Different adsorption structures of pyridine on Si(001) and Ge(001) surfaces

The adsorption and reaction of pyridine on the Si(001) and Ge(001) surfaces are investigated by first-principles density-functional calculations within the generalized gradient approximation. On both surfaces the N atom of pyridine initially reacts with the down atom of the dimer, forming a single bond between the N atom and the down atom. On Ge(001) such an adsorption configuration is most favorable, but on Si(001) a further reaction with a neighboring dimer occurs, resulting in formation of a bridge-type configuration. Especially we find that on Ge(001) the bridge-type configuration is less stable than the gas phase. Our results provide an explanation for a subtle difference in the adsorption structures of pyridine on Si(001) and Ge(001), which was observed from recent scanning tunneling microscopy experiments.     

乙炔在Ge(001)表面吸附的反应路径

采用第一性原理方法研究了乙炔分子在Ge(001)表面的吸附反应.通过系统考察0.5和1.0ML覆盖度时形成di-σ和end-bridge构型的反应路径,研究在表面形成di-σ和paired-end-bridge构型的反应几率.除了表面反应以外,本文还涉及了亚表层Ge原子参与的吸附反应,乙炔在亚表层原子上吸附形成的亚稳态结构sub-di-σ,是形成end-bridge结构的第二条途径,此反应机理对于表面吸附结构的形成起重要的作用.与乙炔分子不同的是,表面以下原子参与时乙烯分子的吸附反应为吸热反应.综合热力学和动力学的分析表明,paired-end-bridge构型是乙炔分子吸附的主要构型,此结论解释了乙炔分子在Ge(001)表面吸附构型的实验结果.对于乙烯和乙炔两分子在Ge(001)表面吸附的分析比较揭示了导致两者之间差异的原因.     

应用理论计算研究MCM-22分子筛相邻酸性位上乙烯和苯的吸附

应用ONIOM计算方法研究了MCM-22分子筛超笼12元环上存在两个酸性位时的酸强度及其与骨架铝之间距离的关系,并研究了乙烯和苯分子吸附的规律.计算采用52T簇模型和B3LYP/6-31G**/MNDO方法.结果表明,存在两个酸性位且两个骨架铝之间间隔1个骨架硅时,酸强度比孤立的酸性位明显降低;当间隔的硅原子数增加时,酸强度呈上升趋势,间隔3个以上骨架硅时,其酸强度与孤立的酸性位几乎没有差别.对于乙烯的吸附,当两个骨架铝之间间隔1~4个骨架硅时,其吸附能几乎没有差别(31~35 kJ/mol);对于苯的吸附,当两个骨架铝之间间隔1个骨架硅时,其吸附能有所提高,因为两个桥羟基同时对苯分子产生氢键吸附作用.当两个骨架铝之间的距离增大时,苯的吸附能几乎相同(21~29 kJ/mol).若两个乙烯分子或苯分子同时吸附在双酸性位上,其吸附能与单个分子在孤立酸性位吸附时几乎没有差别.应用自然键轨道计算分析了吸附配合物的电子结构,进一步探明了乙烯和苯在分子筛酸性位上吸附的本质.     

Structural analysis of the reconstructed Si(001)-C surface

The atomic structure of reconstructed Si(001)c(4 x 4)-C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C(2)H(4)) molecules have been exposed on Si(001)-(2 x 1) surface at 700 degrees C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.     

Maleic anhydride adsorption on silicon (001)

The adsorption of maleic anhydride on the Si(001) surface has been investigated using the first-principles pseudopotential formalism. Our total-energy calculations suggest that maleic anhydride (C2H2-C2O3) adsorbs preferentially through a [2+2] cycloaddition of the C=C bond ([2+2]) with an adsorption energy of around 42 kcal/mol. Besides the [2+2] configuration we have also considered other possible coverages and adsorption models, including the adsorption on inter-row and intrarow dimer sites. Based on the analysis of the relative stability of different adsorption models, we propose the formation of mixed domains, containing the [2+2] unit and an interdimer unit. The comparison of our calculated electronic band structure, vibrational modes, and scanning tunneling microscopy images for the [2+2] and the favored interdimer adsorbed structures corroborate our proposed mixed domain model.     

