Excitation intensity dependence of shallow donor bound exciton luminescence in n-GaAs

Luminescence measurements were performed on high purity epitaxial n-GaAs $\text{(}\text{1 × 10}{}^{14}\text{cm}{}^3\text{< n <}\text{3 × 10}{}^{15}\text{cm}{}^3\text{)}$ for various excitation intensities I₀ in the range $\text{8 mW}\text{cm}{}^2\text{< I}{}_0\text{<}\text{4 W}\text{cm}{}^2$. The luminescence line corresponding to the radiative decay of the shallow donor bound exciton, (D⁰, X), broadens with increasing I₀ and appears as a doublet for $\text{I}{}_0\text{? 1}\text{W}\text{cm}{}^2$, while the two-electron replica of the (D⁰, X) remains a single narrow line. The doublet structure of the (D⁰, X) at elevated excitation levels is due to missing luminescence intensity in the center of the line as a consequence of low (D⁰, X) concentration in a layer extending 1–2 μm from the sample surface into the bulk. The low concentration of (D⁰, X) is attributed to capture of (D⁰, X) quanta into surface states, extending to lower energies from the Fermi level fixed by the shallow donors. Comparison of the present results with luminescence spectra obtained by various authors reveals, that unexplained spectral features in the (D⁰, X) region of n-GaAs reported in the literature are a consequence of high excitation intensity and correspond to the effect reported here. In partly compensated p-GaAs with donor concentrations as given above, the (D⁰, X) did not transform into a doublet structure even at $\text{W}\text{cm}{}^2$ excitation intensity.     

Stark broadening of sodium lines emitted by a sodium argon mixture plasma

Stark-broadened sodium line have been observed from a sodium-argon mixture plasma. Comparison between measured and theoretical$\text{3}{}^2\text{P}{}^0\text{? n}{}^2\text{D}\text{(n = 4, 5, 6)}$ line profiles indicates agreement within 10%. The temperature and electron density in the sodium emission region are 4500 K and 4.2 × 10¹⁵cm^-3 respectively.     

Ordered steps on Bi(∼ 0001) vicinal surfaces by laser pulse anneal

LEED patterns characteristic of an ordered array of equally spaced steps of minimum height resulted from pulsing disordered Bi(～ 0001) vicinal surfaces. Ten XeCl eximer laser pulses at λ = 308 nm, of 10 ns duration and $\text{4 mJ}\text{cm}{}^2$ each and at 0.5 s intervals optimized ordering on the Bi(101&#x0304;16) surface, but additional exposure degraded the surface crystallinity as did a twentyfold increase in power density.     

Frequency dependence of cyclotron resonance in si inversion layers in the region of activated conductivity

Cyclotron resonance of electrons in a Si MOSFET has been studied at a number of far infrared laser frequencies and at surface electron densities down to 3 × 10 cm^?2 in the activated conductivity regime. The scattering rate exhibits $\text{B}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$ behavior for ωτ > 2 as in the metallic regime. Effective masses obtained from the fits are found to increase with decreasing density at frequencies $\text{V}\text{?}\text{? 25}\text{cm}{}^{\mathrm{?1}}$. It is possible that this continued evidence of metallic-like behavior is due to the fact that the photon energy is larger than the DC activation energy at these densities.     

Surface temperature modulation in molecular beam relaxation spectrometry applied to catalytic decomposition of CH3OH on NiO

A new modification of molecular beam relaxation spectrometry (MBRS) of surface processes is described making use of partial modulation in order to study nonlinear processes: a constant particle beam is directed towards the catalyst surface, the surface temperature is modulated due to absorption of a modulated beam of UV light, reaction products are analyzed by use of phase sensitive mass spectrometric detection. The application of the method is shown by a study of catalytic decomposition of methanol on polycrystalline NiO. Formation of CO was found to be a monomolecular, formation of H₂ and H₂O bimolecular processes. The resulting mechanism may be described as follows:

