Semiconducting properties of CoO thin films

This paper reports electrical properties of CoO thin films of different thickness in the range 0.375 – 7.95 μm. Both electrical conductivity and thermopower were measured at elevated temperatures (1223 – 1423 K) and under controlled oxygen partial pressure (5 − 2.1x10⁴ Pa). It was found that at low p(O₂) the electrical conductivity decreases with film thickness. The activation energy of the electrical conductivity (E_a) in air decreases with the oxide thickness from 0.56 eV at 0.375 μm to 0.52 eV for massive CoO while at low p(O₂)=5 Pa the E_a is independent of the thickness (E_a = 0.46 eV). The reciprocal of the p(O₂) exponent of the electrical conductivity (n_δ) in the range 1223 K – 1373 K is close to four for the 7,95 μm film and is about 3.5–3.7 for the 0.375 μm film. The electrical properties of the CoO thin films are considered assuming different defect structures in the bulk phase and the surface layer.     

Study of complex impedance spectroscopic properties of the KFeP2O7 compound

The KFeP₂O₇ compound was prepared by the conventional solid-state reaction. The sample was characterized by X-ray powder diffraction. The AC electrical conductivity and the dielectric relaxation properties of this compound have been investigated by means of impedance spectroscopy measurements over a wide range of frequencies and temperatures, 200 Hz–5 MHz and 553–699 K, respectively. Both impedance and modulus analysis exhibit the grain and grain boundary contribution to the electrical response of the sample. The temperature dependence of the bulk and grain boundary conductivity were found to obey the Arrhenius law with activation energies Eg?=?0.94 (3)?eV and Egb?=?0.89 (1)?eV. The grain-and-grain boundary conductivities at 573 K are 1.07?×?10^?4 and 1.16?×?10^?5 (Ω^?1 cm^?1). The scaling behavior of the imaginary part of the complex impedance suggests that the relaxation describes the same mechanism at various temperatures. The near value of the activation energies obtained from the equivalent circuit, conductivity data, and analysis of M″ confirms that the transport is through ion hopping mechanism.     

Electronic conductivity and thermopower of Ca2NaMg2V3O12−x garnet

Results are reported from conductivity and thermoelectric power measurements on partially reduced Ca₂NaMg₂V₃O_12?x, with x < 5.10^?2, at temperatures of 300–1100 K. The conductivity is thermally activated with activation energies 0.26 ? E_a ? 1.28 eV for differently reduced samples. The thermopower is temperature independent in the 300–800 K region. These results are shown to be consistent with the adiabatic hopping of small polarons localised on the vanadium sublattice, where defect interactions result in the formation of multiple conduction pathways.     

CeAlO<Subscript>3</Subscript> crystals: Preparation and study of their electrical and optical characteristics

Crystals of cerium aluminate with perovskite structure were obtained using the cold-crucible technique. The electrical and optical properties of cerium aluminate were studied in air in the range 300–1300 K. The main characteristics of CeAlO₃ at T=300 K are a follows: electrical conductivity σ=10^?7 S/cm, dielectric permittivity ?=3000–10000 (both measured at a frequency of 1000 Hz), thermal band-gap width ΔE=2.3±0.5 eV, and optical width δE=2.65±0.25 eV, which decreases at a rate of ?0.62×10^?3 eV/K with increasing temperature in the 300-to 1500-K interval.     

Accelerated life ac conductivity measurements of CRT oxide cathodes

The ac conductivity measurements have been carried out for the activated Ba/SrO cathode with additional 5% Ni powder for every 100 h acceleration life time at the temperature around 1125 K. The ac conductivity was studied as a function of temperature in the range 300-1200 K after conversion and activation of the cathode at 1200 K for 1 h in two cathodes face to face closed configuration. The experimental results prove that the hopping conductivity dominate in the temperature range 625-770 K through the traps of the WO₃ associate with activation energy E_a = 0.87 eV, whereas from 500-625 K it is most likely to be through the traps of the Al₂O₃ with activation energy of E_a = 1.05 eV. The hopping conductivity at the low temperature range 300-500 K is based on Ni powder link with some Ba contaminants in the oxide layer stricture which indicates very low activation energy E_a = 0.06 eV.     