First principles analysis of the initial oxidation of Si(001) and Si(111) surfaces terminated with H and CH3

Transition state analyses have been carried out within a density functional theory setting to explain and quantify the distinctly different ways in which hydrogen and methyl terminations serve to protect silicon surfaces from the earliest onset of oxidation. We find that oxidation occurs via direct dissociative adsorption, without any energy barrier, on Si(111) and reconstructed Si(001) that have been hydrogen terminated; oxidation initiates with a barrier of only 0.05 eV on unreconstructed Si(001). The commonly measured protection afforded by hydrogen is shown to derive from a coverage-dependent dissociation rate combined with barriers to the hopping of adsorbed oxygen atoms. Methyl termination, in contrast, offers an additional level of protection because oxygen must first undergo interactions with these ligands in a three-step process with significant energy barriers: adsorption of O(2) into a C-H bond to form a C-O-O-H intermediate; decomposition of C-O-O-H into C-O-H and C=O intermediates; and, finally, hopping of oxygen atoms from ligands to the substrate.     

Theoretical study of the reaction of acrylonitrile on Si(001)

Two recent experiments for adsorbed acrylonitrile on the Si(001) surface reported different adsorption structures at 110 and 300 K. We investigate the reaction of acrylonitrile on Si(001) by first-principles density-functional calculations. We find that the so-called [4+2] structure in which acrylonitrile resides between two dimer rows is not only thermodynamically favored over other structural models but also easily formed via a precursor where the N atom of acrylonitrile is attached to the down atom of the Si dimer. The additional initial-state theory calculation for the C 1s core levels of adsorbed acrylonitrile provides an interpretation for the observed low- and room-temperature adsorption configurations in terms of the precursor and [4+2] structures, respectively.     

MoP(001)表面苯胺C―N键断裂机理

油品脱氮可以减少燃烧过程中氮氧化物的排放,并且减弱催化剂的中毒现象,过渡金属磷化物因具有高催化活性和优异的稳定性而成为最具应用前景的新型加氢脱氮(HDN)催化剂。本工作基于周期性平板模型,通过密度泛函理论(DFT)计算研究了苯胺在磷化钼(MoP)(001)表面的吸附以及C―N断键机理。结果表明在MoP(001)表面,苯胺吸附以平躺吸附构型为主,有较大的吸附能,C―C键和C―N键均被吸附活化;苯胺C―N键的直接断裂路径主要起始于与共吸附H_2发生反应,产物为苯和氨,吸附的环己胺的C―N键断裂主要路径是环己胺与共吸附的H发生反应脱去氨基,生成产物为环己烯和氨。     

Molecular beam investigation of hydrogen dissociation on Si(001) and Si(111) surfaces

The influence of molecular vibrations on the reaction dynamics of H2 on Si(001) as well as isotopic effects have been investigated by means of optical second-harmonic generation and molecular beam techniques. Enhanced dissociation of vibrationally excited H2 on Si(001)2 x 1 has been found corresponding to a reduction of the mean adsorption barrier to 390 meV and 180 meV for nu=1 and nu=2, respectively. The adsorption dynamics of the isotopes H2 and D2 show only small differences in the accessible range of beam energies between 50 meV and 350 meV. They are traced back to different degrees of vibrational excitation and do not point to an important influence of quantum tunneling in crossing the adsorption barrier. The sticking probability of H2 on the 7 x 7-reconstructed Si(111) surface was found to be activated both by H2 kinetic energy and surface temperature in a qualitatively similar fashion as H2/Si(001)2 x 1. Quantitatively, the overall sticking probabilities of H2 on the Si(111) surface are about one order of magnitude lower than on Si(001), the influence of surface temperature is generally stronger.     

