Theory of solid solubility for rare earth metal based alloys

Both parabola and ellipse separating schemes are used to study the solid solubilities for the binary alloy systems based on the 13 rare earth metals. It has been found that the soluble elements can be separated from the insoluble ones by a parabolyy ₁=a?bx ₁ ² or an ellipse(x ₂?m)²/c²+(y₂?n)²/d²=1. The results show that the overall reliabilities of the solid solubilities for the 897 binary alloys based on the rare earth metals are 89.2% and 92.8% for the parabola and ellipse regularities respectively. The constants a and b in the parabola equation, andm, n, c andd in the ellipse equation are discussed, which can be related to some appropriate parameters for each host metal respectively.     

Early stages of laser mixing process in Sb/Ge multilayer thin films

The onset of mixing at the interfaces between Sb and Ge in thin multilayered films containing two or four layers has been studied. The films were irradiated with nanosecond laser pulses in order to trigger mixing, and in situ reflectivity measurements were used to follow the transformation in real-time. Cross sectional transmission electron microscopy analysis was used to study both the structure and the composition profile before and after irradiation.A threshold irradiation energy exists for the onset of mixing, below which roughening of the interface between the layers is observed, together with recrystallization of the surface Sb layer following melting. The results are consistent with a melting/diffusion process which is inhomogeneously nucleated at the interface between the top Sb and Ge layers. Once mixing is initiated an amorphous Sb-Ge layer of constant thickness is formed, corresponding to mixing along a well defined planar melt front. Voids are observed at the former Sb/Ge interface, which may be related to interfacial stress in the as-grown configuration.     

Silicide formation by furnace annealing of thin Si films on large-grained Ni substrates

Si films with a thickness of approximately 250 nm have been electron-beam evaporated on thick, large-grained Ni substrates (grain size a few mm to 1 cm in diameter). An in situ sputter cleaning procedure has been used to clean the Ni surface before the Si deposition. Thermal annealings have been performed in a vacuum furnace. Ni₂Si is the first phase that grows at temperatures between 240 °C and 300 °C as a laterally uniform interfacial layer with a diffusion-controlled kinetics. The layer thicknessx follows the growth lawx ²=kt, withk=k ₀ exp(-E _a k _B T), wherek ₀=6.3 × 10^–4cm 2/s andE _a=(1-1±0.1) eV. Because of the virtually infinite supply of Ni, annealing at 800 °C for 130min yields a Ni-based solid solution as the final phase. The results are compared with those reported in the literature on suicide formation by the reaction of a thin Ni film on Si substrates, as well as with those for interfacial phase formation in Ni/Zr bilayers.     

Short pulse UV laser ablation of solid and liquid gallium

Received: 3 August 1998/Accepted: 7 August 1998     

The influence of the solubility limit on diffusion of as implants in silicon

Enhanced diffusion of implanted arsenic impurities in silicon during subsequent thermal annealing can be interpreted in terms of a system of reaction-diffusion equations. It is shown that for high doses the local solubility limit can considerably influence the reactions between the defects involved and thus markedly change the effective diffusion of As donors. A similar effect can be brought about by the presence of predoped donors/acceptors, which also can significantly accelerate/retard the effective diffusion of As implants. Furthermore, an explanation of some precipitation/clustering processes during a rapid/slow cooling-down is proposed. Finally, several contradictory experimental results published previously will be shown to be compatible with the present model.     

A Mössbauer and ESR study of LiNbO3-Fe2O3 for low Fe2O3 concentrations

Samples of the system LiNbO₃-Fe₂O₃ prepared by water quenching and by the double-roller quenching method in the range up to 24 mol% Fe₂O₃ were investigated by Mössbauer and ESR spectroscopy. In the water quenched samples up to 11 mol% Fe₂O₃ only the Fe³⁺ and the Fe²⁺ valence states could be detected. The Fe²⁺ concentration decreased with increasing Fe₂O₃ content. Above 11 mol% Fe₂O₃ magnetically split Mössbauer spectra indicated the presence of Fe₂O₃ clusters. The isomer shift values of Fe³⁺ as a function of Fe₂O₃ concentration showed jumps at 6 and 11 mol% Fe₂O₃, whereas no significant changes could be detected in the quadrupole splitting values. The ESR data already exhibited the existence of isolated Fe³⁺ ions and of clusters with Fe-Fe distances less than 8 Å for the lowest Fe₂O₃ concentration. The cluster signal intensity increased with increasing Fe₂O₃ content. The roller quenched samples showed increased Fe²⁺ concentration as compared to the water quenched samples, which suggests that slow quenching results in iron oxidation and cluster formation. For low Fe₂O₃ concentrations a valence state change Fe³⁺Fe²⁺ can easily be obtained by heat treatments in various atmospheres, whereas for higher Fe₂O₃ contents (9.8 mol%) precipitations of-Fe (in reducing atmosphere) and Fe₂O₃ (in air) could be observed in addition to the valence state changes of a remaining part of dissolved Fe ions. On the basis of the obtained results a model was suggested for the unusual behaviour of the lattice parameters observed in LiNbO₃-Fe₂O₃.     

