-exchange rate constants can be obtained independently by alternative methods such as EPR linebroadening. In this study, pyrene was used as an electron donor to generate the spin-correlated radical ion pair (pyrene·+ DCB·?) essential for MARY spectroscopy. The radical ion pair is in equilibrium with an exciplex whose magnetic field affected fluorescence was recorded as a function of the magnetic field to yield the MARY spectrum. Due to lifetime uncertainty energy broadening of spin levels caused by electron self-exchange, the characteristic B 1/2 value increases with the concentration of DCB in the sample. The rate constant of self-exchange was obtained from the slope of the linear part in the plot of B1/2 versus DCB concentration. The values range between 6 x 108 M?1 s?1 and 1.4 x 1010 M?1 s?1, depending on the DCB isomer and solvent. Comparison with literature data from EPR linebroadening measurements shows good agreement. 相似文献
12.
Various approaches to computing the energies of the ground state and excited levels of the hydrogen atom in an ultrastrong
magnetic field B that considerably exceeds the field B
a
= m
e
2
e
3
c/ħ
3 ∼ 109 G are considered. The effects of polarization of vacuum and anomalous magnetic moment of the electron on the position of
the atomic levels are discussed. The vacuum polarization effects are negligibly weak for B < 1015 G but become significant in fields B ≫ 1016 G, in which these effects qualitatively modify the atomic spectrum in this range. The difference in the behaviors of the
even and odd energy levels for B ≫ B
a
is analyzed and the formulas for the energies of odd levels as a function of field B are refined. 相似文献
13.
This paper investigates the photodetachment of the negative hydrogen ion H near an elastic wall in a magnetic field.The magnetic field confines the perpendicular motion of the electron,which results in a real three-dimensional well for the detached electron.The analytical formulas for the cross section of the photodetachment in the threedimensional quantum well are derived based on both the quantum approach and closed-orbit theory.The magnetic field and the elastic surface lead to two completely different modulations to the cross section of the photodetachment.The oscillation amplitude depends on the strength of the magnetic field,the ion-wall distance and the photon polarization as well.Specially,for the circularly polarized photon-induced photodetachment,the cross sections display a suppressed(E E th) 1/2 threshold law with energy E in the vicinity above Landau energy E th,contrasting with the(E E th) 1/2 threshold law in the presence of only the magnetic field.The semiclassical calculation fits the quantum result quite well,although there are still small deviations.The difference is attributed to the failure of semiclassical mechanics. 相似文献
14.
Using a full configuration-interaction method with Hylleraas-Gaussian basis function, this paper investigates the 110+, 11(–1)+ and 11(–2)+ states of the hydrogen negative ion in strong magnetic fields. The total energies, electron detachment energies and derivatives of the total energy with respect to the magnetic field are presented as functions of magnetic field over a wide range of field strengths. Compared with the available theoretical data, the accuracy for the energies is enhanced significantly. The field regimes 3 < γ < 4 and 0.02 < γ < 0.05, in which the 11(–1)+ and 11(–2)+ states start to become bound, respectively, are also determined based on the calculated electron detachment energies. 相似文献
15.
We have obtained population inversion of a system of polarized (P=80%) electron spins in a solid during a very fast (dB
z
dt=4·105
T·s
–1) reversal of the external magnetic field. The electrons were trapped at oxygen vacancies in CaO single crystals. This method, whch does not exploit any high frequency electromagnetic field, has been for the first time successfully used to achieve an inverted state of electron spins in a solid. The negative temperature of an electron spin ensembleT=–23 mK has been obtained. 相似文献
16.
V. V. Skobelev 《Journal of Experimental and Theoretical Physics》2011,113(5):791-797
The Fermi energy, pressure, internal energy, entropy, and heat capacity of completely degenerate relativistic electron gas
are calculated by numerical methods. It is shown that the maximum admissible magnetic field on the order of 109 G in white dwarfs increases the pressure by a factor of 1.06 in the central region, where the electron concentration is ∼1033 cm−3, while the equilibrium radius increases by approximately a factor of 1.03, which obviously cannot be observed experimentally.