Rate constants in dependence from surface temperature T₀ are η = 1.8 × 10³$\text{exp(?}\text{46}\text{RT}{}_{\mathrm{o}}\text{kJ}\text{mol}\text{)}$; k_d1 = 1.8 × 10¹⁰$\text{exp(?}\text{92}\text{RTl}{}_0\text{kJ}\text{mol}\text{)}$ s^?1; k_d2 = 1.2 × 10^?2$\text{exp (?}\text{88}\text{RT}{}_0\text{kJ}\text{mol}\text{)}$ cm² particles^?1 s^?1; k_d3 = 3.5 × 10^?4$\text{exp(?}\text{88}\text{RT}{}_0\text{kJ}\text{mol}\text{)}$ cm² particles^?1 s^?1. Average surface residence times of the intermediates are: $\text{27 ?}{}^{\mathrm{\tau }}\text{HCO}\text{}\text{?}\text{1 ms}$ at 550 ? T₀ ? 650 K; $\text{42 ?}{}^{\mathrm{\tau }}\text{H ? 7 ms}$ at 540 ?T₀ ? 610 K; $\text{177 ?}{}^{\mathrm{\tau }}\text{OH ? 19 ms}$ at 550 ? T₀ ? 645 K.     

The ground state of methane 12CH4 through the forbidden lines of the ν3 band

High resolution spectra of the ν₃ band of methane, ¹²CH₄, were recorded by using a “third generation vacuum Fourier interferometer”; a large pressure range (from 0.009 to 10 Torr) with a sample path fixed at eight meters was used, enabling observation of transitions with intensity ratios as low as $\text{1}\text{10 000}$. More than 350 forbidden transitions of the ν₃ band, including about 125 transitions of the Q⁺ branch, were unambiguously identified. Of the 277 transitions retained for computations, one-hundred have 11 ≤ J ≤ 16. From combination difference relations using pairs of transitions having the same upper state energy level (forbidden-allowed and forbidden-forbidden pairs were used), 276 independent differences between ground state energy levels could be determined with uncertainties of about 0.001 cm^?1.These data yielded the following values for the ground state structure constants of ¹²CH₄ along with their standard deviations (in cm^?1): $\text{β}{}^{\mathrm{o}}\text{hc}\text{=5.2410356±0.0000096}$, $\text{γ}{}^{\mathrm{o}}\text{hc}\text{=(?1±0.00074) 10}{}^{\mathrm{?4}}$, $\text{π}{}^{\mathrm{o}}\text{hc}\text{=(5.78±0.18) 10}{}^{\mathrm{?9}}$, $\text{?}{}^{\mathrm{o}}\text{hc}\text{=(?1.4485±0.0023) 10}{}^{\mathrm{?6}}$, $\text{?}{}^{\mathrm{o}}\text{hc}\text{=(1.768±0.126) 10}{}^{\mathrm{?10}}$, $\text{ξ}{}^{\mathrm{o}}\text{hc}\text{=(?1.602±0.067) 10}{}^{\mathrm{?11}}$, Thus, for the first time, the scalar constant π⁰ has been evaluated and ir values have been obtained for the two tetrahedral constants ?⁰ and ξ⁰; furthermore, these values are in very good agreement with the ones recently determined from radiofrequency data, i.e., in cm^?1: $\text{?}{}^{\mathrm{o}}\text{hc}\text{=(?1.45061±0.00014) 10}{}^{\mathrm{?6}}$, $\text{?}{}^{\mathrm{o}}\text{hc}\text{=(1.7634±0.0068) 10}{}^{\mathrm{?10}}$, $\text{ξ}{}^{\mathrm{o}}\text{hc}\text{=(?1.5432±0.0040) 10}{}^{\mathrm{?11}}$ From these values, the 276 differences can be reproduced with an overall rms deviation equal to 0.0009 cm^?1.Finally, the ground state energies of ¹²CH₄ have been calculated for J ≤ 16.     