The chemisorption of coronene on Si(001)-2 x 1

Coronene (C24H12) adsorption on the clean Si(001)-2 x 1 surface was investigated by scanning tunneling microscopy and by density-functional calculations. The coronene adsorbed randomly at 25 degrees C on the surface and did not form two-dimensional islands. The scanning tunneling microscopy measurements revealed three adsorption sites for the coronene molecule on the Si(001) surface at low coverage. The major adsorption configuration involves coronene bonding to four underlying Si atoms spaced two lattice spacings apart in a dimer row. The two minor adsorption configurations involve asymmetrical bonding of a coronene molecule between Si dimer rows and form surface species with a mirror plane symmetry to their chiral neighbor species. The two minor bonding arrangements are stabilized by a type-C defect on the Si(001) surface.     

Initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide

We use density functional theory to investigate the surface chemistry of initial oxidation and hydroxylation of the Ge(100)-2 x 1 surface by water and hydrogen peroxide. Comparison of the reaction of water on the Si(100)-2 x 1 and Ge(100)-2 x 1 surfaces shows that the kinetics of oxidation of the Ge(100)-2 x 1 surface with water is slower. Our calculations also show that oxidation products on the Ge(100)-2 x 1 surface are less thermodynamically stable than on Si. We also investigate two competing dissociation reactions of H2O2 on the Ge(100)-2 x 1 surface. We find that dissociative adsorption via cleavage of the OH bond is less exothermic than OO dissociation. Furthermore, interdimer OO dissociation has a lower activation barrier than interdimer or intradimer OH dissociation, although interdimer dissociation products are found to be less stable compared than those formed from intradimer dissociation reactions. Finally, we find that the oxidation products formed from hydrogen peroxide are more stable than those formed from water.     

Reactions between M+ (M = Si,Ge, Sn and Pb) and benzene in the gas phase

Using a laser ablation/inert buffer gas ion source coupled with a reflectron time-of-flight mass spectrometer, the gas-phase reactions between the IVA group element ions M(+) (M = Si, Ge, Sn and Pb) and benzene seeded in argon gas were studied. In addition to the association reaction pathway (forming [M(C(6)H(6))(x)](+), x = 1, 2, etc.), benzene was dissociated to form complex ions [M(C(5)H(5))](+), [M(C(7)H(5))](+) and [M(C(9)H(x))](+) (x = 5, 7 and 9), etc. DFT theoretical calculations indicated that, in the association products [M(C(6)H(6))](+), the M atom is close to one carbon atom of benzene, while in most of the dissociation complexes, pentagonal structures (M/cyclopentadienyl derivatives) were formed, with the M atom situated near the fivefold axis of the five-membered ring. The bond patterns in these complexes are discussed.     

Self-directed growth of benzonitrile line on H-terminated Si(001) surface

Using first-principles density-functional calculations we predict a self-directed growth of benzonitrile molecular line on a H-terminated Si(001) surface. The C[triple bond]N bond of benzonitrile reacts with a single Si dangling bond which can be generated by the removal of a H atom, forming one Si-N bond and one C radical. Subsequently, the produced C radical can be stabilized by abstracting a H atom from a neighboring Si dimer, creating another H-empty site. This H-abstraction process whose activation barrier is 0.65 eV sets off a chain reaction to grow one-dimensional benzonitrile line along the Si dimer row. Our calculated energy profile for formation of the benzonitrile line shows its relatively easier formation compared with previously reported styrene and vinylferrocene lines.     

Vibrational characterization of different benzene phases on flat and vicinal Si(100) surfaces

Based on high-resolution electron energy loss spectroscopy and temperature-programmable desorption, benzene chemisorption on vicinal and nominally flat Si(100) surfaces has been studied for various adsorption, annealing, and site blocking treatments. Three different chemisorbed benzene (C6H6 and C6D6) phases with distinct thermal desorption characteristics and different vibrational spectra have been separated and characterized on both substrates. All three phases are identified as 1,4-cyclohexadiene-like structures with butterfly geometry. Whereas the dominant phase is di-sigma bonded to the two Si atoms of a single Si-Si dimer, the benzene orientation (double bond orientation) in the other phases is rotated. Di-sigma bonding to Si atoms of adjacent Si-Si dimer for the latter cases is most likely. Coverage and temperature dependent conversions between the different phases have been addressed by vibrational spectroscopy.     