Structural ripple formation in Ge/Sb multilayers induced by laser irradiation

Thin multilayer films (Ge/Sb/Ge/Sb/Si substrate) have been irradiated with single nanosecond laser pulses (=193 nm). Real-Time Reflectivity (RTR) measurements have been used to follow the transformation in situ and cross-sectional transmission electron microscope analysis was used to study both the microstructure and the composition profile before and after irradiation. Melting and mixing are both found to nucleate at preferential sites in the upper Ge/Sb interface. During this process the film surface topography changes in a way not previously seen, and rippling of the film is observed due to lateral mass flow induced in the Sb layer underneath the surface, most probably arising from volume changes upon melting. For the highest irradiation energy densities, melting of the whole multilayer configuration takes place, the ripples are no longer observed, and following cooling and solidification, a mixed amorphous GeSb film is formed.     

Positron annihilation in synthetic zeolites

Both lifetime and angular correlation of positron annihilation have been measured for a series of synthetic zeolites for which the void structures are known fairly well. All of the zeolites had long lifetime components and a narrow momentum component which are ascribable to o-Ps and p-Ps annihilations in the voids, respectively. The correlation between the width of the p-Ps narrow component and the size of the largest voids showed a remarkable agreement with a theoretical estimate based on the spherical potential well model. The measurement of p-Ps momentum thus appears to be prospective as a tool to determine the size of voids of materials. The lifetime of the long lifetime component, on the other hand, showed a poor correlation with the void size even from a qualitative viewpoint, suggesting that factors other than the simple void size effect are dominant in determining the o-Ps lifetimes. Discussion is made on the cause of the different dependences of o-Ps and p-Ps annihilation parameters on the void size. It has also been found that p-Ps fraction is always larger than one third of the o-Ps fraction in all the zeolites studied. A discussion is presented on this point, too.Formerly, RIISOM     

Surface free energy of laser-produced bond percolators

Pulsed laser irradiation of thin metallic films on non-wetted substrates creates two-dimensional bond percolator structures. We show that these can be understood as frozen minimum free energy configurations. The spacing between nodes is found to depend linearly on the initial film thickness, as verified experimentally for the case of a Ti film on sapphire.     

On the cleaning of monocrystalline metallic samples from impurities

The problem of sample cleaning is essential for all the scientists using ultra-high vacuum (UHV) techniques. The paper explores the issue of how the real structure of the monocrystalline sample affects its cleaning procedure. The mosaic structure of a monocrystalline sample should be taken into account in the interpretation of segregation and adsorption phenomena studies carried out under UHV conditions. Some examples of the cleaning of an Fe(1 1 1) sample from sulphur and carbon impurities are presented in the paper. Cleaning may result in obtaining two different states: clean surface and clean defects or clean surface but filled defects. According to these studies, the number of adsorption sites in the defects equals approximately 50% of the number of adsorption sites on the surface.     

The solid state phase transformation of potassium sulfate

Potassium sulfate single crystals that are grown from aqueous solutions lose, upon the first heating, up to 1% of mass that is assumed to be water. This mass loss occurs in the vicinity of the PT from orthorhombic to hexagonal K₂SO₄. Only in the first heating run of K₂SO₄ that has not yet released water, pretransitional thermal effects can be observed in the DTA curve. If K₂SO₄ crystals are grown from solutions containing 4 wt% Cd, Cu, or Fe, only Cu or Fe can be incorporated significantly with concentrations of several 0.1%. The phase transformation temperature measured for such solid solutions depends on the heating rate. For pure K₂SO₄, the phase transformation temperature is independent of heating rate 581.3 ^°C and the enthalpy of transformation is (5.8±0.2) kJ/mol.     

Positron annihilation in synthetic zeolites (II) magnetic quenching effect

Positron lifetime spectra were re-measured for a series of synthetic zeolites using a large time window of observation. Magnetic quenching experiments were also performed for the zeolites, and it has been confirmed that both the ₄ and the ₃ components are due to o-Ps. The annihilation rate of the third component, ₃, showed a good correlation with the size of the largest voids, which is similar to the correlation reported for other compounds. However the annihilation rate of the longest-lived component, ₄, showed a poor correlation with the void size. The ₃ component has thus been assigned to o-Ps in the regular voids of the zeolites, and the ₄ component to that escaped to inter-particle open spaces.     

Intrinsic inhomogeneity and non-linear conduction in charge-ordered Bi0.5Ca0.4Sr0.1MnO3

Systematic studies of X-ray, magnetic, electronic transport, and elastic properties have been performed on polycrystalline Bi_0.5Ca_0.4Sr_0.1MnO₃ sample. The sample exhibits charge ordering (CO) state below T_CO (=304 K), accompanied by a distinct maximum in magnetization. The softening of Young's modulus in the vicinity of T_CO indicates that there is a strong coupling of electron-phonon due to Jahn-Teller (JT) effect. The dynamic ferromagnetic spin correlations are observed at high temperatures above T_CO, which are replaced by antiferromagnetic (AFM) spin fluctuations at a concomitant CO transition. Below 32 K, a spin-glass (SG) state dominates at low temperatures. The voltage-current (V-I) characteristics measurement results indicate that the non-linear conduction starts above a threshold current, giving rise to a region of negative differential resistance (NDR). The origin of the non-linear conduction is discussed in view of current induced collapse of CO state associated with phase-separation mechanism.     