A study of valency changes of vanadium ions in Al2O3 by γ irradiation

The effect of γ irradiation at 300 K on the concentrations of vanadium ions V³⁺, V⁴⁺ and V²⁺ in Al₂O₃ has been studied quantitatively, using three techniques: optical absorption (V³⁺), low temperature thermal conductivity measurements (V⁴⁺) and EPR (V²⁺). Several single crystals of Al₂O₃ doped with vanadium in a large range of concentration $\text{(2.8 × 10}{}^{18}\text{? 1.3 × 10}{}^{20}\text{at.}\text{cm}{}^3\text{)}$ have been measured. The evolution of the respective concentrations by γ irradiation as a function of the total vanadium content C is quite different in the two regions $\text{C< 1.2 × 10}{}^{19}\text{at.}\text{cm}{}^3$ and C larger than this value. A consistent analysis of the results has nevertheless been achieved, leading to the determination of the absolute concentrations of the three ions in the as-received and γ irradiated states for all samples with $\text{C<4.2 × 10}{}^{19}\text{at.}\text{cm}{}^3$ (room temperature annealing is observed above this value). The concentrations of V⁴⁺ and V²⁺ ions are always small, but V⁴⁺ ions are more stable: they are present in the as-received state at a level of 1% of the total concentration and a maximum value of $\text{/}\text{?}\text{2.3 × 10}{}^{18}\text{at.}\text{cm}{}^3$ is observed in the γ irradiated state; on the other hand there are less than 4.7 × 10¹⁵V²⁺ ions per cm³ in the as-received state and the maximum value is only $\text{4.2 × 10}{}^{17}\text{at.}\text{cm}{}^3$. Charge transfer between V ions only is not sufficient to explain the experimental results and other defects must be involved in the γ irradiation effect.     

Rotation-vibration analysis of the Coriolis-coupled ν5g, ν6g, ν8g and ν9 bands of H2CCO

Medium resolution infrared grating spectra of gaseous ketene, H₂CCO were recorded between 1000 and 400 cm^?1, both at instrument temperature (40°C) and with cooling (?40°C). Interferometric Fourier spectra were also measured at ?70°C with resolution 0.22 cm^?1 between 450 and 330 cm^?1. The K structure of the fundamentals ν₅, ν₆, ν₈, and ν₉ was assigned. These fundamentals are coupled by a-axis Coriolis interactions. These couplings were analysed on the symmetric top basis for setting up the perturbation matrix and by utilizing the K-dependent Coriolis shifts of levels. A preliminary analysis of the Coriolis intensity anomalies was also undertaken.Band center values from combination differences are $\text{ν}{}_5{}^0\text{= 587.30 (27)}$ and $\text{ν}{}_6{}^0\text{= 528.36 (39)}\text{cm}{}^{\mathrm{?1}}$. Synthetic spectra indicate the band origins of ν₈ and ν₉ to be close to 977.8 and 439.0 cm^?1, respectively. Estimates of Coriolis coupling constants obtained from synthetic spectra are $\text{ζ}{}_{58}{}^{\mathrm{a}}\text{= + 0.33 (5)}$, $\text{ζ}{}_{68}{}^{\mathrm{a}}\text{= + 0.714 (20)}$, $\text{ζ}{}_{59}{}^{\mathrm{a}}\text{= ? 0.774 (20)}$, and $\text{ζ}{}_{69}{}^{\mathrm{a}}\text{= ? 0.30 (2)}$. Approximate ratios of unperturbed vibrational transition moments obtained from spectral simulations are $\text{M}{}_8{}^0\text{:±iM}{}_5{}^0\text{:±iM}{}_6{}^0\text{:M}{}_9{}^0\text{≈ +2:?9:+10:+0.5}$.     

Surface cyclotron resonance in Si under uniaxial stress

The cyclotron resonance of inversion-layer electrons on (100)p-type Si is found to depend sensitively on an externally applied compressive stress. At low temperatures (T ? 10 K) we observe a considerable increase of the cyclotron mass m¹_c with stress S along the [001] direction. The effect is most strongly observed at low electron densities n_s. For $\text{S～1.5 × 10}{}^9\text{dyne}\text{cm}{}^2$ and n_s～2 × 10¹¹cm^-2 we obtain $\text{m}{}^1{}_{\mathrm{c}}\text{～0.4 m}{}_0$ instead of the expected 0.2m₀. Along with this change of $\text{m}{}^1{}_{\mathrm{c}}$ a strong narrowing of the resonance is noted. Raising the temperature gives an additional n_s- dependent increase of $\text{m}{}^1{}_{\mathrm{c}}$.     

