The effect of hydrogenation in HgxCd1 − xTe thin films grown on p-CdTe (211) B substrates

Fourier transform infrared (FTIR) transmission, Hall effect, and nuclear resonance reaction measurements have been carried out to investigate the effect of hydrogenation on the deep levels and the hydrogen depth profiling in nominally undoped Hg_xCd_{1 − x}Te layers grown on undoped p-CdTe (211) B-orientation substrates by molecular beam epitaxy. After hydrogenation, the FTIR spectra showed that the transmittance intensity increased in comparison to that of the as-grown Hg_xCd_{1 − x}Te and that the absorption edge shifted to the short wavelength range. Hall effect measurements showed that the carrier concentration decreased and the mobility increased after hydrogenation. After hydrogenation, p-type Hg_xCd_{1 − x}Te is converted to n-type Hg_xCd_{1 − x}Te with high resistivity. Nuclear resonance raaction measurements show that the concentration and the penetration depth of the hydrogen atom in n-Hg_0.77Cd_0.23Te are 3.5% and 640 Å, respectively. The areal density of the hydrogen-containing layer at the surface of the hydrogenated n-Hg_0.77Cd_0.23Te film is 4.39 × 10¹⁵ atoms/cm². These results indicate that hydrogen atoms not only effectively passivate impurities or defects in the Hg_xCd_{1 − x}Te film but also change the carrier type of p-Hg_xCd_{1 − x}Te.     

Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S多层纳米线中s-d交换作用的研究

以氧化铝纳米孔为模板,采用直流电化学沉积的方法制备了Cd_(0.96)Zn_(0.04)S/Cd_(0.97)Mn_(0.03)S/Cd_(0.96)Zn_(0.04)S量子阱纳米线阵列,并系统研究了该纳米线阵列在不同温度和不同磁场下的电学输运特性.随着外磁场的变化,样品表现出共振传输特性.通过量子阱理论对实验现象进行了分析,直接得到了稀磁层Cd_(0.97)Mn_(0.03)S中s-d交换作用常数N_0α的定量结果.研究发现该交换作用常数随温度具有e~(-1/T)的变化趋势.     

负带隙HgCdTe体材料的磁输运特性研究

通过单晶生长了Cd组分为0.1的p型HgCdTe体材料,并制备了具有倒置型能带序的HgCdTe场效应器件.通过磁输运测试,在负带隙HgCdTe体材料中观察到明显的量子霍尔平台效应和Shubnikov-de Haas(SdH)振荡效应,证明样品具有较好的质量.利用SdH振荡对1/B关系的快速傅里叶变换,得到了样品的零场自旋分裂能约为26.55 meV,证明样品中存在强自旋-轨道耦合作用.进一步分析SdH中的拍频节点估算了样品中的有效g因子约为–11.54.     

N型稀磁半导体Ge_(0.96–x) Bi_xFe_(0.04)Te薄膜的磁电性质研究

GeTe基稀磁半导体材料因具有可独立调控载流子浓度和磁性离子浓度的特性而受到广泛关注.本文利用脉冲激光沉积技术制备了该体系的单晶外延薄膜,并通过高价态Bi元素部分取代Ge元素的方法实现了材料中载流子类型从空穴向电子的转变,即制备出N型GeTe基稀磁半导体.测量结果表明,无论是室温还是低温下的Hall电阻曲线皆呈现负斜率,说明体系中载流子是电子;并且当Bi掺杂量达到32%时,电子浓度为10~(21)/cm~3.变温输运性质的测量证明体系的输运行为呈现半导体特征.通过测量低温10 K下的绝热磁化曲线,在高Bi掺杂体系中观测到了明显的铁磁行为,而低于32%Bi掺杂量的体系中未观察到.这一结果说明,高掺杂Bi的替代导致载流子浓度的增加,促进了载流子传递Ruderman-Kittel-Kasuya-Yoshida相互作用,使得分散的Fe-Fe之间产生磁耦合作用,进而形成铁磁有序态.     

