共查询到19条相似文献,搜索用时 62 毫秒
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首先介绍了共振隧穿理论和一种新效应--介观压阻效应,对AlxGa1-xAs/GaAl/AlxGa1-xAs共振隧穿双势垒结构的轴向施加压应变作了分析,然后计算了轴向应变对垒宽和垒高的影响,对透射系数和隧穿电流用Matlab作了仿真.发现压应变可以使隧穿电流线性增加,偏压不同电流增加的速率也不同,为设计共振隧穿器件提供了理论依据. 相似文献
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提出了一种新的计算双量子阱结构中电子共振隧穿时间的相干模型,理论计算与报道的实验结果基本一致.进一步的讨论表明,在有电子散射的情况下,随着势垒厚度的增加,对比度存在极大值,而与类Fabry-Perot模型的单调增加趋势明显不同. 相似文献
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The room temperature current-voltage characteristics of InAs/AlSb/GaSb resonant interband tunneling diodes (RITDs), grown
by chemical beam epitaxy on GaAs substrates, are reported as a function of the InAs buffer layer thickness and different interface
configurations. The peak-to-valley current ratio (PVCR) improved from 1 to 12 as the buffer thickness was increased from 0
to 500 nm and the density of dislocations caused by the lattice mismatch of ∼7% decreased. No significant improvement was
seen for a buffer thickness beyond 500 nm. Dislocation-free RITDs, grown lattice-matched on InAs substrates, show PVCRs of
approximately 16. The InAs/AlSb Interfaces in these structures can be either InSb-like or AlAs-like and the interface can
have a very strong effect on the diode performance. Unlike the case in InAs/AlSb field effect transistor structures, an AlAs-like
interface results in better PVCRs in the diodes. Details of the results of this study are presented. 相似文献
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AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double-barrier resonant tunneling diodes(DBRTDs) grown on a semi-insulated GaAs substrate with molecular beam epitaxy is demonstrated.By sandwiching the In0.1Ga0.9As layer between GaAs layers,potential wells beside the two sides of barrier are deepened,resulting in an increase of the peak-to-valley current ratio (PVCR) and a peak current density.A special shape of collector is designed in order to reduce contact resistance and non-uniformity of the current;as a result the total current density in the device is increased.The use of thin barriers is also helpful for the improvement of the PVCR and the peak current density in DBRTDs.The devices exhibit a maximum PVCR of 13.98 and a peak current density of 89kA/cm2 at room temperature. 相似文献
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采用量子水动力学(QHD)模型模拟了35nm Si/Si1-xGex空穴型共振隧穿二极管(RTD)在室温下的I-V特性.模拟过程中,引入second upwind,Schafetter-Gummel(SG)和二阶中心差分法相结合的离散方法对方程组进行离散,保证了结果的收敛性.还模拟了不同的器件结构,对结果的分析表明器件的势垒厚度和载流子有效质量都会对RTD的负阻效应产生影响.在室温下(T=293K),当x=0.23时,模拟结果的峰谷电流比为1.14,与实验结果相吻合. 相似文献
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在温度为0.3~4.2K,磁场强度为0~7T的范围内对两个不同组份的Hg_(1-x)Mn_xTe(N_A>N_D)样品进行了输运特性的研究.组份x=0.03的样品在弱磁场(B<0.6T)下出现磁阻振荡,用修正的Pidgeon-Brown模型拟合各振荡峰值位置,得到共振受主能级随温度降低而升高,表明受主共振态已形成束缚磁极化子(RABMP).组份x=0.065的样品出现阶段性下降负磁阻行为,理论分析表明这是受主能级钉扎费密能级并在强场(B~1.5T)通过a_v(-1)价带顶引起价带空穴散射增强.两个样品都呈现负磁阻行为,但从磁阻的各向异性及能带分析表明其机理有所不同. 相似文献