Polarization spectroscopy of the E0g+-B0u+ band system of Br2

The E-B (0_g⁺-0_u⁺) band system of Br₂ has been investigated at Doppler-limited resolution using polarization labeling spectroscopy. Merged E state data for the three naturally occurring isotopes in the range v_E = 0–16, expressed in terms of the constants for ⁷⁹Br₂, are (in cm^?1) Y_0,0 = 49 777.962(54), Y_1,0 = 150.834(22), Y_2,0 = ?0.4182(28), Y_3,0 = 6.6(11) × 10^?4, Y_0,1 = 4.1876(28) × 10^?2, Y_1,1 = ?1.607(16) × 10^?4, and Y_0,2 = 1.39(39) × 10^?8. The bond distance is $\text{r}{}_{\mathrm{<mtext>e</mtext>}}\text{= 3.194}\text{A}\text{?}$, and the diabatic dissociation energy to $\text{Br}{}^{\mathrm{+}}\text{(}{}^3\text{P}{}_2\text{) +}\text{Br}{}^{\mathrm{?}}\text{(}{}^1\text{S}{}_0\text{)}\text{is 34 700 cm}{}^{\mathrm{?1}}$.     

Dielectronic satellite spectra from dense laser-produced plasmas

The Lyman-α and adjacent dielectronic satellite lines have been observed in the spectra from laser-irradiated solid targets. In a carbon plasma from a planar target, the relative intensity of the $\text{2p}{}^2{}^3\text{P?1s2p}{}^3\text{P}$ satellite line of C(V) increases as a function of electron density in the range 8 × 10¹⁹ to 2 × 10²⁰ cm^?3. As analysis of a series of imploded microballoon experiments indicates that the $\text{2p}{}^2{}^3\text{P?1s2p}{}^3\text{P}$ and $\text{2s2p}{}^3\text{P?1s2s}{}^3\text{S}$ satellite radiation of Si(XIII) increases for electron densities 1 × 10²²?2 × 10²³ cm^?3. The satellite intensity distributions have been numerically simulated using a rate equation model. It is shown that the carbon and silicon satellite data may be interpreted in a consistent manner, and the extension to higher atomic numbers Z and higher electron densities is considered.     

Chemical diffusion in nonstoichiometric chromium sulfide,Cr2+yS3

Using the re-equilibration kinetic method the chemical diffusion coefficient in nonstoichiometric chromium sesquisulfide, Cr_2+yS₃, has been determined as a function of temperature (1073–1373 K) and sulphur vapour pressure (10?10⁴ Pa). It has been found that this coefficient is independent of sulphur pressure and can be described by the following empirical equation: $\text{D}\text{?}\text{Cr}{}_{\mathrm{2+y}}\text{S}{}_3\text{=50.86}\text{exp(-39070 cal/mole/}\text{RT)}\text{(cm}{}^2\text{s}{}^{\mathrm{?1)}}$. It has been shown that the mobility of the point defects inCr_2+yS₃ is independent of their concentration and that the self-diffusion coefficient of chromium in this sulfide has the following function of temperature and sulphur pressure: . (cm²s^?1).     

The rotational spectrum of the X 2Σ+ state of the SrF radical using laser microwave optical double resonance

The pure rotational spectrum of the $\text{X}{}^2\text{Σ}{}^{\mathrm{+}}$ state of the gaseous SrF radical has been measured using microwave optical double resonance (MODR) techniques. The analysis fully confirms the recent dye laser excitation spectrum and rotational assignment of the $\text{B}{}^2\text{Σ}{}^{\mathrm{+}}\text{-X}{}^2\text{Σ}{}^{\mathrm{+}}$ system. Transitions were measured in both the v″ = 0 and v″ = 1 states to give values of B_e″ = 0.250533 cm^?1, α_e″ = 1.546 × 10^?3 cm^?1 and γ″ (spin-rotation) = 2.49 × 10^?3 cm^?1. General qualitative features of MODR in ²Σ⁺ states are treated and suggested improvements for obtaining experimental hyperfine constants are discussed. The more precise ground state constants are merged with the B-X optical analysis to obtain a more accurate set of constants for both states.     

