Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by x-ray diffraction (I)

An analysis of the atomic radial distribution function of Al_0.20As_0.30Te_0.30, Al_0.10As_0.40Te_0.50 and Al_0.10As_0.20Te_0.70 amorphous alloys obtained from quenching of the molten mixture of the elements was performed. A structure in which all the Al atoms are tetrahedrally bonded to the other types of atoms in the material, would satisfy the requirements of the experimental curve. Tetrahedral groups might be linked to each other by As and Te atoms, or directly through a Te or As atom belonging to more than one tetrahedra.     

Low-temperature specific heat of amorphous and crystalline Te0.81Ge0.15As0.04

We have measured the specific heats of amorphous and crystalline specimens of Te_0.81Ge_0.15As_0.04 between 0.2 and 20 K, and of crystalline Te_0.93As_0.07 between 1 and 20 K. Amorphous Te_0.81Ge_0.15As_0.04 shows a low-temperature linear specific heat anomaly whose magnitude, 0.027 mJ/mol-K², is similar to that of other amorphous insulators. Crystalline Te_0.81Ge_0.15As_0.04 exists as a two-phase material comprised of GeTe and As-doped Te. The specific heat of this material is analyzed in terms of a weighted average of the properties of its two constituents.     

Composition dependence of photoconductivity of Al20AsxTe80−x glasses

The time dependent photocurrent of Al₂₀As_xTe_80−x glasses has been studied at low temperatures. It is found that the photocurrent of all the Al₂₀As_xTe_80−x samples studied does not decrease appreciably during illumination, which is consistent with the behavior of other narrow band gap amorphous chalcogenides. Further, the photosensitivity is found to be maximized for the composition x=25, which can be associated with rigidity percolation.     

Electron diffraction RDF analysis of amorphous As2Se3,AAs2Se2Te,As2SeTe2 and As2Te3 films

The local order in amorphous films of As₂Se₃, As₂Se₂Te, As₂SeTe₂, and As₂Te₃ has been examined by scanning electron diffraction with direct recording of the intensity of the elastically scattered electrons. The radial distribution functions indicate that there is a systematic increase in mean nearest neighbor distance as the Te concentration is increased, butthe mean coordination number increases slightly around 2.4. Pair function calculation of models shows that the 3-aand 2-fold coordinations of arsenic and chalcogens are retained in these glasses and the interatomic distances are close to those predicted from the Pauling covalent atomic radii of the constituent atomic species. The short range order appears to be similar in amorphous and crystalline As₂Se₃, but different in the case of As₂Te₃ as found by previous workers on bulk materials.     

The neutron diffraction study of liquid GeTe and As2Te3

The radial distribution analyses for GeTe and As₂Te₃ are made at temperatures above the melting point in the range of momentum transfer between 0.7 and 10.0 Å^?1 by the neutron diffraction technique. Furthermore, the local order in amorphous GeTe is determined by analyzing the intensity data of the electron diffraction of its thin film. The result for the amorphous film indicates that the local distribution of atoms in amorphous GeTe is not characteristic of the structure of its crystalline state. The shape of the peaks of the intensity curve for liquid GeTe differs from that for the amorphous and crystalline states. However, the short bond length and the small coordination number determined from liquid RDF suggest that the covalent-like bonding between nearest-neighbor atoms remains unbroken when melting. The general form of the structure factor for liquid As₂Te₃ is similar to that for the amorphous material reported previously. The position of the first peak of RDF in the liquid state is observed to be shifted to a shorter distance than the average of nearest-neighbor atoms in crystalline As₂Te₃. The structure of GeTe differs considerably between the crystalline, amorphous and liquid states, whereas the local order in the liquid As₂Te₃ is similar to that in the amorphous state but not in the crystalline state.     

Phase transitions and electrical properties of As2Te3

This study identifies and characterizes the phase transitions induced thermally in bulk amorphous and crystalline As₂Te₃. In addition, it examines the nature and the electrical properties of the various As₂Te₃ phases, and attempts to correlate the memory electrical switching exhibited by these materials with their phase transitions.     

