锗酸盐晶体压致非晶化的研究

高压拉曼散射研究表明．ＣｕＧｅＯ３，Ｌｉ２ＧｅＯ３和Ｌｉ６Ｇｅ２Ｏ７三种晶体分别在７，１２和１１ＧＰａ压力下转变为非晶。在高于起始转变压力以上一定范围压致非晶是可逆的，ＣｕＧｅＯ３，Ｌｉ２ＧｅＯ３和Ｌｉ６Ｇｅ２Ｏ７压致非晶的不可逆转变压力分别为１４．１，２０和２０ＧＰａ。压致非晶ＣｕＧｅＯ３的重新晶化温度在６００℃附近。锗酸及系列晶体的压致非晶化与它们的成份和结构有关，随着在这一系列晶体中Ｌｉ２Ｏ含量的增加，压致非晶化的压力趋于减小。     

晶体压致非晶化的拉曼散射研究

本文主要介绍压致非晶化研究的进展，其中包括我们对β—ＢａＢ＿２Ｏ＿４，ＬｉＢ＿３Ｏ＿５，Ｐｂ＿５Ｇｅ＿３Ｏ＿１１和Ｌｉ＿２Ｇｅ＿７Ｏ＿（１５）的拉曼散射研究结果。综述了压致非晶的结构特征，压致非晶转变机制和重新晶化过程。     

锗酸铜晶体压致非晶化的研究

High-pressure Raman spectra of copper metagermanate(CuGeO3) are presented,.Above 70 kbar copper metagermanate becomes amorphous,in the range of 70-125 kbar the transition is veversible,above 141 kbar is irreversible.The recrystallization process of pressure-induced amorphous state were investigated.     

锗酸铜晶体压致非晶化的研究

锗酸铜晶体压致非晶化的研究蓝国样，李玉栋，徐勇卫（南开大学物理系天津３０００７１）Ｐｒｅｓｓｕｒｅ－ＩｎｄｕｃｃｄＡｍｏｒｐｈｉｚａｏｎｏｆＣｏｐｐｅｒＭｅｔａｇｅｒｍａｎａｔｅＣｒｙｓｔａｌ￥ＧｕｏｘｉａｎｇＬａｎ；ＹｕｄｏｎｇＬｉａｎｄＹｏｎｇｗ...     

新型压电晶体四硼酸锂

 图为82毫米直径的新型压电晶体四硼酸锂.该新材料兼具高机电耦合系数和零延迟温度系数的特点,适用于高频、高稳定度和小型化的声表面波器件的制造,成为电子工业材料中的新秀.它的SAM器件(图右)应用于移动通讯装备上,如寻呼机、汽车电话、无线电话、家用袖珍电话等.九十年代移动通讯将成为信息社会中不可缺少的通讯工具.中国科学院上海硅酸盐所在国际上首创它的新生长技术并发展了其宏观完整生长理论,为四硼酸锂产业化生产奠定了坚实的技术基础.     

硼酸锂系列晶体的高压拉曼散射研究

本文进行了硼酸锂系列晶体的高压拉曼散射及其压致相变的研究。对于三硼酸锂（ＬｉＢ３Ｏ５），我们发现在５．０ＧＰａ有一可逆的晶态到晶态的相变，在２７．０ＧＰａ有一不可逆的晶态到非晶态的相变。二硼酸锂（Ｌｉ２Ｂ４Ｏ７）不可逆压致非晶相变发生在３２．０ＧＰａ附近。对于一硼酸锂，我们研究了０—５５．８ＧＰａ范围内的高压拉曼光谱，只在２．０ＧＰａ发现了一个晶态到晶态的相变，但未发现不可逆压致非晶化现象。在硼酸锂系列晶体中，不可逆压致非晶化的压力随Ｌｉ２Ｏ的含量的增加而升高。硼酸锂晶体中Ｌｉ２Ｏ的含量越高，压致非晶化越不容易发生，这与熔体急冷法制备硼酸锂玻璃的规律是一致的。     

压致硼酸盐晶态物质的非晶化现象研究

 本文用X射线衍射、Eu²⁺的发射谱与激发谱、拉曼谱以及扫描电镜（SEM）颗粒形貌，研究了常压下合成的具有正交结构的SrB₂O₄:Eu²⁺晶体在3.0~7.0 GPa压力下的晶态非晶化现象。分析结果表明，压力导致晶粒细化和晶态非晶化。晶粒尺寸由常压下的微米量级细化为几十个纳米量级，随压力的变化为：2 μm（0.1 MPa），49.4 nm（3.0 GPa），29.7 nm（5.0 GPa），25.1 nm（7.0 GPa）。晶态与非晶态体积比随压力增加而减小，分别为：70/30（3.0 GPa），63/37（5.0 GPa），57/43（7.0 GPa）。在压力下Eu²⁺是处在晶态与非晶态两种不同的低对称的环境中。纳米级晶粒是以亚晶粒形式存在于微米级大晶粒中的，压致非晶态可能组成了纳米亚晶粒的界面区。     