Magnetic susceptibility and electrical conductivity of transition-metal platinum oxides: Evidence for one-dimensional electronic interactions

Bulk magnetic susceptibility measurements have been made on the orthorhombic compounds CoPt₃O₆, MnPt₃O₆, and NiPt₃O₆, and the structurally related cubic phase Co_0.37Na_0.14Pt₃O₄, in the temperature range 300-4 K. These compounds, which are rather unusual in that they contain first-row transition metals in eight coordination, are all paramagnetic above 25 K and show Curie-Weiss behavior with effective magnetic moments μ_eff(Co) = 4.8 ± 0.2μ_B,μ_eff(Mn) = 5.8 ± 0.1 μ_B, μ_eff(Ni) = 3.9 ± 0.2 μ_B, and μ_eff(Co) = 4.2 ± 0.5 μ_B, respectively. The inverse susceptibilities of CoPt₃O₆ and MnPt₃O₆ exhibit deviations from Curie-Weiss behavior below 25 K, and a minimum is observed for CoPt₃O₆ at about 8K. Single-crystal electrical conductivity measurements along the c-axis (σ_∥) in CoPt₃O₆ and MnPt₃O₆ show these materials to be semiconducting, but with relatively high conductivities and low activation energies σ_∥ (294 K) = 40 Ω^?1-cm^?1 and E_a = 0.07 eV for CoPt₃O₆ and σ_∥ (303 K) = 111Ω^?1cm^?1 and E_a = 0.02 eV for CoPt₃O₆. The results for CoPt₃O₆. MnPt₃O₆, and NiPt₃O₆are discussed in terms of their anisotropic structures, which favor magnetic coupling in one-dimension along linear arrays of eight-coordinated paramagnetic ions and one-dimensional electrical conduction along columnar stacks of planar PtO₄ groups containing partially oxidized linear chains of platinum. One-dimensional electronic interactions in MPt₃O₆ compounds are suggested by metal-metal distances along the c-axis of 3&#x0303;.1 A for both the platinum and the 3d transition metal ions, compared to a distance of 6.1 A between the chains in the perpendicular plane. These materials and their electronic properties are compared with systems with well characterized examples of one-dimensional magnetic coupling and electrical conductivity.     

The temperature dependence of optical gap and photoconductivity threshold in undoped hydrogenated amorphous silicon films

We report on the temperature dependences of the optical gap E_o and the photoconductivity threshold (?ω)_o for undoped hydrogenated amorphous silicon films. When increasing the temperature, both E_o and (?ω)_o are seen to linearly decrease at respective rates β= 3.5 10^?4 eV K^?1 (temperature range 290 K–460 K) and γ= 5.2 10^?4 eV K^?1 (temperature range 220 K – 360 K). At higher temperatures E_o decreases at the rate β = 14.3 10^?4 ev K^?1. Our results are discussed in terms of conduction in extended states. We show there is no physical reason in relating the temperature dependence of the activation energy and that of the gap as generally assumed. From optical absorption we deduce a minimum metallic conductivity σ_min the value of which agrees with Mott's predictions. On the contrary, σ_min measured from dark conductivity is nearly two orders of magnitude lower. A discussion is proposed infering band bending at the film substrate interface.     

Ionic conductivity and NMR relaxation study on Li3N single crystal

Both ionic conductivity and ⁷Li NMR relaxation time T₂ were studied on Li₃N single crystal samples containing an oxygen impurity. Owing to the O impurity, the samples showed a high ionic conductivity (σ⊥ = 0.83 S m^?1 and σ_∥= 0.013 S m^?1 at 300 K) and a low activation energy (E_a,⊥ = 0.19 eV and E_a,∥ = 0.24 eV). The intrinsic conduction accompanying vacancy generation within the Li₂N layer was observed in the high temperature region. In the extrinsic region only a motion of the Li ion located in the Li₂N layer is responsible for both σ_⊥ and σ_∥. The site exchange motion of two kinds of Li ion has little importance to the ionic conduction.     

Electrical conductivity of magnesium oxide single crystal below 1200 K

Using 2-, 3- and 4-electrodes configurations the direct current conductivity of MgO single crystals of nominally highest purity (with respect to cation impurities), grown by arc-fusion, was studied in argon or oxygen between 500–1200 K with special reference to both hysteresis effects during heating and cooling cycles and conductivity phenomena which occur underneath the surface in a thin subsurface zone. The samples contained 250–2500 at.-ppm carbon and typically 800 at.-ppm hydrogen.Below 1000 K the low temperature (LT) conductivity mechanism is characterized by an activation energy of 1.1 ± 0.2eV, distinctly lower than that of the high temperature region (HT) approximately 2.4 eV. By annealing at 300 K the LT mechanism progressively builds up and causes a very pronounced conductivity increase between 700–900 K, unaffected or even enhanced by O₂. Above 900 K, O₂ decreases the conductivity.The LT mechanism is proposed to be due to defect electrons on anion sites corresponding to O^? in the O^2? structure which are a consequence of the presence of carbon and hydrogen dissolved in the MgO and formally derived from the dissolution of traces of CO₂ and H₂O [J. Chem. Phys. Solids43, 129 (1982)].The dissolved carbon is known to segregate into the elastically relaxed subsurface zone (J. Chem. Phys. Solids43, 59 1982). The conductivity data suggest that between 700–900 K, defect species of C + 2O^?, the dipolar CO^?₂, which become strongly enriched in the subsurface zone upon annealing at 300 K, dissociate according to the equation CO₂^2?→CO^? + O^?, thus generating the defect electrons responsible for the LT mechanism.     

Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Electrical conductivity and fundamental absorption spectra of monocrystalline Cu₇GeS₅I were measured in the temperature ranges 95-370 and 77-373 K, respectively. A rather high electrical conductivity (σ_t=6.98×10⁻³Ω⁻¹ cm⁻¹ at 300 K) and low activation energy (ΔE_a=0.183 eV) was found. The influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu₇GeS₅I, Cu₆PX₅I (X=S,Se) and Ag₇GeX₅I (X=S,Se) compounds. We have concluded that the P→Ge and Cu→Ag cation substitution results in an increase of the electrical conductivity and a decrease of the activation energy. Besides, P→Ge substitution, results in complete smearing and disappearance of the exciton absorption bands and in blue shift of the Urbach absorption edge, an increase of the edge energy width and an electron-phonon-interaction enhancement.     

The average structure of 5.10-Dihydro-5.10-Diethylphenazinium-Iodide (E2P·I1.6): A new linear chain Polyiodide compound

Upon oxidation of 5.10-dihydro-5.10-diethylphenazine (E₂P) with iodine golden-green lustrous crystals of a compound with stoichiometry E₂P.I_1.6 were isolated. The compound crystallizes in the tetragonal space group D₄² with $\text{a = 12.321(2)}\text{A}\text{?}$ and $\text{c = 5.330(2)}\text{A}\text{?}$. The E₂P and I form interpenetrating incommensurate sublattices along c, with an iodine repeat distance of 9.7 Å. Static susceptibility measurements at room temperature give χ_g = + 0.994 × 10^?6g^?1 × cm³. This corresponds to one unpaired electron spin per two formular units. Single-crystal EPR indicates that the paramagnetism is associated with weakly interacting E₂P⁺ cation radicals. The 300K-d.c. conductivity of 3×10^?2Ω^?1cm^?1 and activation energy of 0.17±0.02eV for single crystals is consequently associated with the polyiodide chains, and not with the E₂P⁺ cation radicals.     

Specific features of the behavior of optical properties upon the metal-insulator transition in EuBaCo<Subscript>2</Subscript>O<Subscript>5+δ</Subscript>

The temperature dependences of the optical properties and the electrical resistivity for EuBaCo₂O_5+δ single crystals are investigated. At temperatures below the metal-insulator transition (T _MI = 340 K), the electrical resistivity is well approximated by the relationship ρ = ρ₀exp(T/T ₀)^1/4. The optical band gap E _g = 0.05 eV for the insulating phase is underestimated as compared to the theoretical value. The specific features in the dispersion of the optical conductivity and the real part of the complex permittivity upon the metal-insulator transition are determined. It is demonstrated that the optical response from charge carriers on the metal side of the metal-insulator transition is caused by the redistribution of the spectral weight of the optical conductivity from the high-energy range to the low-energy range and exhibits a strongly incoherent character. The revealed features are associated with the manifestation of the strongly correlated metallic state.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Structure and electrical conductivity of ultrathin Ni-Cu films

The structure, phase composition, morphology, and electrical conductivity of Ni-Cu alloy ultrathin films having a thickness of d = 1?10 nm and a Cu concentration of 10–95 at % have been studied. All films are shown to be fcc Ni-Cu alloys; they have an island structure with an island size of 1.5–2 nm in the as-deposited films and of about 20 nm in the films annealed to 700 K. The electrical conductivity of the films depends on their thickness and morphology. For films with d ≈ 1 nm, the electrical conductivity is thermally activated with an activation energy E _a ≈ 0.086?0.095 eV. Films with d > 3 nm exhibit the metallic temperature dependence of electrical conductivity with a positive temperature coefficient of resistivity.     

Helium defectoscopy of cerium gadolinium ceramics Ce0.8Gd0.2O1.9 with a submicrocrystalline structure in the impurity disorder region

The concentration of impurity anion vacancies formed upon the dissociation of gadolinium-vacancy complexes has been determined using helium defectoscopy of the cerium gadolinium ceramics Ce_0.8Gd_0.2O_1.9 with a submicrocrystalline structure in the temperature range T = 740–1123 K and at saturation pressures ranging from 0.05 to 15 MPa. It has been found that the energy of dissociation of gadoliniumvacancy complexes is E _eff ^D = 0.26 ± 0.06 eV, and the energy of dissolution of helium in anion vacancies in the impurity disorder region is E ^P = ?0.31 ± 0.09 eV. The proposed mechanism of dissolution has been confirmed by the investigation of the electrical conductivity of the cerium gadolinium ceramics, as well as by the high-speed molecular dynamics simulation of the dissociation of gadolinium-vacancy complexes. It has been assumed that a decrease in the effective dissolution energy in comparison with the results of the previously performed low-temperature investigations is caused by the mutual repulsion of vacancies formed upon the dissociation of gadolinium-vacancy complexes in highly concentrated solutions of gadolinium in CeO₂ with increasing temperature.     

