Self-aligned Coupled Waveguide Distributed Bragg Reflector Lasers

A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a～80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.     

Tunable DBR Lasers Fabricated by Selective Area Growth Technique

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Tunable DBR Lasers Fabricated by Selective Area Growth Technique

The tunable ridge waveguide distributed Brag g reflector (DBR) lasers grown by selective area growth and designed for WDM communication systems at 1.55 μm is reported. The threshold of DBR lasers is 62 mA and the output power is more than 8 mW; the isolation resistance between the active region and Bragg region is 30 kΩ; the tuning range is 6.5 nm which can provide 6 WDM channels with a 100 GHz spacing; in thetuning range, the single mode suppression ratio (SMSR) is more than 32 dB and the output power variation of different wavelengths is less than 3 dB.     

高温稳定25 Gbit/s 850 nm垂直腔面发射激光器

通过在N型分布布拉格反射镜(DBR)中采用高热导率AlAs材料,且增加AlAs层所占的厚度比例,在保持DBR反射率基本不变的情况下,大幅度增加了N型DBR的热导率,提高了器件高温工作性能。制作了氧化限制型顶发射VCSEL器件,不同温度条件下的直流测试结果表明:25℃时热反转功率超过8 mW;85℃时热反转电流为11 mA,功率达5 mW,表现出较好的高温工作特性。远场发散角小于17°。0～70℃的温度条件下眼图都较清晰,表明器件满足高温25 Gbit/s工作要求。     

Pump-Induced Lasing Wavelength Shift in Er/Yb Codoped Fiber Grating Lasers

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Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator with organic–inorganic distributed Bragg reflector

We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic–inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF_x/TiO_xlayers, fabricated by room-temperature ion beam sputtering on the rear side of the device. The reflectivity of the mirror approaches 98% in the infrared spectral region and is centered at then = 1 exciton resonance of the MQW. ON–OFF driving reverse voltages of 0.5 and 1.8 V are measured at room temperature. In this range the static response of the device is linear so that it can be used for analog electro-optic modulation.     

单频窄线宽分布布拉格反射光纤激光器研究

分析了单频窄线宽分布布拉格反射（DBR）光纤激光器的单模工作条件,在此基础上算出单模工作区域,制作了一个单频窄线宽分布布拉格反射光纤激光器。该激光器在波长为975.5nm的半导体激光器抽动下,在1556.91nm波长处。当抽运功率为55.35mW时输出功率可达1.43mW,频宽小于1.2MHz(受测量仪器分辨率限制）。经测量,该输出激光是稳定的单纵模输出。     

1064nm超短腔DBR单频掺镱硅酸盐光纤激光器

提出了一种基于高掺杂硅酸盐增益光纤、输出波长为1 064nm的超短腔单频光纤激光器.该单频光纤激光器采用分布布拉格反射式腔型结构,有效腔长为2cm,其增益介质为1.1cm长的高浓度掺Yb3+光纤.通过恰当的温度控制,获得了线宽为4.8kHz的稳定单频激光输出.当注入泵浦光为378mW时,输出功率为13mW,斜效率为3.4%.在频率大于1 MHz时,测得该光纤激光器的相对噪声强度值约为-132dB/Hz.采用主振荡功率放大结构,对该单频光纤激光器的输出功率进行放大.当放大增益光纤长度选取为56cm时,得到了325mW的最大输出功率,其斜效率为52.8%.     

Frequency Doubling of a Laser Diode Using a Domain-Inverted LiTaO3Waveguide with a Monolithic Bragg Reflector

We report wavelength stabilization of a laser diode using a highly efficient distributed Bragg reflector (DBR) grating formed on a LiTaO₃ quasi-phase-matched second harmonic generation (QPM-SHG) device. Fabricating the second-order DBR on the LiTaO₃ waveguide, the reflectivity of 90% and FWHM wavelength bandwidth of 0.2 nm were obtained. By stabilizing the oscillation wavelength of the laser diode, 3.1 mW of blue light was generated in the QPM-SHG device with the monolithic grating.     

