Femtosecond Dynamics of Optically Induced Anisotropy of Complex Molecules in the Gas Phase

The evolution of optically induced anisotropy in an equilibrium ensemble of free asymmetric tops under collisionless conditions has been investigated theoretically and experimentally. The dynamics of the orientation correlation functions has been studied, the results of femtosecond experiments on measurement of relaxation of the optically induced anisotropy for perylene in the gas phase are presented, and their interpretation within the framework of the theory developed is given. It is shown that in contrast to stationary anisotropy, its time kinetics has more complete characteristic information about the dynamics of vector correlations in a molecular ensemble.     

Information Content of Fluorescence Polarization and Anisotropy

The equality of information content in fluorescence polarization and emission anisotropy is a common assumption and the two quantities are used according to practical considerations. However, an information-theoretic analysis presented here reveals that their information content is substantially different. A scaling relation exists between polarization and anisotropy, and normalization allows their direct comparison. Various measures of information such as the absolute, relative, differential, and potential entropies all appear larger for anisotropy over part or all of its normalized overlap with the polarization function. The larger information content coincides with the signal range where the emitted light is polarized mostly in the parallel direction. Polarization takes on larger absolute entropy only when the emission is about perpendicular to the incident light and when the differential entropy is considered over the entire physical domain. The additional information locally afforded by polarization appears to be related to its larger signal range whereas the extra information in anisotropy may be attributed to a second perpendicular emission plane in its definition, which is oriented along the axis of propagation of light and takes the contribution of all degrees of rotational freedom into account. Thus anisotropy may be considered as a more accurate and more informative representation of the underlying physical phenomena. Some practical aspects relevant to studies of protein–ligand interactions are also discussed.     

偏振敏感材料中具有圆各向异性的偏振全息光栅

在向列相液晶中掺杂质量分数约0.2%的偶氮侧链型聚合物制成偏振敏感材料,使用正交圆偏振光记录了具有圆各向异性的一维偏振全息光栅,用线偏振光探测偏振全息光栅,得到正,负一级衍射光也为线偏振光,且偏振态与探测光和零级偏振态相互正交,可以运用琼斯矩阵理论加以解释.偏振全息光栅可由外加电场控制衍射级的变化,即在外加电场作用下,正、负一级衍射产生了90°的相位差.在频率6.05 Hz、电压2.2 V的外场作用下,衍射级的极值振荡变化.     

Anisotropy and interlayer interaction in Mo/Si multilayers

The interlayer interaction in superconducting Mo/Si multilayers is determined by the measurements of the upper critical magnetic field and the magnetoconductivity in magnetic fields, parallel and perpendicular to the layers. From these measurements we determined the anisotropy parameter, γ, and the effective thickness, L_eff, which characterize the mutual electronic interaction between the Mo layers across the Si layer. Both quantities oscillate in dependence of the Mo layer thickness for Mo/Si series with constant Si layer thickness.     

Heat-Treatment Induced Magnetic Anisotropy of GaMnSb Films

Conditions and mechanisms of controlled variation of the magnetic anisotropy of GaMnSb films containing magnetic MnSb nanoinclusions by means of heat treatment have been determined. For this purpose, the temperature and magnetic-field dependences of the magnetic moments of samples before and after thermal annealing were measured using a SQUID magnetometer. It is established that the heat treatment of GaMnSb films leads to a significant increase in the values of characteristics determined by the magnetic anisotropy, including the growth of blocking temperature (from 95 to 390 K) and the magnetic anisotropy field (from 330 to 630 Oe). Results of transmission electron microscopy investigation indicate that a change in the magnetic anisotropy of GaMnSb films as a result of their thermal annealing can be related to a transition of the crystalline structure of magnetic MnSb nanoinclusions from hexagonal (space group P6₂/mmc) to cubic (space group F-43m).     

Magnetic Anisotropy and Hidden Martensitic Transition in V3Si

Magnetization, electrical resistivity and heat capacity have been measured on a single crystal V₃Si in the range of (2-25) K and in magnetic field up to 14 T. A different behavior of magnetization for two orientations of the crystal has been found. In one orientation the magnetization displays a clear ferromagnetic character and below T _c coexistence of ferro-magnetism and superconductivity with a peak-effect in the vicinity of upper critical field H _c2. The specific heat measurements show sharp lambda anomaly corresponding to a transition to superconductive state and an additional anomaly around 15 K when applied field suppresses the superconductivity below this temperature.     

应变Si/(001)Si1-xGex空穴有效质量各向异性

基于应变Si/(001)Si1-xGex材料价带E(k)-k关系模型,研究获得了其沿不同晶向的空穴有效质量.结果表明,与弛豫材料相比,应变Si/(001)Si1-xGex材料价带带边(重空穴带)、亚带边(轻空穴带)空穴有效质量在某些k矢方向变化显著,各向异性更加明显.价带空穴有效质量与迁移率密切相关,该研究成果为Si基应变PMOS器件性能增强的研究及导电沟道的应力与晶向设计提供了重要理论依据.     

Anisotropy of the magnetoresistance in Gd5Si2Ge2

The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.     

Electromagnetically Induced Polarization Grating in a Quasi-M-Type Atomic System

International Journal of Theoretical Physics - We propose a quasi-M-type atomic system for realizing the electromagnetically induced polarization grating. The results show that, due to the...     

Optically Induced Effects in the Thermoluminescence of Dosimetric Anion-Defective Corundum Crystals

This paper considers the influence of light fluxes in the 200–600-nm spectral range on the thermally stimulated luminescence (TL) of TLD-500 radiation detectors based on anion-defective corundum crystals. It has been shown that the luminescent-storing action of light in the above spectral range is due to the optical ionization of F-centers and electronic trapping centers of carriers responsible for the dosimetric peak at 450 K and TL at higher temperatures. The features of the dosimetric information distortion depending on the initial state of population of deep traps and the spectral composition and power of optical radiation are discussed.     