Oпpeдeлehиe othocиteлъhoгo pacпoлoжehия heкomБиhиpyющиx элeкtpohhъix coctoяhий дbyxatomhъix moлeкyл. Ochobhoe элeкtpohhoe coctoяhиe ZrO

A method is proposed for determining the energy difference of noncombining electronic states and the type of ground electronic state of molecules, based on studying the temperature dependence of integral absorption coefficients of molecular bands in a reflected shock wave plasma over a wide range of temperatures. The method is used to determine the relative position of singlet and triplet ZrO electronic states. As the result of measurements of integral absorption coefficients of 0, 0 bands of ${}^1\text{Σ}{}^{\mathrm{+}}\text{-}{}^1\text{Σ}{}^{\mathrm{+}}$ and ${}^3\text{Δ -}{}^3\text{Δ}$ systems in the temperature interval 3370–5200°K, it is shown that ¹Σ⁺ state is the ZrO ground state, whilst T₀(a³Δ) = 1700 ± 250 cm^-1.     

Subject index for volume 88

The emission and excitation spectra of the aromatic thioketone xanthione have been measured in Shpolskii matrices at 15 K. Under these conditions a sharp and rich vibrational structure is observed in the lowest triplet and the first and second excited singlet states. The phosphorescence excitation spectrum places the origin of the T₁ ← S₀ transition at 15 143 cm^?1, while that of the $\text{S}{}_1\text{(n, π}{}^1\text{) ← S}{}_0$ absorption is tentatively assigned to the band at 16 093 cm^?1. The phosphorescence spectrum, which shows only a weak CS stretch vibrational band, is dominated by ring vibrations. In accordance with the previous analysis of ODMR measurements, it is suggested that T₁ and T₂ states are energetically very close, thereby resulting in a lowest triplet state of heavily mixed n, $\text{π}{}^1\text{-π}$, $\text{π}{}^1$ character. No mirror-image relationship is found between the relatively strong S₂ → S₀ fluorescence and the excitation spectrum of the $\text{S}{}_2\text{(π, π}{}^1\text{) ← S}{}_0$ transition. The latter is dominated by a long, pronounced 336-cm^?1 progression.     

Pressure spectroscopy of impurity states in GaSb(Se)

Galvanomagnetic effects and Shubnikov-de Haas oscillations are studied in monocrystalline GaSb(Se) samples ($\text{n}{}_{\mathrm{<mtext>se</mtext>}}\text{= 10}{}^{17}\text{?10}{}^{18}\text{cm}{}^{\mathrm{?3}}$) in magnetic fields up to 50 kOe at temperatures 0,07 K ?T?300 K under pressures p?12 kbar. Pressure spectroscopy has been used to determine the density of states in impurity bands and to investigate the anomalies of the transport properties of Γ-electrons near mobility edge ε_c on both metal and insulator sides.     

Electronic conductivity of AgI using D.C. polarization and charge transfer techniques

A Study of electronic conductivity using the d.c. polarization technique has been carried out in α and β-AgI which shows the former is a hole and the latter an electron conductor. Activation energies of undoped and Cu-doped single crystals and polycrystalline β-AgI were found to be 0.46 eV, 0.34 eV and 0.44 eV respectively and can be related to electron trap depths. The electron transference number ($\text{σ}{}_{\mathrm{\theta }}\text{σ}{}_{\mathrm{t}}$) for polycrystalline β-AgI was found to be 0.008 at 306 K. The activation energy for hole conduction in α-AgI was determined to be 0.97 eV in agreement with previous XPS studies.Transient measurements have also been conducted using the charge transfer technique in double cells of polycrystalline β-AgI. The carrier concentration C_θ and electron mobility μ_θ, have thus been estimated to be 1.8 × $\text{10}{}^{15}\text{cm}{}^3$ and 5.14 × 10^?5$\text{cm}{}^2\text{V}$?sec. respectively at 306 K, while the double layer capacitance was 0.496 $\text{μF}\text{cm}{}^2$.     