Wavelength Tuning in the Two-Section Distributed Bragg Reflector Laser Fabricatedby Quantum-Well Intermixing

The two-section tunable ridge waveguide distributed Bragg reflector (DBR) lasers fabricated by strained InxGa1-xAsyP1-y. The threshold current of the laser is 51mA. The tunable range of the laser is 3.2nm and the side mode suppression ratio (SMSR) is more 38dB.     

Vertical－cavity Surface－emitting Lasers Fabricated Twice by Implantation Using TungstenWireasMaskandZincDiffusion

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Single-frequency, single-polarization ytterbium-doped fiber laser by self-injection locking

We demonstrated a stable single-frequency, single-polarization operation of ytterbium-doped fiber laser. As a novel practical method to realize single-polarization operation of fiber distributed Bragg reflector (DBR)laser, we proposed self-injection locking (SIL) with an active fiber ring feedback cavity. The laser has high output power exceeding 15 mW, wavelength of 1053.20 nm, and side-mode suppression ratio greater than 60 dB. The SIL fiber laser shows the improvements in output power and side-mode suppression compared with the fiber DBR laser. No mode-hopping is observed within 2 hours.     

Oxide-apertured VCSEL with short period superlattice

Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS)used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1As (69.5 nm)/4.5-pair [GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward (111)A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100 ℃ and the threshold current increased slowly with the increase of temperature.     

AlGaInP visible quantum well lasers for information technology

650 nm-range AlGaInP multi-quantum well (MQW) laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) have been studied and the results are presented in this paper. Threshold current density of broad area contact laser diodes can be as low as 350 A/cm². Laser diodes with buried-ridge strip waveguide structures were made, threshold currents and differential efficiencies are (22–40) mA and (0.2–0.7) mW/mA, respectively. Typical output power for the laser diodes is 5 mW, maximum output power of 15 mW has been obtained. Their operation temperature can be up to 90°C under power of 5 mW. After operating under 90°C and 5 mW for 72 hrs, the average increments for the threshold currents of the lasers at 25°C and the operation currents at 5 mW (at 25°C) are (2–3) mA and (3–5) mA, respectively. Reliability tests showed that no obvious degradation was observed after 1400 hours of CW operation under 50°C and 2.5 mW. Presented at the 1st Czech-Chinese Workshop “Advanced Materials for Optoelectronics”, Prague, Czech Republic, June 13–17, 1998.     

Systematic study on the confinement structure design of 1.5-μm InGaAlAs/InP multiple-quantum-well lasers

An in-dept analysis on the separate confinement heterostructure (SCH) design parameters of 1.5-μm InGaAlAs/InP multiple quantum-well (MQW) lasers is reported. Theoretical calculations show a drastic enhancement on threshold current and slope efficiency from step-index SCH (STEP-SCH) to graded-index SCH (GRIN-SCH) design, but the effect ceases beyond a critical number of grading steps. This finding implies ease of the growth process and reduction in cost. The overall GRIN-SCH’s thickness is found to exert great influence over the achievable laser’s threshold current and slope efficiency. An average of 27 mA threshold current reduction and more than 32% of slope efficiency increment were achieved by optimizing the GRIN-SCH thickness. Increasing the grading energy range of the GRIN-SCH decreases the slope efficiency, but is found to effectively reduce carrier leakage at elevated temperature leading to a less temperature-sensitive threshold current MQW ridge lasers were fabricated and characterized out of two laser materials, one with a reference STEP-SCH and another with a proposed optimized GRIN-SCH profile. The laser with optimised SCH design has shown a 36% reduction in room temperature threshold current as compared to that with the STEP-SCH design, which is in good agreement to the theoretical simulation. In addition, a record high characteristic temperature (T ₀) of 105 K was obtained on the GRIN-SCH laser structure, which is more than three fold increment as compared to the STEP-SCH design.     