Topological Modes in Non-Hermitian Phononic Crystals Optically Induced in a Quantum-Well Array

Physics of the Solid State - Propagation of acoustic waves in a quantum-well array, in which spatially modulated sound amplification and attenuation are implemented by optical excitation at a...     

Optically detected cyclotron resonance in Ge and Si exchange interaction in impact dissociation

We have investigated optically detected cyclotron resonance (ODCR) and ordinary cyclotron resonance (CR) under the same condition, in Ge and Si, which include both high-purity and doped samples. In impact dissociation processes, which are the origin of ODCR, donorbound excitons have larger cross section for impinging electrons than for holes, and conversely, acceptor- bound excitons have larger cross section for holes than for electrons. Moreover, the ratio of impact dissociation cross section for holes to that for electrons varies with the number of excitons bound to an impurity. These phenomena are understood primarily in terms of exchange interaction between impinging carriers and constituents of bound excitons. In addition, it is found that the relative intensity of hole cyclotron resonance against electron resonance is larger in ODCR than in CR. This is understood in terms of exchange interaction by taking the many valley nature of the conduction band into account.     

Modeling Yeast Cell Polarization Induced by Pheromone Gradients

Yeast cells respond to spatial gradients of mating pheromones by polarizing and projecting up the gradient toward the source. It is thought that they employ a spatial sensing mechanism in which the cell compares the concentration of pheromone at different points on the cell surface and determines the maximum point, where the projection forms. Here we constructed the first spatial mathematical model of the yeast pheromone response that describes the dynamics of the heterotrimeric and Cdc42p G-protein cycles, which are linked in a cascade. Two key performance objectives of this system are (1) amplification—converting a shallow external gradient of ligand to a steep internal gradient of protein components and (2) tracking—following changes in gradient direction. We used simulations to investigate amplification mechanisms that allow tracking. We identified specific strategies for regulating the spatial dynamics of the protein components (i.e. their changing location in the cell) that would enable the cell to achieve both objectives.     

利用仲氢诱导极化技术实现 Deutsch算法

核磁共振系统是实现量子计算的有效物理体系之一．但是随着量子位数的不断增加,运用核磁共振技术实现计算任务存在明显的局限性,原因之一是量子计算的初始态-赝纯态,随着量子位数的增加,信号指数性的衰减,量子位数越多制备赝纯态所需的脉冲序列越复杂,越不容易实现,不利于量子位数的扩展;另外,由于核磁共振中制备的赝纯态实际上也是一种混合态,用于实现量子信息任务时存在一定的争议．该文介绍的利用仲氢诱导极化技术(PHIP)制备出的实验初态,能够解决初态处于混合态的问题,并且信号强度显著增强,作者利用此态实现了 ALTADENA 条件下的两量子位的 Deutsch-Jozsa 量子算法和 PASADENA 条件下的三量子位的Deutsch-Like 量子算法．
     

Si Underlayer Induced Nano-Ablation in AgInSbTe Thin Films

AgInSbTe/Si thin films on glass substrates are prepared by dc magnetron sputtering at room temperature. Using Si underlayer as the thermal diffusion layer, the super-resolution nano-ablation holes with a size of 70hm in the AglnSbTe phase change films are obtained by a far-field focused laser experimental setup, with laser wavelength 405 nm and objective-lens numerical aperture 0.90. The nano-ablation formation mechanism is analysed and discussed via the thermal diffusion of sample structures.     

Electric Polarization in ErCrO3 Induced by Restricted Polar Domains

Physics of the Solid State - Electric polarization in ErCrO3 single crystals has been investigated in the temperature range of 5‒370 K. Ferroelectric ordering has not been found in any of the...     

FM-AM Conversion Induced by Polarization Mode Dispersion in Fiber Systems

The conversion of the frequency modulated pulse induced from frequency modulation （FM） to amplitude modulation （AM） by the polarization mode dispersion （PMD） is theoretically and experimentally investigated. When there is no polarizer at the output end of a fiber system, the amplitude modulation depth is stable by 8%. Random amplitude modulation is observed when a polarizer is placed at the output end of the fiber system. The observed minimum and maximum modulation depths in our experiment are 5% and 80%, respectively. Simulation results show that the amplitude modulation is stable by 4% induced mainly by group velocity dispersion （GVD） when there is no polarizer, and the amplitude modulation depth displays the random variation character induced by the GVD and PMD. Lastly, a new fiber system scheme is proposed and little amplitude modulation is observed at the top of the output pulse.     

Anisotropy of electric resistivity of Sapele-based biomorphic SiC/Si composites

The electrical resistivity of Sapele-based biomorphic SiC/Si materials was measured in a wide temperature range from 10 K to room temperature. The samples were fabricated by the reactive infiltration of molten silicon into a carbonized Sapele (African Entandrophragma Cylindricum) wood preform. All the samples studied contained residual Si (10–35 wt %). It was found that the resistivity-temperature (ρ(T)) dependences have semimetallic behavior which becomes very close to linear metallic behavior at 100 < T < 300 K. The obtained values of resistivity were quite low (ρ ≈ 0.002–0.02 Ω cm) and showed strong anisotropy: the resistivity along the wood growth axis was several times lower than that in the perpendicular direction. The extent of this anisotropy was in correlation with the amount of residual Si (and, hence, with the amount of residual porosity) in a sample. The resistivity perpendicular to the wood growth axis drastically increased with the Si content, whereas the resistivity parallel to it was practically independent of the Si content. It is suggested that the presence of residual carbon in the samples and carrier scattering at SiC/Si interphases could determine the observed character of ρ(T) dependences.