Effect of CuO addition on the optical and electrical properties of sodium zinc borophosphate glasses

Sodium borophosphate glasses doped with copper ions having general composition 20Na₂O-20ZnO-25B₂O₃-(35-x) P₂O₅-x CuO (x=1-8 mol %) were prepared using conventional melt-quench method and characterized by density, UV-visible optical absorption, photoluminescence and conductivity measurements. E_optical values for different glass samples are found to decrease systematically from 3.5 to 2.5 eV with increase in CuO content in the glass. Network modifying action of CuO with the glass network has been confirmed from the UV-visible optical absorption studies. Presence of Copper in the form of Cu⁺ species has been confirmed from photoluminescence measurements. The electrical conductivity (σ) increases with increase in copper oxide content in the glass and temperature dependence of electrical conductivity confirmed the semiconducting nature of the samples.     

Negative Ions,Ozone, and Metastable Components in dc Oxygen Glow Discharge

In a dc glow discharge in oxygen, the concentrations of minor components of O₂(a¹Δ_g), O₂(b¹ Σ_g), O₃, O(¹D), as well as nagative ions and electrons have been measured. Balance equations have been derived which describe satisfactorily the stationary concentrations of these components as functions of gas pressure and discharge current. For the first time, the rate constants of important aeronomical reactions (a) O^? + O₂(a¹Δ_g) → O₃ + e, (b) O₂^? + O₂(a¹Δ_g) → 2O₂ + e and (c) e + O₃ → O₂^? +O have been measured as functions of gas temperature T and mean energies of ions E_i and electron E₆: K_a = (2.5 ± 0.5) · 10^?9 · (T/300)^{4 ± 0.4}· (E_i/0.04)^{?2.6 ± 0.4} cm³/s for T = 385?605 K and E_i = 0.10 ? 0.66 eV; K_b = (1.0 ± 0.3) · 10^?10 · (T/300)^{?2 ± 0.5} · (E_i/0.04)^{0.23 ± 0.05} cm³/s for T = 330?605 K and E_i = 0.09 + 1.5 eV; K_c for E_e = 0.8÷5 eV.     

Electronic and ionic conductivities and point defects in ytterbium sesquioxide at high temperature

From the study of complex impedance diagrams applied to a symmetric cell Pt-Yb₂O₃-Pt, the authors have shown the mixed character of electrical conduction within the ytterbium sesquioxide. The measurements were performed at thermodynamic equilibrium in the temperature range from 1423 to 1623 K and the partial pressure of oxygen range from 10^?12 to 1 atm. The variations of ionic and electronic conductivity as a function of P_O2, were interpreted in terms of point defects e′, ?, V?_Yb and Yb_{$\text{I}\text{?}$}, in the general case of a Frenkel disorder. The relative contributions and the activation energies of conduction of these different defects were determined.     

The chemical stability and conductivity improvement of protonic conductor BaCe0.8 − x Zr x Y0.2O3 − δ

A series of BaCe_0.8???x Zr _x Y_0.2O_3???δ (BCZYx) (x?=?0, 0.2, 0.4, 0.6, 0.8) powders were prepared by EDTA–citrate complexing sol–gel process in this paper. The electrical conducting behavior, as well as chemical stability, was investigated. X-ray diffraction (XRD) results reveal that all samples are homogenous perovskite phases. Observed from XRD patterns and thermogravimetric curves, the samples with x?≥?0.4 survive in the pure CO₂, while samples with various Zr contents all present structurally stable against steam at 800 °C. The Zr-free sample of BaCe_0.8Y_0.2O_3???δ possesses the maximum bulk conductivity, 4.25?×?10^?2 S/cm, but decomposes into Ba(OH)₂ and Ce_0.8Y_0.2O_3???δ in steam. A negative influence of increasing Zr content on the conductivity of BCZYx can be observed by impedance tests. Considering the effect of temperature on the bulk conductivity, BCZY0.4 is preferred to be applied in SOFC as a protonic conductor, ranging from 1.52?×?10^?4 to 1.51?×?10^?3 S/cm (500–850 °C) with E _a?=?0.859 eV, which is proved to be a good protonic conductor with t _H+?≥?0.9.