三硼酸铯和硼酸铯锂晶体的晶格振动光谱研究

本文对新型非线性光学晶体三硼酸铯（ＣｓＢ３Ｏ５∶ＣＢＯ）和硼酸铯锂（ＣｓＬｉＢ６Ｏ１０∶ＣＬＢＯ）进行了晶格振动光谱研究。首先对两种晶体的基本晶格振动模进行了对称性分类,记录了两种晶体低温下的拉曼光谱和室温下的红外反射光谱,对晶体的晶格振动模进行了认定,将振动模归属于平面六元环（Ｂ３Ｏ６）和四面体（ＢＯ４）。然后比较了ＣＢＯ,ＣＬＢＯ和ＬＢＯ（ＬｉＢ３Ｏ５）三种晶体的晶格振动光谱,讨论了阳离子对振动光谱的影响。另外,还讨论了硼酸盐晶体晶格振动模ＬＯ ＴＯ分裂的大小与晶体非线性光学系数之间的关系。     

三硼酸锂晶体的多光子散射

本文报道三硼酸锂(LBO)晶体的瞬态前向相干多光子散射,实验表明LBO晶体内部同时发生x~(2)和x~(3)非线性相互作用过程,而未发现光耦合效应,测量了LBO晶体的光栅寿命上限.     

Pressure-Induced Changes in Parameters of the Indicatrix of Lithium Sodium Sulfate Crystals

Optics and Spectroscopy - Spectral, temperature, and baric dependences of birefringence Δni of LiNaSO4 (LSS) crystals have been studied. It is established that dispersion Δn(λ) is...     

Amorphisation in solid metallic systems

The formation of amorphous alloys by a solid state reaction without any rapid quenching is reviewed. The crystal to glass transition is driven by the large negative heat of mixing of the crystalline reactants. Kinetic constraints assure the formation of an amorphous phase instead of the crystalline equilibrium phases. A comparison with other recently developed methods, like ion beam mixing, and a comparison of some physical properties between differently prepared amorphous alloys of the same composition are given.     

Pressure-Induced Spin-Crossover in EuFeO3

Hyperfine Interactions - EuFeO3 perovskite has been studied by using 57Fe Mössbauer effect and X-ray diffraction under pressures up to 90 GPa and in the temperature range of 4.2–300 K. A...     

Amorphisation of GaN during processing with rare earth ion beams

GaN epilayers grown by metal organic chemical vapor deposition (MOCVD) were implanted with Tm and Eu ions with different energies and fluences and at different temperatures in order to optimize the implantation conditions. The recovery of the implantation damage was studied using both rapid thermal annealing and furnace annealing with nitrogen overpressure of 4×10⁵ Pa. Rutherford backscattering spectrometry in the channeling mode (RBS/C) was used to monitor the evolution of damage introduction and recovery in the Ga-sublattice and transmission electron microscopy (TEM) was carried out for further structural analysis. The RBS/C spectra as well as TEM images show two different damage regions, one at the surface arising from an amorphous surface layer and another one deeper in the crystal coinciding with the end of range of the implanted ions. For implantation with 150 keV at room temperature, even for fluences as low as 3×10¹⁴ at/cm², a thin amorphous surface layer, which becomes thicker with increasing implantation fluence, was observed by TEM. High temperature annealing of these highly damaged layers often results in loss of the amorphous layer and accumulation of the implanted species at the surface rather than a regrowth of the crystal. It was possible to prevent the formation of an amorphous layer by implanting at 500 C. In those samples a large part of the lattice damage was removed during annealing at 1000 C and the recovery of the lattice is similar for both applied annealing methods.     

Pressure-Induced Phase Transition of Ruthenium Diboride

Based on the first-principles calculations, we firstly predict that RuB2 undergoes a phase transition from the orthorhombic phase to the hexagonal phase with a volume collapse of 1% when the applied pressure is 15. 7 GPa. The values of calculated elastic moduli indicate that RuB2 and RuN2 are low compressibility materials. Based on the calculated electronic density of states and valence charge density distribution, the bonding nature of RuB2 is examined to obtain a deeper insight into the physical origin of the mechanical properties. The metallieity and high elastic moduli of RuB2 and FuN2 suggest that they axe potential hard conductors.     

ZnS:Eu纳米晶的高压相变研究

采用同步辐射能量色散X射线衍射技术和金刚石对顶砧高压装置,对ZnS:Eu纳米晶进行了原位高压X光衍射实验.最高压力为30.8Pa.当压力为11.5GPa时,ZnS:Eu发生了一次从纤锌矿到闪锌矿的结构相变.在压力为16.0GPa时,又发生了明显的结构相变,相变后的结构为岩盐矿,其相变压力较体材料高.得到了Birch-Murnaghan状态方程、ZnS:Eu纳米晶的体模量和压力导数.ZnS:Eu纳米晶的体模量高于体材料的值,表明纳米材料较体材料的硬度高.     

Pressure-Induced Ionic-Electronic Transition in BiVO_4

Electrical transport properties of bismuth vanadate(BiVO_4) are studied under high pressures with electrochemical impedance spectroscopy. A pressure-induced ionic-electronic transition is found in BiVO_4. Below 3.0 GPa, BiVO_4 has ionic conduction behavior. The ionic resistance decreases under high pressures due to the increasing migration rate of O~(2-)ions. Above 3.0 GPa the channels for ion migration are closed. Transport mechanism changes from the ionic to the electronic behavior. First-principles calculations show that bandgap width narrows under high pressures, causing the continuous decrease of electrical resistance of BiVO_4.     

New Pressure-Induced Phase Transitions in Bismuthinite

JETP Letters - The study of the effect of high pressure and high temperature on the crystal structure of Bi2S3 has revealed that Bi2S3 decays chemically at p = 6–8 GPa and T =...