Formation of GeO2 under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penetration of water vapor through graphene defects on Gr/Ge(001)/Si(001) samples leads to the oxidation of germanium, forming GeO₂. The presence of trigonal GeO₂ under graphene was identified by Raman and XRD measurements. The oxidation of Ge leads to the formation of blisters under the graphene layer. It is suggested that oxidation of Ge is connected with the dissociation of water molecules and penetration of OH molecules or O to the Ge surface. It has also been found that the formation of blisters of GeO₂ leads to a dramatic increase in the intensity of the graphene Raman spectrum. The increase in the Raman signal intensity is most likely due to the screening of graphene by GeO₂ from the Ge(001) surface.     

Two bonding configurations of acetylene on Si(001)-(2 x 1): a combined high-resolution electron energy loss spectroscopy and density functional theory study

Two coexisting adsorption states of molecularly adsorbed acetylene on the Si(001)-(2 x 1) surface have been identified by a combined study based on the high-resolution electron energy loss spectroscopy and density functional computations. Seven possible adsorbate-substrate structures are considered theoretically including their full vibrational analysis. Based on a significantly enhanced experimental resolution, the assignment of 15 C2H2- and C2D2-derived vibrational modes identifies a dominant di-sigma bonded molecule adsorbed on top of a single Si-Si dimer. Additionally there is clear evidence for a second minority species which is di-sigma bonded between two Si-Si dimers within the same dimer row (end-bridge geometry). The possible symmetries of the adsorbate complexes are discussed based on the specular and off-specular vibrational measurements. They suggest lower than ideal C(2v) and C(s) symmetries for on-top and end-bridge species, respectively. At low coverages the symmetry reductions might be lifted.     

Quantum chemical study of adsorption and dissociation of H2S on the gallium-rich GaAs (001)-4 x 2 surface

H(2)S adsorption and dissociation on the gallium-rich GaAs(001)-4 x 2 surface is investigated using hybrid density functional theory. Starting from chemisorbed H(2)S on the GaAs(001)-4 x 2 surface, two possible reaction routes have been proposed. We find that H(2)S adsorbs molecularly onto GaAs(001)-4 x 2 via the formation of a dative bond, and this process is exothermic with adsorption energy of 6.6 kcal/mol. For the first reaction route, one of the H atoms from the chemisorbed H(2)S is transferred to a second-layer As atom and the dissociated SH is inserted into the Ga-As bond with an activation barrier of 8.2 kcal/mol, which is found to be 29.3 kcal/mol more stable than the reactants. For the second case, the dissociated species may insert themselves into the Ga-Ga dimer resulting in the Ga-H-Ga and Ga-HS-Ga bridge-bonded states, which are found to be 29.8 and 22.2 kcal/mol more stable than the reactants, respectively. However, the calculations also show that the activation barrier (16.1 kcal/mol) for chemisorbed H(2)S dissociation through the second route is higher than the transfer of one H atom into a second-layer As atom. As a result, we conclude that sulfur insertion into the Ga-As bond is more kinetically favorable.     

Electronic effects induced by single hydrogen atoms on the Ge(001) surface

The properties of an isolated dangling bond formed by the chemisorption of a single hydrogen atom on a dimer of the Ge(001) surface are investigated by first-principles density functional theory (DFT) calculations, and scanning tunneling microscopy (STM) measurements. Two stable atomic configurations of the Ge-Ge-H hemihydride with respect to the neighboring bare Ge-Ge dimers are predicted by DFT. For both configurations, the unpaired electron of the HGe(001) system is found to be delocalized over the surface, rendering the isolated dangling bond of the hemihydride unoccupied. However, local surface charge accumulation, such as may occur during STM imaging, leads to the localization of two electrons onto the hemihydride dangling bond. The calculated surface densities of states for one of the charged Ge-Ge-H hemihydride configurations are found to be in good agreement with atomic-resolution STM measurements on n-type Ge(001). Comparison with a Si-Si-H hemihydride of the Si(001) surface shows similarities in structural properties, but substantial differences in electronic properties.     