Influence of nucleation on the kinetics of boron precipitation in silicon

A study of the precipitation of boron implanted into pre-amorphized silicon has been carried out following several thermal processes in the temperature range between 550 and 900 °C. It will be shown that the formation of inactive boron takes place even during a low-temperature solid-phase epitaxy of the regrowing layer, when the starting concentration level exceeds about 3.5×10²⁰ atoms/cm³. The presence, at the beginning of the annealing process, of inactive atoms in the form of small aggregates which behave as nucleation centers, markedly affects the precipitation kinetics during the thermal treatments. In these conditions the experimental data follow the Ham's theory of precipitation. On the contrary, if all the dopant is incorporated in the lattice side, nucleation is the limiting factor for boron deactivation.     

Phase stability in substitutionally Mn-doped GaAs: Role of lattice constraint

Phase stability of Ga_xMn_1−xAs alloy with a zincblende structure over the whole Mn composition is investigated by means of the full-potential linearized augmented plane-wave method and the cluster expansion method, and role of a lattice constraint from substrate on the phase stability is discussed. The calculated results demonstrate a phase separated type phase diagram with a miscibility gap even when the lattice constraint by changing the lattice constant is imposed, where the critical temperature is found to decrease with increasing the lattice constant. Thus, the elastic constraint from the substrate acts to help stabilize a solid solution so as to realize the magnetic semiconductor with higher Mn composition.     

Nonlinearities in sedimentation: a microscopic study

Effect of temperature and surface tension on surface during sedimentation is studied using atomic force microscopy. Effects of surface tension is incorporated by using ∼1 mm radius water droplets. Surface tension of water droplet directed the deposition of dissolved particles around the perimeter of the droplet; leaving almost hollow circle in the middle with light deposition due to the particles being close to the surface. Evaporating shallow water solutions left random salt structures on the surface. Growth exponents are calculated along with the fractal dimension. For sedimentation process in shallow water (depth of ∼2 mm), a transition is observed from continuum model (1.88±0.2) to KPZ (0.406±0.082) universality class around ∼1 μm at room temperature. For droplets evaporation, turbulent (multi-affine) to self-affine transition is observed. Fractal dimensions (FD) for the droplets are found to be between one and two. The FD values are consistent with the fact that competing nonlinear terms are present in the system.     

Simulation of Temperature-Dependent Resistivity for Manganite La1/3Ca2/3MnO3

The resistivity of the heavy-doped La1/3Ca2/3MnO3 （LCMO） is simulated using a random resistor network model, based on a phase separation scenario. The simulated results agree well with the reported experimental data, showing a transition from a charge-disordered （CDO） state embedded with a few ferromagnetic （FM） metallic clusters to a charge-ordered （CO） state, corresponding to the transition from a high-temperature paramagnetic （PM） insulating state to a low-temperature antiferromagnetic （AF） insulating state. Furthermore, we find that the number of AF/CO clusters increases with decreasing temperature, and the clusters start to connect to each other around 250K, which causes percolating in the system. The results further verify that phase separation plays a crucial role in the electrical conductivity of LCMO.     

Giant electroresistance and nonlinear conduction in electron-doped Ca0.9Ce0.1MnO3

We report a large resistance drop induced by Dc electrical currents in charge-ordered Ca_0.9Ce_0.1MnO₃. A giant electroresistance (ER) of ∼90% at 100 mA current below charge ordering (CO) transition temperature (T_CO) is found. Nonlinear conduction, which starts above a threshold current, gives rise to a region of negative differential resistance (NDR). The nonlinear conduction cannot be explained by homogeneous Joule heating of the sample. The origin of these phenomena is discussed in view of current induced collapse of CO state associated with phase-separation mechanism. This work can be useful for the potential applications of ER such as nonvolatile memory elements.     

Laser ablation of a molten Ga target; comparison of experiments and simulation

The laser ablation mechanism of a molten Ga target was examined through comparison of experiments and simulation. The ablation was performed using an ArF excimer laser (193-nm wavelength and 20-ns duration) in vacuum. The observed existence of the threshold laser fluence (necessary for onset of the ablation) and linear increases in both the Ga deposition rate and the Ga emission (fluorescence) intensity with the laser fluence were satisfactorily explained by the simulation based on the thermal ablation model. In addition, it was found that most of the ablated particles are transferred to the substrate not in the form of an excited ion but an excited neutral atom, except at and near the target. Received: 3 September 2001 / Accepted: 7 November 2001 / Published online: 20 December 2001