Crystallization and local order of bulk AsxTe1−x glasses

The crystallization and the local order of the bulk As_xTe_1?x (0.2 ? × ? 0.8) glasses have been investigated by DSC, X-ray and Mössbauer methods. During the crystallization a metastable phase has been observed between 0.35 ? × ? 0.5 and it was identified as fcc AsTe. The local surrounding of these As_xTe_1?x glasses characterized by the ¹²⁵Te Mössbauer measurements were compared with those of the stable monoclinic As₂Te₃, hexagonal Te and metastable fcc AsTe.     

Some features relevant to switching processes in the amorphous semiconductor Si12Ge10As30Te48

The current-voltage characteristics of the amorphous semiconductor glass Si₁₂Ge₁₀As₃₀Te₄₈ have been measured under various experimenal conditions. The experimental results show that the resistance of the device in the ‘off’ state and the threshold voltage for the onset of switching action decrease with increasing the maximum current (I_p) passing through the device in the ‘on’ state, and that the threshold input power to set in the switching action is practically independent of temperature. The stability and the consistency of the device depend on the magnitude of I_p. When I_p is increased to a certain value the glass within and near the current filament between the electrodes become softened, and when it reaches a critical value the device is changed from its ‘switching-on’ state to a ‘memory’ state. All the results are in good agreement with the model that the filament formed to cause switching consists of a mixture of crystalline domains and amorphous domains with phase separations.     

Hydrothermal synthesis of Bi2Te3 nanowires through the solid-state interdiffusion of Bi and Te atoms on the surface of Te nanowires

Polycrystalline Bi₂Te₃ nanowires were prepared by a hydrothermal method that involved inducing the nucleation of Bi atoms reduced from BiCl₃ on the surface of Te nanowires, which served as sacrificial templates. A Bi–Te alloy is formed by the interdiffusion of Bi and Te atoms at the boundary between the two metals. The Bi₂Te₃ nanowires synthesized in this study had a length of 3–5 μm, which is the same length as that of the Te nanowires, and a diameter of 300–500 nm, which is greater than that of the Te nanowires. The experimental results indicated that volume expansion of the Bi₂Te₃ nanowires was a result of the interdiffusion of Bi and Te atoms when Bi was alloyed on the surface of the Te nanowires. The morphologies of Bi₂Te₃ are strongly dependent on the reaction conditions such as the temperature and the type and concentration of the reducing agent. The morphologies, crystalline structure and physical properties of the product were analyzed by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED) and X-ray photoelectron spectroscopy (XPS).     

Structural change of liquid Si15Te85 and Si20Te80 with temperature: Ab initio molecular dynamics simulations

Using ab initio molecular dynamics simulations, the structural and electronic properties of liquid Si₁₅Te₈₅ and Si₂₀Te₈₀ at two temperatures were studied respectively. Compared with available experimental data, the calculated structure factors are acceptable. From symmetry arguments, the calculated partial bond-angle distribution functions suggest that with increasing temperature the extensive tetrahedral network structures persist longer in liquid Si₂₀Te₈₀ than those do in liquid Si₁₅Te₈₅. Our results indicate that the local tetrahedral structure around Si atoms and the Peierls-like distorted local atomic structure around Te atoms both play important roles in the structural change of liquid Si₂₀Te₈₀ and Si₁₅Te₈₅, which also suggest that the mechanisms of the structural change upon cooling in liquid Si₂₀Te₈₀ and Si₁₅Te₈₅ are of no essential difference. The results of DOS and LDOS indicate that the variation of the dip in DOS at E_F mainly results from the change of Te p orbitals.     

Study on crystallization kinetics of Al65Cu20Ti15 amorphous alloy

The crystallization behavior and thermal stability of amorphous phases of Al₆₅Cu₂₀Ti₁₅ alloy obtained by mechanical alloying were investigated by using in-situ X-ray diffraction and differential scanning calorimetry (DSC) under non isothermal and isothermal conditions. The result of a Kissinger analysis shows that the activation energy for crystallization is 1131 kJ/mol. The higher stability against crystallization of Al₆₅Cu₂₀Ti₁₅ amorphous alloy is attributed to the stronger interaction of atoms in the Al-Cu-Ti system and formed of complicated compound like Al₅CuTi₂ and Al₄Cu₉ as primary phases. The isothermal crystallization was modeled by using the Johnson-Mehl-Avrami (JMA) equation. The Avarami exponents suggest that the isothermal crystallization is governed by a three-dimensional diffusion-controlled growth.     