A magnetic field of ∼108 G or lower has no effect on the pressure and other thermodynamic functions. It is also shown that the contribution of degenerate
electron gas to the total pressure in neutron stars is negligible compared to that of neutron gas even in magnetic fields
with a maximum induction ∼1017 G possible in neutron stars. The neutron beta-decay forbiddeness conditions in a superstrong magnetic field are formulated.
It is assumed that small neutron stars have such magnetic fields and that pulsars with small periods are the most probable
objects that can have super-strong magnetic fields. 相似文献
17.
We used the spin-Hamiltonian method for the analysis of the electron paramagnetic resonance (EPR) spectrum of Fe3+ as a probe ion in (NH4)2AlF5·H2O single crystalline basic material. The theoretical expressions for the magnetic field (at which the fine structure transition lines appear) versus the angle between the magnetic field and the axis of symmetry of the magnetic complex are also given. These values were calculated by applying the perturbation theory to the second-order terms. From the experimental results (at 300 K and 9.21 GHz), the spin-Hamiltonian parameters were deduced:D=(668±10)·10−4 T,E=(−56±10)·10−4 T,a=(−54±10)·10−4 T,F=(30±10)·10−4 T. An isotropic superhyperfine structure was evidenced for the five fluorine ions. The obtained EPR data were used to determine the local symmetry of the Al3+ ion. A good agreement with X-ray diffraction measurements was found. 相似文献
18.
19.
V. P. Dyakonov R. Szymczak A. D. Prokhorov E. Zubov A. A. Prokhorov G. Petrakovskii L. Bezmaternikh M. Berkowski V. Varyukhin H. Szymczak 《The European Physical Journal B - Condensed Matter and Complex Systems》2010,78(3):291-298
Magnetic and electron paramagnetic resonance (EPR) properties of
EuFe3(BO3)4 single crystals have been studied over the
temperature range of 300–4.2 K and in a magnetic field up to 5 T. The
temperature, field and orientation dependences of susceptibility,
magnetization and EPR spectra are presented. An antiferromagnetic ordering
of the Fe subsystem occurs at about 37 K. The easy direction of
magnetization perpendicular to the c axis is determined by magnetic
measurements. Below 10 K, we observe an increase of susceptibility connected
with the polarization of the Eu sublattice by an effective exchange field of
the ordered Fe magnetic subsystem. In a magnetic field perpendicular to the
c axis, we have observed an increase of magnetization at T < 10 K in the
applied magnetic field, which can be attributed to the appearance of the
magnetic moment induced by the magnetic field applied in the basal plane.
According to EPR measurements, the distance between the maximum and minimum
of derivative of absorption line of the Lorentz type is equal to 319 Gs. The
anisotropy of g-factor and linewidth is due to the influence of crystalline
field of trigonal symmetry. The peculiarities of temperature dependence of
both intensity and linewidth are caused by the influence of excited states
of europium ion (Eu3+). It is supposed that the difference between the
g-factors from EPR and the magnetic measurements is caused by exchange
interaction between rare earth and Fe subsystems via anomalous Zeeman
effect. 相似文献
20.
本文在处理InAs单电子量子点哈密顿模型时,将自旋-轨道(SO)相互作用作为微扰项,计算在Fock-Darwin本征函数下SO相互作用的矩阵元,利用其对能级和波函数的二阶修正,并且考虑新的能级对g因子和有效质量m*的影响,计算得到在声子协助下电子的自旋弛豫率Γ的表达式.给出了InAs量子点中声子协助的电子自旋弛豫率Γ对于限制势频率ω0、温度T、纵向高度z0关键词:
自旋弛豫率
自旋-轨道(SO)相互作用
InAs量子点
Fock-Darwin本征函数 相似文献