First-principles study of the adsorption of cesium on Si(001)(2 x 1) surface

First-principles calculations based on density functional theory-generalized gradient approximation method have been performed on cesium adsorption on Si(001)(2 x 1) surface. The optimized geometries and adsorption energies have been obtained and the preferred binding sites have been determined for the coverage (Theta) of one monolayer and half a monolayer. At Theta = 0.5 ML the most stable adsorption site is shown to be T3 site. At Theta = 1 ML two Cs atoms are adsorbed at HH and T3 sites, respectively. It was found that the saturation coverage of Cs for the Si(001)(2 x 1)-Cs surface is one monolayer instead of half a monolayer. This finding supports the majority of experimental observations but does not support recent coaxial impact collision ion scattering spectroscopy investigations [Surf. Sci. 531, L340 (2003)] and He(+) Rutherford backscattering spectroscopy studies [Phys. Rev. B 62, 4545 (2000)]. Mulliken charge and overlap population analysis showed that the Cs-Si bond is indeed ionic rather than polarized covalent as generally assumed for alkali metal (AM) on Si(001)(2 x 1) surface. Geometrical structure analysis seems to have limitations in determining the nature of AM-substrate bond. We also found that the silicon surface is metallic and semiconducting for the coverages of 0.5 and 1 ML, respectively.     

Ab Initio molecular dynamics study of ethylene adsorption onto Si(001) surface: Short‐time fourier transform analysis of structural coordinate autocorrelation function

The reaction dynamics of ethylene adsorption onto the Si(001) surface have been studied by combining density functional theory‐based molecular dynamics simulations with molecular adsorption sampling scheme for investigating all kinds of reaction pathways and corresponding populations. Based on the calculated results, three possible reaction pathways—the indirect adsorption, the direct adsorption, and the repelling reaction—have been found. First, the indirect adsorption, in which the ethylene (C₂H_4(ads)) forms the π‐bonded C₂H_4(ads) with the buckled‐down Si atom to adsorb on the Si(001) surface and then turns into the di‐σ‐bonded C₂H_4(ads), is the major reaction pathway. The short‐time Fourier transform analysis of structural coordinate autocorrelation function is performed to further investigate the evolution of different vibrational modes along this indirect reaction pathway. This analysis illustrates that the Infrared (IR) inactive peak of the C?C stretching mode of the π‐bonded C₂H_4(ads) shifts to the IR inactive peak of the C? C stretching mode of di‐σ‐bonded C₂H_4(ads), which is in a good agreement with the IR inactive peak of the C?C stretching mode vanished in the vibrational spectrum at 150 K (Nagao et al., J. Am. Chem. Soc. 2004 , 126, 9922). Second, the direct adsorption, in which the di‐σ‐bonded C₂H_4(ads) is formed directly with the Si intradimer or the Si interdimer on the Si(001) surface, is the less significant reaction pathway. This reaction pathway leads to the C? C stretching mode and the C? H stretching mode of the di‐σ‐bonded C₂H_4(ads) appeared in the vibrational spectra at 48 and 150 K, respectively (Nagao et al., J. Am. Chem. Soc. 2004 , 126, 9922). Finally, the repelling reaction, in which the C₂H_4(g) first interacts with the Si dimer and then is repelled by Si atoms, is the least important reaction pathway. Consequently, neither the π‐bonded C₂H_4(ads) nor the di‐σ‐bonded C₂H_4(ads) is formed on the Si(001) surface. © 2013 Wiley Periodicals, Inc.