Magneto-optical properties and exciton dynamics in diluted magnetic semiconductor nanostructures

Nanostructures of diluted magnetic semiconductors were fabricated to study novel magneto-optical properties that are derived from quantum confined band electrons interacting with magnetic ions. Quantum dots (QDs) of Cd_0.97Mn_0.03Se were grown by the self-organization on a ZnSe substrate layer. QDs of Zn_0.69Cd_0.23Mn_0.08Se and quantum wires (QWRs) of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se were fabricated by the electron beam lithography. A single quantum well (QW) of ZnTe/Zn_0.97Mn_0.03Te and double QWs of Cd_0.95Mn_0.05Te–CdTe were grown by molecular beam epitaxy. Magneto-optical properties and the formation and relaxation dynamics of excitons were investigated by ultrafast time-resolved photoluminescence (PL) spectroscopy. Excitons in these nanostructures were affected by the low-dimensional confinement effects and the interaction with magnetic ion spins. The exciton luminescence of the Cd_0.97Mn_0.03Se QDs shows the confined exciton energy due to the dot size of 4–6 nm and also shows marked increase of the exciton lifetime with increasing the magnetic field. The QDs of Zn_0.69Cd_0.23Mn_0.08Se fabricated by the electron beam lithography display narrow exciton PL spectrum due to the uniform shape of the dots. The exciton luminescence from the QWRs of Cd_0.92Mn_0.08Se and Zn_0.69Cd_0.23Mn_0.08Se shows the influence of the one-dimensional confinement effect for the exciton energy and the luminescence is linearly polarized parallel to the wire direction. The transient PL from the ZnTe/Zn_0.97Mn_0.03Te QWs displays, by the magnetic field, the level crossing of the exciton spin states of the nonmagnetic and magnetic layers and the spatial spin separation for the excitons. Cd_0.95Mn_0.05Te–CdTe double QWs show the injection of the spin polarized excitons from the magnetic well to the nonmagnetic QW.     

Surface photovoltage investigations of Cd1−xMnxTe for x = 0.01 and 0.10

Surface photovoltage investigations of Cd_1−xMn_xTe monocrystals for x = 0.01 and 0.10 were performed in the temperature range between 100 and 300 K with a modified Kelvin method at a pressure of 10⁻⁵ Pa. The surfaces with orientation (110) were ground, polished with “Gamal”, and rinsed in acetone and alcohol. Three types of effects were observed on the surface spectroscopy curves: A sharp increase in photovoltage, connected with the electron band-to-band transitions for a photon energy equal to the energy gap. Photovoltage quenching attributed to the existence of surface states with energy just above the edge of the valence band. Increase in photovoltage in the range between 0.9 and 1.0 eV resulting from electron transitions between the valence band and energy states connected with manganese ions.     

The crystal structure of (Pb0.5Cd0.5)Sr2 (Y1−xCax)Cu2O7

The crystal structures of (Pb_0.5Cd_0.5)Sr₂YCu₂O₇, (Pb_0.5Cd_0.5)Sr₂(Y_0.6Ca_0.4)Cu₂O₇ and (Pb_0.5Cd _0.5)Sr₂(Y_0.5Ca_0.5)Cu₂O₇ have been refined by the Rietveld method for the X-ray diffraction data. The refinement results indicate that both Pb and Cd atoms in the (Pb, Cd)O layers and O(3) atoms are displaced from their ideal sites, and that there is a complicated occupation in the (Pb, Cd)O layers, i.e., other cations, such as Sr²⁺, Cu²⁺ and Ca²⁺, can occupy the (Pb, Cd) site for these samples. This may be the reason why the lattice constants do not vary monotanically with the calcium content, and why there exist broad superconducting transitions in the system (Pb_0.5Cd_0.5)Sr₂(Y_1−xCa_x)Cu₂O₇. The refinement results also indicate that, as the calcium content increases, the O(2) atoms move close to the CuO₂ planes and far from the (Pb, Cd)O layers. Thus, the increase of calcium content results in charge transfer from the charge reservoir layer (Pb, Cd)O to the CuO₂ planes. This result is consistent with the bond valence sums of the Cu ions in the CuO₂ planes.     