Vertical-cavity surface-emitting laser in the long-wavelength (700 nm) region in the visible by energy transfer between organic dyes

In this work, organic vertical-cavity surface-emitting lasers (VCSELs) with single-mode laser output in the long-wavelength region (~700 nm) of the visible were reported based on the energy transfer between dye pairs consisting of pyrromethene 597 (PM597) and rhodamine 700 (LD700). By co-doping PM597 into the polymeric hosts, the fluorescence intensity of LD700 was enhanced by 30-fold and the photophysical parameters of the donor–acceptor pairs were investigated, indicating the involvement of non-radiative resonance energy transfer processes between PM597 and LD700. Active distributed Bragg reflectors (DBR) were made by alternately spin-coating dye-doped polyvinylcarbazole and cellulose acetate thin films as the high and low refractive index layers, respectively. By sandwiching the active layer with 2 DBR mirrors, VCSEL emission at 698.9 nm in the biological first window (650–950 nm) was observed under the 532-nm laser pulses. The laser slope efficiency and threshold were also measured.     

Simulation and fabrication study of porous silicon photonic crystal

The present work reports design and fabrication of porous silicon based one-dimensional (1D) photonic crystal. Distributed Bragg reflector (DBR) is a 1D photonic crystal composed of multilayer stack of high and low refractive index layers. Design of porous silicon DBR is a complex one and requires appropriate control in optical parameters of its constituent layers. In order to design DBR, two porous silicon single layer samples were fabricated using current density of 10 and 50 mA/cm². Optical characterization of single layer samples showed series of interference fringes. Reflective interferometric Fourier transform spectroscopy (RIFTS) method was employed to determine optical constants of porous silicon single layers. DBR simulation was carried out based on transfer matrix method. DBR was then fabricated using optical parameters obtained from RIFTS method. Reflection bandwidth of prepared DBR was found to be 216 nm, which is comparable to the simulated value of 203 nm.     

亚毫安阈值的1.3μm垂直腔面发射激光器

设计并研制了室温连续工作的单模13 μm垂直腔面发射激光器（VCSEL）,阈值电流为051 mA,最高连续工作温度达到82℃,斜率效率为029 W/A.采用InAsP/InGaAsP应变补偿多量子阱作为有源增益区,由晶片直接键合技术融合InP基谐振腔和GaAs基GaAs/Al（Ga）As分布布拉格下反射腔镜,并由电子束蒸发法沉积SiO₂/TiO₂介质薄膜上反射腔镜形成13 μm VCSEL结构.讨论并分析了谐振腔模式与量子阱增益峰相对位置对器件性能的影响. 关键词： 垂直腔面发射激光器 晶片直接键合 应变补偿多量子阱     

用于POF的高性能共振腔发光二极管

提出用AlGaAs材料为n型下DBR,AlGaInP材料为p型上DBR,GaInP/AlGaInP多量子阱为有源区来制备650nm波长的共振腔发光二极管（RCLED）.用传输矩阵法对器件的结构进行了理论设计,并制备了RCLED和普通LED两种结构.测试结果表明,RCLED有更高的发光效率,是普通LED的近1.3倍,当注入电流从3mA增加到30mA时,RCLED的峰值波长只变化了1nm,而普通LED的波长则变化了7nm,且RCLED的光谱半宽窄,远场发散角小. 关键词： 发光二极管 共振腔 金属有机物化学气相淀积     

新型全方位反射铝镓铟磷薄膜发光二极管

提出了一种新型全方位反射铝镓铟磷(AlGaInP)薄膜发光二极管(LED)的结构和制作工艺，在这个结构里应用了低折射率的介质和高反射率的金属联合作为反光镜.用金锡合金(80Au20Sn，重量比)作为焊料把带有反光镜的AlGaInP LED外延片倒装键合到GaAs基板上(RS-LED)，去掉外延片GaAs衬底，把被GaAS衬底吸收的光反射出去.通过与常规AlGaInP 吸收衬底LEDs(AS-LED)和带有DBR的AlGaInP 吸收衬底LEDs(AS-LED(DBR))电、光特性的比较，证明新型全方位反射AlGaInP薄膜LED结构能极大提高亮度和效率.正向电流20mA时，RS-LED的光输出功率和流明效率分别是AS-LED的3.2倍和2.2倍，是AS-LED(DBR)的2倍和1.5倍.RS-LED(20mA下峰值波长627nm)的轴向光强达到194.3mcd，是AS-LED(20mA下峰值波长624nm)轴向光强的2.8倍，是AS-LED(DBR)(20mA下峰值波长623nm)轴向光强的1.6倍. 关键词： 铝镓铟磷 薄膜发光管 全方位反射镜 发光强度