Structural transformation on Se0.8Te0.2 chalcogenide glass

Using X-ray diffraction and differential scanning calorimetry (DSC), the structure and the crystallization mechanism of Se_0.8Te_0.2 chalcogenide glass has been studied. The structure of the crystalline phase has been refined using the Rietveld technique. The crystal structure is hexagonal with lattice parameter a = 0.443 nm and c = 0.511 nm. The average crystallite size obtained using Scherrer equation is equal 16.2 nm, so it lies in the nano-range. From the radial distribution function, the short range order (SRO) of the amorphous phase has been discussed. The structure unit of the SRO is regular tetrahedron with (r₂/r₁) = 1.61. The Se_0.8Te_0.2 glassy sample obeys the chemical order network model, CONM. Some amorphous structural parameters have been deduced. The crystallization mechanism of the amorphous phase is one-dimensional growth. The calculated value of the glass transition activation energy (E_g) and the crystallization activation energy (E_c) are 159.8 ± 0.3 and 104.3 ± 0.51 kJ/mol, respectively.     

AC conductivity of (As2Te3)95Ge5

The elctrical conductivity of amorphous chalcogenide (As₂Te₃)₉₅Ge₅ is investigated at variable frequency, from 1 kHz up to 35 GHz, and a variable temperature, from 77 to 300 K. The low-temperature conductivity is constant with temperature at a fixed frequency. At a fixed temperature, it obeys a ω^0.8 law only at low frequencies. The results are analysed with respect to the polaron problem, but also with a simple model of several dilute localized levels having a wide energy distribution in the forbidden band.     

Crystallization process on amorphous GeTeSb samples near to eutectic point Ge15Te85

One of most important properties of some tellurium-based chalcogenide glasses is the optical and electrical switching between two states: the glass and the crystalline state. The understanding in these systems of the glass to crystal transition and its transformation kinetics is essential for their application in non-volatile memories. GeTeSb and GeTe amorphous samples of compositions close to the eutectic point Ge₁₅Te₈₅ were obtained by rapid solidification from the liquid state employing melt spinning technique. The glass forming ability of this system, for this cooling technique, is restricted to a small composition range nearby the binary eutectic. The crystallization kinetics of the samples was studied by means of differential scanning calorimetry (DSC) under both isothermal and continuous heating regimes. The quenched samples and the crystallization products have been characterized by X-ray diffraction with Cu(Kα) radiation. The crystallization temperature, activation energy, crystallization enthalpy and the dependence of these properties on concentration are reported. The crystallization study of Ge₁₅Te₈₅ glasses shows: a primary crystallization of Te superimposed with a secondary crystallization of GeTe. The addition of Sb (5 at.%) to the eutectic point Ge₁₅Te₈₅ modifies this behavior: the crystallization of Ge₁₃Sb₅Te₈₂ glasses consists on the crystallization of Te and Ge₂Sb₂Te_5. The crystallization of the ternary glasses was modeled.     

Crystallization of Al23Te77 glasses

The crystallization of Al₂₃Te₇₇ glasses has been studied by DSC techniques. Two peaks occur, showing an earlier excess Te crystallization and a later one of the remaining amorphous matrix. Isothermal determination of the kinetics is only possible for the second process, so a model for non-isothermic crystallization is developed on the basis of the Avrami theory, which is in agreement with isothermic results. The shift of the crystallization peaks with the scan rate allows knowledge of the activation energy for both processes. Those are found to be 1.9 and 2.8 eV respectively. Fitting of the experimental data with this model also indicates a diffusion mechanism for the Te crystallization and a homogeneous nucleation and growth process for the second stage. Re-scanning of the sample after the completion of the first peak shows a second T_g commonly associated with phase separation. Results are discussed in terms of the studies of structure recently reported.     