Structural and compositional analysis of InBixAsySb(1−x−y) films grown on GaAs(0 0 1) substrates by liquid phase epitaxy

The growth of epitaxial InBi_xAs_ySb_(1−x−y) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy. Orientation and single crystalline nature of the film have been confirmed by X-ray diffraction. Scanning electron micrograph shows abrupt interface at micrometer resolution. Surface composition of Bi(x) and As(y) in the InBi_xAs_ySb_(1−x−y) film was measured using energy dispersive X-ray analysis and found to be 2.5 and 10.5 at.%, respectively, and was further confirmed with X-ray photoelectron spectroscopy. Variation of the composition with depth of the film was studied by removing the layers with low current (20 μA) Ar⁺ etching. It was observed that with successive Ar⁺ etching, In/Sb ratio remained the same, while the As/Sb and Bi/Sb ratios changed slightly with etching time. However after about 5 min etching the As/Sb and Bi/Sb ratios reached constant values. The room temperature band gap of InBi_0.025As_0.105Sb_0.870 was found to be in the range of 0.113–0.120 eV. The measured values of mobility and carrier density at room temperature are 3.1×10⁴ cm² V⁻¹ s⁻¹ and 8.07×10¹⁶ cm⁻³, respectively.     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.     

HgCdTe长波光伏探测器的表面漏电流及1/f噪声研究

在同一Hg_1-xCd_xTe晶片上(x=0217)制备了单层ZnS钝化和双层 （CdTe+ZnS）钝化的两种器件，对器件烘烤前后的暗电流和1/f噪声进行了测试，烘烤 前发现，ZnS钝化的器件在反偏较大时具有较大的表面隧道电流，而这种表面漏电流是ZnS钝 化器件具有较大1/f噪声电流的原因，通过高分辨x射线衍射中的倒易点阵技术（recipr ocal space mapping,RSM）研究了单双层钝化对HgCdTe外延层晶格完整性的影响，发现单层 ZnS钝化的HgCdTe外延层产生了大量缺陷，而这些缺陷正是ZnS钝化器件具有较大表面漏电流 和1/f噪声的原因. 经过高温烘烤后，ZnS钝化的器件暗电流和1/f噪声增加，而双 层钝化器件经过高温烘烤后性能提高. RSM的研究表明，高温烘烤后ZnS钝化的HgCdTe外延层 产生大量缺陷，这些缺陷正是单层钝化器件表面漏电流和1/f噪声电流增加的原因. 关键词： HgCdTe 光伏探测器 钝化 表面漏电流 1/f噪声 倒易点     

Negative luminescence from In1−xAlxSb and CdxHg1−xTe diodes

Indium aluminium antimonide (In_1−xAl_xSb) and cadmium mercury telluride (Cd_xHg_1−xTe) heterostructure diodes, which comprise a near intrinsic active region bounded by more highly doped contact regions, exhibit positive or negative luminescence at medium to long infrared wavelengths when forward or reverse biased respectively at room temperature. In reverse bias, the carrier densities in the near intrinsic region are reduced below their equilibrium values by the effects of exclusion and extraction. In consequence, the radiative recombination is reduced and the devices emit less infrared radiation than the thermal equilibrium value. The observed intensity of the negative luminescence is in general agreement with expected values.     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

Magnetization study of polycrystalline YBa2AlxCu(3−x)O7−δ (x = 0.05, 0.10 and 0.20) compounds

Superconductivity in polycrystalline YBa₂Al_xCu_(3−x)O_7−δ materials was characterized by dynamic AC and quasistatic DC magnetometry. Intragranular persistent current density and low-loss intergranular critical current density were deduced using DC and AC techniques, respectively. Addition of aluminum produced modest increases in the intragranular persistent current for x < 0.2, but drastically reduced the intergranular critical current density for x = 0.2. The critical temperature T_c for superconductivity decreased only 4% for Al content up to x = 0.2.     