The spectroscopic study of excitation and ionization in the collision of two metastable atoms

Collisions between two excited atoms leading to an increase in the excitation energy of the particles have been under investigation. All measurements were made in the afterglow of gas-discharge plasma. The cross sections of the following reactions have been determined: $\text{Hg}\text{(6}{}^3\text{P}{}_{012}\text{) +}\text{Hg}\text{(6}{}^3\text{P}{}_{012}\text{) →}\text{Hg}{}^7\text{+}\text{Hg}\text{(6}{}^1\text{S}{}_0\text{),}\text{He}{}_{\mathrm{m}}\text{(2}{}^{\mathrm{1,3}}\text{S}\text{) +}\text{Xe}{}_{\mathrm{m}}\text{(}{}^3\text{P}{}_{\mathrm{0,2}}\text{) → (}\text{Xe}{}^{\mathrm{+}}\text{)}{}^1\text{+}\text{He}{}_0\text{+}\text{e}$. The cross section of the first reaction for different transitions lies in the region (2?35) × 10^?15 cm² and the cross section of the second, in (0.2?2.4) × 10^?16 cm². Possible systematic errors and the role of cascade transitions are discussed. Cross sections of the Penning reaction He_m + Xe₀ → He₀ + Xe⁺ + e have also been measured. The result is σ (2³S) = (1.4 ± 0.2) × 10^?15 cm², σ (2¹S) = (1.2 ± 0.3) × 10^?15 cm².     

Characteristics of target interaction with high power UV laser radiation

Thermal conduction, mass ablation rate, pressure and preheat were investigated in the interaction of a frequency tripled Nd: glass laser of power 0.-0.2 TW with flat targets. In the range $\text{10}{}^{13}\text{?10}{}^{15}\text{W}\text{cm}{}^2$ for 400 ps pulses we find: (a) thermal conduction may be described by a flux limiter f = 0.04 ± 0.01; (b) the mass abaltion rate depends on the incident laser irradiance as $\text{m}\text{?}\text{= 4.4 × 10}{}^5\text{(I/10}{}^{14}\text{)}{}^{0.53}\text{g cm}{}^{-2}\text{s}{}^{-1}$; (c) the pressure near the ablation surface increases approximately linearly with irradiance and is about 70 Mbar at 10¹⁵ W/cm², and (d) preheat as evidenced by K_α X-ray line emission is significantly lower than in λ = 1.05 μm irradiation.     

Microwave optical double resonance and continuous wave dye laser excitation spectroscopy of NO2: Rotational assignment of the K = 0−4 subbands of the 593 nm band

A rotational assignment of approximately 80 lines with K_a′ = 0, 1, 2, 3, and 4 has been made of the 593 nm ${}^2\text{A}{}_1\text{→}{}^2\text{B}{}_2$ band of NO₂ using cw dye laser excitation and microwave optical double-resonance spectroscopy. Rotational constants for the ²B₂ state were obtained as A = 8.52 cm^?1, B = 0.458 cm^?1, and C = 0.388 cm^?1. Spin splittings for the K_a′ = 0 excited state levels fit a simple symmetric top formula and give $\text{(?}{}_{\mathrm{bb}}\text{+ ?}{}_{\mathrm{cc}}\text{)}\text{2}\text{= ?0.0483}\text{cm}{}^{\mathrm{?1}}$. Spin splittings for K_a′ = 1 (N′ even) are irregular and are shown to change sign between N′ = 6 and 8. Assuming that the large inertial defect of 4.66 amu Ų arises solely from A, a structure for the ²B₂ state is obtained which gives $\text{r}\text{(NO) = 1.35}\text{A}\text{?}$ and an ONO angle of 105°. Alternatively, weighting the three rotational constants equally gives $\text{r = 1.29}\text{A}\text{?}$ and θ = 118°.