Crystallization kinetics of amorphous Se60S20Te20

The temperature and the time dependence of the electrical conductivity (6) of a-Se₆₀S₂₀Te₂₀ are investigated. Conductivity anomalies are observed during the crystallization growth from both the amorphous solid and supercooled liquid phases. The changes of 6 during different isothermal annealing of a-Se₆₀S₂₀Te₂₀ samples with time are used to determine the ratio transformed from amorphous to crystalline. A value of 0.97±0.16 eV has been obtained for the activation energy of the crystal growth in the temperature range of 120–170°C.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

Influence of Gd and Fe on crystallization of Al87Y5Ni8 amorphous alloy

Crystallization of amorphous Al-based alloys (Al-Y-Gd-Ni-Fe) was investigated by applying differential scanning calorimetry (DSC), X-ray diffraction (XRD) and high resolution electron microscopy (HREM). It was shown that the crystallization in the examined alloys proceeds in three stages (DSC maxima). The two first stages are attributed to formation of solid solution of fcc Al(RE) nanograins in amorphous matrix. In the third stage the precipitation of ternary compound Al₁₉Ni₅RE₃ of the orthorhombic Al₁₉Ni₅Gd₃-type structure was observed. A partial substitution of Ni by Fe causes a change of stoichiometry and crystal structure of the ternary compounds: Al₈TM₄RE (TM = Fe, Ni; RE = Y, Gd) of the tetragonal ThMn₁₂ (Al₈Mn₄Ce)-type structure. A partial replacing of Y atoms by Gd in the Al₈₇Y₅Ni₈ based alloy shifts the Al(RE) nanocrystallization to lower temperatures. In contrast to this a partial replacing of Ni by Fe shifts the nanocrystallization to higher temperatures.     

An investigation of the kinetic transformation mechanism of Ge12.5Te87.5 chalcogenide glass under non-isothermal regime

Differential scanning calorimetry (DSC) technique was used to study the kinetics of amorphous to crystalline transformation in Ge_12.5Te_87.5 chalcogenide glass. The kinetic parameters of glassy Ge_12.5Te_87.5 under non-isothermal conditions are analyzed by the model-free and model-fitting approaches from a series of experiments at different constant heating rates (5-50 K/min). The effective activation energy of crystallization was determined by analyzing the data using the isoconversional methods of Kissinger-Akahira-Sunose (KAS), Tang, Starink, Flynn-Wall-Ozawa (FWO) and Vyazovkin. The analysis of the present data shows that the effective activation energy of crystallization is constant throughout the entire interval of conversions and hence with temperature. The transformation mechanism examined using the local Avrami exponents indicates that one mechanism (three-dimensional growth) is responsible for the transformation process for all heating rates used. The reaction model that may describe the transformation process of the Ge_12.5Te_87.5 chalcogenide glass is the Avrami-Erofeev model (g(α) = [− ln(1 − α)]^1/n) with n = 3 for all heating range at the whole range of crystallized fraction (α = 0.05-0.95). A good agreement between the experimental and the reconstructed (α-T) curves has been achieved. The transformation from amorphous to crystalline phase in Ge_12.5Te_87.5 chalcogenide glass demonstrates a single-step mechanism.     

Short-range and medium-range order in rapidly quenched Al50Mg50 alloy

The rapid quenching processes of a larger-scale Al₅₀Mg₅₀ alloy system consisting of 100,000 atoms have been simulated by using molecular dynamics method. The formation and structure of short-range order (SRO) and medium-range order (MRO) in the rapidly quenched Al₅₀Mg₅₀ alloy are investigated by means of several structural analysis methods. It is found that the massive icosahedra in the Al₅₀Mg₅₀ supercooled liquid prevent it from crystallizing and play a critical role in the formation of metallic glass. The SRO in Al₅₀Mg₅₀ metallic glass cannot be modeled by a uniquely prescribed stereo-chemical structure or five Bernal polyhedra, but various types of basic clusters in which the icosahedron is dominant. The MRO is characterized by some certain types of extended icosahedral clusters combined by intercross-sharing atoms in the form of chains or rings, which is different from the FCC and icosahedral building schemes for the MROs in metallic glasses with significant chemical SRO. The size distributions of these MRO clusters exhibit a magic number sequence of 19, 23, 25, 27, 29, 31, 33, 35, 37, 41….