Synthesis and properties of Hg0.7Pb0.3(BaSr)2Ca2Cu3Oz superconductors

We have synthesized Hg(Pb)-1223 with substitutions of Sr for Ba, i.e. Hg_0.7Pb_0.3Ba_2−xSr_xCa₂Cu₃O_z (x = 0.0–2.0) by the ampoule method. The spray-drying method and thermal decomposition under vacuum were applied for the preparation of homogeneous precursors. Samples with T_c = 110–128 K were obtained without oxygen annealing. We found that substitution of Ba by Sr remarkably relaxed the requirements on the precursors preparation and allowed their handling under ambient conditions.     

Material design of new lithium ionic conductor, thio-LISICON, in the Li2S–P2S5 system

A new lithium ionic conductor of the thio-LISICON (LIthium SuperIonic CONductor) family was found in the binary Li₂S–P₂S₅ system; the new solid solution with the composition range 0.0≤x≤0.27 in Li_3+5xP_1−xS₄ was synthesized at 700 °C and characterized by X-ray diffraction measurements. Its electrical and electrochemical properties were studied by ac impedance and cyclic voltammetry measurements, respectively. The solid solution member at x=0.065 in Li_3+5xP_1−xS₄ showed the highest conductivity value of 1.5×10⁻⁴ S cm⁻¹ at 27 °C with negligible electronic conductivity and the activation energy of 22 kJ mol⁻¹ which is characteristic of high ionic conduction state. The extra lithium ions in Li₃PS₄ created by partial substitution of P⁵⁺ for Li⁺ led to the large increase in ionic conductivity. In the solid solution range examined, the minimum conductivity was obtained for the compositions, Li₃PS₄ (x=0.0 in Li_3+5xP_1−xS₄) and Li₄P_0.8S₄ (x=0.2 in Li_3+5xP_1−xS₄); this conductivity behavior is similar to other thio-LISICON family with the general formula, Li_xM_1−yM_y′S₄ (M=Si, Ge, and M′=P, Al, Zn, Ga, Sb). Conduction mechanism and the material design concepts are discussed based on the conduction behavior and the structure considerations.     

The effect of rare earth substitution on the magnetic properties of Ni0.5Zn0.5MxFe2−xO4 (M: rare earth)

Variation of the complex permeability with frequency of Ni_1−xZn_xFe₂O₄ (x=0.5, 0.6 and 0.7) prepared by a combustion method has been measured over a wide range of frequency, up to 1.8 GHz. Zn content improves permeability but moves the onset of resonance to lower frequencies.

The influence on some properties of samples prepared by the insertion of small amounts of Ruthenium, Yttrium and rare-earth cations into the Ni_0.5Zn_0.5M_xFe_2−xO₄ ferrite has been also investigated. Relative losses and Curie temperature of all the samples have been measured. Ferrites substituted with Ru and Gd improve microwave behavior compared to non-substituted samples.     

Magnetic behaviour of some Mn.III2.VI4 compounds and their alloys

Measurement of the magnetic susceptibility χ as a function of temperature were made on polycrystalline samples from the alloy systems Cd_1−zMn_zGa₂Se₄, Zn_1−zMn_zGa₂Se₄ and Cd_1−zMn_zIn₂Te₄ which had been subjected to various heat treatments. The 1/χ versus T curves indicated that for the Zn---Se alloys, for all values of z, samples slowly cooled to room temperature were antiferromagnetic showing ideal Curie-Weiss behaviour, but for samples quenched from 700°C the behaviour was a mixture of antiferromagnetic and spin-glass. For the Cd---Se alloys, samples from the range (0.6 < z < 1.0) showed very similar behaviour, but in the range (0 < z < 0.6) even the very slowly cooled samples showed a mixture of antiferromagnetic and spin-glass behaviour. For the Cd---Te alloys, all samples, however heat-treated, showed spin-glass form. Values of the Curie-Weiss constant Ф were determined from all of the 1/χ versus T curves, and by comparison with the T(z) phase diagrams for the different alloy systems, the values of Ф were correlated with the ordering of the Mn atoms on the cation lattice. It is shown that the experimental values of Ф can give a very convenient way of determining the type of ordering and the degree of order in such alloys.     

Transport properties of SrCe0.95Y0.05O3−δ and its application for hydrogen separation

Transport properties of SrCe_0.95Y_0.05O_3−δ were studied by impedance spectroscopy and by measuring open-cell voltage (OCV) and gas permeation. Ionic transference numbers were determined by measuring the OCV of concentration cells and water vapor evolution of an O₂/H₂ fuel cell. We observed interfacial polarization on the basis of the I–V curves obtained by discharging a hydrogen concentration cell or an O₂/H₂ fuel cell. The observed high protonic conductivity (high proton and low oxide ion transference numbers) makes SrCe_0.95Y_0.05O_3−δ a potential material for hydrogen separation. From proton conductivity measurements, under a given hydrogen partial pressure difference of 4%/0.488%, the hydrogen permeation rate (of a dense membrane with 0.11 cm in thickness) was calculated to be ≈0.072 cm³ (STP) cm⁻² min⁻¹ at 800°C, whereas the permeation rate calculated from short-circuit current measurements was ≈0.023 cm³ (STP) cm⁻² min⁻¹ at 800°C. The difference between calculated and observed permeation rates is probably due to interfacial polarization.     

Spectral editing in MAS NMR of aprotic solids P---Cd cross-polarization and heteronuclear double-quantum filtering studies in II-IV-V2 semiconductor alloys

Magic-angle-spinning NMR spectra of aprotic solids, ceramics and glasses frequently suffer from poor site resolution due to wide chemical shift distribution effects. In such cases, cross-polarization and heteronuclear double-quantum filtering experiments involving nuclei other than ¹H offer unique spectral editing capabilities. The utility of such assignment techniques for examining site populations in semiconductor alloys is demonstrated for the chalcopyrite systems CdGeAs_2−xP_x, CdSiAs_2−xP_x and Zn_xCd_1−xGeP₂. The results permit a distinction between local and non-local effects on experimental chemical shift trends and reveal that compositional dependences observed in these alloys are dominated by non-local chemical shift contributions.     

Ramans study of Y1−xPrxBa2Cu3O7−δ and YB2Cu3−xZnxO7−δ single crystals

Single crystals with known T_c values of Y_1−xPr_xBa₂Cu₃O_7−δ (Y---Pr1:2:3) and YBa₂Cu_3−xZn_3−xZn_xO_7−δ (Y---Zn1:2:3) systems are studied by Raman measurements. The Raman spectra for (Y---Pr1:2:3) single crystals show that the frequencies of Ba and O_z modes increase as the Pr content increases. The results are consistent with the hole-localization scheme proposed for the suppression of superconductivity in the polycrystalline Y---Pr1:2:3 systems. On the other hand, in the Y---Zn1:2:3 system, all the Raman modes do not change in frequencies. However, the FWHM of the Cu(2) mode increases with the decrease of T_c, indicating strong scattering of charge carriers by the substituted Zn ions in the CuO₂ planes. The induced disorder in the CuO₂ planes may be related with suppression of T_c in the Y---Zn1:2:3 system. Thus, the suppression mechanism in the Y---Zn1:2:3 systems seems to be different from that in the Y---Pr1:2:3 systems.